JP5500803B2 - 薄膜トランジスタの作製方法 - Google Patents

薄膜トランジスタの作製方法 Download PDF

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Publication number
JP5500803B2
JP5500803B2 JP2008218506A JP2008218506A JP5500803B2 JP 5500803 B2 JP5500803 B2 JP 5500803B2 JP 2008218506 A JP2008218506 A JP 2008218506A JP 2008218506 A JP2008218506 A JP 2008218506A JP 5500803 B2 JP5500803 B2 JP 5500803B2
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film
semiconductor film
microcrystalline semiconductor
region
thin film
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Japanese (ja)
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JP2009076894A5 (enExample
JP2009076894A (ja
Inventor
聡 小林
郁子 川俣
浩二 大力
茂樹 小森
敏行 伊佐
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP2008218506A 2007-08-31 2008-08-27 薄膜トランジスタの作製方法 Expired - Fee Related JP5500803B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008218506A JP5500803B2 (ja) 2007-08-31 2008-08-27 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007227073 2007-08-31
JP2007227073 2007-08-31
JP2008218506A JP5500803B2 (ja) 2007-08-31 2008-08-27 薄膜トランジスタの作製方法

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JP2009076894A JP2009076894A (ja) 2009-04-09
JP2009076894A5 JP2009076894A5 (enExample) 2011-10-13
JP5500803B2 true JP5500803B2 (ja) 2014-05-21

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US (3) US7768009B2 (enExample)
JP (1) JP5500803B2 (enExample)
KR (2) KR101484297B1 (enExample)
CN (3) CN104485362B (enExample)
TW (1) TWI520344B (enExample)

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CN102790075A (zh) 2012-11-21
TWI520344B (zh) 2016-02-01
KR101484297B1 (ko) 2015-01-19
CN104485362B (zh) 2017-09-26
US20120129288A1 (en) 2012-05-24
KR20140130077A (ko) 2014-11-07
CN101378082A (zh) 2009-03-04
CN104485362A (zh) 2015-04-01
US20090057672A1 (en) 2009-03-05
US20100285624A1 (en) 2010-11-11
KR20090023135A (ko) 2009-03-04
CN102790075B (zh) 2015-02-25
US7768009B2 (en) 2010-08-03
US8389993B2 (en) 2013-03-05
TW200926417A (en) 2009-06-16
KR101601182B1 (ko) 2016-03-21
JP2009076894A (ja) 2009-04-09
US8133771B2 (en) 2012-03-13

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