KR20090127035A - 쇼트키 배리어 다이오드 및 그 제조 방법 - Google Patents

쇼트키 배리어 다이오드 및 그 제조 방법 Download PDF

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Publication number
KR20090127035A
KR20090127035A KR1020087027687A KR20087027687A KR20090127035A KR 20090127035 A KR20090127035 A KR 20090127035A KR 1020087027687 A KR1020087027687 A KR 1020087027687A KR 20087027687 A KR20087027687 A KR 20087027687A KR 20090127035 A KR20090127035 A KR 20090127035A
Authority
KR
South Korea
Prior art keywords
schottky barrier
barrier diode
schottky
manufacturing
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020087027687A
Other languages
English (en)
Korean (ko)
Inventor
도미히토 미야자키
마코토 기야마
Original Assignee
스미토모덴키고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스미토모덴키고교가부시키가이샤 filed Critical 스미토모덴키고교가부시키가이샤
Publication of KR20090127035A publication Critical patent/KR20090127035A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Electrodes Of Semiconductors (AREA)
KR1020087027687A 2007-03-26 2008-03-19 쇼트키 배리어 다이오드 및 그 제조 방법 Withdrawn KR20090127035A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007078275 2007-03-26
JPJP-P-2007-078275 2007-03-26

Publications (1)

Publication Number Publication Date
KR20090127035A true KR20090127035A (ko) 2009-12-09

Family

ID=39788454

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087027687A Withdrawn KR20090127035A (ko) 2007-03-26 2008-03-19 쇼트키 배리어 다이오드 및 그 제조 방법

Country Status (8)

Country Link
US (1) US20100224952A1 (enExample)
EP (1) EP2043157A4 (enExample)
JP (2) JP5644105B2 (enExample)
KR (1) KR20090127035A (enExample)
CN (1) CN101542736A (enExample)
CA (1) CA2652948A1 (enExample)
TW (1) TW200845401A (enExample)
WO (1) WO2008117718A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210751A (ja) * 2010-03-26 2011-10-20 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子の製造方法、および電子装置
US8772144B2 (en) * 2011-11-11 2014-07-08 Alpha And Omega Semiconductor Incorporated Vertical gallium nitride Schottky diode
CN103208534A (zh) * 2013-04-03 2013-07-17 上海安微电子有限公司 一种制程简化的肖特基器件及制造方法
CN103199120A (zh) * 2013-04-23 2013-07-10 上海安微电子有限公司 一种台平面肖特基势垒二极管及其制备方法
WO2015006712A2 (en) * 2013-07-11 2015-01-15 Sixpoint Materials, Inc. An electronic device using group iii nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
JP6260553B2 (ja) * 2015-02-27 2018-01-17 豊田合成株式会社 半導体装置およびその製造方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523223A (en) * 1967-11-01 1970-08-04 Texas Instruments Inc Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing
JPS4813273B1 (enExample) * 1968-10-18 1973-04-26
JPS4822390B1 (enExample) * 1969-03-18 1973-07-05
US3562606A (en) * 1969-08-13 1971-02-09 Varian Associates Subsurface gallium arsenide schottky-type diode and method of fabricating same
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
JPS5158866A (ja) * 1974-11-18 1976-05-22 Matsushita Electronics Corp Shotsutokiishohekigatahandotaisochi oyobi sonoseizohoho
JPS5712565A (en) * 1980-06-26 1982-01-22 Nec Corp Schottky barrier element
JPS5982774A (ja) * 1982-11-02 1984-05-12 Nec Corp 半導体装置
JPS59232467A (ja) * 1983-06-16 1984-12-27 Toshiba Corp ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド
GB8413170D0 (en) * 1984-05-23 1984-06-27 British Telecomm Production of semiconductor devices
JPH08139341A (ja) * 1994-11-11 1996-05-31 Murata Mfg Co Ltd ショットキ−バリアダイオ−ド
US5895260A (en) * 1996-03-29 1999-04-20 Motorola, Inc. Method of fabricating semiconductor devices and the devices
DE19804580C2 (de) * 1998-02-05 2002-03-14 Infineon Technologies Ag Leistungsdiode in Halbleitermaterial
US6362495B1 (en) * 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
KR101017657B1 (ko) * 2002-04-30 2011-02-25 크리 인코포레이티드 고 전압 스위칭 디바이스 및 이의 제조 방법
US7253015B2 (en) * 2004-02-17 2007-08-07 Velox Semiconductor Corporation Low doped layer for nitride-based semiconductor device
WO2005093796A1 (ja) * 2004-03-26 2005-10-06 The Kansai Electric Power Co., Inc. バイポーラ型半導体装置およびその製造方法
TWI375994B (en) * 2004-09-01 2012-11-01 Sumitomo Electric Industries Epitaxial substrate and semiconductor element
JP2007036052A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 半導体整流素子
US8026568B2 (en) * 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance

Also Published As

Publication number Publication date
TW200845401A (en) 2008-11-16
EP2043157A4 (en) 2011-11-16
WO2008117718A1 (ja) 2008-10-02
CA2652948A1 (en) 2008-10-02
EP2043157A1 (en) 2009-04-01
JP5644105B2 (ja) 2014-12-24
CN101542736A (zh) 2009-09-23
JP2014241436A (ja) 2014-12-25
US20100224952A1 (en) 2010-09-09
JPWO2008117718A1 (ja) 2010-07-15

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