JP5436046B2 - 炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素半導体装置の製造方法 Download PDF

Info

Publication number
JP5436046B2
JP5436046B2 JP2009127576A JP2009127576A JP5436046B2 JP 5436046 B2 JP5436046 B2 JP 5436046B2 JP 2009127576 A JP2009127576 A JP 2009127576A JP 2009127576 A JP2009127576 A JP 2009127576A JP 5436046 B2 JP5436046 B2 JP 5436046B2
Authority
JP
Japan
Prior art keywords
silicon carbide
carbide layer
semiconductor device
manufacturing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009127576A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010278120A (ja
JP2010278120A5 (enExample
Inventor
健一 浜野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2009127576A priority Critical patent/JP5436046B2/ja
Publication of JP2010278120A publication Critical patent/JP2010278120A/ja
Publication of JP2010278120A5 publication Critical patent/JP2010278120A5/ja
Application granted granted Critical
Publication of JP5436046B2 publication Critical patent/JP5436046B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP2009127576A 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法 Expired - Fee Related JP5436046B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009127576A JP5436046B2 (ja) 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009127576A JP5436046B2 (ja) 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010278120A JP2010278120A (ja) 2010-12-09
JP2010278120A5 JP2010278120A5 (enExample) 2011-12-22
JP5436046B2 true JP5436046B2 (ja) 2014-03-05

Family

ID=43424838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009127576A Expired - Fee Related JP5436046B2 (ja) 2009-05-27 2009-05-27 炭化珪素半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP5436046B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021025084A1 (ja) * 2019-08-06 2021-02-11 学校法人関西学院 ＳｉＣ種結晶及びその製造方法、当該ＳｉＣ種結晶を成長させたＳｉＣインゴット及びその製造方法、並びに、当該ＳｉＣインゴットより製造されるＳｉＣウェハ、エピタキシャル膜付きＳｉＣウェハ及びこれらの製造方法
EP4012079B1 (en) 2019-08-06 2025-10-15 Kwansei Gakuin Educational Foundation Method for producing a sic substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162850A (ja) * 1997-08-27 1999-06-18 Matsushita Electric Ind Co Ltd 炭化珪素基板およびその製造方法、並びに炭化珪素基板を用いた半導体素子
JP2007269627A (ja) * 2002-03-19 2007-10-18 Central Res Inst Of Electric Power Ind 基板から継続するマイクロパイプを低減させるＳｉＣ結晶の製造方法およびＳｉＣ結晶、ＳｉＣ単結晶膜、ＳｉＣ半導体素子、ＳｉＣ単結晶基板および電子デバイス、ならびにＳｉＣバルク結晶の製造方法
JP4100070B2 (ja) * 2002-07-05 2008-06-11 トヨタ自動車株式会社 半導体装置の製造方法
JP4732025B2 (ja) * 2004-08-19 2011-07-27 東北電力株式会社 炭化珪素薄膜の製造方法
JP4954654B2 (ja) * 2006-09-21 2012-06-20 新日本製鐵株式会社 エピタキシャル炭化珪素単結晶基板及びその製造方法
JP2008112834A (ja) * 2006-10-30 2008-05-15 Sumitomo Electric Ind Ltd 炭化ケイ素半導体装置の製造方法
JP4853364B2 (ja) * 2007-04-11 2012-01-11 トヨタ自動車株式会社 ＳｉＣ単結晶エピタキシャル薄膜の成長方法

Also Published As

Publication number Publication date
JP2010278120A (ja) 2010-12-09

Similar Documents

Publication Publication Date Title
JP5685736B2 (ja) 半導体装置及びその製造方法
JP5834179B2 (ja) 炭化珪素半導体装置の製造方法
JP5995347B2 (ja) ＳｉＣ半導体装置及びその製造方法
JP3784393B2 (ja) 半導体装置及びその製造方法
US20130023113A1 (en) Method for manufacturing semiconductor device
US9269781B2 (en) Semiconductor device and method for manufacturing the same
KR20100100585A (ko) 반도체 장치의 제조 방법 및 반도체 장치
JP2012243966A (ja) 半導体装置
JP2010147182A (ja) エピタキシャルウエハの製造方法および半導体装置の製造方法
JP2013062397A (ja) 炭化珪素半導体装置の製造方法
KR102550521B1 (ko) 실리콘 카바이드 반도체 소자의 제조방법
JP4842527B2 (ja) 半導体装置の製造方法
JP5870672B2 (ja) 半導体装置
JP2018206872A (ja) 半導体装置
WO2012120731A1 (ja) 半導体装置の製造方法
WO2012105170A1 (ja) 半導体装置およびその製造方法
JP6035763B2 (ja) ゲート酸化膜の形成方法及び炭化珪素半導体装置の製造方法
JP2010034481A (ja) 半導体装置の製造方法および半導体装置
US8765617B2 (en) Method of manufacturing semiconductor device
JP2013110331A (ja) 半導体装置の製造方法
WO2015045628A1 (ja) 炭化珪素半導体装置の製造方法
JP2011040431A (ja) 半導体装置およびその製造方法
JP7586776B2 (ja) 半導体装置とその製造方法
JP5436046B2 (ja) 炭化珪素半導体装置の製造方法
JP5921089B2 (ja) エピタキシャルウエハの製造方法及び半導体装置の製造方法

Legal Events

Date Code Title Description
RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20111003

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111109

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130808

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130820

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130902

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131112

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131210

R150 Certificate of patent or registration of utility model

Ref document number: 5436046

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees