JP5367523B2 - 配線基板及び配線基板の製造方法 - Google Patents

配線基板及び配線基板の製造方法 Download PDF

Info

Publication number
JP5367523B2
JP5367523B2 JP2009221078A JP2009221078A JP5367523B2 JP 5367523 B2 JP5367523 B2 JP 5367523B2 JP 2009221078 A JP2009221078 A JP 2009221078A JP 2009221078 A JP2009221078 A JP 2009221078A JP 5367523 B2 JP5367523 B2 JP 5367523B2
Authority
JP
Japan
Prior art keywords
layer
wiring
wiring board
organic substrate
laminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009221078A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011071315A (ja
JP2011071315A5 (https=
Inventor
昌宏 春原
啓介 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2009221078A priority Critical patent/JP5367523B2/ja
Priority to US12/884,271 priority patent/US8212365B2/en
Publication of JP2011071315A publication Critical patent/JP2011071315A/ja
Publication of JP2011071315A5 publication Critical patent/JP2011071315A5/ja
Application granted granted Critical
Publication of JP5367523B2 publication Critical patent/JP5367523B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/685Shapes or dispositions thereof comprising multiple insulating layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69Insulating materials thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/63Vias, e.g. via plugs
    • H10W70/635Through-vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
JP2009221078A 2009-09-25 2009-09-25 配線基板及び配線基板の製造方法 Active JP5367523B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009221078A JP5367523B2 (ja) 2009-09-25 2009-09-25 配線基板及び配線基板の製造方法
US12/884,271 US8212365B2 (en) 2009-09-25 2010-09-17 Printed wiring board and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009221078A JP5367523B2 (ja) 2009-09-25 2009-09-25 配線基板及び配線基板の製造方法

Publications (3)

Publication Number Publication Date
JP2011071315A JP2011071315A (ja) 2011-04-07
JP2011071315A5 JP2011071315A5 (https=) 2012-08-23
JP5367523B2 true JP5367523B2 (ja) 2013-12-11

Family

ID=43779399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009221078A Active JP5367523B2 (ja) 2009-09-25 2009-09-25 配線基板及び配線基板の製造方法

Country Status (2)

Country Link
US (1) US8212365B2 (https=)
JP (1) JP5367523B2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013000995A (ja) * 2011-06-17 2013-01-07 Panasonic Corp 金属張積層板、及びプリント配線板
JP5833398B2 (ja) * 2011-06-27 2015-12-16 新光電気工業株式会社 配線基板及びその製造方法、半導体装置
JP5561254B2 (ja) * 2011-07-29 2014-07-30 株式会社村田製作所 回路モジュール及び複合回路モジュール
US8780576B2 (en) 2011-09-14 2014-07-15 Invensas Corporation Low CTE interposer
US8836478B2 (en) * 2011-09-25 2014-09-16 Authentec, Inc. Electronic device including finger sensor and related methods
JP5778557B2 (ja) * 2011-11-28 2015-09-16 新光電気工業株式会社 半導体装置の製造方法、半導体装置、及び半導体素子
JP2013123907A (ja) * 2011-12-16 2013-06-24 Panasonic Corp 金属張積層板、及びプリント配線板
DE112011105967T5 (de) * 2011-12-20 2014-09-25 Intel Corporation Mikroelektronisches Gehäuse und gestapelte mikroelektronische Baugruppe und Rechensystem mit denselben
JP2013243263A (ja) * 2012-05-21 2013-12-05 Internatl Business Mach Corp <Ibm> 3次元積層パッケージにおける電力供給と放熱(冷却)との両立
TWI543283B (zh) * 2014-07-18 2016-07-21 矽品精密工業股份有限公司 中介基板之製法
KR20170067426A (ko) * 2015-12-08 2017-06-16 앰코 테크놀로지 코리아 주식회사 반도체 패키지의 제조 방법 및 이를 이용한 반도체 패키지
US10672695B2 (en) * 2015-12-23 2020-06-02 Intel Corporation Multi-layer molded substrate with graded CTE
DE102020205686A1 (de) 2020-05-06 2021-11-11 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronikvorrichtung
JPWO2024154790A1 (https=) * 2023-01-19 2024-07-25

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888247A (en) * 1986-08-27 1989-12-19 General Electric Company Low-thermal-expansion, heat conducting laminates having layers of metal and reinforced polymer matrix composite
JP2574902B2 (ja) 1989-09-20 1997-01-22 株式会社日立製作所 半導体装置
JP2783359B2 (ja) * 1994-11-16 1998-08-06 日本ピラー工業株式会社 フッ素樹脂多層回路基板
JPH08167630A (ja) * 1994-12-15 1996-06-25 Hitachi Ltd チップ接続構造
US5888631A (en) * 1996-11-08 1999-03-30 W. L. Gore & Associates, Inc. Method for minimizing warp in the production of electronic assemblies
MY139405A (en) * 1998-09-28 2009-09-30 Ibiden Co Ltd Printed circuit board and method for its production
US6333857B1 (en) * 1998-12-25 2001-12-25 Ngk Spark Plug Co., Ltd. Printing wiring board, core substrate, and method for fabricating the core substrate
US7245647B2 (en) * 1999-10-28 2007-07-17 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode
US6975663B2 (en) * 2001-02-26 2005-12-13 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode
TW512653B (en) * 1999-11-26 2002-12-01 Ibiden Co Ltd Multilayer circuit board and semiconductor device
KR20020077917A (ko) * 2000-02-22 2002-10-14 피피지 인더스트리즈 오하이오, 인코포레이티드 전자 지지물 및 그 내부에 구멍을 형성하기 위한 방법 및장치
US6734540B2 (en) * 2000-10-11 2004-05-11 Altera Corporation Semiconductor package with stress inhibiting intermediate mounting substrate
JP3858660B2 (ja) * 2001-10-10 2006-12-20 株式会社日立製作所 樹脂の熱抵抗測定方法
JP4203435B2 (ja) * 2003-05-16 2009-01-07 日本特殊陶業株式会社 多層樹脂配線基板
JP2004356569A (ja) * 2003-05-30 2004-12-16 Shinko Electric Ind Co Ltd 半導体装置用パッケージ
JP2005050878A (ja) * 2003-07-29 2005-02-24 Kyocera Corp 積層型配線基板および電気装置並びにその実装構造
JP2005050879A (ja) * 2003-07-29 2005-02-24 Kyocera Corp 積層型配線基板および電気装置並びにその実装構造
US8119920B2 (en) * 2004-02-04 2012-02-21 Ibiden Co., Ltd. Multilayer printed wiring board
TWI280657B (en) * 2004-05-28 2007-05-01 Sanyo Electric Co Circuit device
JP2006253631A (ja) * 2005-02-14 2006-09-21 Fujitsu Ltd 半導体装置及びその製造方法、キャパシタ構造体及びその製造方法
US7253518B2 (en) * 2005-06-15 2007-08-07 Endicott Interconnect Technologies, Inc. Wirebond electronic package with enhanced chip pad design, method of making same, and information handling system utilizing same
US7932471B2 (en) * 2005-08-05 2011-04-26 Ngk Spark Plug Co., Ltd. Capacitor for incorporation in wiring board, wiring board, method of manufacturing wiring board, and ceramic chip for embedment
JP4452222B2 (ja) * 2005-09-07 2010-04-21 新光電気工業株式会社 多層配線基板及びその製造方法
JP5089880B2 (ja) * 2005-11-30 2012-12-05 日本特殊陶業株式会社 配線基板内蔵用キャパシタ、キャパシタ内蔵配線基板及びその製造方法
US20070126085A1 (en) * 2005-12-02 2007-06-07 Nec Electronics Corporation Semiconductor device and method of manufacturing the same
US8279131B2 (en) * 2006-09-21 2012-10-02 Raytheon Company Panel array
JP5068060B2 (ja) * 2006-10-30 2012-11-07 新光電気工業株式会社 半導体パッケージおよびその製造方法
JPWO2008065821A1 (ja) * 2006-11-27 2010-03-04 株式会社ニコン 光学素子、これを用いた露光装置、及びデバイス製造方法
JP5311609B2 (ja) * 2007-10-30 2013-10-09 新光電気工業株式会社 シリコンインターポーザの製造方法およびシリコンインターポーザと、これを用いた半導体装置用パッケージおよび半導体装置
JP5079456B2 (ja) * 2007-11-06 2012-11-21 新光電気工業株式会社 半導体装置及びその製造方法
JP4932744B2 (ja) * 2008-01-09 2012-05-16 新光電気工業株式会社 配線基板及びその製造方法並びに電子部品装置及びその製造方法
JP5000540B2 (ja) * 2008-01-31 2012-08-15 新光電気工業株式会社 スイッチング機能付配線基板
JP4981712B2 (ja) * 2008-02-29 2012-07-25 新光電気工業株式会社 配線基板の製造方法及び半導体パッケージの製造方法
WO2009149243A1 (en) * 2008-06-04 2009-12-10 G Patel A monitoring system based on etching of metals
JP5032456B2 (ja) * 2008-08-12 2012-09-26 新光電気工業株式会社 半導体装置、インターポーザ、及びそれらの製造方法
US9226391B2 (en) * 2009-01-27 2015-12-29 Littelfuse, Inc. Substrates having voltage switchable dielectric materials
US8989531B2 (en) * 2009-03-30 2015-03-24 Kyocera Corporation Optical-electrical wiring board and optical module

Also Published As

Publication number Publication date
JP2011071315A (ja) 2011-04-07
US20110074046A1 (en) 2011-03-31
US8212365B2 (en) 2012-07-03

Similar Documents

Publication Publication Date Title
JP5367523B2 (ja) 配線基板及び配線基板の製造方法
JP4343044B2 (ja) インターポーザ及びその製造方法並びに半導体装置
US9226382B2 (en) Printed wiring board
JP4361826B2 (ja) 半導体装置
JP4298559B2 (ja) 電子部品実装構造及びその製造方法
US9119319B2 (en) Wiring board, semiconductor device, and method for manufacturing wiring board
JP5808586B2 (ja) インターポーザの製造方法
TWI436717B (zh) 可內設功能元件之電路板及其製造方法
JP6083152B2 (ja) 配線基板及び配線基板の製造方法
US9054082B2 (en) Semiconductor package, semiconductor device, and method for manufacturing semiconductor package
CN104428892B (zh) 用于基板核心层的方法和装置
US20080128865A1 (en) Carrier structure embedded with semiconductor chip and method for fabricating thereof
JP2013030593A (ja) 半導体装置、該半導体装置を垂直に積層した半導体モジュール構造及びその製造方法
JP2009141041A (ja) 電子部品実装用パッケージ
JPWO2007126090A1 (ja) 回路基板、電子デバイス装置及び回路基板の製造方法
US8698303B2 (en) Substrate for mounting semiconductor, semiconductor device and method for manufacturing semiconductor device
JP2013243345A5 (https=)
JP2016063130A (ja) プリント配線板および半導体パッケージ
JP2009252942A (ja) 部品内蔵配線板、部品内蔵配線板の製造方法
JP2015225895A (ja) プリント配線板および半導体パッケージ、ならびにプリント配線板の製造方法
KR101167429B1 (ko) 반도체 패키지의 제조방법
JP2008210912A (ja) 半導体装置及びその製造方法
JP4901809B2 (ja) 部品内蔵多層回路基板
JP6378616B2 (ja) 電子部品内蔵プリント配線板
JP3841079B2 (ja) 配線基板、半導体パッケージ、基体絶縁膜及び配線基板の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120704

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120704

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130903

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130911

R150 Certificate of patent or registration of utility model

Ref document number: 5367523

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150