JP5400259B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP5400259B2
JP5400259B2 JP2005172077A JP2005172077A JP5400259B2 JP 5400259 B2 JP5400259 B2 JP 5400259B2 JP 2005172077 A JP2005172077 A JP 2005172077A JP 2005172077 A JP2005172077 A JP 2005172077A JP 5400259 B2 JP5400259 B2 JP 5400259B2
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JP
Japan
Prior art keywords
voltage
line
plate
memory device
bit line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005172077A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006172683A (ja
JP2006172683A5 (enExample
Inventor
知紀 関口
悟 秋山
理一郎 竹村
悟 半澤
一彦 梶谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PS4 Luxco SARL
Original Assignee
PS4 Luxco SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PS4 Luxco SARL filed Critical PS4 Luxco SARL
Priority to JP2005172077A priority Critical patent/JP5400259B2/ja
Priority to KR1020050109606A priority patent/KR20060056249A/ko
Priority to US11/280,170 priority patent/US7193884B2/en
Publication of JP2006172683A publication Critical patent/JP2006172683A/ja
Priority to US11/705,420 priority patent/US20070139995A1/en
Publication of JP2006172683A5 publication Critical patent/JP2006172683A5/ja
Application granted granted Critical
Publication of JP5400259B2 publication Critical patent/JP5400259B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/4013—Memory devices with multiple cells per bit, e.g. twin-cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP2005172077A 2004-11-19 2005-06-13 半導体記憶装置 Expired - Fee Related JP5400259B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005172077A JP5400259B2 (ja) 2004-11-19 2005-06-13 半導体記憶装置
KR1020050109606A KR20060056249A (ko) 2004-11-19 2005-11-16 반도체 기억장치
US11/280,170 US7193884B2 (en) 2004-11-19 2005-11-17 Semiconductor memory device
US11/705,420 US20070139995A1 (en) 2004-11-19 2007-02-13 Semiconductor memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004335886 2004-11-19
JP2004335886 2004-11-19
JP2005172077A JP5400259B2 (ja) 2004-11-19 2005-06-13 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2006172683A JP2006172683A (ja) 2006-06-29
JP2006172683A5 JP2006172683A5 (enExample) 2008-04-24
JP5400259B2 true JP5400259B2 (ja) 2014-01-29

Family

ID=36673238

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005172077A Expired - Fee Related JP5400259B2 (ja) 2004-11-19 2005-06-13 半導体記憶装置

Country Status (3)

Country Link
US (2) US7193884B2 (enExample)
JP (1) JP5400259B2 (enExample)
KR (1) KR20060056249A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100673901B1 (ko) * 2005-01-28 2007-01-25 주식회사 하이닉스반도체 저전압용 반도체 메모리 장치
US7767992B2 (en) * 2005-08-09 2010-08-03 Ovonyx, Inc. Multi-layer chalcogenide devices
US7375999B2 (en) * 2005-09-29 2008-05-20 Infineon Technologies Ag Low equalized sense-amp for twin cell DRAMs
KR100823706B1 (ko) * 2006-07-21 2008-04-21 삼성전자주식회사 반도체 장치의 신호 라인 구조물 및 이를 제조하는 방법
DE102006035076B4 (de) * 2006-07-28 2010-04-08 Qimonda Ag Integrierter Halbleiterspeicher und Verfahren zum Betreiben eines integrierten Halbleiterspeichers
KR100846392B1 (ko) * 2006-08-31 2008-07-15 주식회사 하이닉스반도체 반도체 메모리 장치
DE102007012902B3 (de) * 2007-03-19 2008-07-10 Qimonda Ag Kopplungsoptimierte Anschlusskonfiguration von Signalleitungen und Verstärkern
JP2008243238A (ja) * 2007-03-23 2008-10-09 Elpida Memory Inc 分子電池メモリ装置
DE102007023653A1 (de) * 2007-05-22 2008-11-27 Qimonda Ag Halbleiterspeicher und Verfahren zum Betreiben eines Halbleiterspeichers
US7759714B2 (en) * 2007-06-26 2010-07-20 Hitachi, Ltd. Semiconductor device
US7933141B2 (en) 2008-04-04 2011-04-26 Elpida Memory, Inc. Semiconductor memory device
TW201142869A (en) * 2010-02-09 2011-12-01 Samsung Electronics Co Ltd Memory device from which dummy edge memory block is removed
KR101223539B1 (ko) * 2010-12-15 2013-01-21 에스케이하이닉스 주식회사 반도체 집적 회로 장치
US8743591B2 (en) * 2011-04-26 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for driving the same
KR20120126437A (ko) * 2011-05-11 2012-11-21 에스케이하이닉스 주식회사 반도체 메모리 장치
KR20130057855A (ko) * 2011-11-24 2013-06-03 에스케이하이닉스 주식회사 반도체 메모리 장치
JP2014149884A (ja) 2013-01-31 2014-08-21 Micron Technology Inc 半導体装置
US20140219007A1 (en) * 2013-02-07 2014-08-07 Nvidia Corporation Dram with segmented page configuration
JP2014225566A (ja) * 2013-05-16 2014-12-04 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置
JP6359332B2 (ja) * 2014-05-09 2018-07-18 ルネサスエレクトロニクス株式会社 半導体装置
US20200105336A1 (en) * 2018-09-28 2020-04-02 Omnivision Technologies, Inc. Fast access dram with 2 cell-per-bit, common word line, architecture
US12051464B2 (en) * 2021-04-29 2024-07-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor memory devices with different word lines
US20250287608A1 (en) * 2024-03-08 2025-09-11 International Business Machines Corporation Pillar critical dimension reduction by isotropic plasma etching with high selectivity to silicon-containing antireflective coating and silicon nitride

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JP2765856B2 (ja) * 1988-06-17 1998-06-18 株式会社日立製作所 メモリ回路
JPH0334188A (ja) * 1989-06-30 1991-02-14 Hitachi Ltd メモリ回路
TW235363B (enExample) * 1993-01-25 1994-12-01 Hitachi Seisakusyo Kk
JPH08115595A (ja) * 1994-10-14 1996-05-07 Matsushita Electric Ind Co Ltd メモリ装置
US5825609A (en) * 1996-04-23 1998-10-20 International Business Machines Corporation Compound electrode stack capacitor
KR100224702B1 (ko) * 1997-06-17 1999-10-15 윤종용 기준 셀 커패시터로 선형 커패시터를 사용하는 강유전체 메모리소자, 그에 저장된 정보를 읽는 방법 및 그 제조방법
JPH11260054A (ja) * 1998-01-08 1999-09-24 Mitsubishi Electric Corp ダイナミック型半導体記憶装置
JP3617615B2 (ja) * 1999-11-08 2005-02-09 シャープ株式会社 強誘電体記憶装置
JP2001308288A (ja) * 2000-04-27 2001-11-02 Sharp Corp 半導体装置の製造方法および半導体装置
JP3856424B2 (ja) * 2000-12-25 2006-12-13 株式会社東芝 半導体記憶装置
US6545923B2 (en) * 2001-05-04 2003-04-08 Samsung Electronics Co., Ltd. Negatively biased word line scheme for a semiconductor memory device
JP2003092364A (ja) * 2001-05-21 2003-03-28 Mitsubishi Electric Corp 半導体記憶装置
JP2004213722A (ja) * 2002-12-27 2004-07-29 Matsushita Electric Ind Co Ltd 半導体記憶装置及び半導体集積回路装置

Also Published As

Publication number Publication date
US20060158924A1 (en) 2006-07-20
US20070139995A1 (en) 2007-06-21
KR20060056249A (ko) 2006-05-24
JP2006172683A (ja) 2006-06-29
US7193884B2 (en) 2007-03-20

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