JP5420436B2 - 不揮発性記憶装置およびその製造方法 - Google Patents
不揮発性記憶装置およびその製造方法 Download PDFInfo
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- JP5420436B2 JP5420436B2 JP2010007173A JP2010007173A JP5420436B2 JP 5420436 B2 JP5420436 B2 JP 5420436B2 JP 2010007173 A JP2010007173 A JP 2010007173A JP 2010007173 A JP2010007173 A JP 2010007173A JP 5420436 B2 JP5420436 B2 JP 5420436B2
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- Prior art keywords
- film
- metal
- phase change
- interlayer insulating
- change material
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 150
- 239000002184 metal Substances 0.000 claims description 150
- 239000012782 phase change material Substances 0.000 claims description 127
- 239000011229 interlayer Substances 0.000 claims description 113
- 230000015654 memory Effects 0.000 claims description 111
- 239000004065 semiconductor Substances 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 68
- 230000008859 change Effects 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims 10
- 239000010408 film Substances 0.000 description 377
- 210000004027 cell Anatomy 0.000 description 34
- 239000011159 matrix material Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 230000008018 melting Effects 0.000 description 13
- 238000002844 melting Methods 0.000 description 13
- 238000001312 dry etching Methods 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 210000000352 storage cell Anatomy 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000618 GeSbTe Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8616—Thermal insulation means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010007173A JP5420436B2 (ja) | 2010-01-15 | 2010-01-15 | 不揮発性記憶装置およびその製造方法 |
TW099127432A TWI422026B (zh) | 2010-01-15 | 2010-08-17 | Method for manufacturing nonvolatile memory device |
PCT/JP2010/064175 WO2011086725A1 (ja) | 2010-01-15 | 2010-08-23 | 不揮発性記憶装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010007173A JP5420436B2 (ja) | 2010-01-15 | 2010-01-15 | 不揮発性記憶装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011146590A JP2011146590A (ja) | 2011-07-28 |
JP5420436B2 true JP5420436B2 (ja) | 2014-02-19 |
Family
ID=44304023
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010007173A Expired - Fee Related JP5420436B2 (ja) | 2010-01-15 | 2010-01-15 | 不揮発性記憶装置およびその製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5420436B2 (zh) |
TW (1) | TWI422026B (zh) |
WO (1) | WO2011086725A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666525B2 (en) | 2015-08-28 | 2017-05-30 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory device |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103560205B (zh) * | 2013-11-04 | 2015-10-14 | 中国科学院上海微系统与信息技术研究所 | 相变存储结构及制作方法 |
KR102092863B1 (ko) | 2013-12-30 | 2020-03-24 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10084017B2 (en) | 2014-01-17 | 2018-09-25 | Sony Semiconductor Solutions Corporation | Switch device and storage unit having a switch layer between first and second electrodes |
JP6151650B2 (ja) * | 2014-01-17 | 2017-06-21 | ソニーセミコンダクタソリューションズ株式会社 | 記憶装置 |
US9748311B2 (en) * | 2014-11-07 | 2017-08-29 | Micron Technology, Inc. | Cross-point memory and methods for fabrication of same |
KR102368428B1 (ko) * | 2017-06-29 | 2022-03-02 | 삼성전자주식회사 | 가변 저항 메모리 소자 및 그 제조방법 |
KR102307058B1 (ko) | 2017-07-06 | 2021-10-01 | 삼성전자주식회사 | 분리 라인들 사이의 정보 저장 패턴을 포함하는 반도체 소자 |
KR20200106681A (ko) * | 2019-03-05 | 2020-09-15 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
CN112151674A (zh) * | 2020-08-31 | 2020-12-29 | 清华大学 | 低温非易失性存储器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6579760B1 (en) * | 2002-03-28 | 2003-06-17 | Macronix International Co., Ltd. | Self-aligned, programmable phase change memory |
JP2005064050A (ja) * | 2003-08-14 | 2005-03-10 | Toshiba Corp | 半導体記憶装置及びそのデータ書き込み方法 |
US6815704B1 (en) * | 2003-09-04 | 2004-11-09 | Silicon Storage Technology, Inc. | Phase change memory device employing thermally insulating voids |
WO2006028117A1 (ja) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | 抵抗変化素子とその製造方法 |
JP4991155B2 (ja) * | 2006-01-19 | 2012-08-01 | 株式会社東芝 | 半導体記憶装置 |
JP2009123725A (ja) * | 2007-11-12 | 2009-06-04 | Hitachi Ltd | 不揮発性半導体記憶装置 |
TWI361504B (en) * | 2008-01-30 | 2012-04-01 | Ind Tech Res Inst | Hollow stylus-shaped structure, methods for fabricating the same, and phase-change memory devices, magnetic random access memory devices, resistive random access memory devices, field emission display, multi-electrobeams direct writing lithography appara |
JP2009267219A (ja) * | 2008-04-28 | 2009-11-12 | Hitachi Ltd | 半導体記憶装置およびその製造方法 |
JP5342189B2 (ja) * | 2008-08-06 | 2013-11-13 | 株式会社日立製作所 | 不揮発性記憶装置及びその製造方法 |
-
2010
- 2010-01-15 JP JP2010007173A patent/JP5420436B2/ja not_active Expired - Fee Related
- 2010-08-17 TW TW099127432A patent/TWI422026B/zh not_active IP Right Cessation
- 2010-08-23 WO PCT/JP2010/064175 patent/WO2011086725A1/ja active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666525B2 (en) | 2015-08-28 | 2017-05-30 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor memory device |
Also Published As
Publication number | Publication date |
---|---|
TW201138087A (en) | 2011-11-01 |
WO2011086725A1 (ja) | 2011-07-21 |
JP2011146590A (ja) | 2011-07-28 |
TWI422026B (zh) | 2014-01-01 |
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