JP5456748B2 - 直方体の流体貯蔵・計量分配容器 - Google Patents
直方体の流体貯蔵・計量分配容器 Download PDFInfo
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- JP5456748B2 JP5456748B2 JP2011226626A JP2011226626A JP5456748B2 JP 5456748 B2 JP5456748 B2 JP 5456748B2 JP 2011226626 A JP2011226626 A JP 2011226626A JP 2011226626 A JP2011226626 A JP 2011226626A JP 5456748 B2 JP5456748 B2 JP 5456748B2
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- Filling Or Discharging Of Gas Storage Vessels (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
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Description
本発明は、一般には、直方体形状を有する流体貯蔵・計量分配容器を含む流体貯蔵・計量分配装置、およびかかる流体貯蔵・計量分配装置を含む一体型ガスキャビネットアセンブリに関する。
吸着剤式の流体貯蔵・計量分配装置は、半導体製造用途で、様々な半導体製造装置の作業用のガス供給として、近年使用されるようになってきている。
1つの実施態様では、本発明は、流体貯蔵・計量分配装置であって、内部容積を有する流体貯蔵・計量分配容器であり内部容積が流体を吸着して保持する物理的吸着剤を含みかつ容器から計量分配するために流体が該吸着剤から脱着可能である容器と、脱着された流体を容器から計量分配するため容器に連結された計量分配アセンブリと、を備え、流体貯蔵・計量分配容器は直方体形態である、流体貯蔵・計量分配装置に関する。
囲まれた内部容積の輪郭を定め、キャビネットからのガスを計量分配するように構成された上記内部容積内の流路回路を含む、ガスキャビネットと;
ガスキャビネットの内部容積内に配置されかつガス供給関係において流路回路へ連結されたガス供給源であって、上記ガス供給源は、少なくとも1つの直方体形態の流体貯蔵・計量分配容器を備え、上記流体貯蔵・計量分配容器の各々は、上記ガスを吸着して保持する物理的吸着剤を含み、さらに、流路回路への流れのために容器からの上記ガスの計量分配用に上記流体貯蔵・計量分配容器へ連結された計量分配アセンブリを備えている、ガス供給源と;
を備える、ガスキャビネットアセンブリに関する。
本発明は、物理的吸着剤式の流体貯蔵・計量分配装置は、直方体構造を有する流体貯蔵・計量分配容器を使用して組み立てられてもよい、という発見に基づいており、該直方体構造は、脱着処理の性質と程度、容器内の物理的吸着媒体にとって実現可能な装填密度、及び半導体製造作業用のこうした容器を備えた流体貯蔵・計量分配装置の有用性、に関して驚くべき予想外の利点を備えている。
Claims (10)
- ガス供給源パッケージであって、
第1の端部が閉じて内部容積を画定する引き抜き加工された継ぎ目のない管を備え、
前記内部容積は、前記引き抜き加工された継ぎ目のない管の前記内部容積にサイズ及び形状が適合し、かつ前記内部容積の少なくとも60%を占めるモノリス炭素吸着剤を保持し、
前記引き抜き加工された継ぎ目のない管は、平らな天板部材が溶接された第2の端部を有し、前記平らな天板部材には流体計量分配アセンブリが固定される、
ガス供給源パッケージ。 - 前記内部容積は、モノリス炭素吸着剤上に吸着された流体を含み、かつ、前記モノリス炭素吸着剤からは、前記パッケージから計量分配するために前記流体が脱着可能である、請求項1に記載のガス供給源パッケージ。
- 前記モノリス炭素吸着剤は、積層された別個のモノリス物品を備え、前記別個のモノリス物品の各々は、中実の円筒形態を有する、請求項1に記載のガス供給源パッケージ。
- 前記流体は、アルシン、ホスフィン、セレン化水素、テルル化水素、三フッ化窒素、三フッ化ホウ素、三塩化ホウ素、ジボラン、トリメチルシラン、テトラメチルシラン、ジシラン、シラン、ゲルマン及び有機金属気体試薬からなる群から選択される流体種を含む、請求項2に記載のガス供給源パッケージ。
- 前記流体は、前記内部容積内が約1500トルを超えない圧力を有する、請求項2に記載のガス供給源パッケージ。
- 前記流体は、前記内部容積内が約700トルを超えない圧力を有する、請求項2に記載のガス供給源パッケージ。
- 前記流体は、前記内部容積内が約400〜約700トルの範囲の圧力を有する、請求項2に記載のガス供給源パッケージ。
- 半導体製造方法であって、
前記方法において使用される請求項2に記載のガス供給源パッケージからの流体の計量分配する工程を含む、半導体製造方法。 - 前記方法は、イオン注入、化学蒸着、反応性イオンエッチング、フォトレジスト残留除去から選択される、請求項8に記載の半導体製造方法。
- 前記流体は、アルシン、ホスフィン、三フッ化窒素、三フッ化ホウ素、三塩化ホウ素、ジボラン、トリメチルシラン、テトラメチルシラン、ジシラン、シラン、ゲルマン、有機金属気体試薬、セレン化水素、及びテルル化水素からなる群から選択される、請求項8に記載の半導体製造方法。
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