JP5177174B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5177174B2 JP5177174B2 JP2010118257A JP2010118257A JP5177174B2 JP 5177174 B2 JP5177174 B2 JP 5177174B2 JP 2010118257 A JP2010118257 A JP 2010118257A JP 2010118257 A JP2010118257 A JP 2010118257A JP 5177174 B2 JP5177174 B2 JP 5177174B2
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- semiconductor device
- main electrode
- electrode terminal
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- 239000004065 semiconductor Substances 0.000 title claims description 93
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000011347 resin Substances 0.000 description 22
- 229920005989 resin Polymers 0.000 description 22
- 239000007787 solid Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 238000010992 reflux Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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Description
図1乃至図5を参照して本発明の実施の形態1を説明する。なお、同一又は対応する構成要素には同一の符号を付して複数回の説明を省略する場合がある。他の実施形態でも同様である。
図6乃至図8を参照して本発明の実施の形態2を説明する。図6は本発明の実施の形態2に係る半導体装置の平面図である。半導体装置60はP側主電極端子に狭幅部を備えることが特徴である。半導体装置60は2つの並列回路を備え、本発明の実施の形態1に係る半導体装置10の構成と類似点が多いので半導体装置10との相違点のみ説明する。
Claims (2)
- 第1部分と、第2部分と、前記第1部分と前記第2部分の間に前記第1部分と前記第2部分よりも幅が狭くなるように形成された狭幅部とを有する配線金属板と、
外部端子接続部を有する第1主電極端子と、
第2主電極端子と、
前記第1主電極端子と前記第1部分を接続する第1ワイヤと、
表面電極と裏面電極を有し、前記裏面電極が前記第2部分に固着された複数のパワー半導体素子と、
前記第2主電極端子と前記表面電極を接続する第2ワイヤとを備え、
前記外部端子接続部から前記複数のパワー半導体素子までの電流経路長は均等でなく、
前記狭幅部から前記複数のパワー半導体素子までの電流経路長は均等であることを特徴とする半導体装置。 - 配線金属板と、
第1部分と、第2部分と、前記第1部分と隣接した外部端子接続部と、前記第1部分と前記第2部分の間に前記第1部分と前記第2部分よりも幅が狭くなるように形成された狭幅部とを有する第1主電極端子と、
第2主電極端子と、
表面電極と裏面電極を有し、前記裏面電極が前記配線金属板に固着された複数のパワー半導体素子と、
前記第2部分と前記配線金属板を接続する第1ワイヤと、
前記第2主電極端子と前記表面電極を接続する第2ワイヤとを備え、
前記外部端子接続部は前記第1主電極端子の中央を避けて形成され、
前記狭幅部から前記複数のパワー半導体素子までの電流経路長は均等であることを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010118257A JP5177174B2 (ja) | 2010-05-24 | 2010-05-24 | 半導体装置 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010118257A JP5177174B2 (ja) | 2010-05-24 | 2010-05-24 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2013001634A Division JP5429413B2 (ja) | 2013-01-09 | 2013-01-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011249394A JP2011249394A (ja) | 2011-12-08 |
JP5177174B2 true JP5177174B2 (ja) | 2013-04-03 |
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JP2010118257A Active JP5177174B2 (ja) | 2010-05-24 | 2010-05-24 | 半導体装置 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11177190B2 (en) | 2018-06-06 | 2021-11-16 | Fuji Electric Co., Ltd. | Semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7305603B2 (ja) * | 2020-09-18 | 2023-07-10 | 株式会社東芝 | 半導体装置 |
CN113707643A (zh) * | 2021-08-30 | 2021-11-26 | 中国振华集团永光电子有限公司(国营第八七三厂) | 一种高集成高可靠igbt功率模块及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05347377A (ja) * | 1992-06-16 | 1993-12-27 | Fuji Electric Co Ltd | 半導体装置 |
JP3222341B2 (ja) * | 1995-01-11 | 2001-10-29 | 株式会社日立製作所 | 半導体モジュール |
JP2001094035A (ja) * | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置 |
JP5136343B2 (ja) * | 2008-10-02 | 2013-02-06 | 三菱電機株式会社 | 半導体装置 |
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- 2010-05-24 JP JP2010118257A patent/JP5177174B2/ja active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11177190B2 (en) | 2018-06-06 | 2021-11-16 | Fuji Electric Co., Ltd. | Semiconductor device |
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JP2011249394A (ja) | 2011-12-08 |
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