JP5535490B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5535490B2
JP5535490B2 JP2009020255A JP2009020255A JP5535490B2 JP 5535490 B2 JP5535490 B2 JP 5535490B2 JP 2009020255 A JP2009020255 A JP 2009020255A JP 2009020255 A JP2009020255 A JP 2009020255A JP 5535490 B2 JP5535490 B2 JP 5535490B2
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JP
Japan
Prior art keywords
semiconductor chip
guard ring
electrode pad
outer periphery
electrode
Prior art date
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Active
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JP2009020255A
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English (en)
Japanese (ja)
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JP2010177550A5 (enExample
JP2010177550A (ja
Inventor
武司 菱田
勉 五十嵐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Publication date
Application filed by Sumitomo Electric Device Innovations Inc filed Critical Sumitomo Electric Device Innovations Inc
Priority to JP2009020255A priority Critical patent/JP5535490B2/ja
Priority to US12/690,973 priority patent/US8461667B2/en
Publication of JP2010177550A publication Critical patent/JP2010177550A/ja
Publication of JP2010177550A5 publication Critical patent/JP2010177550A5/ja
Application granted granted Critical
Publication of JP5535490B2 publication Critical patent/JP5535490B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/564—Details not otherwise provided for, e.g. protection against moisture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009020255A 2009-01-30 2009-01-30 半導体装置 Active JP5535490B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009020255A JP5535490B2 (ja) 2009-01-30 2009-01-30 半導体装置
US12/690,973 US8461667B2 (en) 2009-01-30 2010-01-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009020255A JP5535490B2 (ja) 2009-01-30 2009-01-30 半導体装置

Publications (3)

Publication Number Publication Date
JP2010177550A JP2010177550A (ja) 2010-08-12
JP2010177550A5 JP2010177550A5 (enExample) 2012-03-15
JP5535490B2 true JP5535490B2 (ja) 2014-07-02

Family

ID=42396991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009020255A Active JP5535490B2 (ja) 2009-01-30 2009-01-30 半導体装置

Country Status (2)

Country Link
US (1) US8461667B2 (enExample)
JP (1) JP5535490B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5535490B2 (ja) * 2009-01-30 2014-07-02 住友電工デバイス・イノベーション株式会社 半導体装置
IT1397222B1 (it) 2009-12-30 2013-01-04 St Microelectronics Srl Metodo per controllare il corretto posizionamento di sonde di test su terminazioni di dispositivi elettronici integrati su semiconduttore e relativo dispositivo elettronico.
JP5607096B2 (ja) * 2012-03-23 2014-10-15 株式会社東芝 窒化物半導体装置
CN102832178A (zh) * 2012-09-18 2012-12-19 上海工程技术大学 一种用于集成电路芯片的密封环结构
CN103633046B (zh) * 2013-12-13 2017-03-15 苏州能讯高能半导体有限公司 半导体器件及其制造方法
JP6478395B2 (ja) * 2015-03-06 2019-03-06 住友電工デバイス・イノベーション株式会社 半導体装置
JP7380310B2 (ja) 2019-02-28 2023-11-15 住友電工デバイス・イノベーション株式会社 電界効果トランジスタ及び半導体装置
CN116097447A (zh) * 2020-09-01 2023-05-09 电力集成公司 包括二维电子气区域的管芯密封环
JP7626861B2 (ja) * 2020-12-31 2025-02-04 蘇州能訊高能半導体有限公司 半導体デバイス及びその作製方法
CN114695545A (zh) * 2020-12-31 2022-07-01 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
CN114695512A (zh) * 2020-12-31 2022-07-01 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法
JP2025036097A (ja) * 2023-08-31 2025-03-14 キヤノン株式会社 発光デバイス
CN120379304B (zh) * 2025-06-26 2025-10-24 厦门市三安集成电路有限公司 一种半导体芯片及制作方法、应用

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US6492716B1 (en) * 2001-04-30 2002-12-10 Zeevo, Inc. Seal ring structure for IC containing integrated digital/RF/analog circuits and functions
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JP3538170B2 (ja) * 2001-09-11 2004-06-14 松下電器産業株式会社 半導体装置及びその製造方法
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JP4303547B2 (ja) * 2003-01-30 2009-07-29 Ｎｅｃエレクトロニクス株式会社 半導体装置
JP4502173B2 (ja) * 2003-02-03 2010-07-14 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
JP4519411B2 (ja) * 2003-04-01 2010-08-04 ルネサスエレクトロニクス株式会社 半導体装置
US6940131B2 (en) * 2003-06-30 2005-09-06 Texas Instruments Incorporated MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication
US20050063431A1 (en) * 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
TWI221655B (en) * 2003-11-25 2004-10-01 Airoha Tech Corp Integrated circuit chip
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JP4564362B2 (ja) * 2004-01-23 2010-10-20 株式会社東芝 半導体装置
JP4757449B2 (ja) * 2004-01-29 2011-08-24 三菱電機株式会社 半導体装置
US7777338B2 (en) * 2004-09-13 2010-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring structure for integrated circuit chips
US7098521B2 (en) * 2004-10-01 2006-08-29 International Business Machines Corporation Reduced guard ring in schottky barrier diode structure
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JP4675159B2 (ja) * 2005-05-26 2011-04-20 パナソニック株式会社 半導体装置
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JP4945594B2 (ja) * 2009-03-16 2012-06-06 株式会社東芝 電力用半導体装置

Also Published As

Publication number Publication date
JP2010177550A (ja) 2010-08-12
US20100193894A1 (en) 2010-08-05
US8461667B2 (en) 2013-06-11

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