CN104485362B - 显示装置以及显示装置的制造方法 - Google Patents

显示装置以及显示装置的制造方法 Download PDF

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Publication number
CN104485362B
CN104485362B CN201410649540.2A CN201410649540A CN104485362B CN 104485362 B CN104485362 B CN 104485362B CN 201410649540 A CN201410649540 A CN 201410649540A CN 104485362 B CN104485362 B CN 104485362B
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film
semiconductor film
electrode
microcrystalline semiconductor
region
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CN104485362A (zh
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小林聪
川俣郁子
大力浩二
小森茂树
伊佐敏行
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
CN201410649540.2A 2007-08-31 2008-08-29 显示装置以及显示装置的制造方法 Active CN104485362B (zh)

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JP2007227073 2007-08-31
JP2007-227073 2007-08-31
CN2008102124766A CN101378082B (zh) 2007-08-31 2008-08-29 显示装置以及显示装置的制造方法

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CN2008102124766A Expired - Fee Related CN101378082B (zh) 2007-08-31 2008-08-29 显示装置以及显示装置的制造方法
CN201210298582.7A Expired - Fee Related CN102790075B (zh) 2007-08-31 2008-08-29 显示装置以及显示装置的制造方法

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US (3) US7768009B2 (enExample)
JP (1) JP5500803B2 (enExample)
KR (2) KR101484297B1 (enExample)
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TW (1) TWI520344B (enExample)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0713590D0 (en) 2007-07-12 2007-08-22 Micromass Ltd Mass spectrometer
JP2009049384A (ja) 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
JP5395384B2 (ja) * 2007-09-07 2014-01-22 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP5311957B2 (ja) * 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5311955B2 (ja) * 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101523353B1 (ko) 2007-12-03 2015-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막트랜지스터 및 반도체 장치
KR101479997B1 (ko) * 2008-06-20 2015-01-07 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
TW201009954A (en) * 2008-08-19 2010-03-01 Chunghwa Picture Tubes Ltd Thin film transistor, pixel structure and fabrication methods thereof
US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US20100237374A1 (en) * 2009-03-20 2010-09-23 Electronics And Telecommunications Research Institute Transparent Organic Light Emitting Diode Lighting Device
JP2010283060A (ja) * 2009-06-03 2010-12-16 Hitachi Displays Ltd 表示装置及びその製造方法
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
WO2011004755A1 (en) 2009-07-10 2011-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102362616B1 (ko) 2009-07-31 2022-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101056427B1 (ko) 2009-08-13 2011-08-11 삼성모바일디스플레이주식회사 박막트랜지스터의 제조방법 및 그를 포함하는 유기전계발광표시장치의 제조방법
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101832698B1 (ko) * 2009-10-14 2018-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011048925A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011105183A1 (en) * 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor element and deposition apparatus
JP5752447B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
JP5752446B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
KR101783352B1 (ko) * 2010-06-17 2017-10-10 삼성디스플레이 주식회사 평판 표시 장치 및 그 제조 방법
JP2012015436A (ja) * 2010-07-05 2012-01-19 Sony Corp 薄膜トランジスタおよび表示装置
US8558960B2 (en) 2010-09-13 2013-10-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method for manufacturing the same
US8916866B2 (en) * 2010-11-03 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101820372B1 (ko) * 2010-11-09 2018-01-22 삼성디스플레이 주식회사 표시 기판, 표시 장치 및 이의 제조 방법
JP5912467B2 (ja) 2010-12-10 2016-04-27 株式会社半導体エネルギー研究所 光電変換回路及び表示装置
WO2012117439A1 (ja) 2011-02-28 2012-09-07 パナソニック株式会社 薄膜半導体装置及びその製造方法
CN102959712A (zh) 2011-06-17 2013-03-06 松下电器产业株式会社 薄膜晶体管以及薄膜晶体管的制造方法
TW201316580A (zh) * 2011-08-22 2013-04-16 Sumitomo Chemical Co 有機薄膜電晶體
CN103314444B (zh) * 2011-10-28 2016-09-28 株式会社日本有机雷特显示器 薄膜半导体器件以及薄膜半导体器件的制造方法
CN103189990A (zh) 2011-10-28 2013-07-03 松下电器产业株式会社 薄膜半导体器件及其制造方法
TWI621183B (zh) * 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
WO2013118233A1 (ja) * 2012-02-06 2013-08-15 パナソニック株式会社 薄膜半導体装置の製造方法及び薄膜半導体装置
US9209309B2 (en) * 2012-02-06 2015-12-08 Joled Inc. Method for fabricating thin-film semiconductor device and thin-film semiconductor device
KR101968115B1 (ko) * 2012-04-23 2019-08-13 엘지디스플레이 주식회사 어레이 기판 및 이의 제조방법
JP6082911B2 (ja) 2012-06-08 2017-02-22 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及び薄膜トランジスタの製造方法
US9012914B2 (en) * 2012-06-08 2015-04-21 Panasonic Corporation Thin-film transistor and method for manufacturing thin-film transistor
US8993383B2 (en) 2012-06-08 2015-03-31 Panasonic Corporation Thin-film transistor and method for manufacturing thin-film transistor
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6220597B2 (ja) * 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
US9929276B2 (en) * 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101486363B1 (ko) * 2012-08-22 2015-01-26 엘지디스플레이 주식회사 유기전계발광표시장치
TWI631711B (zh) * 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
TWI506797B (zh) * 2013-06-21 2015-11-01 Ye Xin Technology Consulting Co Ltd 薄膜晶體管及其製造方法
KR102032748B1 (ko) * 2013-06-28 2019-10-16 엘지디스플레이 주식회사 유기전계 발광소자의 제조 방법 및 그 방법에 의해 제조된 유기전계 발광소자
KR20150007000A (ko) * 2013-07-10 2015-01-20 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 박막 트랜지스터 기판의 제조 방법
KR102230301B1 (ko) * 2014-01-06 2021-03-22 삼성디스플레이 주식회사 박막 트랜지스터 및 그 제조 방법
US9876110B2 (en) * 2014-01-31 2018-01-23 Stmicroelectronics, Inc. High dose implantation for ultrathin semiconductor-on-insulator substrates
JP2016029719A (ja) * 2014-07-17 2016-03-03 出光興産株式会社 薄膜トランジスタ
CN104851892A (zh) * 2015-05-12 2015-08-19 深圳市华星光电技术有限公司 窄边框柔性显示装置及其制作方法
CN104882415B (zh) * 2015-06-08 2019-01-04 深圳市华星光电技术有限公司 Ltps阵列基板及其制造方法
CN105097827A (zh) * 2015-06-08 2015-11-25 深圳市华星光电技术有限公司 Ltps阵列基板及其制造方法
US9793409B2 (en) * 2016-01-14 2017-10-17 Hon Hai Precision Industry Co., Ltd. Thin film transistor array panel
KR102039216B1 (ko) 2016-07-18 2019-11-26 최해용 투명 전광판 장치
CN106876476B (zh) * 2017-02-16 2020-04-17 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板及电子设备
CN108735819B (zh) * 2017-04-13 2020-07-14 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制造方法、显示基板
CN109390412A (zh) * 2018-10-24 2019-02-26 合肥鑫晟光电科技有限公司 晶体管及其制造方法、显示基板、显示装置
CN119947109A (zh) * 2023-11-01 2025-05-06 北京超弦存储器研究院 存储器及其制造方法、电子设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200525226A (en) * 2004-01-29 2005-08-01 Quanta Display Inc Liquid crystal display and fabricating the same
CN101355037A (zh) * 2007-07-27 2009-01-28 株式会社半导体能源研究所 显示装置及其制造方法
CN103066113A (zh) * 2007-07-20 2013-04-24 株式会社半导体能源研究所 液晶显示装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2663500B2 (ja) * 1988-04-28 1997-10-15 富士通株式会社 薄膜トランジスタの製造方法
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP2970176B2 (ja) * 1992-02-21 1999-11-02 松下電器産業株式会社 薄膜トランジスタの製造方法及びその薄膜トランジスタを用いた液晶表示装置
JPH06275524A (ja) 1993-03-24 1994-09-30 G T C:Kk 薄膜トランジスタの製造方法
TW303526B (enExample) * 1994-12-27 1997-04-21 Matsushita Electric Industrial Co Ltd
JPH08195492A (ja) 1995-01-13 1996-07-30 Matsushita Electric Ind Co Ltd 多結晶薄膜の形成方法および薄膜トランジスタの製造方法
JPH0974207A (ja) * 1995-09-04 1997-03-18 Toyota Motor Corp 薄膜トランジスタの製造方法
US6444506B1 (en) * 1995-10-25 2002-09-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing silicon thin film devices using laser annealing in a hydrogen mixture gas followed by nitride formation
JPH09186342A (ja) 1995-10-25 1997-07-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
KR100257158B1 (ko) * 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
JP3942699B2 (ja) * 1997-08-29 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001051292A (ja) 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
JP2001007024A (ja) 1999-06-18 2001-01-12 Sanyo Electric Co Ltd 多結晶シリコン膜の形成方法
JP2004146691A (ja) * 2002-10-25 2004-05-20 Chi Mei Electronics Corp 微結晶薄膜の成膜方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび薄膜トランジスタを用いた画像表示装置
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP4554292B2 (ja) * 2003-07-18 2010-09-29 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2005173037A (ja) * 2003-12-09 2005-06-30 Fujitsu Display Technologies Corp 液晶表示装置及びその製造方法
WO2005074030A1 (en) * 2004-01-30 2005-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI234288B (en) * 2004-07-27 2005-06-11 Au Optronics Corp Method for fabricating a thin film transistor and related circuits
JP2006156972A (ja) * 2004-10-28 2006-06-15 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
KR100645718B1 (ko) * 2005-04-28 2006-11-14 삼성에스디아이 주식회사 박막 트랜지스터 및 그 제조방법
EP1998373A3 (en) * 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5116277B2 (ja) * 2006-09-29 2013-01-09 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8354674B2 (en) * 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US7998800B2 (en) * 2007-07-06 2011-08-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2009049384A (ja) * 2007-07-20 2009-03-05 Semiconductor Energy Lab Co Ltd 発光装置
KR101446251B1 (ko) * 2007-08-07 2014-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치, 이 표시 장치를 구비한 전자기기 및 그 제조 방법
US7968885B2 (en) * 2007-08-07 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
US9054206B2 (en) * 2007-08-17 2015-06-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2009071289A (ja) * 2007-08-17 2009-04-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
KR101418586B1 (ko) * 2007-12-18 2014-07-14 삼성디스플레이 주식회사 박막 트랜지스터, 이의 제조방법, 이를 갖는 박막트랜지스터 기판 및 이를 갖는 표시장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200525226A (en) * 2004-01-29 2005-08-01 Quanta Display Inc Liquid crystal display and fabricating the same
CN103066113A (zh) * 2007-07-20 2013-04-24 株式会社半导体能源研究所 液晶显示装置
CN101355037A (zh) * 2007-07-27 2009-01-28 株式会社半导体能源研究所 显示装置及其制造方法

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US20120129288A1 (en) 2012-05-24
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