JP5419167B2 - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP5419167B2 JP5419167B2 JP2010179468A JP2010179468A JP5419167B2 JP 5419167 B2 JP5419167 B2 JP 5419167B2 JP 2010179468 A JP2010179468 A JP 2010179468A JP 2010179468 A JP2010179468 A JP 2010179468A JP 5419167 B2 JP5419167 B2 JP 5419167B2
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- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 65
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000005373 porous glass Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L25/0657—Stacked arrangements of devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
2 回路(LSI構造)
10 穴
11 絶縁膜
12 バリア膜(TaN膜)
13 プラグ(導電性金属)
20 SiCN膜
31 貫通電極
33 ガラス基板
100 半導体装置
Claims (2)
- 半導体基板の表面に半導体素子を集積させて回路の少なくとも一部を形成する工程(a)と、
前記半導体基板の表面から穴を開ける工程(b)と、
前記穴の内表面に絶縁膜およびバリア膜を形成する工程(c)と、
前記バリア膜の内表面に、前記穴を埋めるように導電性金属を形成する工程(d)と、
その後前記半導体基板の裏面を加工して前記半導体基板の厚さを減少させ、前記導電性金属、前記バリア膜、および前記絶縁膜を前記裏面から突出させる工程(e)と、
その後、前記半導体基板の裏面にCを2原子%〜40原子%添加した組成のSiCN膜を設ける工程(f)と、
を有することを特徴とする半導体装置の製造方法。 - 表面に回路が形成された半導体基板と、
前記半導体基板を貫通して一部が裏面から突出するように設けられた貫通電極と、
前記裏面を覆うように設けられ、Cを2原子%〜40原子%添加した組成を有するSiCN膜と、を有することを特徴とする半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010179468A JP5419167B2 (ja) | 2010-08-10 | 2010-08-10 | 半導体装置の製造方法および半導体装置 |
US13/814,950 US20130140700A1 (en) | 2010-08-10 | 2011-08-04 | Method of manufacturing a semiconductor device and semiconductor device |
PCT/JP2011/067847 WO2012020689A1 (ja) | 2010-08-10 | 2011-08-04 | 半導体装置の製造方法および半導体装置 |
CN2011800389423A CN103081077A (zh) | 2010-08-10 | 2011-08-04 | 半导体装置的制造方法及半导体装置 |
TW100128435A TW201216411A (en) | 2010-08-10 | 2011-08-09 | Method of manufacturing a semiconductor device and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010179468A JP5419167B2 (ja) | 2010-08-10 | 2010-08-10 | 半導体装置の製造方法および半導体装置 |
Publications (3)
Publication Number | Publication Date |
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JP2012038996A JP2012038996A (ja) | 2012-02-23 |
JP2012038996A5 JP2012038996A5 (ja) | 2013-07-11 |
JP5419167B2 true JP5419167B2 (ja) | 2014-02-19 |
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JP2010179468A Expired - Fee Related JP5419167B2 (ja) | 2010-08-10 | 2010-08-10 | 半導体装置の製造方法および半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130140700A1 (ja) |
JP (1) | JP5419167B2 (ja) |
CN (1) | CN103081077A (ja) |
TW (1) | TW201216411A (ja) |
WO (1) | WO2012020689A1 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US8940637B2 (en) * | 2012-07-05 | 2015-01-27 | Globalfoundries Singapore Pte. Ltd. | Method for forming through silicon via with wafer backside protection |
US8963336B2 (en) | 2012-08-03 | 2015-02-24 | Samsung Electronics Co., Ltd. | Semiconductor packages, methods of manufacturing the same, and semiconductor package structures including the same |
US9034752B2 (en) * | 2013-01-03 | 2015-05-19 | Micron Technology, Inc. | Methods of exposing conductive vias of semiconductor devices and associated structures |
CN103426864B (zh) * | 2013-08-26 | 2016-08-10 | 华进半导体封装先导技术研发中心有限公司 | 适用于转接板的tsv结构及其制备方法 |
CN105990166B (zh) * | 2015-02-27 | 2018-12-21 | 中芯国际集成电路制造(上海)有限公司 | 晶圆键合方法 |
TWI587458B (zh) * | 2015-03-17 | 2017-06-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法與基板結構 |
CN105428311A (zh) * | 2015-12-16 | 2016-03-23 | 华进半导体封装先导技术研发中心有限公司 | Tsv背部露头的工艺方法 |
TWI605557B (zh) * | 2015-12-31 | 2017-11-11 | 矽品精密工業股份有限公司 | 電子封裝件及其製法與基板結構 |
CN107305840B (zh) * | 2016-04-25 | 2020-05-12 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
US10396012B2 (en) | 2016-05-27 | 2019-08-27 | International Business Machines Corporation | Advanced through substrate via metallization in three dimensional semiconductor integration |
US9786605B1 (en) * | 2016-05-27 | 2017-10-10 | International Business Machines Corporation | Advanced through substrate via metallization in three dimensional semiconductor integration |
US10312181B2 (en) | 2016-05-27 | 2019-06-04 | International Business Machines Corporation | Advanced through substrate via metallization in three dimensional semiconductor integration |
US9997452B1 (en) | 2017-01-27 | 2018-06-12 | Micron Technology, Inc. | Forming conductive plugs for memory device |
CN108735744B (zh) | 2017-04-21 | 2021-02-02 | 联华电子股份有限公司 | 半导体存储装置以及其制作方法 |
CN109994422B (zh) * | 2017-12-29 | 2021-10-19 | 江苏长电科技股份有限公司 | Tsv封装结构及其制备方法 |
KR20220048690A (ko) | 2020-10-13 | 2022-04-20 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
CN115588619A (zh) * | 2021-07-05 | 2023-01-10 | 长鑫存储技术有限公司 | 微凸块及其形成方法、芯片互连结构及方法 |
US20230352369A1 (en) * | 2022-04-28 | 2023-11-02 | Invensas Bonding Technologies, Inc. | Through-substrate vias with metal plane layers and methods of manufacturing the same |
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JP4606713B2 (ja) * | 2002-10-17 | 2011-01-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4454242B2 (ja) * | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP4492196B2 (ja) * | 2004-04-16 | 2010-06-30 | セイコーエプソン株式会社 | 半導体装置の製造方法、回路基板、並びに電子機器 |
JP4500961B2 (ja) * | 2004-06-07 | 2010-07-14 | 国立大学法人九州工業大学 | 薄膜形成方法 |
WO2006059589A1 (ja) * | 2004-11-30 | 2006-06-08 | Kyushu Institute Of Technology | パッケージングされた積層型半導体装置及びその製造方法 |
JP2006269580A (ja) * | 2005-03-23 | 2006-10-05 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
JP5120913B2 (ja) * | 2006-08-28 | 2013-01-16 | 国立大学法人東北大学 | 半導体装置および多層配線基板 |
KR20100021856A (ko) * | 2008-08-18 | 2010-02-26 | 삼성전자주식회사 | 관통 전극을 갖는 반도체장치의 형성방법 및 관련된 장치 |
US8501587B2 (en) * | 2009-01-13 | 2013-08-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked integrated chips and methods of fabrication thereof |
CN102473644A (zh) * | 2009-07-31 | 2012-05-23 | 国立大学法人东北大学 | 半导体装置、半导体装置的制造方法、以及显示装置 |
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2011
- 2011-08-04 CN CN2011800389423A patent/CN103081077A/zh active Pending
- 2011-08-04 US US13/814,950 patent/US20130140700A1/en not_active Abandoned
- 2011-08-04 WO PCT/JP2011/067847 patent/WO2012020689A1/ja active Application Filing
- 2011-08-09 TW TW100128435A patent/TW201216411A/zh unknown
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TW201216411A (en) | 2012-04-16 |
JP2012038996A (ja) | 2012-02-23 |
WO2012020689A1 (ja) | 2012-02-16 |
CN103081077A (zh) | 2013-05-01 |
US20130140700A1 (en) | 2013-06-06 |
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