JP5420436B2 - 不揮発性記憶装置およびその製造方法 - Google Patents

不揮発性記憶装置およびその製造方法 Download PDF

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Publication number
JP5420436B2
JP5420436B2 JP2010007173A JP2010007173A JP5420436B2 JP 5420436 B2 JP5420436 B2 JP 5420436B2 JP 2010007173 A JP2010007173 A JP 2010007173A JP 2010007173 A JP2010007173 A JP 2010007173A JP 5420436 B2 JP5420436 B2 JP 5420436B2
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Japan
Prior art keywords
film
metal
phase change
interlayer insulating
change material
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Expired - Fee Related
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JP2010007173A
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English (en)
Japanese (ja)
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JP2011146590A (ja
Inventor
浩志 守谷
佳孝 笹子
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2010007173A priority Critical patent/JP5420436B2/ja
Priority to TW099127432A priority patent/TWI422026B/zh
Priority to PCT/JP2010/064175 priority patent/WO2011086725A1/ja
Publication of JP2011146590A publication Critical patent/JP2011146590A/ja
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Publication of JP5420436B2 publication Critical patent/JP5420436B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H10N70/8616—Thermal insulation means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
JP2010007173A 2010-01-15 2010-01-15 不揮発性記憶装置およびその製造方法 Expired - Fee Related JP5420436B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010007173A JP5420436B2 (ja) 2010-01-15 2010-01-15 不揮発性記憶装置およびその製造方法
TW099127432A TWI422026B (zh) 2010-01-15 2010-08-17 Method for manufacturing nonvolatile memory device
PCT/JP2010/064175 WO2011086725A1 (ja) 2010-01-15 2010-08-23 不揮発性記憶装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010007173A JP5420436B2 (ja) 2010-01-15 2010-01-15 不揮発性記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2011146590A JP2011146590A (ja) 2011-07-28
JP5420436B2 true JP5420436B2 (ja) 2014-02-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010007173A Expired - Fee Related JP5420436B2 (ja) 2010-01-15 2010-01-15 不揮発性記憶装置およびその製造方法

Country Status (3)

Country Link
JP (1) JP5420436B2 (zh)
TW (1) TWI422026B (zh)
WO (1) WO2011086725A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666525B2 (en) 2015-08-28 2017-05-30 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103560205B (zh) * 2013-11-04 2015-10-14 中国科学院上海微系统与信息技术研究所 相变存储结构及制作方法
KR102092863B1 (ko) 2013-12-30 2020-03-24 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US10084017B2 (en) 2014-01-17 2018-09-25 Sony Semiconductor Solutions Corporation Switch device and storage unit having a switch layer between first and second electrodes
JP6151650B2 (ja) * 2014-01-17 2017-06-21 ソニーセミコンダクタソリューションズ株式会社 記憶装置
US9748311B2 (en) * 2014-11-07 2017-08-29 Micron Technology, Inc. Cross-point memory and methods for fabrication of same
KR102368428B1 (ko) * 2017-06-29 2022-03-02 삼성전자주식회사 가변 저항 메모리 소자 및 그 제조방법
KR102307058B1 (ko) 2017-07-06 2021-10-01 삼성전자주식회사 분리 라인들 사이의 정보 저장 패턴을 포함하는 반도체 소자
KR20200106681A (ko) * 2019-03-05 2020-09-15 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
CN112151674A (zh) * 2020-08-31 2020-12-29 清华大学 低温非易失性存储器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6579760B1 (en) * 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
JP2005064050A (ja) * 2003-08-14 2005-03-10 Toshiba Corp 半導体記憶装置及びそのデータ書き込み方法
US6815704B1 (en) * 2003-09-04 2004-11-09 Silicon Storage Technology, Inc. Phase change memory device employing thermally insulating voids
WO2006028117A1 (ja) * 2004-09-09 2006-03-16 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子とその製造方法
JP4991155B2 (ja) * 2006-01-19 2012-08-01 株式会社東芝 半導体記憶装置
JP2009123725A (ja) * 2007-11-12 2009-06-04 Hitachi Ltd 不揮発性半導体記憶装置
TWI361504B (en) * 2008-01-30 2012-04-01 Ind Tech Res Inst Hollow stylus-shaped structure, methods for fabricating the same, and phase-change memory devices, magnetic random access memory devices, resistive random access memory devices, field emission display, multi-electrobeams direct writing lithography appara
JP2009267219A (ja) * 2008-04-28 2009-11-12 Hitachi Ltd 半導体記憶装置およびその製造方法
JP5342189B2 (ja) * 2008-08-06 2013-11-13 株式会社日立製作所 不揮発性記憶装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666525B2 (en) 2015-08-28 2017-05-30 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device

Also Published As

Publication number Publication date
TW201138087A (en) 2011-11-01
WO2011086725A1 (ja) 2011-07-21
JP2011146590A (ja) 2011-07-28
TWI422026B (zh) 2014-01-01

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