KR101511816B1 - 적어도 두 개의 발광 반도체 소자를 포함한 장치 및 그러한 장치의 제조 방법 - Google Patents

적어도 두 개의 발광 반도체 소자를 포함한 장치 및 그러한 장치의 제조 방법 Download PDF

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KR101511816B1
KR101511816B1 KR1020107014168A KR20107014168A KR101511816B1 KR 101511816 B1 KR101511816 B1 KR 101511816B1 KR 1020107014168 A KR1020107014168 A KR 1020107014168A KR 20107014168 A KR20107014168 A KR 20107014168A KR 101511816 B1 KR101511816 B1 KR 101511816B1
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light emitting
emitting semiconductor
semiconductor elements
damping element
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KR20100105631A (ko
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프랭크 싱어
토마스 제일러
조아침 레일
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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KR1020107014168A 2007-11-27 2008-11-18 적어도 두 개의 발광 반도체 소자를 포함한 장치 및 그러한 장치의 제조 방법 Active KR101511816B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007056925 2007-11-27
DE102007056925.6 2007-11-27
DE102008011153.8A DE102008011153B4 (de) 2007-11-27 2008-02-26 Verfahren zur Herstellung einer Anordnung mit mindestens zwei lichtemittierenden Halbleiterbauelementen
DE102008011153.8 2008-02-26
PCT/DE2008/001902 WO2009067989A1 (de) 2007-11-27 2008-11-18 Anordnung mit mindestens zwei lichtemittierenden halbleiterbauelementen und verfahren zur herstellung einer solchen anordnung

Publications (2)

Publication Number Publication Date
KR20100105631A KR20100105631A (ko) 2010-09-29
KR101511816B1 true KR101511816B1 (ko) 2015-04-17

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Country Status (7)

Country Link
US (1) US8426875B2 (enExample)
EP (1) EP2215657B1 (enExample)
JP (2) JP5575657B2 (enExample)
KR (1) KR101511816B1 (enExample)
CN (1) CN101874302A (enExample)
DE (1) DE102008011153B4 (enExample)
WO (1) WO2009067989A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102010025319B4 (de) * 2010-06-28 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines oberflächenmontierbaren Halbleiterbauelements und oberflächenmontierbare Halbleiterbauelemente
US8987022B2 (en) * 2011-01-17 2015-03-24 Samsung Electronics Co., Ltd. Light-emitting device package and method of manufacturing the same
DE102011003969B4 (de) * 2011-02-11 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012105677B4 (de) 2012-06-28 2016-06-09 Osram Opto Semiconductors Gmbh Leuchtdiodenmodul und Kfz-Scheinwerfer
DE102012212968A1 (de) * 2012-07-24 2014-01-30 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil mit elektrisch isolierendem element
DE102012212963B4 (de) 2012-07-24 2022-09-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102012113003A1 (de) 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
JP6186904B2 (ja) 2013-06-05 2017-08-30 日亜化学工業株式会社 発光装置
DE102013213073A1 (de) * 2013-07-04 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelementes
KR102222580B1 (ko) * 2014-07-30 2021-03-05 삼성전자주식회사 발광 소자 패키지 및 이를 포함하는 표시 장치
DE102014116134A1 (de) 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102017107226A1 (de) * 2017-04-04 2018-10-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl strahlungsemittierender Halbleiterbauelemente und strahlungsemittierendes Halbleiterbauelement
DE102018111637A1 (de) 2018-01-26 2019-08-01 Osram Opto Semiconductors Gmbh Optoelektronischer halbleiterchip, verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement
DE102018118251B4 (de) 2018-07-27 2020-02-06 Infineon Technologies Ag Chipanordnung und Verfahren zur Herstellung derselben

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060197098A1 (en) 2005-03-07 2006-09-07 Citizen Electronics Co. Ltd. Light emitting device and illumination apparatus using said light emitting device
US20070166853A1 (en) 2004-04-30 2007-07-19 Guenther Ewald K M LED Arrangement

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58190684U (ja) * 1982-06-11 1983-12-17 三菱電機株式会社 表示パネル
JPH087426Y2 (ja) * 1988-09-30 1996-03-04 アイシン精機株式会社 発光表示板の射光もれ防止装置
JPH11153970A (ja) * 1997-11-19 1999-06-08 Matsushita Electric Ind Co Ltd 光漏れ防止装置
US6614103B1 (en) 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP2002211030A (ja) 2001-01-17 2002-07-31 Ricoh Co Ltd Ｌｅｄプリントヘッド及びその製造方法
DE50209685D1 (de) * 2001-09-13 2007-04-19 Lucea Ag Leuchtdioden-leuchtpaneel und leiterplatte
JP2005524737A (ja) * 2002-05-06 2005-08-18 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング 波長変換する反応性樹脂材料及び発光ダイオード素子
JP2004319530A (ja) 2003-02-28 2004-11-11 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP2004303503A (ja) 2003-03-31 2004-10-28 Sanyo Electric Co Ltd アルカリ二次電池の製造方法
JP2005187367A (ja) 2003-12-25 2005-07-14 Sumitomo Chemical Co Ltd 殺菌剤組成物
JP4572312B2 (ja) * 2004-02-23 2010-11-04 スタンレー電気株式会社 Ｌｅｄ及びその製造方法
US7737623B2 (en) * 2004-06-30 2010-06-15 Mitsubishi Chemical Corporation Light emitting device, lighting system, backlight unit for display device, and display device
JP5081370B2 (ja) 2004-08-31 2012-11-28 日亜化学工業株式会社 発光装置
JP2006114854A (ja) 2004-10-18 2006-04-27 Sharp Corp 半導体発光装置、液晶表示装置用のバックライト装置
KR100580753B1 (ko) 2004-12-17 2006-05-15 엘지이노텍 주식회사 발광소자 패키지
ITRM20040633A1 (it) 2004-12-23 2005-03-23 St Microelectronics Srl Trasmettitore ottico multi-sorgente e dispositivo di visualizzazione fotonico.
KR100663906B1 (ko) 2005-03-14 2007-01-02 서울반도체 주식회사 발광 장치
US20080179613A1 (en) 2005-06-02 2008-07-31 Koninklijke Philips Electronics, N.V. Silicon Deflector on a Silicon Submount For Light Emitting Diodes
JP2007005735A (ja) 2005-06-27 2007-01-11 Teikoku Tsushin Kogyo Co Ltd 電子部品の封止構造及びその製造方法
JP5080758B2 (ja) 2005-10-07 2012-11-21 日立マクセル株式会社 半導体装置
JP2007201361A (ja) 2006-01-30 2007-08-09 Shinko Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
AU2006337843B2 (en) * 2006-02-06 2011-06-23 Sphelar Power Corporation Light receiving or emitting semiconductor module
JP2007242856A (ja) 2006-03-08 2007-09-20 Rohm Co Ltd チップ型半導体発光素子
CN100490195C (zh) 2006-03-16 2009-05-20 先进开发光电股份有限公司 固态发光元件的封装结构和其制造方法
KR100875443B1 (ko) 2006-03-31 2008-12-23 서울반도체 주식회사 발광 장치
CN101141848A (zh) * 2006-09-05 2008-03-12 三井金属矿业株式会社 印刷电路板
US7564067B2 (en) * 2007-03-29 2009-07-21 Eastman Kodak Company Device having spacers
KR100891810B1 (ko) * 2007-11-06 2009-04-07 삼성전기주식회사 백색 발광 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070166853A1 (en) 2004-04-30 2007-07-19 Guenther Ewald K M LED Arrangement
US20060197098A1 (en) 2005-03-07 2006-09-07 Citizen Electronics Co. Ltd. Light emitting device and illumination apparatus using said light emitting device

Also Published As

Publication number Publication date
EP2215657A1 (de) 2010-08-11
US20110186867A1 (en) 2011-08-04
DE102008011153A1 (de) 2009-05-28
DE102008011153B4 (de) 2023-02-02
JP2014207473A (ja) 2014-10-30
JP2011505071A (ja) 2011-02-17
EP2215657B1 (de) 2013-07-10
KR20100105631A (ko) 2010-09-29
WO2009067989A1 (de) 2009-06-04
CN101874302A (zh) 2010-10-27
JP5575657B2 (ja) 2014-08-20
US8426875B2 (en) 2013-04-23
JP6012670B2 (ja) 2016-10-25

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