JP5561380B2 - 半導体装置の内部配線構造 - Google Patents
半導体装置の内部配線構造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 239000004020 conductor Substances 0.000 claims description 172
- 239000002184 metal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 239000011888 foil Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 11
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
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- 230000035699 permeability Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
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Description
M=(μT/2π)×(log(2T/d)−(3/4))
但し、Tは配線導体の長さ、aは配線導体(断面が円形の場合)の半径(図9では断面積を等価円に換算しその半径)、μは配線導体の誘磁率、dは配線導体の中心軸間隔である。
また、特許文献1では、従来の単体の直線状の配線導体に対し、単体の配線導体の側面にスリット(切り込み)を形成することにより、単体の配線導体を流れる電流を蛇行させて単体の配線導体の高周波抵抗分を大きくし、放射ノイズの低減効果を増大させるようにする。この構造とすることで、回路や装置を特に大型化することなく、IGBTなどの半導体素子(半導体チップ)のスイッチングによる放射ノイズを低減できる。また、スリットの他に、表皮効果を利用する別の例なども記載されている。
また、特許文献2では、図10に示すように、絶縁板71の第1の主面に金属箔である裏面導電膜72が形成され、絶縁板71の第2の主面に、少なくとも一つの別の金属箔である導電パターン73が形成されたパワー半導体モジュール600が開示されている。また、別の金属箔上に接合された(少なくとも一つの)半導体素子である半導体チップ74と、半導体素子が配置された絶縁板71の主面に対向するようにプリント基板75が配置される。そして、プリント基板75の第1の主面(表側)に形成された配線導体76である金属箔またはプリント基板75の第2の主面(裏側)に形成された別の配線導体77である金属箔と、半導体素子の主電極とが複数のポスト電極78により電気的に接続される。配線導体76,77を同一方向に電流が流れる2層の金属箔とすることで、接触信頼性を高めて、優れた動作特性を有し、且つ高い生産性を有する半導体装置が実現できることが記載されている。
また、請求の範囲の第3項記載の発明によれば、第1項に記載の発明において、前記第1の切り込み同士の間の間隔が等しく、前記第1の切り込みの底端部とこれと対向する前記第1配線導体の側壁の間の間隔が前記第1の切り込み同士の間の間隔に等しいとよい。
本発明の上記および他の目的、特徴および利点は本発明の例として好ましい実施の形態を表す添付の図面と関連した以下の説明により明らかになるであろう。
尚、電流I1,I2は入力部11a,11bから流入し出力部12a,12bから流出する。また、平板1a,1bに切り込み7a,7bを形成することで、電流I1,I2は蛇行して流れるようになる。また、切り込み7a,7bは箇所8a,8bで側壁2a,2bにそれぞれ接する。
また、第1、第2配線導体4a,4bを大きな平板から第1、第2平板1a,1bの段階を経ないで直接打ち出しにより形成する場合もある。
また、図5には計算に用いた諸元を示す。図5の切り込みのパターンは図4の切り込みのパターンに相当する。配線導体の材料は鋼材、配線長さTが5mm、配線幅W1が1mm、配線厚さW2が0.18mmである場合である。また、対向する配線導体の隙間tは0.05mmであり、切り込みの幅Sは0.2mmであり、切り込みの長さTsは3mmであり、切り込みが重なって空洞となる箇所(接続導体がない箇所)の長さTs1は2mmである。
1b 第2平板
2a,2b 第1平板の対向する側壁
3a,3b 第2平板の対向する側壁
4a,76a 第1配線導体
4b,77a 第2配線導体
5a,5b 直線
6a,6b,29a,29b 中央点
7a,7b,30a,30b 切り込み
8a,8b 箇所
9a,9b 底部
10a 第1箇所
10b 第2箇所
11a,11b,IN1,IN2 入力部
12a,12b,OUT1,OUT2 出力部
71 絶縁板
72 裏面導電膜
73 導電パターン
74 半導体チップ
75 プリント基板
78 ポスト電極
100,200,300 本発明の電力用半導体装置
I1,31a 第1配線導体に流れる電流
I2,31b 第2配線導体に流れる電流
T 配線導体の長さ
W1 配線導体の幅
W2 配線導体の厚さ
t 第1配線導体と第2配線導体の間の隙間
S 切り込みの幅
Ts 切り込みの長さ
Ts1 切り込みが重なった箇所の長さ
Claims (3)
- ケース内に対向して平行に配置され、入力部から出力部に向かう方向が同じである第1配線導体および第2配線導体を有する半導体装置の内部配線構造において、
前記第1配線導体と前記第2配線導体がそれぞれ平板から形成され、
前記第1配線導体には、互いに対向する側壁の一方から他方に向かって平行に延びる複数の直線に沿って両側壁間の第1の中央点を超えて一方の側壁から他方の側壁へまたは他方の側壁から一方の側壁へ向かって交互に第1の切り込みが入れられ、
前記第2配線導体には、前記複数の直線直下に前記第1の切り込みが入れられる側とは反対側の側壁から両側壁間の第2の中央点を超えるようにして、一方の側壁から他方の側壁へまたは他方の側壁から一方の側壁へ向かって交互に第2の切り込みが入れられ、
前記第1の切り込みの長さと該第1の切り込み直下の前記第2の切り込みの長さが等しく、前記第1の中央点と前記第2の中央点とが互いに重なり、前記第1の切り込みと前記第2の切り込みが部分的に互いに重なり、前記第1の切り込みに沿って前記第1配線導体を流れる電流の向きと前記第2の切り込みに沿って前記第2配線導体を流れる電流の向きが互いに逆向きになり、前記第1配線導体と前記第2配線導体の間の相互インダクタンスが小さくなることを特徴とする半導体装置の内部配線構造。 - 前記第1配線導体と前記第2配線導体を絶縁板の表側および裏側にそれぞれ形成することを特徴とする請求の範囲第1項に記載の半導体装置の内部配線構造。
- 前記第1の切り込み同士の間の間隔が等しく、前記第1の切り込みの底端部とこれと対向する前記第1配線導体の側壁の間の間隔が前記第1の切り込み同士の間の間隔に等しいことを特徴とする請求の範囲第1項に記載の半導体装置の内部配線構造。
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EP2908338A4 (en) * | 2012-10-15 | 2016-07-13 | Fuji Electric Co Ltd | SEMICONDUCTOR COMPONENT |
DE112013005355B4 (de) * | 2012-11-09 | 2023-06-07 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
JP5924456B2 (ja) * | 2013-09-06 | 2016-05-25 | 株式会社村田製作所 | 多層基板 |
US9655265B2 (en) * | 2014-05-26 | 2017-05-16 | Infineon Technologies Ag | Electronic module |
CN105992505B (zh) * | 2015-03-24 | 2018-06-12 | 杭州迪普科技股份有限公司 | 网络设备 |
CN108598258B (zh) * | 2018-04-27 | 2021-11-09 | 华南师范大学 | 一种具有静态负微分电阻特性的太赫兹器件 |
JP2022108967A (ja) | 2021-01-14 | 2022-07-27 | 富士電機株式会社 | スナバ装置および電力変換装置 |
CN116864494B (zh) * | 2023-09-01 | 2023-12-05 | 甬矽电子(宁波)股份有限公司 | 扇出型封装结构和扇出型封装结构制作方法 |
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JP3695260B2 (ja) | 1999-11-04 | 2005-09-14 | 株式会社日立製作所 | 半導体モジュール |
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JPH0521674A (ja) * | 1991-07-10 | 1993-01-29 | Mitsubishi Electric Corp | 半導体装置 |
JPH05120928A (ja) * | 1991-10-25 | 1993-05-18 | Sumitomo Wiring Syst Ltd | フラツト回路体 |
JPH0819267A (ja) * | 1994-06-27 | 1996-01-19 | Okuma Mach Works Ltd | インバータ制御装置 |
JP2005166983A (ja) * | 2003-12-03 | 2005-06-23 | Nissan Motor Co Ltd | 半導体装置の実装構造 |
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WO2012111397A1 (ja) | 2012-08-23 |
US20130277849A1 (en) | 2013-10-24 |
CN103155147B (zh) | 2016-02-10 |
DE112012000149T5 (de) | 2013-07-25 |
DE112012000149B4 (de) | 2022-02-24 |
CN103155147A (zh) | 2013-06-12 |
US8710674B2 (en) | 2014-04-29 |
JPWO2012111397A1 (ja) | 2014-07-03 |
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