JP5575657B2 - 少なくとも２つの発光半導体素子を備えたデバイスの製造方法 - Google Patents

少なくとも２つの発光半導体素子を備えたデバイスの製造方法 Download PDF

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JP5575657B2
JP5575657B2 JP2010535209A JP2010535209A JP5575657B2 JP 5575657 B2 JP5575657 B2 JP 5575657B2 JP 2010535209 A JP2010535209 A JP 2010535209A JP 2010535209 A JP2010535209 A JP 2010535209A JP 5575657 B2 JP5575657 B2 JP 5575657B2
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emitting semiconductor
light emitting
light
semiconductor elements
cover
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JP2011505071A (ja
JP2011505071A5 (enExample
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ジンガー フランク
ツァイラー トーマス
ライル ヨアヒム
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H10W74/00—
    • H10W74/142—
    • H10W90/756—
JP2010535209A 2007-11-27 2008-11-18 少なくとも２つの発光半導体素子を備えたデバイスの製造方法 Active JP5575657B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007056925 2007-11-27
DE102007056925.6 2007-11-27
DE102008011153.8 2008-02-26
DE102008011153.8A DE102008011153B4 (de) 2007-11-27 2008-02-26 Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen
PCT/DE2008/001902 WO2009067989A1 (de) 2007-11-27 2008-11-18 Anordnung mit mindestens zwei lichtemittierenden halbleiterbauelementen und verfahren zur herstellung einer solchen anordnung

Related Child Applications (1)

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JP2014136894A Division JP6012670B2 (ja) 2007-11-27 2014-07-02 少なくとも２つの発光半導体素子を備えたデバイス

Publications (3)

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JP2011505071A JP2011505071A (ja) 2011-02-17
JP2011505071A5 JP2011505071A5 (enExample) 2011-12-15
JP5575657B2 true JP5575657B2 (ja) 2014-08-20

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JP2010535209A Active JP5575657B2 (ja) 2007-11-27 2008-11-18 少なくとも２つの発光半導体素子を備えたデバイスの製造方法
JP2014136894A Active JP6012670B2 (ja) 2007-11-27 2014-07-02 少なくとも２つの発光半導体素子を備えたデバイス

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Country Link
US (1) US8426875B2 (enExample)
EP (1) EP2215657B1 (enExample)
JP (2) JP5575657B2 (enExample)
KR (1) KR101511816B1 (enExample)
CN (1) CN101874302A (enExample)
DE (1) DE102008011153B4 (enExample)
WO (1) WO2009067989A1 (enExample)

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* Cited by examiner, † Cited by third party
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DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
US8987022B2 (en) * 2011-01-17 2015-03-24 Samsung Electronics Co., Ltd. Light-emitting device package and method of manufacturing the same
DE102011003969B4 (de) 2011-02-11 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012105677B4 (de) 2012-06-28 2016-06-09 Osram Opto Semiconductors Gmbh Leuchtdiodenmodul und Kfz-Scheinwerfer
DE102012212963B4 (de) 2012-07-24 2022-09-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102012212968A1 (de) 2012-07-24 2014-01-30 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element
DE102012113003A1 (de) * 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP6186904B2 (ja) 2013-06-05 2017-08-30 日亜化学工業株式会社 発光装置
DE102013213073A1 (de) * 2013-07-04 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelementes
KR102222580B1 (ko) 2014-07-30 2021-03-05 삼성전자주식회사 발광 소자 패키지 및 이를 포함하는 표시 장치
DE102014116134A1 (de) * 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102017107226A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterbauelemente und strahlungsemittierendes Halbleiterbauelement
DE102018111637A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
DE102018118251B4 (de) 2018-07-27 2020-02-06 Infineon Technologies Ag Chipanordnung und Verfahren zur Herstellung derselben

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JP2004319530A (ja) 2003-02-28 2004-11-11 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
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JP4861343B2 (ja) * 2006-02-06 2012-01-25 京セミ株式会社 受光又は発光用半導体モジュール
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KR20080022069A (ko) * 2006-09-05 2008-03-10 미쓰이 긴조꾸 고교 가부시키가이샤 프린트 배선 기판
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Also Published As

Publication number Publication date
KR20100105631A (ko) 2010-09-29
DE102008011153A1 (de) 2009-05-28
JP2011505071A (ja) 2011-02-17
CN101874302A (zh) 2010-10-27
EP2215657B1 (de) 2013-07-10
DE102008011153B4 (de) 2023-02-02
JP6012670B2 (ja) 2016-10-25
JP2014207473A (ja) 2014-10-30
EP2215657A1 (de) 2010-08-11
KR101511816B1 (ko) 2015-04-17
US8426875B2 (en) 2013-04-23
WO2009067989A1 (de) 2009-06-04
US20110186867A1 (en) 2011-08-04

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