JP5431145B2 - 光電子素子デバイス及び光導波路を有するプリント回路基板素子 - Google Patents
光電子素子デバイス及び光導波路を有するプリント回路基板素子 Download PDFInfo
- Publication number
- JP5431145B2 JP5431145B2 JP2009508041A JP2009508041A JP5431145B2 JP 5431145 B2 JP5431145 B2 JP 5431145B2 JP 2009508041 A JP2009508041 A JP 2009508041A JP 2009508041 A JP2009508041 A JP 2009508041A JP 5431145 B2 JP5431145 B2 JP 5431145B2
- Authority
- JP
- Japan
- Prior art keywords
- mirror
- optoelectronic
- deflection
- optical waveguide
- optoelectronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims description 88
- 230000005693 optoelectronics Effects 0.000 title claims description 63
- 239000000463 material Substances 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920001225 polyester resin Polymers 0.000 claims description 4
- 239000004645 polyester resin Substances 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 229920006352 transparent thermoplastic Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims 2
- 229920005989 resin Polymers 0.000 claims 2
- 239000012815 thermoplastic material Substances 0.000 claims 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 48
- 239000010410 layer Substances 0.000 description 36
- 230000008569 process Effects 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 19
- 238000003780 insertion Methods 0.000 description 8
- 230000037431 insertion Effects 0.000 description 8
- 238000000465 moulding Methods 0.000 description 7
- 239000013307 optical fiber Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Description
プリント回路基板素子10の上側に設けられた互いに別体の伝導性トラック又は接触面と接触される構成も勿論可能であり、これは、図15でも参照される。この場合、VCSEL素子1は、WO2005/064381号公報に記載されているように、基板11の上面に、例えば銅でできた熱拡散層上に配置してもよい。一方、素子1は、その下側に両接触面を備えた構成とし(フリップチップ技術)、これにより、ハンダ付けボールにより基板11上に接触させてもよい。このように、素子1は挿入中にはすでに完全に接触されており、従って、マイクロバイアス経路の介在は不要となる(図14参照)。
5 偏向ミラー
10 プリント回路基板素子
11 基板
12 接触面
13 光重合可能材料層
14 光導波路
Claims (17)
- 光透過面(3)と、光透過材で構成されてミラー反射後面(5’)を有する偏向ミラー(5)とを備え、該偏向ミラーが通過する光線(15)を所定の角度だけ偏向する光電子素子(1)を有し、
偏向ミラーは、光電子素子の光透過面上に直接的に設けられ、光電子素子に比べて小さく、且つ、光導波路に直接的に光学的に結合される湾曲面を備え、
光電子素子(1)はウェハー基板(21)によって支持され、
偏向ミラーが成形および硬化可能な材料から構成されて光電子素子の光透過面(3)上に直接的に成形されることにより、一体型のデバイスとして構成された光電子素子デバイス。 - 前記偏向ミラーは光線を合焦する屈折ミラーまたは凹面鏡として設計されている請求項1に記載の光電子素子デバイス。
- 前記ミラー反射後面が金属層で形成されている請求項1に記載の光電子素子デバイス。
- 前記光透過材は、紫外線硬化材である請求項1に記載の光電子素子デバイス。
- 前記偏向ミラーは、光透過性の熱可塑性材料で構成されている請求項1に記載の光電子素子デバイス。
- 前記偏向ミラーは、光透過性の熱硬化性樹脂材料で構成されている請求項1に記載の光電子素子デバイス。
- 前記偏向ミラーは非球面のミラーである請求項1に記載の光電子素子デバイス。
- 前記偏向ミラーは5000μm以下の焦点距離を有する請求項2に記載の光電子素子デバイス。
- 前記偏向ミラーは光線を90度の角度だけ偏向する、請求項1に記載の光電子素子デバイス。
- 前記光電子素子がVCSEL(垂直共振器表面発光ダイオードレーザ)素子である、請求項1に記載の光電子素子デバイス。
- 前記光電子素子がフォトダイオードである、請求項1に記載の光電子素子デバイス。
- 前記ミラー反射後面が金または銀によって形成されている、請求項3に記載の光電子素子デバイス。
- 前記紫外線硬化材が、シリコンハイブリッドポリマーと、無機・有機混成ポリマーと、有機的に変質されたセラミック材と、シリコン、有機ポリマー、およびガラスを主成分とするハイブリッドポリマーと、シリコン、有機ポリマー、およびセラミックを主成分とするハイブリッドポリマーとを含むグループから選択されている、請求項4に記載の光電子素子デバイス。
- 前記偏向ミラーの光透過性の熱可塑性材料が、ポリカーボネートと、ポリメチルメタクリレートと、ポリスチレンと、硬化エポキシ樹脂と、ポリエステル樹脂とを含むグループから選択されている、請求項5に記載の光電子素子デバイス。
- 前記偏向ミラーの光透過性の熱硬化性樹脂材料が、ポリカーボネートと、ポリメチルメタクリレートと、ポリスチレンと、硬化エポキシ樹脂と、ポリエステル樹脂とを含むグループから選択されている、請求項6に記載の光電子素子デバイス。
- 請求項1から15のいずれか一項に記載の少なくとも1つの光電子素子デバイス(1)と、
光電子素子デバイスと光学的に結合される少なくとも1つの光導波路(14)とを有し、
光電子素子デバイスが光学的に光重合可能な層形状の材料(13)内に埋設され、
光導波路(14)が光子の照射により光重合可能な材料(13)内に形成され、
偏向ミラー(5)が、光電子素子デバイスからの光線を光導波路の方向、またはその逆方向に偏向する、プリント回路基板素子(10)。 - 前記形成された光導波路は、前記偏向ミラーの前面からある距離だけ離間して終端する請求項16に記載のプリント回路基板素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0079206A AT503027B1 (de) | 2006-05-08 | 2006-05-08 | Leiterplattenelement mit optoelektronischem bauelement und licht-wellenleiter |
ATA792/2006 | 2006-05-08 | ||
PCT/AT2007/000216 WO2007128021A1 (de) | 2006-05-08 | 2007-05-08 | Leiterplattenelement mit optoelektronischem bauelement und licht-wellenleiter |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009536361A JP2009536361A (ja) | 2009-10-08 |
JP5431145B2 true JP5431145B2 (ja) | 2014-03-05 |
Family
ID=38198959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009508041A Active JP5431145B2 (ja) | 2006-05-08 | 2007-05-08 | 光電子素子デバイス及び光導波路を有するプリント回路基板素子 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8417078B2 (ja) |
EP (1) | EP2016449B1 (ja) |
JP (1) | JP5431145B2 (ja) |
KR (1) | KR20090010100A (ja) |
CN (2) | CN101432648A (ja) |
AT (1) | AT503027B1 (ja) |
CA (1) | CA2651023A1 (ja) |
TW (1) | TW200806109A (ja) |
WO (1) | WO2007128021A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7945127B2 (en) * | 2007-09-19 | 2011-05-17 | Intel Corporation | Electrically pluggable optical interconnect |
AT505834B1 (de) * | 2007-09-21 | 2009-09-15 | Austria Tech & System Tech | Leiterplattenelement |
WO2009151045A1 (ja) * | 2008-06-10 | 2009-12-17 | 住友ベークライト株式会社 | 電子機器、携帯電話機、フレキシブルケーブル、光導波路形成体の製造方法 |
AT12314U1 (de) | 2009-10-16 | 2012-03-15 | Austria Tech & System Tech | Leiterplattenelement und verfahren zur herstellung eines solchen leiterplattenelements |
DE102009051188A1 (de) * | 2009-10-29 | 2011-05-19 | Siemens Aktiengesellschaft | Lichtsignalgeber und Lichtempfänger für einen optischen Sensor |
US9064080B2 (en) | 2011-01-20 | 2015-06-23 | International Business Machines Corporation | Transferring heat through an optical layer of integrated circuitry |
AT12749U1 (de) | 2011-04-01 | 2012-10-15 | Austria Tech & System Tech | Leiterplattenelement mit wenigstens einer led |
DE102011101433A1 (de) | 2011-05-10 | 2012-12-13 | Technische Universität Dresden | Integrierbares optisches Koppelelement und Verfahren zu seiner Herstellung |
US8968987B2 (en) * | 2012-01-11 | 2015-03-03 | International Business Machines Corporation | Implementing enhanced optical mirror coupling and alignment utilizing two-photon resist |
EP2943830A1 (en) | 2013-01-11 | 2015-11-18 | Multiphoton Optics Gmbh | Optical package and a process for its preparation |
FI20135200L (fi) * | 2013-03-01 | 2014-09-02 | Tellabs Oy | Sähkölaite |
US10033464B2 (en) * | 2013-05-28 | 2018-07-24 | Stmicroelectronics S.R.L. | Optoelectronic device having improved optical coupling |
JP5980193B2 (ja) * | 2013-11-29 | 2016-08-31 | インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation | 光モジュール及び光モジュール製造方法。 |
US10007052B2 (en) | 2015-02-04 | 2018-06-26 | Heptagon Micro Optics Pte. Ltd. | Method for manufacturing waveguide structures on wafer-level and corresponding waveguide structures |
DE102015208852A1 (de) * | 2015-05-13 | 2016-11-17 | Nanoscribe Gmbh | Verfahren zum Herstellen einer dreidimensionalen Struktur |
EP3130950A1 (de) | 2015-08-10 | 2017-02-15 | Multiphoton Optics Gmbh | Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement |
US11611004B2 (en) | 2017-04-28 | 2023-03-21 | National Institute Of Advanced Industrial Science And Technology | Opto-electronic integrated circuit and computing apparatus |
US10353146B2 (en) * | 2017-06-28 | 2019-07-16 | Intel Corporation | Flexible and stretchable optical interconnect in wearable systems |
US11262605B2 (en) * | 2017-08-31 | 2022-03-01 | Lightwave Logic Inc. | Active region-less polymer modulator integrated on a common PIC platform and method |
US10162119B1 (en) * | 2017-09-15 | 2018-12-25 | Northrop Grumman Systems Corporation | Micro-beam shaping optics (MBSO) |
CN108418641B (zh) * | 2018-03-26 | 2024-03-22 | 杭州芯耘光电科技有限公司 | 一种集成光放大器的多信道光接收组件 |
CN111478180B (zh) * | 2020-04-23 | 2022-06-10 | 西安电子科技大学 | 片上集成慢光波导的半导体激光器 |
CN114567962B (zh) * | 2020-11-27 | 2023-11-10 | 鹏鼎控股(深圳)股份有限公司 | 电路板的制造方法及电路板 |
WO2022259518A1 (ja) * | 2021-06-11 | 2022-12-15 | 日本電信電話株式会社 | 光導波路デバイスの実装構造 |
CN114423154B (zh) * | 2021-12-01 | 2023-12-01 | 通富微电子股份有限公司 | 雪崩能量测试用连接装置以及雪崩能量测试装置 |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61133911A (ja) * | 1984-12-03 | 1986-06-21 | Nippon Telegr & Teleph Corp <Ntt> | 受発光素子と光導波路との結合方法 |
US5072421A (en) * | 1985-07-16 | 1991-12-10 | Canon Kabushiki Kaisha | Magnetic memory and recording-reproducing method for the magnetic memory |
DE3706255C2 (de) * | 1987-02-26 | 1995-07-06 | Siemens Ag | Lichtzündbarer Thyristor mit zusätzlichem elektrischen Gatekontakt |
JPH02234476A (ja) * | 1989-03-07 | 1990-09-17 | Nec Corp | 半導体発光ダイオード及び半導体発光ダイオードアレイ |
US5125054A (en) * | 1991-07-25 | 1992-06-23 | Motorola, Inc. | Laminated polymer optical waveguide interface and method of making same |
US5369529A (en) | 1993-07-19 | 1994-11-29 | Motorola, Inc. | Reflective optoelectronic interface device and method of making |
JPH07128531A (ja) * | 1993-09-10 | 1995-05-19 | Nippon Telegr & Teleph Corp <Ntt> | 光集積回路およびその作製方法 |
JPH10307237A (ja) * | 1997-05-08 | 1998-11-17 | New Japan Radio Co Ltd | 一体型光通信用半導体装置 |
TW565733B (en) * | 1998-03-18 | 2003-12-11 | Hitachi Ltd | Liquid crystal display device |
US6690845B1 (en) * | 1998-10-09 | 2004-02-10 | Fujitsu Limited | Three-dimensional opto-electronic modules with electrical and optical interconnections and methods for making |
US6845184B1 (en) * | 1998-10-09 | 2005-01-18 | Fujitsu Limited | Multi-layer opto-electronic substrates with electrical and optical interconnections and methods for making |
US6343171B1 (en) | 1998-10-09 | 2002-01-29 | Fujitsu Limited | Systems based on opto-electronic substrates with electrical and optical interconnections and methods for making |
US6684007B2 (en) * | 1998-10-09 | 2004-01-27 | Fujitsu Limited | Optical coupling structures and the fabrication processes |
DE69940577D1 (de) * | 1998-11-09 | 2009-04-23 | Seiko Instr Inc | Nahfeld Abtastkopf und Herstellungsverfahren dafür |
US6198864B1 (en) | 1998-11-24 | 2001-03-06 | Agilent Technologies, Inc. | Optical wavelength demultiplexer |
JP2000173947A (ja) * | 1998-12-07 | 2000-06-23 | Tokai Rika Co Ltd | プラスティックパッケージ |
JP2001141965A (ja) * | 1999-11-15 | 2001-05-25 | Canon Inc | 光結合器、その作製方法、およびこれを用いた光送受信装置、光インターコネクション装置 |
JP2001174671A (ja) | 1999-12-16 | 2001-06-29 | Japan Aviation Electronics Industry Ltd | 光素子モジュール |
US20010053260A1 (en) * | 2000-03-13 | 2001-12-20 | Toshiyuki Takizawa | Optical module and method for producing the same, and optical circuit device |
DE10023353A1 (de) * | 2000-05-12 | 2001-11-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung |
US6655810B2 (en) * | 2000-06-21 | 2003-12-02 | Fujitsu Display Technologies Corporation | Lighting unit |
US6670208B2 (en) * | 2000-06-23 | 2003-12-30 | Nec Corporation | Optical circuit in which fabrication is easy |
DE10043324A1 (de) | 2000-08-23 | 2002-03-14 | Infineon Technologies Ag | Opto-elektronische Baugruppe zum Multiplexen und/oder Demultiplexen optischer Signale |
US6909554B2 (en) * | 2000-12-27 | 2005-06-21 | Finisar Corporation | Wafer integration of micro-optics |
US7076125B2 (en) * | 2001-02-28 | 2006-07-11 | Nec Corporation | Optical circuit element and production method therefor, array-form optical circuit element, optical circuit device using it |
WO2003012505A1 (de) * | 2001-07-02 | 2003-02-13 | Infineon Technologies Ag | Vorrichtung und verfahren zum multiplexen und/oder demultiplexen optischer signale einer mehrzahl von wellenlängen |
JP3791394B2 (ja) * | 2001-11-01 | 2006-06-28 | 日本電気株式会社 | 光導波路基板 |
NL1019637C2 (nl) * | 2001-12-21 | 2003-07-09 | Lionix B V | Inrichting en werkwijze voor het inkoppelen van licht in een vlakke golfgeleider, inrichting en werkwijze voor het uitkoppelen van licht uit een vlakke golfgeleider, en werkwijzen voor het vervaardigen van dergelijke inrichtingen. |
JP2003307603A (ja) * | 2002-02-15 | 2003-10-31 | Omron Corp | 光学素子及び当該素子を用いた光学部品 |
KR100461157B1 (ko) * | 2002-06-07 | 2004-12-13 | 한국전자통신연구원 | 병렬 광접속 모듈 및 그 제조방법 |
JP2004061799A (ja) | 2002-07-29 | 2004-02-26 | Canon Inc | 二次元光導波装置、およびそれを用いた光電融合配線基板 |
JP4290652B2 (ja) * | 2002-11-05 | 2009-07-08 | ライトフリート コーポレイション | 光学的ファンアウト・ブロードキャスト接続 |
US7221829B2 (en) * | 2003-02-24 | 2007-05-22 | Ngk Spark Plug Co., Ltd. | Substrate assembly for supporting optical component and method of producing the same |
WO2004110117A1 (ja) | 2003-06-04 | 2004-12-16 | Zeon Corporation | 基板及びその製造方法 |
AT413891B (de) * | 2003-12-29 | 2006-07-15 | Austria Tech & System Tech | Leiterplattenelement mit wenigstens einem licht-wellenleiter sowie verfahren zur herstellung eines solchen leiterplattenelements |
JP5017765B2 (ja) * | 2004-03-30 | 2012-09-05 | 日本電気株式会社 | 光変調器とその製造方法並びに変調光学系とこれを用いた光インターコネクト装置並びに光通信装置 |
JP2005338696A (ja) * | 2004-05-31 | 2005-12-08 | Nec Corp | 光部品及びその製造方法 |
DE102004050118A1 (de) * | 2004-07-30 | 2006-03-23 | Osram Opto Semiconductors Gmbh | Halbleiterlaserbauelement, optische Vorrichtung für ein Halbleiterlaserbauelement und Verfahren zur Herstellung einer optischen Vorrichtung |
US7298941B2 (en) * | 2005-02-16 | 2007-11-20 | Applied Materials, Inc. | Optical coupling to IC chip |
WO2006093117A1 (ja) * | 2005-02-28 | 2006-09-08 | Nec Corporation | 2次元アレイ状光素子と光回路の接続構造 |
US7376169B2 (en) * | 2005-03-07 | 2008-05-20 | Joseph Reid Henrichs | Optical phase conjugation laser diode |
ATE391936T1 (de) * | 2005-04-18 | 2008-04-15 | Varioprint Ag | Verfahren zur herstellung eines bauteils zur optischen kopplung |
-
2006
- 2006-05-08 AT AT0079206A patent/AT503027B1/de not_active IP Right Cessation
-
2007
- 2007-04-30 TW TW096115258A patent/TW200806109A/zh unknown
- 2007-05-08 CN CNA2007800156855A patent/CN101432648A/zh active Pending
- 2007-05-08 WO PCT/AT2007/000216 patent/WO2007128021A1/de active Application Filing
- 2007-05-08 US US12/297,066 patent/US8417078B2/en active Active
- 2007-05-08 EP EP07718430.7A patent/EP2016449B1/de active Active
- 2007-05-08 KR KR1020087029787A patent/KR20090010100A/ko not_active Application Discontinuation
- 2007-05-08 CN CN201310093314.6A patent/CN103185934B/zh not_active Expired - Fee Related
- 2007-05-08 CA CA002651023A patent/CA2651023A1/en not_active Abandoned
- 2007-05-08 JP JP2009508041A patent/JP5431145B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP2016449A1 (de) | 2009-01-21 |
TW200806109A (en) | 2008-01-16 |
AT503027B1 (de) | 2007-07-15 |
CN101432648A (zh) | 2009-05-13 |
JP2009536361A (ja) | 2009-10-08 |
CA2651023A1 (en) | 2007-11-15 |
WO2007128021A1 (de) | 2007-11-15 |
KR20090010100A (ko) | 2009-01-28 |
CN103185934B (zh) | 2015-04-01 |
US8417078B2 (en) | 2013-04-09 |
CN103185934A (zh) | 2013-07-03 |
EP2016449B1 (de) | 2021-06-30 |
AT503027A4 (de) | 2007-07-15 |
US20090310905A1 (en) | 2009-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5431145B2 (ja) | 光電子素子デバイス及び光導波路を有するプリント回路基板素子 | |
TWI709776B (zh) | 具有光線偏轉元件之光學構件,其製造方法及適合於光學構件之線偏轉元件 | |
JP2022180575A (ja) | 光学システムを製造する方法および光学システム | |
US7421858B2 (en) | Optical transmission substrate, method for manufacturing optical transmission substrate and optoelectronic integrated circuit | |
JP5532929B2 (ja) | 光配線プリント基板の製造方法 | |
JP5271141B2 (ja) | 光電気混載モジュールの製造方法およびそれによって得られた光電気混載モジュール | |
JP4503064B2 (ja) | 光導波路デバイスの製法およびそれによって得られる光導波路デバイス、並びにそれに用いられる光導波路接続構造 | |
US20100142896A1 (en) | Printed circuit board element and method for producing the same | |
JP2004240220A (ja) | 光モジュール及びその製造方法、混成集積回路、混成回路基板、電子機器、光電気混載デバイス及びその製造方法 | |
CN113557644A (zh) | 具有一体式微透镜的竖直发射器 | |
JP2008040003A (ja) | フレキシブル光導波路フィルム、光送受信モジュール、マルチチャンネル光送受信モジュール及びフレキシブル光導波路フィルムの製造方法 | |
JPWO2007026843A1 (ja) | 導波路装置 | |
JP4308684B2 (ja) | 光導波路素子およびその製造方法 | |
JP2010190994A (ja) | 光電気混載モジュールおよびその製造方法 | |
JP2002169042A (ja) | 光導波路結合構造、光導波路及びその製造方法、並びに光導波路付き光素子部品及びその製造方法 | |
JP2009069359A (ja) | 光導波路デバイス、及び、光出力モジュール | |
JP4537758B2 (ja) | 光伝送素子モジュール | |
JP2017142352A (ja) | 光分岐部材及びそれを用いた光デバイス | |
JP2004233687A (ja) | 光導波路基板および光モジュール | |
JP2007187871A (ja) | ポリマ光導波路及びその製造方法 | |
JP2008275770A (ja) | 光路変換体、光路変換構造、複合光伝送基板および光モジュール | |
JP5320191B2 (ja) | 光コネクタ及びその製造方法 | |
JP2004258076A (ja) | 光配線層およびその製造方法 | |
JP2005266119A (ja) | 光電配線基板の製造方法 | |
JP2004279620A (ja) | 光集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100507 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120229 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120306 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120605 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120612 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120704 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120711 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120803 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120810 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120905 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130618 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130917 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131105 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131204 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5431145 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |