JP5638572B2 - ポリシリコンの製造法 - Google Patents
ポリシリコンの製造法 Download PDFInfo
- Publication number
- JP5638572B2 JP5638572B2 JP2012150744A JP2012150744A JP5638572B2 JP 5638572 B2 JP5638572 B2 JP 5638572B2 JP 2012150744 A JP2012150744 A JP 2012150744A JP 2012150744 A JP2012150744 A JP 2012150744A JP 5638572 B2 JP5638572 B2 JP 5638572B2
- Authority
- JP
- Japan
- Prior art keywords
- stream
- hydrogen
- gas
- silicon
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229920005591 polysilicon Polymers 0.000 title claims description 6
- 239000007789 gas Substances 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 58
- 238000006243 chemical reaction Methods 0.000 claims description 53
- 229910052739 hydrogen Inorganic materials 0.000 claims description 48
- 239000001257 hydrogen Substances 0.000 claims description 48
- 238000001816 cooling Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 37
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 35
- 239000005049 silicon tetrachloride Substances 0.000 claims description 35
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- 238000003795 desorption Methods 0.000 claims description 25
- 238000001556 precipitation Methods 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 17
- 238000001179 sorption measurement Methods 0.000 claims description 16
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 14
- 150000002431 hydrogen Chemical class 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 13
- 239000005052 trichlorosilane Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 11
- 238000004821 distillation Methods 0.000 claims description 9
- 239000012495 reaction gas Substances 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- 230000008929 regeneration Effects 0.000 claims description 6
- 238000011069 regeneration method Methods 0.000 claims description 6
- 238000000746 purification Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 29
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 28
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 28
- 239000000376 reactant Substances 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 239000003463 adsorbent Substances 0.000 description 13
- 239000005046 Chlorosilane Substances 0.000 description 10
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 10
- 238000009835 boiling Methods 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- GCAXGCSCRRVVLF-UHFFFAOYSA-N 3,3,4,4-tetrachlorothiolane 1,1-dioxide Chemical compound ClC1(Cl)CS(=O)(=O)CC1(Cl)Cl GCAXGCSCRRVVLF-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000002336 sorption--desorption measurement Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
Description
a)トリクロロシランを包含するシリコン含有成分及び水素を含有する反応ガスにより析出反応器中でフィラメント上に多結晶シリコンを析出させること、その際、水素を基準としたシリコン含有成分のモル飽和度は少なくとも25%である;
b)析出からの排ガスを、排ガスを冷却するための装置に供給すること、
i)その際、冷却によって凝縮する、STCを含有する排ガスの成分を、凝縮物の蒸留精製を可能にする装置に導き、かつ
ii)冷却に際して凝縮しない成分を、吸着ユニット若しくは脱着ユニットに導く;
c)その際、吸着によって精製された、この凝縮しない成分の、水素を含有する第一の物質流を得ること;及び
d)その際、吸着ユニットの再生の間に、脱着及び洗浄ガスを用いた洗浄により、この凝縮しない成分の第二の物質流を得て、該物質流はSTCを含有し、かつ、好ましくはSTCをTCSに変換するための変換器に供給すること、
を包含する方法によって解決される。
Claims (9)
- ポリシリコンの製造法であって、
a)トリクロロシランを包含するシリコン含有成分及び水素を含有する反応ガスにより析出反応器中でフィラメント上に多結晶シリコンを析出させること、その際、水素を基準とした該シリコン含有成分のモル飽和度が少なくとも25%である;
b)該析出からの排ガスを、該排ガスを冷却するための装置に供給すること、
i)その際、該冷却によって凝縮する、四塩化ケイ素を含有する該排ガスの成分を、該凝縮物の蒸留精製を可能にする装置に導き、かつ
ii)該冷却に際して凝縮しない成分を、吸着ユニット若しくは脱着ユニットに導く;
c)その際、吸着によって精製された、この凝縮しない、水素を含有する成分の第一の物質流を取得すること;及び
d)その際、該吸着ユニットの再生中に、脱着及び洗浄ガスを用いた洗浄により、この凝縮しない成分の、四塩化ケイ素を含有する第二の物質流を取得し、前記第二の物質流を、四塩化ケイ素をトリクロロシランに変換するための変換器に供給すること、
を包含する方法。 - b)における前記排ガスを、−60℃以下の温度に冷却する、請求項1記載の方法。
- d)による前記脱着された前記第二の物質流を、前記変換器に供給し、その際、前記変換器が反応器及び冷却区域を包含し、かつ、前記第二の物質流を反応器と冷却区域の間で変換器中に導入し、かつ、そこで前記変換の生成物ガス流と混合する、請求項1又は請求項2記載の方法。
- d)による前記脱着された前記第二の物質流を、前記変換器の反応ゾーンにガスの状態で直接導入する、請求項1又は請求項2記載の方法。
- d)において、前記脱着された前記物質流を、前記物質流中のジクロロシランの割合について調べ、その際、前記物質流中のジクロロシランの百分率が、トリクロロシラン及び四塩化ケイ素の合計の割合より大きい場合、前記物質流を、b)による前記析出の前記排ガスを冷却するための装置に送り、そして前記析出の前記排ガスと混合する、請求項1から4までのいずれか1項記載の方法。
- 前記脱着の間の温度を0.9K/minより小さい速度で高める、請求項1から5までのいずれか1項記載の方法。
- c)により吸着によって精製された前記第一の物質流からの水素を、a)による前記析出における反応ガスとして使用する、請求項1から6までのいずれか1項記載の方法。
- c)により吸着によって精製された前記第一の物質流からの水素を、d)による前記脱着に際しての洗浄ガスとして使用する、請求項1から7までのいずれか1項記載の方法。
- 工程a)における水素を基準とした前記シリコン含有成分の前記モル飽和度が少なくとも30%である、請求項1から8までのいずれか1項記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011078676A DE102011078676A1 (de) | 2011-07-05 | 2011-07-05 | Verfahren zur Produktion von Polysilicium |
DE102011078676.7 | 2011-07-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013014504A JP2013014504A (ja) | 2013-01-24 |
JP5638572B2 true JP5638572B2 (ja) | 2014-12-10 |
Family
ID=46397044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012150744A Active JP5638572B2 (ja) | 2011-07-05 | 2012-07-04 | ポリシリコンの製造法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9988714B2 (ja) |
EP (1) | EP2551239B1 (ja) |
JP (1) | JP5638572B2 (ja) |
KR (1) | KR101445195B1 (ja) |
CN (1) | CN102862987B (ja) |
CA (1) | CA2778829C (ja) |
DE (1) | DE102011078676A1 (ja) |
ES (1) | ES2466190T3 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6069167B2 (ja) * | 2013-10-23 | 2017-02-01 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
US10016724B2 (en) | 2014-01-24 | 2018-07-10 | Hanwha Chemical Corporation | Purification method and purification apparatus for off-gas |
KR101538708B1 (ko) * | 2014-04-29 | 2015-07-22 | 한화케미칼 주식회사 | 폐가스의 정제방법 |
DE102014201893A1 (de) * | 2014-02-03 | 2015-08-06 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
KR102303581B1 (ko) * | 2016-06-23 | 2021-09-16 | 미쓰비시 마테리알 가부시키가이샤 | 다결정 실리콘 로드 및 그 제조 방법 |
KR102326287B1 (ko) | 2016-10-12 | 2021-11-15 | 가부시끼가이샤 도꾸야마 | 다결정 실리콘의 제조 방법 |
EP3649078A1 (de) | 2016-12-14 | 2020-05-13 | Wacker Chemie AG | Verfahren zur herstellung von polykristallinem silicium |
JP6870085B2 (ja) * | 2016-12-14 | 2021-05-12 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 多結晶シリコンの製造方法 |
WO2018131500A1 (ja) * | 2017-01-16 | 2018-07-19 | 株式会社トクヤマ | 多結晶シリコンの製造方法 |
CN106927469B (zh) * | 2017-04-12 | 2023-12-15 | 中国恩菲工程技术有限公司 | 氯硅烷废液的回收系统 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1106298B (de) | 1959-03-18 | 1961-05-10 | Siemens Ag | Verfahren zur Gewinnung von reinstem Silicium |
DE2918060A1 (de) | 1979-05-04 | 1980-11-13 | Siemens Ag | Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen |
US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
US4871524A (en) | 1987-09-03 | 1989-10-03 | Ethyl Corporation | Hydrogen purification process |
US6993060B2 (en) | 2002-02-27 | 2006-01-31 | Carbone Lorraine Composants | Resistor made from carbonaceous material |
JP4869671B2 (ja) * | 2004-10-05 | 2012-02-08 | 株式会社トクヤマ | シリコンの製造方法 |
DE102005046703A1 (de) | 2005-09-29 | 2007-04-05 | Wacker Chemie Ag | Verfahren und Vorrichtung zur Hydrierung von Chlorsilanen |
DE102007023041A1 (de) * | 2007-05-16 | 2008-11-20 | Wacker Chemie Ag | Polykristalliner Siliciumstab für das Zonenziehen und ein Verfahren zu dessen Herstellung |
CN101357764B (zh) * | 2007-07-31 | 2011-05-04 | 中国恩菲工程技术有限公司 | 可回收循环利用尾气中的氯化氢的多晶硅生产方法 |
CN101372336B (zh) | 2007-08-20 | 2011-04-13 | 中国恩菲工程技术有限公司 | 一种多晶硅生产方法 |
DE102007047210A1 (de) * | 2007-10-02 | 2009-04-09 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu seiner Herstellung |
CN101279178B (zh) | 2008-01-04 | 2010-11-24 | 广州吉必盛科技实业有限公司 | 一种回收三氯氢硅生产尾气中h2的方法和装置 |
RU2388690C2 (ru) * | 2008-05-22 | 2010-05-10 | Общество с ограниченной ответственностью "Группа СТР" | Способ получения поликристаллического кремния |
CN102272047B (zh) | 2009-02-04 | 2013-07-31 | 株式会社德山 | 多晶硅的制造方法 |
-
2011
- 2011-07-05 DE DE102011078676A patent/DE102011078676A1/de not_active Withdrawn
-
2012
- 2012-05-30 CA CA2778829A patent/CA2778829C/en not_active Expired - Fee Related
- 2012-06-21 KR KR1020120066615A patent/KR101445195B1/ko active IP Right Grant
- 2012-06-26 US US13/533,441 patent/US9988714B2/en active Active
- 2012-06-27 ES ES12173743.1T patent/ES2466190T3/es active Active
- 2012-06-27 EP EP12173743.1A patent/EP2551239B1/de active Active
- 2012-07-04 JP JP2012150744A patent/JP5638572B2/ja active Active
- 2012-07-05 CN CN201210232310.7A patent/CN102862987B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
DE102011078676A1 (de) | 2013-01-10 |
EP2551239A1 (de) | 2013-01-30 |
JP2013014504A (ja) | 2013-01-24 |
ES2466190T3 (es) | 2014-06-09 |
CA2778829A1 (en) | 2013-01-05 |
EP2551239B1 (de) | 2014-03-26 |
KR20130005223A (ko) | 2013-01-15 |
US20130011558A1 (en) | 2013-01-10 |
KR101445195B1 (ko) | 2014-09-29 |
CN102862987A (zh) | 2013-01-09 |
CA2778829C (en) | 2014-09-23 |
US9988714B2 (en) | 2018-06-05 |
CN102862987B (zh) | 2016-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5638572B2 (ja) | ポリシリコンの製造法 | |
JP5485238B2 (ja) | 多結晶シリコンの製造方法 | |
JP4740646B2 (ja) | シリコンの製造方法 | |
JP5632362B2 (ja) | 純シリコンを製造するための方法およびシステム | |
US20110150739A1 (en) | Method for removing boron-containing impurities from halogen silanes and apparatus for performing said method | |
JP4878377B2 (ja) | 多結晶シリコンの堆積方法 | |
JP5718352B2 (ja) | トリクロロシランの製造システム及び方法 | |
JP2008513325A (ja) | シランを製造する装置および方法 | |
JP2008536784A (ja) | Si2h6およびより高次のシランを製造するためのシステムおよび方法 | |
JP5637866B2 (ja) | 多結晶シリコンの製造法 | |
CN103402623A (zh) | 用于制备含氢氯硅烷的复合方法 | |
JP2010150131A (ja) | 多結晶シリコン製造方法及び製造装置 | |
KR20130116311A (ko) | 사염화규소를 트리클로로실란으로 전환하기 위한 방법 및 장치 | |
US20120177559A1 (en) | Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds | |
WO2014100705A1 (en) | Conserved off gas recovery systems and processes | |
CN105980305B (zh) | 三氯氢硅制造工艺 | |
CN114715901A (zh) | 一种催化合成制备多氯硅烷的装置及其方法 | |
JP2006176357A (ja) | ヘキサクロロジシランの製造方法 | |
WO2016047736A1 (ja) | ペンタクロロジシランの製造方法並びに該方法により製造されるペンタクロロジシラン | |
CN106032275A (zh) | 三氯氢硅合成工艺及系统 | |
US8975563B2 (en) | Method and apparatus for the contamination-free heating of gases | |
JP2015113250A (ja) | テトラクロロシランの精製方法 | |
WO2011084427A2 (en) | Methods and systems for producing silicon, e.g., polysilicon, including recycling byproducts | |
JP2010275162A (ja) | 多結晶シリコン製造方法及び製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131021 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140924 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141022 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5638572 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |