CN101542736A - 肖特基势垒二极管及其产生方法 - Google Patents

肖特基势垒二极管及其产生方法 Download PDF

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Publication number
CN101542736A
CN101542736A CNA2008800002601A CN200880000260A CN101542736A CN 101542736 A CN101542736 A CN 101542736A CN A2008800002601 A CNA2008800002601 A CN A2008800002601A CN 200880000260 A CN200880000260 A CN 200880000260A CN 101542736 A CN101542736 A CN 101542736A
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CN
China
Prior art keywords
schottky barrier
barrier diode
schottky
electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2008800002601A
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English (en)
Chinese (zh)
Inventor
宫崎富仁
木山诚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of CN101542736A publication Critical patent/CN101542736A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/043—Manufacture or treatment of planar diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Electrodes Of Semiconductors (AREA)
CNA2008800002601A 2007-03-26 2008-03-19 肖特基势垒二极管及其产生方法 Pending CN101542736A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP078275/2007 2007-03-26
JP2007078275 2007-03-26

Publications (1)

Publication Number Publication Date
CN101542736A true CN101542736A (zh) 2009-09-23

Family

ID=39788454

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2008800002601A Pending CN101542736A (zh) 2007-03-26 2008-03-19 肖特基势垒二极管及其产生方法

Country Status (8)

Country Link
US (1) US20100224952A1 (enExample)
EP (1) EP2043157A4 (enExample)
JP (2) JP5644105B2 (enExample)
KR (1) KR20090127035A (enExample)
CN (1) CN101542736A (enExample)
CA (1) CA2652948A1 (enExample)
TW (1) TW200845401A (enExample)
WO (1) WO2008117718A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107204A (zh) * 2011-11-11 2013-05-15 万国半导体股份有限公司 垂直氮化镓肖特基二极管
CN103199120A (zh) * 2013-04-23 2013-07-10 上海安微电子有限公司 一种台平面肖特基势垒二极管及其制备方法
CN103208534A (zh) * 2013-04-03 2013-07-17 上海安微电子有限公司 一种制程简化的肖特基器件及制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011210751A (ja) * 2010-03-26 2011-10-20 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子の製造方法、および電子装置
JP6516738B2 (ja) * 2013-07-11 2019-05-22 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物半導体を用いた電子デバイスおよびその製造方法、および該電子デバイスを製作するためのエピタキシャル多層ウエハ
JP6260553B2 (ja) * 2015-02-27 2018-01-17 豊田合成株式会社 半導体装置およびその製造方法

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US3523223A (en) * 1967-11-01 1970-08-04 Texas Instruments Inc Metal-semiconductor diodes having high breakdown voltage and low leakage and method of manufacturing
JPS4813273B1 (enExample) * 1968-10-18 1973-04-26
JPS4822390B1 (enExample) * 1969-03-18 1973-07-05
US3562606A (en) * 1969-08-13 1971-02-09 Varian Associates Subsurface gallium arsenide schottky-type diode and method of fabricating same
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
JPS5158866A (ja) * 1974-11-18 1976-05-22 Matsushita Electronics Corp Shotsutokiishohekigatahandotaisochi oyobi sonoseizohoho
JPS5712565A (en) * 1980-06-26 1982-01-22 Nec Corp Schottky barrier element
JPS5982774A (ja) * 1982-11-02 1984-05-12 Nec Corp 半導体装置
JPS59232467A (ja) * 1983-06-16 1984-12-27 Toshiba Corp ガ−ドリング付きシヨツトキ−バリヤ−ダイオ−ド
GB8413170D0 (en) * 1984-05-23 1984-06-27 British Telecomm Production of semiconductor devices
JPH08139341A (ja) * 1994-11-11 1996-05-31 Murata Mfg Co Ltd ショットキ−バリアダイオ−ド
US5895260A (en) * 1996-03-29 1999-04-20 Motorola, Inc. Method of fabricating semiconductor devices and the devices
DE19804580C2 (de) * 1998-02-05 2002-03-14 Infineon Technologies Ag Leistungsdiode in Halbleitermaterial
US6362495B1 (en) * 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
KR101017657B1 (ko) * 2002-04-30 2011-02-25 크리 인코포레이티드 고 전압 스위칭 디바이스 및 이의 제조 방법
US7253015B2 (en) * 2004-02-17 2007-08-07 Velox Semiconductor Corporation Low doped layer for nitride-based semiconductor device
EP1739726A4 (en) * 2004-03-26 2009-08-26 Kansai Electric Power Co BIPOLAR SEMICONDUCTOR ELEMENT AND PROCESS FOR ITS MANUFACTURE
TWI375994B (en) * 2004-09-01 2012-11-01 Sumitomo Electric Industries Epitaxial substrate and semiconductor element
JP2007036052A (ja) * 2005-07-28 2007-02-08 Toshiba Corp 半導体整流素子
US8026568B2 (en) * 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103107204A (zh) * 2011-11-11 2013-05-15 万国半导体股份有限公司 垂直氮化镓肖特基二极管
CN103107204B (zh) * 2011-11-11 2015-07-08 万国半导体股份有限公司 垂直氮化镓肖特基二极管
CN103208534A (zh) * 2013-04-03 2013-07-17 上海安微电子有限公司 一种制程简化的肖特基器件及制造方法
CN103199120A (zh) * 2013-04-23 2013-07-10 上海安微电子有限公司 一种台平面肖特基势垒二极管及其制备方法

Also Published As

Publication number Publication date
CA2652948A1 (en) 2008-10-02
JP2014241436A (ja) 2014-12-25
US20100224952A1 (en) 2010-09-09
KR20090127035A (ko) 2009-12-09
TW200845401A (en) 2008-11-16
JPWO2008117718A1 (ja) 2010-07-15
EP2043157A1 (en) 2009-04-01
JP5644105B2 (ja) 2014-12-24
EP2043157A4 (en) 2011-11-16
WO2008117718A1 (ja) 2008-10-02

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Open date: 20090923