JP5389464B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 82
- 238000000034 method Methods 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 87
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 50
- 229910052710 silicon Inorganic materials 0.000 description 50
- 239000010703 silicon Substances 0.000 description 50
- 230000015572 biosynthetic process Effects 0.000 description 13
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L24/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/2405—Shape
- H01L2224/24051—Conformal with the semiconductor or solid-state device
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/24227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Description
まず、図5(a)に示すように、シリコン基板10において、所定の領域にビアホール101を形成する。
ル101に埋め込まれた導電層102が露出するまで研磨を行なう。
更に、図6(d)に示すように、コンタクトホール161を介して導電層102に接続された電極17を形成する。これにより、シリコン基板10の上面に形成されたデバイス11に対する電極17を、シリコン基板10の裏面側に形成することができる。
本発明においては、裏面電極は、開孔部を介して露出した第1の基板に対して導電性材料の選択成長により形成する。これにより、リソグラフィ技術を用いることなく、自己整合的に裏面電極を形成することができる。
本発明においては、第2の基板のエッチングには、基板の材料のエッチング速度に対して、第1の絶縁層のエッチング速度が遅いエッチング方法を用いる。これにより、第1の絶縁層をストッパとして機能させることができる。
次に、TSVアイランドを形成する(ステップS4)。具体的には、図2(d)に示すように、薄膜化されたシリコン基板21において、所定の領域を囲み、酸化層22に到達するビアホール211を形成する。ここでは、シリコン基板21を透過する光(例えば赤外光)を用いて窓領域221を特定しながら、ビアホール211を形成する。これにより、ビアホール211に囲まれたアイランド領域212が形成される。
次に、バックコンタクトを形成する(ステップS7)。具体的には、図3(c)に示すように、デバイス24と配線層26を保護するための保護層27を形成する。そして、図3(d)に示すように、裏面のシリコン基板20を酸化層22に到達するまで切削・研磨する。本実施形態では、シリコン材料に対して異方性を有するエッチング溶液を用いて加工を行なう。本実施形態では、TMAH(tetramethyl-ammonium-hydroxide)を用いる。このTMAHにおいては、シリコン結晶の〔111〕面はほとんどエッチングされないが、〔100〕面のエッチング速度は約9000〔μm/分〕になる。また、酸化膜のエッチング速度も低く、〔100〕面との関係においては、エッチング選択比として約5000を得ることができる。従って、酸化膜をエッチングストッパとして用いることができる。この場合、酸化層22に形成された窓領域221が露出することになる。
・ 上記実施形態では、埋め込まれた酸化層22が形成された基板上に、デバイス24を形成する。そして、裏面のシリコン基板20を酸化層22に到達するまで切削・研磨する。この場合、半導体材料と絶縁材料とにおいて選択的にエッチングを行なうことができる選択エッチングを用いることにより、裏面のシリコン基板20の切削・研磨を的確に停止させることができる。
層22を用いることにより良好な絶縁を実現することができる。
○ 上記実施形態では、SOI基板の裏面側において、通常のシリコン基板20を用いた。このシリコン基板20は最終的に切削・研磨されるため、単結晶基板を用いる必要はなく、例えば多結晶基板を用いることも可能である。
次に、図4(c)に示すように、形成した貫通孔215に金属層30を埋め込む。ここでは、配線層26を核とする金属選択成長を行なう。
Claims (5)
- 開孔部を備えた第1の絶縁層を設けた第1の基板と第2の基板とを、前記絶縁層を介して接合した積層基板を生成する工程と、
前記第1の基板において、前記開孔部に接続する領域の周囲に前記第1の絶縁層に到達する第2の絶縁層を形成する工程と、
前記第1の基板上に素子を形成する工程と、
前記第2の基板をエッチングすることにより、前記第1の絶縁層及び開孔部を露出させ、この開孔部を介して前記素子に導通させた裏面電極を形成する工程と
を備えたことを特徴とする半導体装置の製造方法。 - 前記第1の絶縁層は酸化膜であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記裏面電極は、前記開孔部を介して露出した第1の基板に対して導電性材料の選択成長により形成することを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記第2の絶縁層により囲まれた領域に貫通孔を設け、前記貫通孔に導電性材料を埋め込む工程を更に備えたことを特徴とする請求項1から3のいずれか一つに記載の半導体装置の製造方法。
- 前記第2の基板のエッチングには、前記基板の材料のエッチング速度に対して、前記第1の絶縁層のエッチング速度が遅いエッチング方法を用いることを特徴とする請求項1から4のいずれか一つに記載の半導体装置の製造方法。
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US12/687,846 US8017497B2 (en) | 2009-02-10 | 2010-01-14 | Method for manufacturing semiconductor |
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JP5766518B2 (ja) * | 2011-06-07 | 2015-08-19 | 株式会社ディスコ | 電極が埋設されたウエーハの加工方法 |
KR101761818B1 (ko) | 2011-08-23 | 2017-08-04 | 삼성전자주식회사 | 전기음향 변환기 및 그 제조 방법 |
KR102018885B1 (ko) | 2012-12-20 | 2019-09-05 | 삼성전자주식회사 | 관통전극을 갖는 반도체 소자 및 그 제조방법 |
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JPH0582634A (ja) * | 1991-06-26 | 1993-04-02 | Fuji Electric Co Ltd | 複合化半導体基板の製造方法 |
GB9305448D0 (en) | 1993-03-17 | 1993-05-05 | British Tech Group | Semiconductor structure and method of manufacturing same |
US6124179A (en) * | 1996-09-05 | 2000-09-26 | Adamic, Jr.; Fred W. | Inverted dielectric isolation process |
US6927146B2 (en) * | 2003-06-17 | 2005-08-09 | Intel Corporation | Chemical thinning of epitaxial silicon layer over buried oxide |
JP4069028B2 (ja) * | 2003-07-16 | 2008-03-26 | 株式会社フジクラ | 貫通電極付き基板、その製造方法及び電子デバイス |
EP1517166B1 (en) * | 2003-09-15 | 2015-10-21 | Nuvotronics, LLC | Device package and methods for the fabrication and testing thereof |
US7545075B2 (en) * | 2004-06-04 | 2009-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Capacitive micromachined ultrasonic transducer array with through-substrate electrical connection and method of fabricating same |
JP4561307B2 (ja) * | 2004-10-20 | 2010-10-13 | ソニー株式会社 | 配線基板の製造方法および半導体装置の製造方法 |
US7781886B2 (en) * | 2005-06-14 | 2010-08-24 | John Trezza | Electronic chip contact structure |
US7946331B2 (en) * | 2005-06-14 | 2011-05-24 | Cufer Asset Ltd. L.L.C. | Pin-type chip tooling |
US7767493B2 (en) * | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
US7233048B2 (en) * | 2005-08-26 | 2007-06-19 | Innovative Micro Technology | MEMS device trench plating process and apparatus for through hole vias |
DE102005046624B3 (de) * | 2005-09-29 | 2007-03-22 | Atmel Germany Gmbh | Verfahren zur Herstellung einer Halbleiteranordnung |
US7626257B2 (en) * | 2006-01-18 | 2009-12-01 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
KR100753415B1 (ko) * | 2006-03-17 | 2007-08-30 | 주식회사 하이닉스반도체 | 스택 패키지 |
JP5194537B2 (ja) * | 2007-04-23 | 2013-05-08 | 株式会社デンソー | 半導体装置およびその製造方法 |
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