JP5352970B2 - 樹脂組成物および半導体装置 - Google Patents
樹脂組成物および半導体装置 Download PDFInfo
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- JP5352970B2 JP5352970B2 JP2007176789A JP2007176789A JP5352970B2 JP 5352970 B2 JP5352970 B2 JP 5352970B2 JP 2007176789 A JP2007176789 A JP 2007176789A JP 2007176789 A JP2007176789 A JP 2007176789A JP 5352970 B2 JP5352970 B2 JP 5352970B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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Description
(1) 半導体素子を支持体に接着する際に用いる樹脂組成物であって、
ビスフェノール型エポキシ化合物(B1)、ポリアルキレンオキサイド骨格およびグリシジルオキシフェニル基を有するエポキシ化合物(B2)、脂環式炭化水素またはその連結体基とグリシジル基とを有する化合物(B3)を含有するエポキシ樹脂(B)ならびに前記エポキシ樹脂(B)よりも重量を基準として少量含有する、1分子内に(メタ)アクリロイル基を少なくとも1個有する(メタ)アクリル系化合物(C)を含む熱硬化性樹脂と、含有量が当該樹脂組成物中3〜65体積%の充填材とを含有し、
当該樹脂組成物の硬化物を、ASTM D3433に規定の破壊エネルギー測定法により測定したとき、測定雰囲気の温度150℃における破壊靭性値が5.0J/m2以上であることを特徴とする樹脂組成物。
ダイパッド30の外周部には、複数のリード40が、放射状に設けられている。
その後、リードフレームから樹脂止めのタイバーを打ち抜き、トリム&フォーム工程を行い、半導体装置10が製造される。
m=3a2/h3+1/h …… 式2
[ただし、式1または式2中において、Eは接着張力係数(1.99×1011[Pa])であり、bは接着層600の幅[m]であり、hはノッチ601の末端に対応する位置の治具61の高さ[m]であり、aはノッチ601の末端から、2つの貫通孔621の中心同士を通る直線までの距離である。]
このIの方法を用いる場合、熱硬化性樹脂が反応することにより成長する分子鎖に絡みつきを生じさせるために、この分子鎖がより成長するように設計する必要、すなわち、熱硬化性樹脂の種類を選択する必要がある。
このIIの方法を用いる場合、熱硬化性樹脂が反応することにより成長する分子鎖の凝集力を向上させるために、この分子鎖に極性基を導入する必要がある。
このIIIの方法を用いる場合、フィラー(充填材)と熱硬化性樹脂との接着性を向上させる必要がある。
1.樹脂組成物の調製
まず、以下に示すような参考例1、2、実施例3〜8および比較例の樹脂組成物を調製した。
充填材(A)としては、平均粒径8μm、最大粒径30μmのフレーク状銀粉(以下充填材A1)と、平均粒径2μmの球状ポリオルガノシルセスキオキサン粉末(KMP−590、信越シリコーン社製、以下充填材A2)を用意した。
2−1.樹脂組成物の硬化物の評価
次に、図2(a)に示すステンレス製の一対の治具61を用い、各パラメータを以下に示すように設定して、測定雰囲気の温度150℃および25℃における各実施例、各参考例および比較例の亀裂の伝播に要する荷重Lを、上述した方法により、それぞれ10回測定した。そして、この測定結果に基づいて、上記式1および上記式2を用いて、各実施例、各参考例および比較例について、測定雰囲気の温度150℃および25℃における破壊靭性値(G1C)を算出し、それぞれの平均値を求めた。
[耐リフロー性評価用の半導体装置の作製]
−1A− まず、ダイパッドと、リードとを備える金フラッシュしたNi−Pdリードフレームを用意した。
次に、各実施例、各参考例および比較例の(耐リフロー性評価用)半導体装置について、それぞれ、10個ずつ、下記の条件下に晒し、その後、リフロー処理(260℃、10秒、3回リフロー)を行った。そして、リフロー処理後の半導体装置を超音波探傷装置(透過型)により接着層の剥離の程度を測定し、接着層の剥離面積が10%未満の場合を接着層に剥離が生じていない(合格)とした。
条件2 :温度60℃、湿度60%RHの条件下に120時間晒した。
条件3 :温度85℃、湿度60%RHの条件下に168時間晒した。
条件4 :温度85℃、湿度85%RHの条件下に168時間晒した。
ここで、樹脂組成物の硬化物には半導体チップ(半導体素子)から発する熱による耐熱疲労性を向上させるために、熱伝導性が必要とされる。この熱伝導性は、半田リフロー処理や使用環境で樹脂組成物の硬化物に剥離やクラックなどが生じることにより劣化がおこり、耐熱疲労性に悪影響を及ぼしてしまう。このため、劣化の少ない熱伝導性は樹脂組成物の硬化物の重要な特性といえる。
−1B− まず、ダイパッドと、リードとを備えるAgリングメッキされた銅リードフレームを用意した。
まず、各実施例、各参考例および比較例の半導体装置について、それぞれ、10個ずつ、熱定数測定装置(TC−7000、アルバック理工(株)製)を用いてレーザーフラッシュ法(t1/2法)により、以下に示す処理を施す前(処理前)の熱拡散率を算出した。
20 半導体チップ
21 電極パッド
22 導電性ワイヤー
30 ダイパッド
40 リード
50 モールド部
60 接着層
600 接着層
601 ノッチ
61 治具
611 平面
62 突出部
621 貫通孔
63 スペーサー
631 第1の部材
632 第2の部材
633 突出部
Claims (7)
- 半導体素子を支持体に接着する際に用いる樹脂組成物であって、
ビスフェノール型エポキシ化合物(B1)、ポリアルキレンオキサイド骨格およびグリシジルオキシフェニル基を有するエポキシ化合物(B2)、脂環式炭化水素またはその連結体基とグリシジル基とを有する化合物(B3)を含有するエポキシ樹脂(B)ならびに前記エポキシ樹脂(B)よりも重量を基準として少量含有する、1分子内に(メタ)アクリロイル基を少なくとも1個有する(メタ)アクリル系化合物(C)を含む熱硬化性樹脂と、含有量が当該樹脂組成物中3〜65体積%の充填材とを含有し、
当該樹脂組成物の硬化物を、ASTM D3433に規定の破壊エネルギー測定法により測定したとき、測定雰囲気の温度150℃における破壊靭性値が5.0J/m2以上であることを特徴とする樹脂組成物。 - 前記硬化物は、測定雰囲気の温度25℃における前記破壊靭性値が120J/m2以上である請求項1に記載の樹脂組成物。
- 測定雰囲気の温度25℃における前記硬化物の前記破壊靭性値をA[J/m2]とし、測定雰囲気の温度150℃における前記硬化物の前記破壊靭性値をB[J/m2]としたとき、前記破壊靭性値の変化率A/Bが40以下である請求項1または2に記載の樹脂組成物。
- 前記充填材は、導電性を有する粒子である請求項1ないし3のいずれかに記載の樹脂組成物。
- 前記粒子は、銀で構成されている請求項4に記載の樹脂組成物。
- 前記樹脂組成物は、その25℃における粘度が10〜30Pa・Sである請求項1ないし5のいずれかに記載の樹脂組成物。
- 請求項1ないし6のいずれかに記載の樹脂組成物の硬化物により、少なくとも1つの半導体素子を支持体に接着してなることを特徴とする半導体装置。
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