JP5394596B2 - 透過型電子顕微鏡用二軸傾斜のインサイチュ強度、電気的特性の総合試験試料ホルダー - Google Patents
透過型電子顕微鏡用二軸傾斜のインサイチュ強度、電気的特性の総合試験試料ホルダー Download PDFInfo
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- 230000005540 biological transmission Effects 0.000 title claims description 32
- 238000012360 testing method Methods 0.000 title claims description 27
- 238000011065 in-situ storage Methods 0.000 title claims description 24
- 238000005516 engineering process Methods 0.000 claims description 16
- 238000010894 electron beam technology Methods 0.000 claims description 13
- 238000005259 measurement Methods 0.000 claims description 9
- 238000013461 design Methods 0.000 claims description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000463 material Substances 0.000 description 17
- 239000002086 nanomaterial Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000006399 behavior Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 238000003917 TEM image Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910002110 ceramic alloy Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002524 electron diffraction data Methods 0.000 description 1
- 230000010429 evolutionary process Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000009347 mechanical transmission Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/08—Investigating strength properties of solid materials by application of mechanical stress by applying steady tensile or compressive forces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/02—Details not specific for a particular testing method
- G01N2203/026—Specifications of the specimen
- G01N2203/0286—Miniature specimen; Testing on microregions of a specimen
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/307—Accessories, mechanical or electrical features cuvettes-sample holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20207—Tilt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/206—Modifying objects while observing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/206—Modifying objects while observing
- H01J2237/2062—Mechanical constraints
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
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Description
2 試料ホルダー
3 試料ホルダーの先端
4 センサー載台
5 支持軸
6 導線
7 一列の電極I
8 電極継ぎ口
9 Y軸回転ドライブ
10 凹み
11 センサー
12 試料
13 スルーホールI
14 一列の電極II
15 シート
16 一列の電極III
17 スルーホールII
18 応力かけ部品
19 応力測定部品
20 テスト電極
Claims (4)
- 透過型電子顕微鏡用の二軸傾斜インサイチュー強度・電気特性の総合試験試料ホルダーであって、
前記試料ホルダーは、グリップ(1)、試料ホルダー(2)、試料ホルダーの先端部(3)を備え、センサー載台(4)が前記試料ホルダーの先端部(3)の両内側にある二つの支持軸(5)で前記試料ホルダー先端部(3)上に固定され、導線I(6)が電子顕微鏡の外部から前記試料ホルダー(2)を通って入り、前記試料ホルダーの先端(3)の両側の壁に対称的に分布し、そこにある一列の電極I(7)と繋がっており、前記導線I(6)のもう一方の端は前記グリップ(1)の上の電極継ぎ口(8)に繋がり、該電極継ぎ口(8)を通して電子顕微鏡の外部の設備と繋がっており、前記一列の電極I(7)は支持軸(5)を中心線として前記試料ホルダーの先端(3)の両側の壁に対称的に分布しており、前記センサー載台(4)の回転がその後部にあるY軸の回転ドライブ(9)で駆動され、前記センサー載台(4)の上に前記支持軸(5)を中心線として凹み(10)が一つ形成されており、前記凹み(10)は一つのスルーホールであり、センサー(11)がその下から支持へりで支えられており、前記センサー(11)には厚みがあるため、前記凹み(10)に入れると、上の表面がTEM電子ビーム集束の中心と同じ平面の中にあるようになり、
前記センサー(11)を前記センサー載台(4)の前記凹み(10)に入れてから、シート(15)を前記センサー(11)に乗せると、一列の電極III(16)の中で、シート(15)の下の表面にある電極は前記センサー(11)の上にある一列の電極II(14)と一対一対応で繋がることが、正確な設計で確保され、前記シート(15)を前記センサー載台(4)上に固定すると、一列の電極III(16)の中の、シート(15)の上の表面にある電極は試料ホルダーの先端(3)の両側にある一列の電極I(7)とが導線で一対一対応で繋がり、
前記シート(15)の上にスルーホールII(17)があるため、電子ビームはシートを通して前記センサー(11)の試料(12)の上に集束し、前記センサー(11)の上に一列の前記電極II(14)、応力かけ部品(18)、応力測定部品(19)、電極(20)および研究対象となる試料(12)があり、前記応力かけ部品(18)と前記応力測定部品(19)は前記センサー(11)の上に並列に並び、一列の前記電極II(14)と平行し、二列の前記電極II(14)に挟まれており、前記応力かけ部品(18)と前記応力測定部品(19)の間に電子ビームの通り道としての隙間があり、前記応力かけ部品(18)と前記応力測定部品(19)の上に電極(20)が二つ取り付けられており、前記試料(12)の両端はそれぞれ前記応力かけ部品(18)と前記応力測定部品(19)の上にある前記電極(20)に乗せられ、及び、前記電子ビームの通り道に横たわっており、前記応力かけ部品(18)、前記応力測定部品(19)、前記電極(20)の電気回路のいずれもセンサー(11)の上にある一列の電極III(14)と対応して導線で繋がっており、前記応力測定部品(19)は商業的に成熟しているカンチレバーの技術を用い、カンチレバーの構造は正確に設計されており、さらにカンチレバーの上に精密な応力の信号の測定ができる構造と装置を備えており、
前記応力測定部品(19)の側面に、精確なたわみ変位を、測定しかつ外部の試験設備によって応力の信号に変えるホイートストンブリッジシステムが取り付けられた
ことを特徴とする、試料ホルダー。 - 前記導線はいずれも外部に絶縁層を有する伝導性材料であることを特徴とする、請求項1に記載の試料ホルダー。
- 前記試料ホルダーの先端部(3)、センサー載台(4)及びシート(15)の表面のいずれにも絶縁体層が分布され、該絶縁体層の材料は二酸化ケイ素、炭化ケイ素、窒化ケイ素または酸化ハフニウムによって構成されていることを特徴とする、請求項1に記載の試料ホルダー。
- 前記電極列I(7)、電極列II(14)、電極列III(16)はRh、Pd、Rh/Au、Ti/Au、W/Pt、Cr/Pt、Ni/Pt、AgまたはCuを含むことを特徴とする、請求項1に記載の試料ホルダー。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011101453058A CN102262996B (zh) | 2011-05-31 | 2011-05-31 | 透射电镜用双轴倾转的原位力、电性能综合测试样品杆 |
CN201110145305.8 | 2011-05-31 | ||
PCT/CN2011/077033 WO2012162929A1 (zh) | 2011-05-31 | 2011-07-11 | 透射电镜用双轴倾转的原位力、电性能综合测试样品杆 |
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JP2013529368A JP2013529368A (ja) | 2013-07-18 |
JP5394596B2 true JP5394596B2 (ja) | 2014-01-22 |
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JP2013516990A Active JP5394596B2 (ja) | 2011-05-31 | 2011-07-11 | 透過型電子顕微鏡用二軸傾斜のインサイチュ強度、電気的特性の総合試験試料ホルダー |
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US (1) | US8569714B2 (ja) |
JP (1) | JP5394596B2 (ja) |
CN (1) | CN102262996B (ja) |
WO (1) | WO2012162929A1 (ja) |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5826760B2 (ja) * | 2009-11-27 | 2015-12-02 | ハイジトロン, インク.Hysitron, Inc. | ミクロ電気機械ヒータ |
EP2458354A1 (en) * | 2010-11-24 | 2012-05-30 | Fei Company | Method of measuring the temperature of a sample carrier in a charged particle-optical apparatus |
US9476816B2 (en) | 2011-11-14 | 2016-10-25 | Hysitron, Inc. | Probe tip heating assembly |
WO2013082145A1 (en) | 2011-11-28 | 2013-06-06 | Yunje Oh | High temperature heating system |
JP5963955B2 (ja) | 2012-06-13 | 2016-08-03 | ハイジトロン, インク.Hysitron, Inc. | ミクロンまたはナノスケールでの機械的試験用環境コンディショニングアセンブリ |
JP5860355B2 (ja) * | 2012-07-25 | 2016-02-16 | 本田技研工業株式会社 | 電子顕微鏡用の試験片及びその製造方法 |
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USD794816S1 (en) * | 2013-10-24 | 2017-08-15 | Hitachi High-Technologies Corporation | Sample holder for an electron microscope |
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WO2016052776A1 (ko) * | 2014-09-30 | 2016-04-07 | 한국기초과학지원연구원 | 간단한 구조의 3축구동 전자현미경 홀더 |
CN104637765B (zh) * | 2015-02-15 | 2016-08-24 | 北京工业大学 | 一种透射电子显微镜用双轴倾转样品台 |
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US10431417B2 (en) * | 2016-04-13 | 2019-10-01 | Hitachi High-Technologies Corporation | Charged particle beam device and sample holder |
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US10103001B2 (en) * | 2016-04-17 | 2018-10-16 | Beijing University Of Technology | Double-tilt in-situ mechanical sample holder for TEM based on piezoelectric ceramic drive |
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CN108198740A (zh) * | 2018-01-08 | 2018-06-22 | 中国科学院金属研究所 | 一种透射电子显微镜用原位电学样品杆系统 |
US11415496B2 (en) * | 2018-02-08 | 2022-08-16 | Wilburn Whittington | System to control an actuator |
CN109037014B (zh) * | 2018-08-20 | 2020-07-07 | 镇江乐华电子科技有限公司 | 微拉伸机构及其使用方法 |
CN110954759B (zh) * | 2018-09-27 | 2022-08-02 | 湖南嘉业达电子有限公司 | 压电相变点在生产过程中的评测装置 |
CN111261478B (zh) * | 2018-11-30 | 2021-10-26 | 浙江大学 | 具有光纤的多自由度样品杆 |
CN109270099B (zh) * | 2018-11-30 | 2024-04-19 | 复旦大学 | 一种直流至微波频率的透射电镜原位高频电学测试芯片 |
CN111257358B (zh) * | 2018-11-30 | 2021-08-31 | 浙江大学 | 使用多自由度样品杆进行样品原位动态三维重构的方法 |
CN109665490B (zh) * | 2018-12-29 | 2020-09-25 | 哈尔滨工业大学 | 一种纳米连接装置和纳米线连接方法 |
CN109682711B (zh) * | 2019-01-24 | 2021-03-23 | 中国科学院上海微系统与信息技术研究所 | 用于tem构效关联直接原位表征的芯片及其制作方法 |
US10976238B2 (en) * | 2019-01-30 | 2021-04-13 | Xi'an Jiaotong University | Measurement apparatus for micro- and nano-scale material and measurement method thereof |
CN109856168A (zh) * | 2019-02-02 | 2019-06-07 | 安徽泽攸科技有限公司 | 一种用于电子显微镜双轴倾转原位样品杆 |
CN109613035B (zh) * | 2019-02-22 | 2021-03-26 | 安徽泽攸科技有限公司 | 一种用于电子显微镜的样品支撑体及样品杆 |
CN109883828B (zh) * | 2019-02-28 | 2024-06-25 | 北京工业大学 | 透射电子显微镜原位高温定量化力学实验台 |
DE102019208661A1 (de) | 2019-06-13 | 2020-12-17 | Carl Zeiss Microscopy Gmbh | Verfahren zum Betrieb eines Teilchenstrahlgeräts und Teilchenstrahlgerät zum Ausführen des Verfahrens |
CN110441334B (zh) * | 2019-07-11 | 2022-08-02 | 安徽泽攸科技有限公司 | 一种多场原位透射电子显微镜样品杆 |
US11295929B2 (en) * | 2019-08-01 | 2022-04-05 | ZoNexus LLC | Sample holder for electron microscopy |
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CN112345412A (zh) * | 2020-10-23 | 2021-02-09 | 大连理工大学 | 一种纳米气泡扩散系数原位测量方法 |
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CN113125475B (zh) * | 2021-03-19 | 2022-04-01 | 复旦大学 | 一种在透射电子显微镜中原位施加应力的方法 |
CN113758949B (zh) * | 2021-09-27 | 2024-04-12 | 南开大学 | 一种应用于透射电镜下原位样品杆研究电池材料的双倾tip端 |
CN114199903B (zh) * | 2021-10-26 | 2024-04-05 | 清华大学 | 热电力学一体化的透射电镜双倾原位样品杆 |
DE102021131899B3 (de) | 2021-12-03 | 2023-03-23 | Carl Zeiss Microscopy Gmbh | Analysesystem, Analyseverfahren, Computerprogrammprodukt und Probenhalter |
CN115020847B (zh) * | 2022-06-01 | 2024-07-16 | 南开大学 | 一种应用于透射电镜样品杆基于电池材料研究的微电池结构 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11250850A (ja) * | 1998-03-02 | 1999-09-17 | Hitachi Ltd | 走査電子顕微鏡及び顕微方法並びに対話型入力装置 |
JP2002319365A (ja) * | 2001-04-23 | 2002-10-31 | Jeol Ltd | ステージ及びfib試料作成装置 |
KR100408415B1 (ko) * | 2001-06-20 | 2003-12-06 | 삼성전자주식회사 | 시료 홀더, 시료 홀더 내에 시료 고정을 위한 보조장치 및이들을 이용한 시료 고정방법 |
US6967335B1 (en) * | 2002-06-17 | 2005-11-22 | Zyvex Corporation | Manipulation system for manipulating a sample under study with a microscope |
CN100368792C (zh) * | 2004-08-02 | 2008-02-13 | 中国科学院物理研究所 | 原位微区结构分析与性质测试联合装置 |
JP4448932B2 (ja) * | 2004-10-04 | 2010-04-14 | 学校法人立命館 | ナノワイヤ引張試験デバイス及びそれを用いた試験方法 |
JP4616701B2 (ja) | 2005-05-30 | 2011-01-19 | 日本電子株式会社 | 電子顕微鏡の試料ホルダ |
JP4923716B2 (ja) * | 2006-05-11 | 2012-04-25 | 株式会社日立製作所 | 試料分析装置および試料分析方法 |
JP5139772B2 (ja) * | 2007-11-07 | 2013-02-06 | 日本電子株式会社 | 隔膜型ガス雰囲気試料ホルダ |
CN101275895B (zh) * | 2008-01-04 | 2010-09-29 | 中国科学院物理研究所 | 一种在透射电子显微镜中原位测量纳电子器件性质的样品台系统 |
EP2257963A2 (en) * | 2008-03-15 | 2010-12-08 | The University Of Sheffield | Specimen holder assembly |
JP2008262921A (ja) * | 2008-07-14 | 2008-10-30 | Hitachi Ltd | 3次元構造観察用試料作製装置、電子顕微鏡及びその方法 |
JP5268567B2 (ja) * | 2008-10-31 | 2013-08-21 | 日本電子株式会社 | 試料ホルダ及びこれを用いた試料の観測方法 |
JP5502309B2 (ja) * | 2008-11-04 | 2014-05-28 | 日本電子株式会社 | 透過型電子顕微鏡 |
CN101464244B (zh) * | 2008-12-19 | 2011-05-11 | 北京工业大学 | 应力状态下纳米材料力电性能与显微结构测量装置和方法 |
CN101837943B (zh) * | 2009-10-30 | 2011-11-09 | 北京工业大学 | 定量测试力电性能与显微结构的传感器及制作方法 |
CN202134501U (zh) * | 2011-05-31 | 2012-02-01 | 北京工业大学 | 透射电镜用双轴倾转的原位力、电性能综合测试样品杆 |
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