JP5584689B2 - 2次元ターゲットを用いたリソグラフィの焦点及びドーズ測定 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
- G03F7/70675—Latent image, i.e. measuring the image of the exposed resist prior to development
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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Description
[0001] 本願は、参照によりその全体を本明細書に組み込むものとする、2008年10月6日出願の米国仮出願第61/103,078号の利益を主張する。
[0109] 特許請求の範囲を解釈するには、「発明の概要」及び「要約」の項目ではなく、「発明を実施するための形態」の項目を使用するよう意図されていることを認識されたい。「発明の概要」及び「要約」の項目は、発明者が想定するような本発明の1つ又は複数の例示的実施形態について述べることができるが、全部の例示的実施形態を述べることはできず、したがって本発明及び特許請求の範囲をいかなる意味でも限定しないものとする。
Claims (12)
- 露光装置の焦点及び/又はドーズ関連の特性を測定する方法であって、前記方法が、
測定される露光装置と、マーカを生成するパターンを含むマスクを用いて基板上に前記マーカを印刷するステップであって、前記パターンが構造の2次元アレイを含み、前記2次元アレイが前記露光装置によって解像可能な一方向のピッチと、露光装置によって解像不能な第1の方向とは別の第2の方向のピッチとを有し、かつ、前記2次元アレイが前記第1及び前記第2の方向で複数の異なるサブ構造を有するステップと、
前記マスクを用いて前記露光装置によって露光された前記基板の特性を測定するステップとを含み、該ステップが、
前記基板上の前記マーカに放射ビームを投影するステップと、
前記基板上の前記マーカから反射した放射を検出するステップと、
前記反射した放射の特性から前記露光装置の焦点及びドーズ関連の特性のうち少なくとも一方を決定するステップとを含む方法。 - 測定される前記露光装置の結果として得られる焦点及び/又はドーズ関連の測定値が、焦点及び/又はドーズ関連の特性の誤差の補正のために前記露光装置にフィードバックされる、請求項1に記載の方法。
- 様々な周知の焦点オフセット及び/又はドーズオフセットを用いて前記基板上の前記マーカを印刷するステップと、
周知の焦点オフセット及び/又はドーズオフセットの関数としての前記反射した放射の特性の変化を測定するステップと、
前記特性の変動の測定に基づいて前記反射した放射の特性と焦点オフセット及び/又はドーズオフセットとの関係のライブラリを格納するステップと
をさらに含む、請求項1に記載の方法。 - 前記露光装置の様々な焦点オフセット及び/又はドーズオフセットに応答してマーカパターン及び/又は前記反射した放射をシミュレートするステップと、
前記放射をシミュレートした結果に基づいて様々な焦点オフセット及び/又はドーズオフセットのマーカパターン及び/又は反射した放射の特性の数学的モデルを格納するステップとをさらに含む、請求項1に記載の方法。 - 露光装置で使用されるマスクであって、前記マスクが基板上にマーカを印刷するためのパターンを含み、前記パターンが構造の2次元アレイを含み、前記2次元アレイが前記露光装置によって解像可能な一方向の第1のピッチと、前記露光装置によって解像不能な第1の方向とは別の第2の方向の第2のピッチとを有し、かつ、前記2次元アレイが前記第1及び前記第2の方向で複数の異なるサブ構造を有するマスク。
- 前記第2の方向の前記第2のピッチが測定する前記露光装置によって印刷可能な大きさより小さくなるように、前記パターンが離間した構造のアレイを含む、請求項5に記載のマスク。
- 前記第1のピッチが、解像され、可変である、請求項5に記載のマスク。
- 露光装置の焦点及び/又はドーズ関連の特性を測定する検査システムであって、前記検査システムが、
測定される前記露光装置を用いて基板上にマーカを印刷するパターンを含むマスクであって、前記パターンが構造の2次元アレイを含み、前記2次元アレイが測定される前記露光装置によって解像可能な一方向のピッチと測定される露光装置によって解像不能な第1の方向とは別の第2の方向のピッチとを有し、かつ、前記2次元アレイが前記第1及び前記第2の方向で複数の異なるサブ構造を有するマスクと、
マーカがマスクを用いて前記露光装置によって印刷された基板の特性を測定する検査装置であって、
放射源と、
前記放射源からの放射を前記マーカ上に誘導する投影システムと、
前記マーカから反射した放射を検出する検出器と、
前記反射した放射の特性から前記露光装置の焦点及びドーズ関連の特性のうち少なくとも一方を決定するプロセッサと、
を備える検査装置と、
を備える検査システム。 - 前記プロセッサが、前記反射した放射の特性と焦点及び/又はドーズ関連の特性との間の以前に測定され、シミュレートされ、及び/又は外挿された関係のライブラリと前記反射した放射とを比較することで前記露光装置の焦点及びドーズ関連の特性のうち少なくとも一方を決定する、請求項8に記載の検査システム。
- パターンを含むマスクを用いて露光装置によってマーカが印刷された基板の特性を測定する検査装置であって、前記マーカが構造の2次元アレイを含むパターンを用いて印刷され、前記2次元アレイが解像可能なマーカ内の一方向のピッチと、解像不能な第1の方向とは別のマーカ内の第2の方向のピッチとを有し、かつ、前記2次元アレイが前記第1及び前記第2の方向で複数の異なるサブ構造を有する前記検査装置が、
放射源と、
前記放射源からの放射を前記マーカ上に誘導する投影システムと、
前記マーカから反射した放射を検出する検出器と、
前記検出された放射、前記反射した放射の特性、前記マーカを印刷する前記露光装置の焦点及び/又はドーズ関連の特性から前記マーカの特性を決定するプロセッサと、
を備える検査装置。 - 前記プロセッサが、前記反射した放射の特性と焦点及び/又はドーズ関連の特性との間の以前に測定され、シミュレートされ、及び/又は外挿された関係のライブラリと前記反射した放射とを比較することで前記露光装置の焦点及びドーズ関連の特性のうち少なくとも一方を決定する、請求項10に記載の検査装置。
- 基板を放射感応性層でコーティングするように配置されたコータと、
前記コータによってコーティングされた前記基板の前記放射感応性層上に画像を露光するリソグラフィ装置と、
前記リソグラフィ装置によって露光された画像を現像する現像装置と、
パターンを含むマスクを用いて露光装置によってマーカが印刷された基板の特性を測定する検査装置であって、前記マーカが構造の2次元アレイを含むパターンを用いて印刷され、前記2次元アレイが前記マーカ内で解像される一方向のピッチと、前記マーカ内で解像されない第1の方向とは別の第2の方向のピッチとを有し、かつ、前記2次元アレイが前記第1及び前記第2の方向で複数の異なるサブ構造を有する検査装置と、
を備えるリソグラフィセルであって、前記検査装置が、
放射源と、
前記放射源からの放射を前記マーカ上に誘導する投影システムと、
前記マーカから反射した放射を検出する検出器と、
前記検出された放射、前記反射した放射の特性、前記マーカを印刷するのに使用される前記露光装置の焦点又はドーズ関連の特性から前記マーカの特性を決定するプロセッサと、
を備えるリソグラフィセル。
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Application Number | Priority Date | Filing Date | Title |
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US10307808P | 2008-10-06 | 2008-10-06 | |
US61/103,078 | 2008-10-06 | ||
PCT/EP2009/062840 WO2010040696A1 (en) | 2008-10-06 | 2009-10-02 | Lithographic focus and dose measurement using a 2-d target |
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JP2012504859A JP2012504859A (ja) | 2012-02-23 |
JP5584689B2 true JP5584689B2 (ja) | 2014-09-03 |
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US (2) | US8891061B2 (ja) |
JP (1) | JP5584689B2 (ja) |
KR (1) | KR101295203B1 (ja) |
CN (1) | CN102171618B (ja) |
IL (1) | IL211685A (ja) |
NL (1) | NL2003589A (ja) |
WO (1) | WO2010040696A1 (ja) |
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CN102171618B (zh) | 2014-03-19 |
CN102171618A (zh) | 2011-08-31 |
IL211685A (en) | 2015-10-29 |
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