JP5490210B2 - レーザーアニーリング装置 - Google Patents
レーザーアニーリング装置 Download PDFInfo
- Publication number
- JP5490210B2 JP5490210B2 JP2012275847A JP2012275847A JP5490210B2 JP 5490210 B2 JP5490210 B2 JP 5490210B2 JP 2012275847 A JP2012275847 A JP 2012275847A JP 2012275847 A JP2012275847 A JP 2012275847A JP 5490210 B2 JP5490210 B2 JP 5490210B2
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- cutter
- lower plate
- laser beam
- annealing apparatus
- laser annealing
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- 238000005224 laser annealing Methods 0.000 title claims description 28
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Description
Claims (6)
- レーザー光が通過するように入射口が形成される下板部;
前記下板部に載置され、前記入射口をカバーする透明窓が形成される上板部;
前記上板部に装着され、前記レーザー光の一部を遮る第1のカッター部;及び
前記下板部に装着され、前記入射口を通過する前記レーザー光の一部を遮る第2のカッター部;を含むことを特徴とするレーザーアニーリング装置。 - 前記下板部は、
チャンバーの上側に配置され、前記入射口が形成される下部板;及び
前記下部板に形成され、前記入射口と連通し、前記第2のカッター部が装着される装着溝部;を含むことを特徴とする、請求項1に記載のレーザーアニーリング装置。 - 前記第1のカッター部は、
前記下部板に装着されるカッターレール;
前記カッターレールに沿って移動する移動板;
前記移動板に結合され、前記透明窓に突出形成され、前記レーザー光の縁部を遮る第1のカッター;及び
前記下部板に結合され、前記移動板と連結され、長さが可変になる第1のアクチュエーター;を含むことを特徴とする、請求項2に記載のレーザーアニーリング装置。 - 前記第2のカッター部は、
前記装着溝部に設置され、長さが可変になる第2のアクチュエーター;及び
前記第2のアクチュエーターに結合され、前記レーザー光の縁部を遮る第2のカッター;を含むことを特徴とする、請求項2に記載のレーザーアニーリング装置。 - 前記第2のカッターの端部底面には傾斜面が形成されることを特徴とする、請求項4に記載のレーザーアニーリング装置。
- 前記第2カッターにはマーキングホールが形成されることを特徴とする、請求項4に記載のレーザーアニーリング装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0138697 | 2011-12-20 | ||
KR1020110138697A KR101288993B1 (ko) | 2011-12-20 | 2011-12-20 | 레이저 어닐링 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013131750A JP2013131750A (ja) | 2013-07-04 |
JP5490210B2 true JP5490210B2 (ja) | 2014-05-14 |
Family
ID=48631160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012275847A Active JP5490210B2 (ja) | 2011-12-20 | 2012-12-18 | レーザーアニーリング装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5490210B2 (ja) |
KR (1) | KR101288993B1 (ja) |
CN (1) | CN103170736B (ja) |
TW (1) | TWI504466B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
PL228818B1 (pl) | 2015-04-14 | 2018-05-30 | Mejer-Nowakowska Magdalena M.S. Steel Spółka Cywilna | Sposób wyżarzania drutu |
KR101862088B1 (ko) | 2016-03-03 | 2018-05-30 | 에이피시스템 주식회사 | Ela 공정용 레이저 빔 조절 모듈 |
CN108878317B (zh) * | 2018-06-07 | 2020-12-11 | 云谷(固安)科技有限公司 | 一种激光退火装置和方法 |
KR102435310B1 (ko) * | 2020-07-07 | 2022-08-23 | 디앤에이 주식회사 | 레이저 열처리 장치 |
DE102022111572A1 (de) * | 2022-05-10 | 2023-11-16 | Trumpf Laser- Und Systemtechnik Gmbh | Messvorrichtung zum Vermessen eines Laserlinienstrahls |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09205051A (ja) * | 1996-01-25 | 1997-08-05 | Hitachi Ltd | イオンビーム投射方法およびその装置 |
JP3330881B2 (ja) * | 1996-02-13 | 2002-09-30 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
JPH09270393A (ja) * | 1996-03-29 | 1997-10-14 | Sanyo Electric Co Ltd | レーザー光照射装置 |
JP3357579B2 (ja) | 1997-07-28 | 2002-12-16 | 日本電信電話株式会社 | ブロッカ装置 |
JP2000066133A (ja) * | 1998-06-08 | 2000-03-03 | Sanyo Electric Co Ltd | レ―ザ―光照射装置 |
JP4322373B2 (ja) * | 1999-11-15 | 2009-08-26 | 日本電気株式会社 | 膜体部改質装置及び膜体部改質方法 |
KR100885904B1 (ko) * | 2001-08-10 | 2009-02-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레이저 어닐링장치 및 반도체장치의 제작방법 |
US6777276B2 (en) * | 2002-08-29 | 2004-08-17 | Sharp Laboratories Of America, Inc. | System and method for optimized laser annealing smoothing mask |
JP4138384B2 (ja) | 2002-07-19 | 2008-08-27 | 株式会社昭和真空 | ソレノイド、シャッタ機構並びにそれを用いた圧電素子の周波数調整方法及びその装置 |
TWI227949B (en) * | 2004-01-02 | 2005-02-11 | Toppoly Optoelectronics Corp | Laser annealing apparatus for producing poly silicon membrane layer and its method of using laser crystallized to form poly silicon membrane thereof |
JP4838982B2 (ja) * | 2004-01-30 | 2011-12-14 | 株式会社 日立ディスプレイズ | レーザアニール方法およびレーザアニール装置 |
US7438468B2 (en) * | 2004-11-12 | 2008-10-21 | Applied Materials, Inc. | Multiple band pass filtering for pyrometry in laser based annealing systems |
JP2006185933A (ja) * | 2004-12-24 | 2006-07-13 | Advanced Lcd Technologies Development Center Co Ltd | レーザアニール方法およびレーザアニール装置 |
CN101034665B (zh) * | 2007-04-13 | 2011-08-03 | 友达光电股份有限公司 | 激光退火装置及激光退火方法 |
US7923660B2 (en) * | 2007-08-15 | 2011-04-12 | Applied Materials, Inc. | Pulsed laser anneal system architecture |
JP5240764B2 (ja) * | 2008-05-28 | 2013-07-17 | 株式会社日本製鋼所 | レーザ光照射装置 |
CN102077318B (zh) * | 2008-06-26 | 2013-03-27 | 株式会社Ihi | 激光退火方法及装置 |
JP5595021B2 (ja) * | 2009-12-03 | 2014-09-24 | 住友重機械工業株式会社 | レーザ処理装置 |
KR101164524B1 (ko) * | 2009-12-21 | 2012-07-10 | 에이피시스템 주식회사 | 레이저 빔의 라인 길이 조절이 가능한 레이저 가공 장치 |
-
2011
- 2011-12-20 KR KR1020110138697A patent/KR101288993B1/ko active IP Right Grant
-
2012
- 2012-12-10 TW TW101146338A patent/TWI504466B/zh active
- 2012-12-14 CN CN201210546553.8A patent/CN103170736B/zh active Active
- 2012-12-18 JP JP2012275847A patent/JP5490210B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2013131750A (ja) | 2013-07-04 |
CN103170736A (zh) | 2013-06-26 |
KR20130071286A (ko) | 2013-06-28 |
CN103170736B (zh) | 2015-03-18 |
KR101288993B1 (ko) | 2013-08-16 |
TWI504466B (zh) | 2015-10-21 |
TW201341098A (zh) | 2013-10-16 |
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