JP5572218B2 - 検査方法及び装置 - Google Patents
検査方法及び装置 Download PDFInfo
- Publication number
- JP5572218B2 JP5572218B2 JP2012533547A JP2012533547A JP5572218B2 JP 5572218 B2 JP5572218 B2 JP 5572218B2 JP 2012533547 A JP2012533547 A JP 2012533547A JP 2012533547 A JP2012533547 A JP 2012533547A JP 5572218 B2 JP5572218 B2 JP 5572218B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- region
- data
- radiation
- radiation beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 35
- 238000007689 inspection Methods 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 89
- 230000005855 radiation Effects 0.000 claims description 77
- 238000001228 spectrum Methods 0.000 claims description 38
- 230000007547 defect Effects 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 11
- 238000005286 illumination Methods 0.000 claims description 11
- 238000004590 computer program Methods 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 36
- 238000005259 measurement Methods 0.000 description 23
- 238000000059 patterning Methods 0.000 description 23
- 238000012545 processing Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 230000015654 memory Effects 0.000 description 8
- 238000001459 lithography Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 210000001747 pupil Anatomy 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 230000003954 pattern orientation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Immunology (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
[0075] 「発明の概要」及び「要約書」の項は、本発明者が想定するような本発明の1つ又は複数の例示的実施形態について述べることができるが、全部の例示的実施形態を述べることはできず、したがって本発明及び添付の特許請求の範囲をいかなる意味でも限定しないものとする。
Claims (19)
- 基板検査の方法であって、
(a)前記基板のある領域を放射ビームで照明し、散乱放射を検出して第1の散乱データを入手するステップと、
(b)第1の散乱データを第2の散乱データと比較するステップと、
(c)前記比較に基づいて前記領域における前記基板の欠陥の存在を決定するステップと、を含み、
前記照明及び検出(a)が前記領域にわたってスキャン経路に沿って実行され、それにより前記領域上に空間的に集積された第1の散乱データを入手し、
前記第2の散乱データが、散乱データのライブラリを含み、
前記ライブラリが、前記スキャン経路の方向に垂直な位置範囲の散乱データを含む、方法。 - 前記領域がストリップを含む、請求項1に記載の検査方法。
- 前記第1及び第2の散乱データが回折スペクトルを含む、請求項1又は請求項2に記載の検査方法。
- 前記回折スペクトルが角度分解される、請求項3に記載の検査方法。
- 前記第2の散乱データが、基板の基準領域の測定によって入手される、請求項1乃至4のいずれかに記載の検査方法。
- 前記基準領域がストリップである、請求項5に記載の検査方法。
- 前記第2の散乱データが、基準領域のモデルからの計算によって入手される、請求項1乃至4のいずれかに記載の検査方法。
- 前記基準領域がストリップである、請求項7に記載の検査方法。
- 前記スキャン経路の方向に垂直な位置範囲が、前記放射ビームの位置の不確実性及び前記放射ビームのサイズを用いて計算される距離にわたる、請求項1乃至8に記載の検査方法。
- 基板検査装置であって、
基板のある領域を放射ビームで照明する放射源と、
散乱放射を検出して第1の散乱データを入手するディテクタと、
前記第1の散乱データを第2の散乱データと比較し、該比較に基づいて前記基板のその領域の欠陥の存在を決定する少なくとも1つのプロセッサと、を備え、
前記照明及び検出が前記領域にわたってスキャン経路に沿って実行され、これにより前記領域上に空間的に集積された第1の散乱データを入手し、
前記第2の散乱データが、散乱データのライブラリを含み、
前記ライブラリが、前記スキャン経路の方向に垂直な位置範囲の散乱データを含む、検査装置。 - 前記領域がストリップを含む、請求項10に記載の検査装置。
- 前記第1及び第2の散乱データが回折スペクトルを含む、請求項10又は請求項11に記載の検査装置。
- 前記回折スペクトルが角度分解される、請求項12に記載の検査装置。
- 前記第2の散乱データが、基板の基準領域の測定によって入手される、請求項10乃至13のいずれかに記載の検査装置。
- 前記基準領域がストリップである、請求項14に記載の検査装置。
- 前記第2の散乱データが、基準領域のモデルからの計算によって入手される、請求項10乃至13のいずれかに記載の検査装置。
- 前記基準領域がストリップである、請求項16に記載の検査装置。
- 前記スキャン経路の方向に垂直な位置範囲が、前記放射ビームの位置の不確実性及び前記放射ビームのサイズを用いて計算される距離にわたる、請求項10乃至17に記載の検査装置。
- 基板検査のための機械可読命令の1つ又は複数のシーケンスを含むコンピュータプログラムであって、前記命令が、1つ又は複数のプロセッサに、
(a)前記基板のある領域を放射ビームで照明し、散乱放射を検出して第1の散乱データを入手するように制御させ、
(b)前記第1の散乱データを第2の散乱データと比較させ、
(c)前記比較に基づいて前記領域における前記基板の欠陥の存在を決定させる、
ように適合され、
前記照明及び検出(a)が前記領域にわたってスキャン経路に沿って実行され、これにより前記領域上に空間的に集積された第1の散乱データを入手し、
前記第2の散乱データが、散乱データのライブラリを含み、
前記ライブラリが、前記スキャン経路の方向に垂直な位置範囲の散乱データを含む、コンピュータプログラム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25103109P | 2009-10-13 | 2009-10-13 | |
US61/251,031 | 2009-10-13 | ||
PCT/EP2010/063184 WO2011045125A1 (en) | 2009-10-13 | 2010-09-08 | Inspection method and apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013507625A JP2013507625A (ja) | 2013-03-04 |
JP5572218B2 true JP5572218B2 (ja) | 2014-08-13 |
Family
ID=43016615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012533547A Active JP5572218B2 (ja) | 2009-10-13 | 2010-09-08 | 検査方法及び装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8749775B2 (ja) |
JP (1) | JP5572218B2 (ja) |
KR (1) | KR101452852B1 (ja) |
CN (1) | CN102687073B (ja) |
IL (1) | IL218738A (ja) |
NL (1) | NL2005332A (ja) |
WO (1) | WO2011045125A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2009853A (en) | 2011-12-23 | 2013-06-26 | Asml Netherlands Bv | Methods and apparatus for measuring a property of a substrate. |
US9194800B2 (en) * | 2012-10-29 | 2015-11-24 | Tokitae Llc | Systems, devices, and methods employing angular-resolved scattering and spectrally resolved measurements for classification of objects |
US9097645B2 (en) * | 2013-08-23 | 2015-08-04 | Kla-Tencor Corporation | Method and system for high speed height control of a substrate surface within a wafer inspection system |
US9076688B1 (en) * | 2014-03-10 | 2015-07-07 | Globalfoundries Inc. | Scatterometry for nested and isolated structures |
JP6491677B2 (ja) * | 2014-06-10 | 2019-03-27 | エーエスエムエル ネザーランズ ビー.ブイ. | 計算的ウェーハ検査 |
CN104062233B (zh) * | 2014-06-26 | 2015-06-03 | 浙江大学 | 精密表面缺陷散射三维显微成像装置 |
US10012599B2 (en) * | 2015-04-03 | 2018-07-03 | Kla-Tencor Corp. | Optical die to database inspection |
WO2017025373A1 (en) * | 2015-08-12 | 2017-02-16 | Asml Netherlands B.V. | Inspection apparatus, inspection method and manufacturing method |
WO2017108444A1 (en) * | 2015-12-24 | 2017-06-29 | Asml Netherlands B.V. | Method and apparatus for inspection |
US10372114B2 (en) * | 2016-10-21 | 2019-08-06 | Kla-Tencor Corporation | Quantifying and reducing total measurement uncertainty |
US11222799B2 (en) * | 2017-10-18 | 2022-01-11 | Kla Corporation | Swath selection for semiconductor inspection |
EP3503157A1 (en) * | 2017-12-22 | 2019-06-26 | ASML Netherlands B.V. | Inspection tool and method of determining a distortion of an inspection tool |
US10761032B1 (en) * | 2019-02-26 | 2020-09-01 | Bwxt Nuclear Operations Group, Inc. | Apparatus and method for inspection of a film on a substrate |
CN110208287A (zh) * | 2019-07-03 | 2019-09-06 | 东莞创视自动化科技有限公司 | Oled屏偏光型同轴结构光检测法与oled屏偏光检测装置 |
CN111276414A (zh) * | 2020-02-03 | 2020-06-12 | 长江存储科技有限责任公司 | 一种检测方法及装置 |
CN111552151B (zh) * | 2020-04-03 | 2022-06-14 | 合肥芯碁微电子装备股份有限公司 | 双向扫描的拼接错位补偿方法和无掩膜光刻设备 |
CN114888714B (zh) * | 2022-04-27 | 2023-05-30 | 北京晶亦精微科技股份有限公司 | 一种晶圆抛光的保护方法、装置、设备及介质 |
CN115962718B (zh) * | 2023-03-16 | 2023-08-04 | 长鑫存储技术有限公司 | 位置检测方法、电子设备以及计算机可读存储介质 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751243A (en) * | 1990-10-29 | 1998-05-12 | Essex Corporation | Image synthesis using time sequential holography |
JP3210713B2 (ja) * | 1992-02-14 | 2001-09-17 | ベルトロニクス,インコーポレイテッド | 所定の特徴及び許容差の識別のための画像化パターンの収縮、拡張及び処理を用いた幾何学的パターン検査方法及び装置 |
CN1214116A (zh) * | 1996-03-15 | 1999-04-14 | 株式会社日立制作所 | 表面晶体缺陷的测量方法及装置 |
CN1045492C (zh) * | 1996-10-18 | 1999-10-06 | 清华大学 | 一种基于散射原理对不透明固体材料内部微/纳米级体缺陷的检测方法 |
JP3404274B2 (ja) * | 1997-12-26 | 2003-05-06 | 株式会社日立製作所 | ウエハ検査装置 |
US6137570A (en) * | 1998-06-30 | 2000-10-24 | Kla-Tencor Corporation | System and method for analyzing topological features on a surface |
US6510395B2 (en) * | 2000-08-11 | 2003-01-21 | Sensys Instruments Corporation | Method of detecting residue on a polished wafer |
US6791099B2 (en) * | 2001-02-14 | 2004-09-14 | Applied Materials, Inc. | Laser scanning wafer inspection using nonlinear optical phenomena |
US20020177245A1 (en) * | 2001-03-29 | 2002-11-28 | Sonderman Thomas J. | Method and apparatus for controlling feature critical dimensions based on scatterometry derived profile |
US6986280B2 (en) * | 2002-01-22 | 2006-01-17 | Fei Company | Integrated measuring instrument |
US7359045B2 (en) * | 2002-05-06 | 2008-04-15 | Applied Materials, Israel, Ltd. | High speed laser scanning inspection system |
KR100543536B1 (ko) * | 2002-09-20 | 2006-01-20 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 마커구조체, 상기 리소그래피 마커구조체를포함하는 리소그래피 투영장치 및 상기 리소그래피마커구조체를 사용하여 기판을 정렬하는 방법 |
US7068363B2 (en) * | 2003-06-06 | 2006-06-27 | Kla-Tencor Technologies Corp. | Systems for inspection of patterned or unpatterned wafers and other specimen |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
EP1628184A1 (de) | 2004-08-20 | 2006-02-22 | Basf Aktiengesellschaft | Verfahren und Computersystem zur Durchführung eines netzwerkgestützten Geschäftsprozesses |
US20060164649A1 (en) * | 2005-01-24 | 2006-07-27 | Eliezer Rosengaus | Multi-spectral techniques for defocus detection |
JP2007113941A (ja) * | 2005-10-18 | 2007-05-10 | Ohkura Industry Co | 欠陥検査装置及び欠陥検査方法 |
US7567351B2 (en) * | 2006-02-02 | 2009-07-28 | Kla-Tencor Corporation | High resolution monitoring of CD variations |
US7567344B2 (en) * | 2006-05-12 | 2009-07-28 | Corning Incorporated | Apparatus and method for characterizing defects in a transparent substrate |
WO2007137261A2 (en) * | 2006-05-22 | 2007-11-29 | Kla-Tencor Technologies Corporation | Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool |
CN1908638A (zh) * | 2006-08-24 | 2007-02-07 | 上海交通大学 | 玻璃缺陷的光学检测装置 |
US7630087B2 (en) * | 2006-11-22 | 2009-12-08 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
US20080135774A1 (en) * | 2006-12-08 | 2008-06-12 | Asml Netherlands B.V. | Scatterometer, a lithographic apparatus and a focus analysis method |
US7599064B2 (en) * | 2007-03-07 | 2009-10-06 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods |
KR20080085790A (ko) * | 2007-03-20 | 2008-09-24 | 도쿄엘렉트론가부시키가이샤 | 광 나노젯에 의한 광학 계측을 이용한 자동화 프로세스제어 방법, 제조 클러스터의 제어 시스템 및 컴퓨터 판독가능한 저장 매체 |
US8189195B2 (en) * | 2007-05-09 | 2012-05-29 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
JP5319930B2 (ja) * | 2008-02-20 | 2013-10-16 | 株式会社日立ハイテクノロジーズ | 欠陥検査装置及び欠陥検査方法 |
NL1036734A1 (nl) * | 2008-04-09 | 2009-10-12 | Asml Netherlands Bv | A method of assessing a model, an inspection apparatus and a lithographic apparatus. |
-
2010
- 2010-09-08 CN CN201080046242.4A patent/CN102687073B/zh active Active
- 2010-09-08 WO PCT/EP2010/063184 patent/WO2011045125A1/en active Application Filing
- 2010-09-08 KR KR1020127011657A patent/KR101452852B1/ko active IP Right Grant
- 2010-09-08 NL NL2005332A patent/NL2005332A/en not_active Application Discontinuation
- 2010-09-08 JP JP2012533547A patent/JP5572218B2/ja active Active
- 2010-09-15 US US12/882,631 patent/US8749775B2/en active Active
-
2012
- 2012-03-19 IL IL218738A patent/IL218738A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN102687073A (zh) | 2012-09-19 |
KR20120059646A (ko) | 2012-06-08 |
IL218738A0 (en) | 2012-06-28 |
IL218738A (en) | 2016-08-31 |
US8749775B2 (en) | 2014-06-10 |
WO2011045125A1 (en) | 2011-04-21 |
JP2013507625A (ja) | 2013-03-04 |
KR101452852B1 (ko) | 2014-10-22 |
CN102687073B (zh) | 2014-08-27 |
US20110085162A1 (en) | 2011-04-14 |
NL2005332A (en) | 2011-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5572218B2 (ja) | 検査方法及び装置 | |
JP4787232B2 (ja) | 測定方法、検査装置、およびリソグラフィ装置 | |
JP5584689B2 (ja) | 2次元ターゲットを用いたリソグラフィの焦点及びドーズ測定 | |
US10591283B2 (en) | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method | |
KR101129332B1 (ko) | 검사 장치, 리소그래피 장치, 리소그래피 처리 셀 및 검사 방법 | |
JP5663027B2 (ja) | 基板上のオブジェクトの概略構造を決定する方法、検査装置、コンピュータプログラム、及びコンピュータ可読媒体 | |
JP4980264B2 (ja) | 検査方法、デバイス製造方法、検査装置、基板、マスク、リソグラフィ装置、及びリソグラフィセル | |
US9529278B2 (en) | Inspection apparatus to detect a target located within a pattern for lithography | |
US20080074666A1 (en) | Method and apparatus for angular-resolved spectroscopic lithography characterization | |
JP2012500384A (ja) | 基板のモデルを評価する方法、検査装置及びリソグラフィ装置 | |
US20120033193A1 (en) | Inspection Apparatus and Method, Lithographic Apparatus and Lithographic Processing Cell | |
JP2008098636A (ja) | 検査方法および装置、リソグラフィ装置、リソグラフィ処理セルおよびデバイス製造方法 | |
JP2009002931A (ja) | 計測ツールのキャリブレーションに使用する基板を形成する方法、キャリブレーション基板および計測ツールをキャリブレーションする方法 | |
US20110028004A1 (en) | Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method | |
US9304077B2 (en) | Inspection apparatus and method | |
US20120092636A1 (en) | Metrology Apparatus, Lithography Apparatus and Method of Measuring a Property of a Substrate | |
US20110020616A1 (en) | Method of Determining Overlay Error and a Device Manufacturing Method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130829 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131129 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140624 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140627 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5572218 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |