JP6012670B2 - 少なくとも2つの発光半導体素子を備えたデバイス - Google Patents
少なくとも2つの発光半導体素子を備えたデバイス Download PDFInfo
- Publication number
- JP6012670B2 JP6012670B2 JP2014136894A JP2014136894A JP6012670B2 JP 6012670 B2 JP6012670 B2 JP 6012670B2 JP 2014136894 A JP2014136894 A JP 2014136894A JP 2014136894 A JP2014136894 A JP 2014136894A JP 6012670 B2 JP6012670 B2 JP 6012670B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting semiconductor
- light
- semiconductor elements
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 165
- 230000003287 optical effect Effects 0.000 claims description 85
- 239000000463 material Substances 0.000 claims description 52
- 238000006243 chemical reaction Methods 0.000 claims description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 15
- 239000004033 plastic Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 239000012778 molding material Substances 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 239000002991 molded plastic Substances 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Description
Claims (13)
- デバイスであって、
相互に隣接する少なくとも2つの発光半導体素子(101,111)と、
前記少なくとも2つの発光半導体素子(101,111)のそれぞれを少なくとも部分的に包囲し、各発光半導体素子(101,111)から放出された光の波長領域を部分的にまたは完全に変換する変換物質を含む複数の包囲部材(102,112)と、
前記少なくとも2つの発光半導体素子(101,111)のあいだに配置されて各包囲部材(102,112)を光学的に分離する少なくとも1つの光学減衰素子(801)と
を有しており、
前記光学減衰素子(801)は、少なくとも1つの或る発光半導体素子(101)から放出された光の、少なくとも1つの別の発光半導体素子(111)の包囲部材(112)への入力、または、少なくとも1つの或る包囲部材(102)から放出された光の、少なくとも1つの別の包囲部材(112)への入力が低減されるように配置されており、
前記デバイスは、前記少なくとも2つの発光半導体素子(101,111)を保護する透光性カバー(802)を含み、
前記光学減衰素子(801)は、前記透光性カバー(802)の一部として、前記透光性カバー(802)の成形部によって形成されており、前記成形部は前記透光性カバー(802)と一体に構成されておりかつ不透光性材料によってコーティングされており、
前記成形部は、三角形状の断面を有し、かつ、各発光半導体素子(101,111)が光学的に分離される位置にくさび形に形成されている、
ことを特徴とするデバイス。 - 前記成形部と前記透光性カバー(802)とは同じ材料から製造されている、請求項1記載のデバイス。
- 前記成形部(801)は前記複数の包囲部材(102,112)が光学的に分離される高さで構成されている、請求項1または2記載のデバイス。
- 前記不透光性材料は金属層である、請求項1から3までのいずれか1項記載のデバイス。
- 前記不透光性材料はクロムを含む、請求項1から4までのいずれか1項記載のデバイス。
- デバイスであって、
相互に隣接する少なくとも2つの発光半導体素子(101,111)と、
前記少なくとも2つの発光半導体素子(101,111)のそれぞれを少なくとも部分的に包囲し、各発光半導体素子(101,111)から放出された光の波長領域を部分的にまたは完全に変換する変換物質を含む複数の包囲部材(102,112)と、
前記少なくとも2つの発光半導体素子(101,111)のあいだに配置されて各包囲部材(102,112)を光学的に分離する少なくとも1つの光学減衰素子(603)と
を有しており、
前記光学減衰素子(603)は、少なくとも1つの或る発光半導体素子(101)から放出された光の、少なくとも1つの別の発光半導体素子(111)の包囲部材(112)への入力、または、少なくとも1つの或る包囲部材(102)から放出された光の、少なくとも1つの別の包囲部材(112)への入力が低減されるように配置されており、
前記デバイスは、前記少なくとも2つの発光半導体素子(101,111)を保護する透光性カバー(602)を含み、
前記光学減衰素子(603)は、前記透光性カバー(602)の一部として形成されており、
前記光学減衰素子(603)は、前記透光性カバー(602)に接続されたケイ素条片であり、
前記ケイ素条片が、三角形状の断面を有し、かつ、各発光半導体素子が光学的に分離される位置にくさび形に形成される、
ことを特徴とするデバイス。 - 前記ケイ素条片は、前記複数の包囲部材を光学的に分離できる高さで構成されている、請求項6記載のデバイス。
- 前記透光性カバー(802)は、透光性材料から形成されている、
請求項1記載のデバイス。 - 前記透光性カバー(602,802)はレンズとして作用する領域を含む、請求項1から8までのいずれか1項記載のデバイス。
- 前記透光性カバー(602,802)は、ガラスカバーである、請求項1から9までのいずれか1項記載のデバイス。
- 前記発光半導体素子(101,111)は、セラミックから形成される支持体素子上に配置されている、請求項1から10までのいずれか1項記載のデバイス。
- 複数の前記光学減衰素子(603,801)と、それぞれ複数の前記包囲部材(112)を含む、複数列の前記発光半導体素子(101,111)とが設けられており、前記光学減衰素子(603,801)はそれぞれ前記発光半導体素子(101,111)の列間に配置されている、請求項1から11までのいずれか1項記載のデバイス。
- 前記デバイスは、それぞれ複数の前記包囲部材を含む、複数列の前記発光半導体素子を有しており、前記光学減衰素子(603,801)は格子状に構成されており、これにより、各発光半導体素子及び各包囲部材は、隣接する他の発光半導体素子及び他の包囲部材から光学的に分離されている、請求項1から11までのいずれか1項記載のデバイス。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007056925 | 2007-11-27 | ||
DE102007056925.6 | 2007-11-27 | ||
DE102008011153.8 | 2008-02-26 | ||
DE102008011153.8A DE102008011153B4 (de) | 2007-11-27 | 2008-02-26 | Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010535209A Division JP5575657B2 (ja) | 2007-11-27 | 2008-11-18 | 少なくとも2つの発光半導体素子を備えたデバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014207473A JP2014207473A (ja) | 2014-10-30 |
JP6012670B2 true JP6012670B2 (ja) | 2016-10-25 |
Family
ID=40577198
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010535209A Active JP5575657B2 (ja) | 2007-11-27 | 2008-11-18 | 少なくとも2つの発光半導体素子を備えたデバイスの製造方法 |
JP2014136894A Active JP6012670B2 (ja) | 2007-11-27 | 2014-07-02 | 少なくとも2つの発光半導体素子を備えたデバイス |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010535209A Active JP5575657B2 (ja) | 2007-11-27 | 2008-11-18 | 少なくとも2つの発光半導体素子を備えたデバイスの製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8426875B2 (ja) |
EP (1) | EP2215657B1 (ja) |
JP (2) | JP5575657B2 (ja) |
KR (1) | KR101511816B1 (ja) |
CN (1) | CN101874302A (ja) |
DE (1) | DE102008011153B4 (ja) |
WO (1) | WO2009067989A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008025923B4 (de) * | 2008-05-30 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102010025319B4 (de) * | 2010-06-28 | 2022-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente |
US8987022B2 (en) * | 2011-01-17 | 2015-03-24 | Samsung Electronics Co., Ltd. | Light-emitting device package and method of manufacturing the same |
DE102011003969B4 (de) | 2011-02-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102012105677B4 (de) * | 2012-06-28 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Leuchtdiodenmodul und Kfz-Scheinwerfer |
DE102012212963B4 (de) * | 2012-07-24 | 2022-09-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102012212968A1 (de) * | 2012-07-24 | 2014-01-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element |
DE102012113003A1 (de) | 2012-12-21 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
JP6186904B2 (ja) | 2013-06-05 | 2017-08-30 | 日亜化学工業株式会社 | 発光装置 |
DE102013213073A1 (de) * | 2013-07-04 | 2015-01-08 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelementes |
KR102222580B1 (ko) * | 2014-07-30 | 2021-03-05 | 삼성전자주식회사 | 발광 소자 패키지 및 이를 포함하는 표시 장치 |
DE102014116134A1 (de) * | 2014-11-05 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102017107226A1 (de) * | 2017-04-04 | 2018-10-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterbauelemente und strahlungsemittierendes Halbleiterbauelement |
DE102018111637A1 (de) * | 2018-01-26 | 2019-08-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement |
DE102018118251B4 (de) | 2018-07-27 | 2020-02-06 | Infineon Technologies Ag | Chipanordnung und Verfahren zur Herstellung derselben |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58190684U (ja) * | 1982-06-11 | 1983-12-17 | 三菱電機株式会社 | 表示パネル |
JPH087426Y2 (ja) * | 1988-09-30 | 1996-03-04 | アイシン精機株式会社 | 発光表示板の射光もれ防止装置 |
JPH11153970A (ja) * | 1997-11-19 | 1999-06-08 | Matsushita Electric Ind Co Ltd | 光漏れ防止装置 |
US6614103B1 (en) | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
JP2002211030A (ja) | 2001-01-17 | 2002-07-31 | Ricoh Co Ltd | Ledプリントヘッド及びその製造方法 |
CN100477210C (zh) * | 2001-09-13 | 2009-04-08 | 卢西雅股份公司 | 发光板和载板 |
EP1501909B1 (de) * | 2002-05-06 | 2008-02-27 | Osram Opto Semiconductors GmbH | Wellenlängenkonvertierende reaktionsharzmasse und leuchtdiodenbauelement |
JP2004319530A (ja) | 2003-02-28 | 2004-11-11 | Sanyo Electric Co Ltd | 光半導体装置およびその製造方法 |
JP2004303503A (ja) | 2003-03-31 | 2004-10-28 | Sanyo Electric Co Ltd | アルカリ二次電池の製造方法 |
JP2005187367A (ja) | 2003-12-25 | 2005-07-14 | Sumitomo Chemical Co Ltd | 殺菌剤組成物 |
JP4572312B2 (ja) | 2004-02-23 | 2010-11-04 | スタンレー電気株式会社 | Led及びその製造方法 |
DE102004021233A1 (de) | 2004-04-30 | 2005-12-01 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
EP1780592A4 (en) | 2004-06-30 | 2014-07-09 | Mitsubishi Chem Corp | LIGHT-EMITTING COMPONENT, BACKLIGHT UNIT, DISPLAY UNIT AND DISPLAY UNIT |
JP5081370B2 (ja) | 2004-08-31 | 2012-11-28 | 日亜化学工業株式会社 | 発光装置 |
JP2006114854A (ja) * | 2004-10-18 | 2006-04-27 | Sharp Corp | 半導体発光装置、液晶表示装置用のバックライト装置 |
KR100580753B1 (ko) | 2004-12-17 | 2006-05-15 | 엘지이노텍 주식회사 | 발광소자 패키지 |
ITRM20040633A1 (it) | 2004-12-23 | 2005-03-23 | St Microelectronics Srl | Trasmettitore ottico multi-sorgente e dispositivo di visualizzazione fotonico. |
JP4679183B2 (ja) * | 2005-03-07 | 2011-04-27 | シチズン電子株式会社 | 発光装置及び照明装置 |
KR100663906B1 (ko) | 2005-03-14 | 2007-01-02 | 서울반도체 주식회사 | 발광 장치 |
EP1891684A1 (en) | 2005-06-02 | 2008-02-27 | Philips Intellectual Property & Standards GmbH | Silicon deflector on a silicon submount for light emitting diodes |
JP2007005735A (ja) | 2005-06-27 | 2007-01-11 | Teikoku Tsushin Kogyo Co Ltd | 電子部品の封止構造及びその製造方法 |
JP5080758B2 (ja) * | 2005-10-07 | 2012-11-21 | 日立マクセル株式会社 | 半導体装置 |
JP2007201361A (ja) | 2006-01-30 | 2007-08-09 | Shinko Electric Ind Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP4861343B2 (ja) * | 2006-02-06 | 2012-01-25 | 京セミ株式会社 | 受光又は発光用半導体モジュール |
JP2007242856A (ja) | 2006-03-08 | 2007-09-20 | Rohm Co Ltd | チップ型半導体発光素子 |
CN100490195C (zh) | 2006-03-16 | 2009-05-20 | 先进开发光电股份有限公司 | 固态发光元件的封装结构和其制造方法 |
KR100875443B1 (ko) * | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | 발광 장치 |
KR20080022069A (ko) * | 2006-09-05 | 2008-03-10 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 프린트 배선 기판 |
US7564067B2 (en) * | 2007-03-29 | 2009-07-21 | Eastman Kodak Company | Device having spacers |
KR100891810B1 (ko) * | 2007-11-06 | 2009-04-07 | 삼성전기주식회사 | 백색 발광 소자 |
-
2008
- 2008-02-26 DE DE102008011153.8A patent/DE102008011153B4/de active Active
- 2008-11-18 WO PCT/DE2008/001902 patent/WO2009067989A1/de active Application Filing
- 2008-11-18 KR KR1020107014168A patent/KR101511816B1/ko active IP Right Grant
- 2008-11-18 CN CN200880117743A patent/CN101874302A/zh active Pending
- 2008-11-18 JP JP2010535209A patent/JP5575657B2/ja active Active
- 2008-11-18 EP EP08854905.0A patent/EP2215657B1/de active Active
- 2008-11-18 US US12/745,249 patent/US8426875B2/en active Active
-
2014
- 2014-07-02 JP JP2014136894A patent/JP6012670B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
DE102008011153A1 (de) | 2009-05-28 |
US20110186867A1 (en) | 2011-08-04 |
KR20100105631A (ko) | 2010-09-29 |
EP2215657A1 (de) | 2010-08-11 |
JP5575657B2 (ja) | 2014-08-20 |
DE102008011153B4 (de) | 2023-02-02 |
WO2009067989A1 (de) | 2009-06-04 |
JP2014207473A (ja) | 2014-10-30 |
EP2215657B1 (de) | 2013-07-10 |
KR101511816B1 (ko) | 2015-04-17 |
CN101874302A (zh) | 2010-10-27 |
US8426875B2 (en) | 2013-04-23 |
JP2011505071A (ja) | 2011-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6012670B2 (ja) | 少なくとも2つの発光半導体素子を備えたデバイス | |
JP6599295B2 (ja) | 斜角反射体を備えた発光素子およびその製造方法 | |
US9882097B2 (en) | Optoelectronic semiconductor chip, optoelectronic semiconductor component, and a method for producing an optoelectronic semiconductor component | |
JP5611492B1 (ja) | Led装置及びその製造方法 | |
JP4259198B2 (ja) | 発光装置用波長変換部の製造方法及び発光装置の製造方法 | |
JP5618481B2 (ja) | 表面実装可能なオプトエレクトロニクス素子及び表面実装可能なオプトエレクトロニクス素子の製造方法 | |
KR101433423B1 (ko) | 광전 소자들의 제조 방법 및 광전 소자 | |
TWI389328B (zh) | 光電半導體構件及其製造方法 | |
JP6099764B2 (ja) | オプトエレクトロニクス半導体部品を製造する方法およびオプトエレクトロニクス半導体部品 | |
US8624280B2 (en) | Light emitting device package and method for fabricating the same | |
CN108365075B (zh) | 具有斜面晶片反射结构的晶片级封装发光装置及其制造方法 | |
TWI531091B (zh) | 發光二極體封裝結構及其封裝方法 | |
KR20130079501A (ko) | 적어도 하나의 광전자 반도체 소자를 제조하기 위한 방법 | |
JP2018518059A (ja) | 発光ダイオード装置および該発光ダイオード装置を製造するための方法 | |
KR20140026163A (ko) | 반도체 소자 구조물을 제조하는 방법 | |
CN106688096B (zh) | 光电子构件 | |
JP2019518331A (ja) | オプトエレクトロニクスデバイスを製造する方法およびオプトエレクトロニクスデバイス | |
KR102519814B1 (ko) | 높은 근거리 콘트라스트 비를 갖는 led 모듈 | |
JP5996328B2 (ja) | 半導体デバイス | |
WO2014162650A1 (ja) | 発光装置 | |
KR101299563B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
KR20140026167A (ko) | 반도체 소자 구조물을 제조하는 방법 | |
KR101299562B1 (ko) | 반도체 소자 구조물 | |
KR101300463B1 (ko) | 반도체 소자 구조물을 제조하는 방법 | |
JP2018006704A (ja) | 発光装置および照明装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150415 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150519 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150819 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160509 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160720 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160905 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160920 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6012670 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |