KR101663000B1 - 발광소자 및 발광장치 - Google Patents

발광소자 및 발광장치 Download PDF

Info

Publication number
KR101663000B1
KR101663000B1 KR1020080088095A KR20080088095A KR101663000B1 KR 101663000 B1 KR101663000 B1 KR 101663000B1 KR 1020080088095 A KR1020080088095 A KR 1020080088095A KR 20080088095 A KR20080088095 A KR 20080088095A KR 101663000 B1 KR101663000 B1 KR 101663000B1
Authority
KR
South Korea
Prior art keywords
layer
organic compound
light emitting
electrode
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020080088095A
Other languages
English (en)
Korean (ko)
Other versions
KR20090028420A (ko
Inventor
츠네노리 스즈키
사토코 시타가키
사토시 세오
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20090028420A publication Critical patent/KR20090028420A/ko
Application granted granted Critical
Publication of KR101663000B1 publication Critical patent/KR101663000B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/70—Testing, e.g. accelerated lifetime tests
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/20—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the material in which the electroluminescent material is embedded
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020080088095A 2007-09-13 2008-09-08 발광소자 및 발광장치 Active KR101663000B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007237910 2007-09-13
JPJP-P-2007-00237910 2007-09-13

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020160124682A Division KR20160119008A (ko) 2007-09-13 2016-09-28 발광소자 및 발광장치

Publications (2)

Publication Number Publication Date
KR20090028420A KR20090028420A (ko) 2009-03-18
KR101663000B1 true KR101663000B1 (ko) 2016-10-06

Family

ID=40453730

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020080088095A Active KR101663000B1 (ko) 2007-09-13 2008-09-08 발광소자 및 발광장치
KR1020160124682A Ceased KR20160119008A (ko) 2007-09-13 2016-09-28 발광소자 및 발광장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020160124682A Ceased KR20160119008A (ko) 2007-09-13 2016-09-28 발광소자 및 발광장치

Country Status (3)

Country Link
US (2) US9269906B2 (enExample)
JP (4) JP5530608B2 (enExample)
KR (2) KR101663000B1 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
WO2007029530A1 (en) * 2005-09-02 2007-03-15 Semiconductor Energy Laboratory Co., Ltd. Anthracene derivative
EP1876658A3 (en) 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7902742B2 (en) * 2006-07-04 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
WO2008038607A1 (en) 2006-09-28 2008-04-03 Semiconductor Energy Laboratory Co., Ltd. Anthracene derivative, and light emitting element, light emitting device, and electronic device using the anthracene derivative
JP5530608B2 (ja) * 2007-09-13 2014-06-25 株式会社半導体エネルギー研究所 発光素子および発光装置
US8384283B2 (en) * 2007-09-20 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
TWI481308B (zh) 2007-09-27 2015-04-11 Semiconductor Energy Lab 發光元件，發光裝置，與電子設備
WO2009116605A1 (en) 2008-03-18 2009-09-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
WO2009116547A1 (en) 2008-03-18 2009-09-24 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
CN101752514B (zh) * 2008-12-17 2015-11-25 株式会社半导体能源研究所 发光元件、照明装置、发光装置以及电子设备
US9273079B2 (en) 2011-06-29 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Organometallic complex, light-emitting element, light-emitting device, electronic device, and lighting device
CN103765623B (zh) * 2011-08-22 2016-06-01 默克专利有限公司 有机电致发光器件
US9741946B2 (en) 2012-12-20 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element containing organic iridium exhibits blue-green to blue light emission
KR102077141B1 (ko) * 2013-05-29 2020-02-14 삼성디스플레이 주식회사 유기 발광 소자
KR20140140417A (ko) * 2013-05-29 2014-12-09 삼성디스플레이 주식회사 유기 발광 소자
KR102255197B1 (ko) * 2014-05-02 2021-05-25 삼성디스플레이 주식회사 유기 발광 소자
KR102293727B1 (ko) * 2014-05-02 2021-08-27 삼성디스플레이 주식회사 유기 발광 소자
KR102244071B1 (ko) * 2014-05-02 2021-04-26 삼성디스플레이 주식회사 유기 발광 소자
KR102288347B1 (ko) * 2014-05-02 2021-08-11 삼성디스플레이 주식회사 유기 발광 소자
KR102253442B1 (ko) * 2014-05-13 2021-05-20 삼성디스플레이 주식회사 유기 발광 소자
KR102253443B1 (ko) * 2014-05-13 2021-05-20 삼성디스플레이 주식회사 유기 발광 소자
KR102504123B1 (ko) * 2015-04-14 2023-03-02 삼성디스플레이 주식회사 유기 발광 소자
KR102623039B1 (ko) 2015-05-15 2024-01-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기 및 조명 장치
KR20180017077A (ko) * 2015-06-17 2018-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이리듐 착체, 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
KR102574052B1 (ko) 2015-11-19 2023-09-04 엘지디스플레이 주식회사 유기발광 표시장치
CN106784343B (zh) 2015-11-19 2018-10-09 乐金显示有限公司 有机发光显示装置
DE112016005489B4 (de) * 2015-12-01 2024-09-26 Semiconductor Energy Laboratory Co., Ltd. Licht emittierendes Element
CN106373989B (zh) * 2016-11-24 2019-10-22 上海天马有机发光显示技术有限公司 一种有机发光显示面板、电子设备以及制作方法
CN112056006B (zh) * 2018-05-08 2024-07-16 索尼半导体解决方案公司 显示设备及其制造方法以及电子设备
KR102572134B1 (ko) * 2018-07-24 2023-08-28 삼성전자주식회사 양자점 소자와 표시 장치
KR102227968B1 (ko) * 2018-08-28 2021-03-15 주식회사 엘지화학 유기 발광 소자
JP7190729B2 (ja) * 2018-08-31 2022-12-16 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子
JP7246681B2 (ja) 2018-09-26 2023-03-28 三国電子有限会社 トランジスタ及びトランジスタの製造方法、並びにトランジスタを含む表示装置
DE112019004819B4 (de) 2018-09-26 2022-06-30 Semiconductor Energy Laboratory Co., Ltd. Licht emittierende Vorrichtung, Licht emittierende Einrichtung, elektronisches Gerät und Beleuchtungsvorrichtung
JP7444436B2 (ja) 2020-02-05 2024-03-06 三国電子有限会社 液晶表示装置
JP7410596B2 (ja) 2020-06-23 2024-01-10 三国電子有限会社 エレクトロルミネセンス素子の製造方法、エレクトロルミネセンス素子、および表示装置
WO2022209812A1 (ja) * 2021-03-31 2022-10-06 出光興産株式会社 有機エレクトロルミネッセンス素子、電子機器、及び組成物
KR102578856B1 (ko) * 2021-04-13 2023-09-18 삼성디스플레이 주식회사 유기 발광 소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079413A (ja) * 2002-08-21 2004-03-11 Nec Corp 有機エレクトロルミネッセント素子
JP2005502165A (ja) * 2001-08-29 2005-01-20 ザ、トラスティーズ オブ プリンストン ユニバーシティ 金属錯体を含むキャリア阻止層を有する有機発光デバイス
JP2006066890A (ja) * 2004-07-29 2006-03-09 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3431386B2 (ja) 1995-03-16 2003-07-28 株式会社東芝 記録素子およびドリフト移動度変調素子
JP4030608B2 (ja) * 1996-05-01 2008-01-09 三菱化学株式会社 有機電界発光素子及びその製造方法
JP3866293B2 (ja) * 1996-08-19 2007-01-10 Ｔｄｋ株式会社 有機ｅｌ素子
US6395409B2 (en) * 1997-09-29 2002-05-28 Minolta Co., Ltd. Organic electroluminescent element
JP3370011B2 (ja) 1998-05-19 2003-01-27 三洋電機株式会社 有機エレクトロルミネッセンス素子
JP2000068057A (ja) 1998-06-12 2000-03-03 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子
JP2000196140A (ja) * 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
EP1089596A3 (en) * 1999-09-28 2003-02-05 Canon Kabushiki Kaisha Conductive liquid crystal device, and organic electroluminescence device
JP3651347B2 (ja) * 2000-03-16 2005-05-25 松下電器産業株式会社 有機電界発光素子
US6730929B2 (en) 1999-12-24 2004-05-04 Matsushita Electric Industrial Co., Ltd. Organic electroluminescent device
JP3904793B2 (ja) * 2000-02-23 2007-04-11 パイオニア株式会社 有機エレクトロルミネッセンス素子
JP4068279B2 (ja) * 2000-02-23 2008-03-26 パイオニア株式会社 有機エレクトロルミネッセンス素子
TWI225312B (en) * 2001-02-08 2004-12-11 Semiconductor Energy Lab Light emitting device
EP1390962B2 (en) * 2001-05-16 2023-07-05 The Trustees Of Princeton University High efficiency multi-color electro-phosphorescent oleds
JP4409942B2 (ja) 2001-08-29 2010-02-03 ザ トラスティーズ オブ プリンストン ユニバーシテイ 金属錯体を含むキャリア輸送層を有する有機発光デバイス
US6750608B2 (en) * 2001-11-09 2004-06-15 Konica Corporation Organic electroluminescence element and display
KR100596028B1 (ko) * 2001-11-12 2006-07-03 네오뷰코오롱 주식회사 고효율 유기 전계발광 소자
JP4447445B2 (ja) 2001-11-27 2010-04-07 株式会社半導体エネルギー研究所 発光素子
US6734457B2 (en) 2001-11-27 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
TW574525B (en) 2002-01-29 2004-02-01 Chi Mei Optoelectronics Corp Material for organic electroluminescent device and organic electroluminescent device fabricated using said material
JP4032783B2 (ja) * 2002-03-15 2008-01-16 株式会社デンソー 有機ｅｌ素子
US20040001969A1 (en) * 2002-06-27 2004-01-01 Eastman Kodak Company Device containing green organic light-emitting diode
US20040058193A1 (en) * 2002-09-16 2004-03-25 Eastman Kodak Company White organic light-emitting devices with improved performance
US20040086743A1 (en) * 2002-11-06 2004-05-06 Brown Cory S. Organometallic compounds for use in electroluminescent devices
JP4287198B2 (ja) 2002-11-18 2009-07-01 出光興産株式会社 有機エレクトロルミネッセンス素子
TWI316827B (en) * 2003-02-27 2009-11-01 Toyota Jidoshokki Kk Organic electroluminescent device
JP2004273163A (ja) 2003-03-05 2004-09-30 Sony Corp 有機ｅｌ素子とその製造方法および有機ｅｌパネル
US8704253B2 (en) * 2003-03-25 2014-04-22 Rohm Co., Ltd. Light-emitting device and organic electroluminescence light-emitting device
TWI224473B (en) * 2003-06-03 2004-11-21 Chin-Hsin Chen Doped co-host emitter system in organic electroluminescent devices
JP4650265B2 (ja) 2003-07-23 2011-03-16 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子、照明装置及び表示装置
KR101246247B1 (ko) 2003-08-29 2013-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계발광소자 및 그것을 구비한 발광장치
JP2005100977A (ja) * 2003-08-29 2005-04-14 Semiconductor Energy Lab Co Ltd 電界発光素子およびそれを用いた発光装置
CN1610468A (zh) 2003-10-24 2005-04-27 宾得株式会社 白色的有机电致发光装置
US7898168B2 (en) 2003-10-27 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Organic electroluminescent device having light-emitting layer with guest dopant
JP4243237B2 (ja) * 2003-11-10 2009-03-25 淳二 城戸 有機素子、有機ｅｌ素子、有機太陽電池、及び、有機ｆｅｔ構造、並びに、有機素子の製造方法
JP4947909B2 (ja) 2004-03-25 2012-06-06 三洋電機株式会社 有機エレクトロルミネッセンス素子
JP2005310742A (ja) 2004-03-25 2005-11-04 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子
US7622200B2 (en) * 2004-05-21 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting element
JP4925569B2 (ja) * 2004-07-08 2012-04-25 ローム株式会社 有機エレクトロルミネッセント素子
US20080303415A1 (en) 2004-08-05 2008-12-11 Yoshiyuki Suzuri Organic Electroluminescence Element, Display and Illuminator
JP2006059878A (ja) 2004-08-17 2006-03-02 Tdk Corp 有機ｅｌ素子及びその製造方法、並びに有機ｅｌディスプレイ
US20060040137A1 (en) 2004-08-17 2006-02-23 Tdk Corporation Organic el device, method of manufacturing the same, and organic el display
JP2006073640A (ja) 2004-08-31 2006-03-16 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子およびそれを備える有機エレクトロルミネッセンス装置
JP2006086482A (ja) 2004-09-17 2006-03-30 Fuji Photo Film Co Ltd 有機電界発光素子
WO2006059736A1 (en) 2004-11-30 2006-06-08 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
JP4653469B2 (ja) 2004-12-01 2011-03-16 出光興産株式会社 有機電界発光素子
US20060134461A1 (en) * 2004-12-17 2006-06-22 Shouquan Huo Organometallic materials and electroluminescent devices
JP2006216924A (ja) * 2005-01-07 2006-08-17 Toyota Industries Corp 有機エレクトロルミネッセンス素子及びその製造方法
KR100787428B1 (ko) * 2005-03-05 2007-12-26 삼성에스디아이 주식회사 유기 전계 발광 소자
TWI418606B (zh) * 2005-04-25 2013-12-11 Ｕｄｃ愛爾蘭有限公司 有機電致發光裝置
US20060270066A1 (en) 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
US8334057B2 (en) * 2005-06-08 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP2006344544A (ja) 2005-06-10 2006-12-21 Toyo Ink Mfg Co Ltd フルカラー有機電界発光素子の作製方法
JP5076891B2 (ja) 2005-07-01 2012-11-21 コニカミノルタホールディングス株式会社 有機エレクトロルミネッセンス素子材料、有機エレクトロルミネッセンス素子、表示装置及び照明装置
CN102964338A (zh) 2005-08-31 2013-03-13 保土谷化学工业株式会社 具有被吡啶基取代的三唑环结构的化合物和有机电致发光器件
TWI348491B (en) 2005-10-19 2011-09-11 Au Optronics Corp Metal coordination compound and organic electroluminescent device using the same
JP2007161886A (ja) 2005-12-14 2007-06-28 Konica Minolta Holdings Inc 有機エレクトロルミネッセンス素子材料、有機エレクトロルミネッセンス素子、表示装置及び照明装置
JP2007201407A (ja) * 2005-12-26 2007-08-09 Fuji Xerox Co Ltd 有機電界発光素子
US20070200489A1 (en) * 2006-02-01 2007-08-30 Poon Hak F Large area organic electronic devices and methods of fabricating the same
EP1863105B1 (en) 2006-06-02 2020-02-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7902742B2 (en) 2006-07-04 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
EP1876658A3 (en) 2006-07-04 2014-06-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
WO2008069153A1 (en) 2006-12-04 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP5530608B2 (ja) * 2007-09-13 2014-06-25 株式会社半導体エネルギー研究所 発光素子および発光装置
JP6099652B2 (ja) * 2012-09-05 2017-03-22 パイオニア株式会社 撮像装置及び画像処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005502165A (ja) * 2001-08-29 2005-01-20 ザ、トラスティーズ オブ プリンストン ユニバーシティ 金属錯体を含むキャリア阻止層を有する有機発光デバイス
JP2004079413A (ja) * 2002-08-21 2004-03-11 Nec Corp 有機エレクトロルミネッセント素子
JP2006066890A (ja) * 2004-07-29 2006-03-09 Sanyo Electric Co Ltd 有機エレクトロルミネッセンス素子

Also Published As

Publication number Publication date
JP5530608B2 (ja) 2014-06-25
JP6008887B2 (ja) 2016-10-19
US20160164017A1 (en) 2016-06-09
JP2014112715A (ja) 2014-06-19
JP2017055143A (ja) 2017-03-16
JP2009088491A (ja) 2009-04-23
JP2015179860A (ja) 2015-10-08
KR20160119008A (ko) 2016-10-12
US9269906B2 (en) 2016-02-23
US20090072725A1 (en) 2009-03-19
US10193097B2 (en) 2019-01-29
KR20090028420A (ko) 2009-03-18
JP6370871B2 (ja) 2018-08-08

Similar Documents

Publication Publication Date Title
KR102800073B1 (ko) 발광소자, 발광장치, 및 전자기기
JP6370871B2 (ja) 発光装置
KR101434277B1 (ko) 발광소자, 발광 장치 및 전자기기
KR101424694B1 (ko) 발광소자 및 전자기기
KR101608676B1 (ko) 발광소자
KR101426717B1 (ko) 발광 소자, 발광 장치 및 전자 기기
JP5425439B2 (ja) 発光素子、発光装置、および電子機器

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

A107 Divisional application of patent
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20190829

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20200917

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20210827

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20220818

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000