JP5351740B2 - 二回のカット工程によって多結晶シリコンのライン端部短縮の問題を解決する方法 - Google Patents
二回のカット工程によって多結晶シリコンのライン端部短縮の問題を解決する方法 Download PDFInfo
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- 238000005520 cutting process Methods 0.000 title description 16
- 238000004904 shortening Methods 0.000 title description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title description 2
- 238000004519 manufacturing process Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
20:アクティブ領域
22:アクティブ領域
24:絶縁領域
26:ゲート誘電層
28:ゲート電極層
40:アクティブ領域
42:アクティブ領域
50:ゲートストリップ
52:ゲートストリップ
54:ゲートストリップ
60:ゲートストリップ
62:ゲートストリップ
63:ゲートストリップ
64:ゲートストリップ
66:犠牲ストリップ
70:遮蔽部
72:開口部
74:開口部
76:端部
78:端部
84:接触部
102:ゲート
104:ゲート
105:MOS素子
106:アクティブ領域
107:アクティブ領域
108:MOS素子
109:端部
111:端部
202:アクティブ領域
204:アクティブ領域
206:ゲートストリップ
208:ゲートストリップ
210:開口部
220:端部
222:端部
230:ゲートストリップ
232:ゲートストリップ
360:ゲートストリップ
362:ゲートストリップ
364:ゲートストリップ
366:ゲートストリップ
460:ゲートストリップ
462:ゲートストリップ
464:ゲートストリップ
466:ゲートストリップ
500:点線枠
P:ピッチ
P’:ピッチ
P1:ピッチ
P2:ピッチ
P3:ピッチ
P4:ピッチ
P5:ピッチ
P6:ピッチ
W1:幅
W2:幅
W3:幅
W4:幅
W5:幅
W6:幅
W7:幅
W7’:幅
W8:幅
W8’:幅
W9:幅
W10:幅
Claims (11)
- 集積回路構造の製造方法であって、少なくとも
第1アクティブ領域と、前記第1アクティブ領域に近接する第2アクティブ領域と、前記第1アクティブ領域と前記第2アクティブ領域の間に位置して、前記第1アクティブ領域と前記第2アクティブ領域に隣接する絶縁領域とを有する基板を提供するステップと、前記基板にゲート誘電層を形成するステップと、
前記ゲート誘電層にゲート電極層を形成するステップと、
互いに平行して、一部が前記絶縁領域に延伸する前記第1アクティブ領域に位置する第1ゲートストリップと、前記第1アクティブ領域に位置する第2ゲートストリップと、前記第2アクティブ領域に位置し、前記第1ゲートストリップと異なる幅を有する第3ゲートストリップと、前記第2アクティブ領域に位置し、前記第2ゲートストリップと異なる幅を有する第4ゲートストリップとを前記ゲート電極層に残して、また、実質的に前記第1ゲートストリップの延伸方向に直交する延伸方向を有し、前記第1ゲートストリップと前記第3ゲートストリップとを互いに接続し、更に前記第2ゲートストリップと前記第4ゲートストリップとに接続する犠牲ストリップとを前記ゲート電極層に残すように、前記ゲート電極層をエッチングするステップと、
前記第1ゲートストリップ、前記第2ゲートストリップ、前記第3ゲートストリップ、及び前記第4ゲートストリップの直接に前記第1アクティブ領域と前記第2アクティブ領域に位置する複数の部分を覆い、前記犠牲ストリップを開口部に露出させる遮蔽部を形成するステップと、
前記開口部を通して前記犠牲ストリップをエッチングするステップと、を含む集積回路構造の製造方法。 - 前記開口部に露出された前記第1ゲートストリップ、前記第2ゲートストリップ、前記第3ゲートストリップ、及び前記第4ゲートストリップの複数の他の部分を直接にエッチングする請求項1に記載の集積回路構造の製造方法。
- 前記第1ゲートストリップと前記第3ゲートストリップは、前記第1ゲートストリップと前記第3ゲートストリップの延伸方向において、一列に整列されていない請求項1に記載の集積回路構造の製造方法。
- 前記犠牲ストリップは、更に実質的に一列に整列されていて、直線状のストリップを形成する前記第2ゲートストリップ及び前記第4ゲートストリップに接続する請求項3に記載の集積回路構造の製造方法。
- 前記第1ゲートストリップと前記第3ゲートストリップは、実質的に一列に整列されている請求項1に記載の集積回路構造の製造方法。
- 前記犠牲ストリップは、更に実質的に一列に整列されている請求項5に記載の集積回路構造の製造方法。
- 前記第1ゲートストリップと前記第3ゲートストリップの間の第1ピッチと、前記第2ゲートストリップと前記第4ゲートストリップの間の第2ピッチは、実質的に同じ距離である請求項1に記載の集積回路構造の製造方法。
- 前記第1ゲートストリップと前記第3ゲートストリップの間の第1ピッチと、前記第2ゲートストリップと前記第4ゲートストリップの間の第2ピッチは、実質的に異なる距離である請求項1に記載の集積回路構造の製造方法。
- 集積回路構造の製造方法であって、少なくとも
第1アクティブ領域と、前記第1アクティブ領域に近接する第2アクティブ領域と、前記第1アクティブ領域と前記第2アクティブ領域との間に位置して、前記第1アクティブ領域と前記第2アクティブ領域に隣接する絶縁領域とを有する基板を提供するステップと、
前記基板にゲート誘電層を形成するステップと、
前記ゲート誘電層にゲート電極層を形成するステップと、
第1延伸方向を有し、前記第1アクティブ領域に位置する第1ゲートストリップと、
前記第1延伸方向と実質的に一列に整列されている第2延伸方向を有し、幅が前記第1ゲートストリップの幅と異なり、前記第2アクティブ領域に位置する第2ゲートストリップと、
直接に前記絶縁領域に位置し、前記第1延伸方向に直交する第3延伸方向を有し、前記第1ゲートストリップと前記第2ゲートストリップとを互いに接続して、前記第1ゲートストリップの第1幅及び前記第2ゲートストリップの第2幅より大きい長さを有する犠牲ストリップと、
を前記ゲート電極層に残すように、前記ゲート電極層に対して第一パターン化するステップと、
前記第1アクティブ領域、前記第2アクティブ領域、及び前記第1ゲートストリップと前記第2ゲートストリップの複数の部分を覆い、前記犠牲ストリップ、及び前記第1ゲートストリップと前記第2ゲートストリップの他の複数の部分を露出させる開口部を有するフォトレジストを形成するステップと、
前記犠牲ストリップ、及び前記第1ゲートストリップと前記第2ゲートストリップの他の複数の部分をエッチングするステップと、
前記フォトレジストを除去するステップと、を含む集積回路構造の製造方法。 - 前記犠牲ストリップは、前記第1ゲートストリップと前記第2ゲートストリップで、幅が小さい方より小さくない幅を有する請求項9に記載の集積回路構造の製造方法。
- 前記犠牲ストリップは、更に一部が直接に前記第1アクティブ領域に位置し、前記第1ゲートストリップと前記第2ゲートストリップに平行する第3ゲートストリップに接続する請求項9に記載の集積回路構造の製造方法。
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US12/340,113 US7939384B2 (en) | 2008-12-19 | 2008-12-19 | Eliminating poly uni-direction line-end shortening using second cut |
US12/340,113 | 2008-12-19 |
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JP5351740B2 true JP5351740B2 (ja) | 2013-11-27 |
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US (2) | US7939384B2 (ja) |
JP (1) | JP5351740B2 (ja) |
KR (1) | KR101098569B1 (ja) |
CN (1) | CN101752315B (ja) |
TW (1) | TWI388005B (ja) |
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US7432179B2 (en) | 2004-12-15 | 2008-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Controlling gate formation by removing dummy gate structures |
CN102376551B (zh) * | 2010-08-19 | 2015-12-16 | 中国科学院微电子研究所 | 半导体器件结构的制造方法及其结构 |
US8610176B2 (en) * | 2011-01-11 | 2013-12-17 | Qualcomm Incorporated | Standard cell architecture using double poly patterning for multi VT devices |
US20130320451A1 (en) | 2012-06-01 | 2013-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") | Semiconductor device having non-orthogonal element |
US9136168B2 (en) | 2013-06-28 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive line patterning |
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US20110183506A1 (en) | 2011-07-28 |
CN101752315A (zh) | 2010-06-23 |
TWI388005B (zh) | 2013-03-01 |
TW201025429A (en) | 2010-07-01 |
CN101752315B (zh) | 2013-06-12 |
US8216888B2 (en) | 2012-07-10 |
US7939384B2 (en) | 2011-05-10 |
JP2010153862A (ja) | 2010-07-08 |
KR101098569B1 (ko) | 2011-12-26 |
KR20100071899A (ko) | 2010-06-29 |
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