JP5385141B2 - 水に可溶性酸化剤を使用する炭化ケイ素の研磨方法 - Google Patents

水に可溶性酸化剤を使用する炭化ケイ素の研磨方法 Download PDF

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Publication number
JP5385141B2
JP5385141B2 JP2009527375A JP2009527375A JP5385141B2 JP 5385141 B2 JP5385141 B2 JP 5385141B2 JP 2009527375 A JP2009527375 A JP 2009527375A JP 2009527375 A JP2009527375 A JP 2009527375A JP 5385141 B2 JP5385141 B2 JP 5385141B2
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JP
Japan
Prior art keywords
liquid carrier
substrate
silicon carbide
suspended
polishing composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2009527375A
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English (en)
Japanese (ja)
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JP2010503232A5 (enExample
JP2010503232A (ja
Inventor
デサイ，ムケシュ
モーゲンボーグ，ケビン
カーター，フィリップ
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CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
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Publication date
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Publication of JP2010503232A5 publication Critical patent/JP2010503232A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009527375A 2006-09-05 2007-09-04 水に可溶性酸化剤を使用する炭化ケイ素の研磨方法 Expired - Fee Related JP5385141B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/515,546 2006-09-05
US11/515,546 US7678700B2 (en) 2006-09-05 2006-09-05 Silicon carbide polishing method utilizing water-soluble oxidizers
PCT/US2007/019274 WO2008030420A1 (en) 2006-09-05 2007-09-04 Silicon carbide polishing method utilizing water-soluble oxidizers

Publications (3)

Publication Number Publication Date
JP2010503232A JP2010503232A (ja) 2010-01-28
JP2010503232A5 JP2010503232A5 (enExample) 2010-10-21
JP5385141B2 true JP5385141B2 (ja) 2014-01-08

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Family Applications (1)

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JP2009527375A Expired - Fee Related JP5385141B2 (ja) 2006-09-05 2007-09-04 水に可溶性酸化剤を使用する炭化ケイ素の研磨方法

Country Status (8)

Country Link
US (2) US7678700B2 (enExample)
JP (1) JP5385141B2 (enExample)
KR (1) KR101371870B1 (enExample)
CN (1) CN101512732B (enExample)
MY (1) MY145601A (enExample)
SG (1) SG174764A1 (enExample)
TW (1) TWI378142B (enExample)
WO (1) WO2008030420A1 (enExample)

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CN111518478B (zh) * 2020-06-15 2022-04-05 宁波日晟新材料有限公司 一种碳化硅抛光液及其应用
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Also Published As

Publication number Publication date
US20080153293A1 (en) 2008-06-26
WO2008030420A1 (en) 2008-03-13
US7678700B2 (en) 2010-03-16
KR20090051263A (ko) 2009-05-21
CN101512732B (zh) 2011-05-18
TW200821375A (en) 2008-05-16
CN101512732A (zh) 2009-08-19
KR101371870B1 (ko) 2014-03-07
SG174764A1 (en) 2011-10-28
US20080057713A1 (en) 2008-03-06
MY145601A (en) 2012-03-15
TWI378142B (en) 2012-12-01
JP2010503232A (ja) 2010-01-28

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