JP5530608B2 - 発光素子および発光装置 - Google Patents

発光素子および発光装置 Download PDF

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JP5530608B2
JP5530608B2 JP2008226584A JP2008226584A JP5530608B2 JP 5530608 B2 JP5530608 B2 JP 5530608B2 JP 2008226584 A JP2008226584 A JP 2008226584A JP 2008226584 A JP2008226584 A JP 2008226584A JP 5530608 B2 JP5530608 B2 JP 5530608B2
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layer
organic compound
light
electrode
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JP2009088491A5 (enExample
JP2009088491A (ja
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恒徳 鈴木
智子 下垣
哲史 瀬尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70—Testing, e.g. accelerated lifetime tests
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008226584A 2007-09-13 2008-09-04 発光素子および発光装置 Active JP5530608B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008226584A JP5530608B2 (ja) 2007-09-13 2008-09-04 発光素子および発光装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007237910 2007-09-13
JP2007237910 2007-09-13
JP2008226584A JP5530608B2 (ja) 2007-09-13 2008-09-04 発光素子および発光装置

Related Child Applications (1)

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JP2014025541A Division JP6008887B2 (ja) 2007-09-13 2014-02-13 発光素子

Publications (3)

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JP2009088491A JP2009088491A (ja) 2009-04-23
JP2009088491A5 JP2009088491A5 (enExample) 2011-08-18
JP5530608B2 true JP5530608B2 (ja) 2014-06-25

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JP2008226584A Active JP5530608B2 (ja) 2007-09-13 2008-09-04 発光素子および発光装置
JP2014025541A Expired - Fee Related JP6008887B2 (ja) 2007-09-13 2014-02-13 発光素子
JP2015098973A Withdrawn JP2015179860A (ja) 2007-09-13 2015-05-14 発光素子および発光装置
JP2016246547A Expired - Fee Related JP6370871B2 (ja) 2007-09-13 2016-12-20 発光装置

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JP2015098973A Withdrawn JP2015179860A (ja) 2007-09-13 2015-05-14 発光素子および発光装置
JP2016246547A Expired - Fee Related JP6370871B2 (ja) 2007-09-13 2016-12-20 発光装置

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US (2) US9269906B2 (enExample)
JP (4) JP5530608B2 (enExample)
KR (2) KR101663000B1 (enExample)

Families Citing this family (39)

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JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
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JP5530608B2 (ja) * 2007-09-13 2014-06-25 株式会社半導体エネルギー研究所 発光素子および発光装置
US8384283B2 (en) * 2007-09-20 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
TWI481308B (zh) 2007-09-27 2015-04-11 Semiconductor Energy Lab 發光元件，發光裝置，與電子設備
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KR102077141B1 (ko) * 2013-05-29 2020-02-14 삼성디스플레이 주식회사 유기 발광 소자
KR20140140417A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기 발광 소자
KR102255197B1 (ko) * 2014-05-02 2021-05-25 삼성디스플레이 주식회사 유기 발광 소자
KR102293727B1 (ko) * 2014-05-02 2021-08-27 삼성디스플레이 주식회사 유기 발광 소자
KR102244071B1 (ko) * 2014-05-02 2021-04-26 삼성디스플레이 주식회사 유기 발광 소자
KR102288347B1 (ko) * 2014-05-02 2021-08-11 삼성디스플레이 주식회사 유기 발광 소자
KR102253442B1 (ko) * 2014-05-13 2021-05-20 삼성디스플레이 주식회사 유기 발광 소자
KR102253443B1 (ko) * 2014-05-13 2021-05-20 삼성디스플레이 주식회사 유기 발광 소자
KR102504123B1 (ko) * 2015-04-14 2023-03-02 삼성디스플레이 주식회사 유기 발광 소자
KR102623039B1 (ko) 2015-05-15 2024-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기 및 조명 장치
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KR102574052B1 (ko) 2015-11-19 2023-09-04 엘지디스플레이 주식회사 유기발광 표시장치
CN106784343B (zh) 2015-11-19 2018-10-09 乐金显示有限公司 有机发光显示装置
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KR102572134B1 (ko) * 2018-07-24 2023-08-28 삼성전자주식회사 양자점 소자와 표시 장치
KR102227968B1 (ko) * 2018-08-28 2021-03-15 주식회사 엘지화학 유기 발광 소자
JP7190729B2 (ja) * 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
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JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
JP7410596B2 (ja) 2020-06-23 2024-01-10 三国電子有限会社 エレクトロルミネセンス素子の製造方法、エレクトロルミネセンス素子、および表示装置
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US9269906B2 (en) 2016-02-23
US20090072725A1 (en) 2009-03-19
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KR20090028420A (ko) 2009-03-18
JP6370871B2 (ja) 2018-08-08

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