JP5486578B2 - 半導体製造方法 - Google Patents
半導体製造方法 Download PDFInfo
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- JP5486578B2 JP5486578B2 JP2011245369A JP2011245369A JP5486578B2 JP 5486578 B2 JP5486578 B2 JP 5486578B2 JP 2011245369 A JP2011245369 A JP 2011245369A JP 2011245369 A JP2011245369 A JP 2011245369A JP 5486578 B2 JP5486578 B2 JP 5486578B2
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- 239000004065 semiconductor Substances 0.000 title claims description 91
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 144
- 238000000034 method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 31
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- JHJNPOSPVGRIAN-SFHVURJKSA-N n-[3-[(1s)-1-[[6-(3,4-dimethoxyphenyl)pyrazin-2-yl]amino]ethyl]phenyl]-5-methylpyridine-3-carboxamide Chemical compound C1=C(OC)C(OC)=CC=C1C1=CN=CC(N[C@@H](C)C=2C=C(NC(=O)C=3C=C(C)C=NC=3)C=CC=2)=N1 JHJNPOSPVGRIAN-SFHVURJKSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Weting (AREA)
Description
第一の実施形態を図1から図5を用いて説明する。
上記第一構造22を形成する方法は、第一の実施形態により提供されるフローチャートに限定されていない。第二の実施形態を図6から図10を用いて詳細に説明する。図6は、本発明の第二実施形態によるフローチャートである。図7から図10は、本発明の第二実施形態による構造を示す図である。第二実施形態には、第一実施形態と同様に、複数の溝を有する第一構造33は、半導体基板31と成長基板1との間の接触面積を減らすために、成長基板1に隣接する場所で形成される。第二実施形態の第一構造33を形成する方法は、第一実施形態と異なり、その手順は以下のように示す。
2 半導体基板
3 半導体素子
4 接合基板
22 第一構造
2a 誘電体層
2a 1第二構造
31 半導体基板
33 第一構造
Claims (5)
- 成長基板を提供する工程と、
前記成長基板に誘電体層を形成する工程と、
露光、現像及びエッチング法によって前記誘電体層に複数の溝を有する第二構造を形成する工程と、
前記第二構造に半導体基板を形成する工程と、
水素フッ化物(HF)溶液によって実行されるウェットエッチングによって前記第二構造を除去し、前記第二構造に対応する前記半導体基板の第一構造を形成する工程と、
前記成長基板及び前記半導体基板を分離するように、前記成長基板及び前記半導体基板を加熱するとともに圧力を加えることにより前記半導体基板を接合基板に接合する工程と、
を含んでいることを特徴とする半導体製造方法。 - 前記半導体基板を前記接合基板に接合する前記工程の前には、前記半導体基板に半導体素子を形成する工程を更に含み、
前記接合基板は、銅(Cu)材料、アルミニウム(Al)材料、シリコン(Si)材料、ダイヤモンド材料、銅合金材料及びアルミニウム合金材料からなる群から選ばれた一つであり、
前記半導体基板は、窒化物半導体基板であり、前記成長基板は、アルミナ(Al2O3)材料、サファイア材料、炭化ケイ素(SiC)材料とシリコン(Si)材料からなる群から選ばれた一つであることを特徴とする請求項1に記載の半導体製造方法。 - 前記誘電体層は、二酸化ケイ素(SiO2)の材料を有し、
前記第二構造は、前記成長基板を見せるとともに連続的な溝構造であることを特徴とする請求項1に記載の半導体製造方法。 - 上面を有する成長基板を提供する工程と、
前記成長基板の上面に誘電体層を形成する工程と、
露光、現像及びエッチング法によって前記誘電体層に複数の溝を有する第二構造を形成する工程と、
前記第二構造に半導体基板の下面を形成する工程と、
水素フッ化物(HF)溶液によって実行されるウェットエッチングによって前記第二構造を除去し、前記第二構造に対応する前記半導体基板の第一構造を形成する工程と、
前記成長基板の上面及び前記半導体基板の下面を分離するように、前記成長基板及び前記半導体基板を加熱するとともに圧力を加えることにより前記半導体基板を接合基板に接合する工程と、
を含んでいることを特徴とする半導体製造方法。 - 上面を有する成長基板を提供する工程と、
前記成長基板の上面に誘電体層を形成する工程と、
露光、現像及びエッチング法によって前記誘電体層に複数の溝を有する第二構造を形成する工程と、
前記第二構造に半導体基板の下面を形成する工程と、
水素フッ化物(HF)溶液によって実行されるウェットエッチングによって前記第二構造を除去し、前記第二構造に対応する前記半導体基板の第一構造を形成する工程と、
前記成長基板の上面及び前記半導体基板の下面を分離するように、前記成長基板及び前記半導体基板を加熱する工程と、
を含んでいることを特徴とする半導体製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100107823A TW201237963A (en) | 2011-03-08 | 2011-03-08 | Method of semiconductor manufacturing process |
TW100107823 | 2011-03-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012188342A JP2012188342A (ja) | 2012-10-04 |
JP5486578B2 true JP5486578B2 (ja) | 2014-05-07 |
Family
ID=46795958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011245369A Expired - Fee Related JP5486578B2 (ja) | 2011-03-08 | 2011-11-09 | 半導体製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8906778B2 (ja) |
JP (1) | JP5486578B2 (ja) |
KR (1) | KR101352242B1 (ja) |
CN (1) | CN102683280B (ja) |
TW (1) | TW201237963A (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101471608B1 (ko) * | 2013-06-12 | 2014-12-11 | 광주과학기술원 | 나노로드를 포함하는 질화물계 발광다이오드 및 이의 제조방법 |
KR102075994B1 (ko) | 2014-03-25 | 2020-02-12 | 삼성전자주식회사 | 기판 분리 장치 및 기판 분리 시스템 |
CN108461388B (zh) * | 2018-03-26 | 2020-11-06 | 云谷(固安)科技有限公司 | 一种衬底结构、加工方法和显示装置 |
CN110767846B (zh) * | 2019-10-31 | 2022-04-08 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
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KR20010021494A (ko) * | 1997-07-03 | 2001-03-15 | 추후제출 | 에피택셜 증착에 의한 프리 스탠딩 기판의 제조를 위한열적 부정합 보정 |
EP0926709A3 (en) * | 1997-12-26 | 2000-08-30 | Canon Kabushiki Kaisha | Method of manufacturing an SOI structure |
JP2001313259A (ja) * | 2000-04-28 | 2001-11-09 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体基板の製造方法及び半導体素子 |
JP4438277B2 (ja) | 2002-09-27 | 2010-03-24 | 日亜化学工業株式会社 | 窒化物半導体結晶の成長方法及びそれを用いた素子 |
JP4427993B2 (ja) * | 2003-08-12 | 2010-03-10 | ソニー株式会社 | 半導体発光素子の製造方法 |
JP2005097045A (ja) * | 2003-09-25 | 2005-04-14 | Sumitomo Electric Ind Ltd | Iii族窒化物ウエハの製造方法 |
KR100533910B1 (ko) * | 2004-01-15 | 2005-12-07 | 엘지전자 주식회사 | 고품질 질화물 반도체 박막 성장 방법 |
JP2006316307A (ja) * | 2005-05-11 | 2006-11-24 | Furukawa Co Ltd | Iii族窒化物半導体基板の製造方法 |
JP4885507B2 (ja) * | 2005-10-05 | 2012-02-29 | 古河機械金属株式会社 | Iii族窒化物半導体層の形成方法、iii族窒化物半導体基板の製造方法 |
US7629209B2 (en) * | 2005-10-17 | 2009-12-08 | Chunghwa Picture Tubes, Ltd. | Methods for fabricating polysilicon film and thin film transistors |
JP4879614B2 (ja) * | 2006-03-13 | 2012-02-22 | 住友化学株式会社 | 3−5族窒化物半導体基板の製造方法 |
TW200842967A (en) | 2007-04-16 | 2008-11-01 | Univ Nat Chiao Tung | Method of etching nitride semiconductor |
CN101743616B (zh) | 2007-06-28 | 2012-02-22 | 株式会社半导体能源研究所 | 半导体装置的制造方法 |
US7888270B2 (en) * | 2007-09-04 | 2011-02-15 | National Chiao Tung University | Etching method for nitride semiconductor |
JP4811376B2 (ja) * | 2007-09-25 | 2011-11-09 | ソニー株式会社 | 窒化物系iii−v族化合物層およびそれを用いた基板 |
JP2009190918A (ja) * | 2008-02-13 | 2009-08-27 | New Japan Radio Co Ltd | 窒化物半導体基板の製造方法及び窒化物半導体装置の製造方法 |
JP2010010613A (ja) * | 2008-06-30 | 2010-01-14 | Tokuyama Corp | 積層体、自立基板製造用基板、自立基板およびこれらの製造方法 |
JP5057398B2 (ja) * | 2008-08-05 | 2012-10-24 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
US8324083B2 (en) * | 2008-09-30 | 2012-12-04 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor element |
TWI442460B (zh) | 2009-01-07 | 2014-06-21 | Advanced Optoelectronic Tech | 分離兩種材料的方法 |
KR101106150B1 (ko) * | 2009-08-26 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 제조 방법 |
KR101229832B1 (ko) * | 2009-08-26 | 2013-02-04 | 서울옵토디바이스주식회사 | 반도체 기판 제조 방법 및 발광 소자 제조 방법 |
-
2011
- 2011-03-08 TW TW100107823A patent/TW201237963A/zh unknown
- 2011-05-12 CN CN201110122196.8A patent/CN102683280B/zh not_active Expired - Fee Related
- 2011-06-17 US US13/163,378 patent/US8906778B2/en not_active Expired - Fee Related
- 2011-11-09 JP JP2011245369A patent/JP5486578B2/ja not_active Expired - Fee Related
- 2011-11-18 KR KR1020110120964A patent/KR101352242B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN102683280B (zh) | 2015-05-27 |
US8906778B2 (en) | 2014-12-09 |
KR101352242B1 (ko) | 2014-01-17 |
KR20120102486A (ko) | 2012-09-18 |
US20120231614A1 (en) | 2012-09-13 |
CN102683280A (zh) | 2012-09-19 |
TW201237963A (en) | 2012-09-16 |
JP2012188342A (ja) | 2012-10-04 |
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