TW200845401A - Schottky barrier diode and method for manufacturing the same - Google Patents
Schottky barrier diode and method for manufacturing the same Download PDFInfo
- Publication number
- TW200845401A TW200845401A TW097110859A TW97110859A TW200845401A TW 200845401 A TW200845401 A TW 200845401A TW 097110859 A TW097110859 A TW 097110859A TW 97110859 A TW97110859 A TW 97110859A TW 200845401 A TW200845401 A TW 200845401A
- Authority
- TW
- Taiwan
- Prior art keywords
- barrier diode
- schottky barrier
- schottky
- electrode
- mesa
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 60
- 238000005530 etching Methods 0.000 claims description 15
- 238000001020 plasma etching Methods 0.000 claims description 15
- 238000001039 wet etching Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 3
- 229910001347 Stellite Inorganic materials 0.000 claims 1
- AHICWQREWHDHHF-UHFFFAOYSA-N chromium;cobalt;iron;manganese;methane;molybdenum;nickel;silicon;tungsten Chemical compound C.[Si].[Cr].[Mn].[Fe].[Co].[Ni].[Mo].[W] AHICWQREWHDHHF-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 210000004508 polar body Anatomy 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/043—Manufacture or treatment of planar diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Landscapes
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007078275 | 2007-03-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200845401A true TW200845401A (en) | 2008-11-16 |
Family
ID=39788454
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097110859A TW200845401A (en) | 2007-03-26 | 2008-03-26 | Schottky barrier diode and method for manufacturing the same |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20100224952A1 (enExample) |
| EP (1) | EP2043157A4 (enExample) |
| JP (2) | JP5644105B2 (enExample) |
| KR (1) | KR20090127035A (enExample) |
| CN (1) | CN101542736A (enExample) |
| CA (1) | CA2652948A1 (enExample) |
| TW (1) | TW200845401A (enExample) |
| WO (1) | WO2008117718A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011210751A (ja) * | 2010-03-26 | 2011-10-20 | Nec Corp | Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子の製造方法、および電子装置 |
| US8772144B2 (en) * | 2011-11-11 | 2014-07-08 | Alpha And Omega Semiconductor Incorporated | Vertical gallium nitride Schottky diode |
| CN103208534A (zh) * | 2013-04-03 | 2013-07-17 | 上海安微电子有限公司 | 一种制程简化的肖特基器件及制造方法 |
| CN103199120A (zh) * | 2013-04-23 | 2013-07-10 | 上海安微电子有限公司 | 一种台平面肖特基势垒二极管及其制备方法 |
| JP6516738B2 (ja) * | 2013-07-11 | 2019-05-22 | シックスポイント マテリアルズ， インコーポレイテッド | Ｉｉｉ族窒化物半導体を用いた電子デバイスおよびその製造方法、および該電子デバイスを製作するためのエピタキシャル多層ウエハ |
| JP6260553B2 (ja) * | 2015-02-27 | 2018-01-17 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3523223A (en) * | 1967-11-01 | 1970-08-04 | Texas Instruments Inc | Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing |
| JPS4813273B1 (enExample) * | 1968-10-18 | 1973-04-26 | ||
| JPS4822390B1 (enExample) * | 1969-03-18 | 1973-07-05 | ||
| US3562606A (en) * | 1969-08-13 | 1971-02-09 | Varian Associates | Subsurface gallium arsenide schottky-type diode and method of fabricating same |
| NL167277C (nl) * | 1970-08-29 | 1981-11-16 | Philips Nv | Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting. |
| JPS5158866A (ja) * | 1974-11-18 | 1976-05-22 | Matsushita Electronics Corp | Shotsutokiishohekigatahandotaisochi oyobi sonoseizohoho |
| JPS5712565A (en) * | 1980-06-26 | 1982-01-22 | Nec Corp | Schottky barrier element |
| JPS5982774A (ja) * | 1982-11-02 | 1984-05-12 | Nec Corp | 半導体装置 |
| JPS59232467A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド |
| GB8413170D0 (en) * | 1984-05-23 | 1984-06-27 | British Telecomm | Production of semiconductor devices |
| JPH08139341A (ja) * | 1994-11-11 | 1996-05-31 | Murata Mfg Co Ltd | ショットキ−バリアダイオ−ド |
| US5895260A (en) * | 1996-03-29 | 1999-04-20 | Motorola, Inc. | Method of fabricating semiconductor devices and the devices |
| DE19804580C2 (de) * | 1998-02-05 | 2002-03-14 | Infineon Technologies Ag | Leistungsdiode in Halbleitermaterial |
| US6362495B1 (en) * | 1998-03-05 | 2002-03-26 | Purdue Research Foundation | Dual-metal-trench silicon carbide Schottky pinch rectifier |
| KR101017657B1 (ko) * | 2002-04-30 | 2011-02-25 | 크리 인코포레이티드 | 고 전압 스위칭 디바이스 및 이의 제조 방법 |
| US7253015B2 (en) * | 2004-02-17 | 2007-08-07 | Velox Semiconductor Corporation | Low doped layer for nitride-based semiconductor device |
| EP1739726A4 (en) * | 2004-03-26 | 2009-08-26 | Kansai Electric Power Co | BIPOLAR SEMICONDUCTOR ELEMENT AND PROCESS FOR ITS MANUFACTURE |
| TWI375994B (en) * | 2004-09-01 | 2012-11-01 | Sumitomo Electric Industries | Epitaxial substrate and semiconductor element |
| JP2007036052A (ja) * | 2005-07-28 | 2007-02-08 | Toshiba Corp | 半導体整流素子 |
| US8026568B2 (en) * | 2005-11-15 | 2011-09-27 | Velox Semiconductor Corporation | Second Schottky contact metal layer to improve GaN Schottky diode performance |
-
2008
- 2008-03-19 EP EP08722464A patent/EP2043157A4/en not_active Withdrawn
- 2008-03-19 JP JP2009506303A patent/JP5644105B2/ja not_active Expired - Fee Related
- 2008-03-19 KR KR1020087027687A patent/KR20090127035A/ko not_active Withdrawn
- 2008-03-19 CN CNA2008800002601A patent/CN101542736A/zh active Pending
- 2008-03-19 US US12/301,944 patent/US20100224952A1/en not_active Abandoned
- 2008-03-19 CA CA002652948A patent/CA2652948A1/en not_active Abandoned
- 2008-03-19 WO PCT/JP2008/055089 patent/WO2008117718A1/ja not_active Ceased
- 2008-03-26 TW TW097110859A patent/TW200845401A/zh unknown
-
2014
- 2014-08-19 JP JP2014166682A patent/JP2014241436A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CA2652948A1 (en) | 2008-10-02 |
| JP2014241436A (ja) | 2014-12-25 |
| US20100224952A1 (en) | 2010-09-09 |
| KR20090127035A (ko) | 2009-12-09 |
| JPWO2008117718A1 (ja) | 2010-07-15 |
| EP2043157A1 (en) | 2009-04-01 |
| JP5644105B2 (ja) | 2014-12-24 |
| CN101542736A (zh) | 2009-09-23 |
| EP2043157A4 (en) | 2011-11-16 |
| WO2008117718A1 (ja) | 2008-10-02 |
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