JP5341556B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

Info

Publication number
JP5341556B2
JP5341556B2 JP2009046356A JP2009046356A JP5341556B2 JP 5341556 B2 JP5341556 B2 JP 5341556B2 JP 2009046356 A JP2009046356 A JP 2009046356A JP 2009046356 A JP2009046356 A JP 2009046356A JP 5341556 B2 JP5341556 B2 JP 5341556B2
Authority
JP
Japan
Prior art keywords
island
cavity
lead
runner
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009046356A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010109315A5 (enExample
JP2010109315A (ja
Inventor
茂治 吉羽
浩和 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Components Industries LLC
Original Assignee
Semiconductor Components Industries LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Industries LLC filed Critical Semiconductor Components Industries LLC
Priority to JP2009046356A priority Critical patent/JP5341556B2/ja
Priority to US12/568,486 priority patent/US8105883B2/en
Priority to CN200910179607XA priority patent/CN101930933B/zh
Publication of JP2010109315A publication Critical patent/JP2010109315A/ja
Publication of JP2010109315A5 publication Critical patent/JP2010109315A5/ja
Application granted granted Critical
Publication of JP5341556B2 publication Critical patent/JP5341556B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2009046356A 2008-09-30 2009-02-27 半導体装置の製造方法 Active JP5341556B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009046356A JP5341556B2 (ja) 2008-09-30 2009-02-27 半導体装置の製造方法
US12/568,486 US8105883B2 (en) 2008-09-30 2009-09-28 Molding die with tilted runner, method of manufacturing semiconductor device using the same, and semiconductor device made by the method
CN200910179607XA CN101930933B (zh) 2008-09-30 2009-09-29 半导体装置及其制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008252996 2008-09-30
JP2008252996 2008-09-30
JP2009046356A JP5341556B2 (ja) 2008-09-30 2009-02-27 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010109315A JP2010109315A (ja) 2010-05-13
JP2010109315A5 JP2010109315A5 (enExample) 2012-03-15
JP5341556B2 true JP5341556B2 (ja) 2013-11-13

Family

ID=42298426

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009046356A Active JP5341556B2 (ja) 2008-09-30 2009-02-27 半導体装置の製造方法
JP2009046355A Active JP5147758B2 (ja) 2008-09-30 2009-02-27 半導体装置の製造方法、半導体装置およびモールド金型

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009046355A Active JP5147758B2 (ja) 2008-09-30 2009-02-27 半導体装置の製造方法、半導体装置およびモールド金型

Country Status (3)

Country Link
US (1) US8105883B2 (enExample)
JP (2) JP5341556B2 (enExample)
CN (1) CN101930933B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5761585B2 (ja) * 2008-10-07 2015-08-12 国立研究開発法人情報通信研究機構 パルスレーダ装置
JP4852088B2 (ja) * 2008-11-04 2012-01-11 株式会社東芝 バイアス回路
JP5333402B2 (ja) * 2010-10-06 2013-11-06 三菱電機株式会社 半導体装置の製造方法
CN102856217B (zh) * 2011-06-30 2018-05-22 恩智浦美国有限公司 用于模塑半导体器件的装置和方法
DE102012207678A1 (de) * 2012-05-09 2013-11-14 Osram Opto Semiconductors Gmbh Vorrichtung zum formen einer gehäusestruktur für eine mehrzahl von elektronischen bauteilen und gehäusestruktur für eine mehrzahl von elektronischen bauteilen
US9911838B2 (en) * 2012-10-26 2018-03-06 Ixys Corporation IGBT die structure with auxiliary P well terminal
CN107078127B (zh) 2014-11-07 2019-12-20 三菱电机株式会社 电力用半导体装置及其制造方法
US9583421B2 (en) * 2015-07-16 2017-02-28 Semiconductor Components Industries, Llc Recessed lead leadframe packages
CN107645874A (zh) * 2016-07-20 2018-01-30 珠海市声驰电器有限公司 一种密封电路结构及其灌封方法
CN107731775A (zh) * 2017-09-26 2018-02-23 铜陵中锐电子科技有限公司 适用于连续充填技术的to251型八排引线框架
CN110875410A (zh) * 2018-08-30 2020-03-10 深圳市聚飞光电股份有限公司 Led支架及其制作方法、led发光器件、发光装置
JP2020123691A (ja) * 2019-01-31 2020-08-13 株式会社三社電機製作所 半導体製品
US20210043466A1 (en) * 2019-08-06 2021-02-11 Texas Instruments Incorporated Universal semiconductor package molds
US11515174B2 (en) * 2019-11-12 2022-11-29 Micron Technology, Inc. Semiconductor devices with package-level compartmental shielding and associated systems and methods
WO2022259395A1 (ja) * 2021-06-09 2022-12-15 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
JP7528042B2 (ja) * 2021-09-17 2024-08-05 株式会社東芝 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6315432A (ja) * 1986-07-08 1988-01-22 Fujitsu Ltd 樹脂パツケ−ジ成形用金型
JP2786197B2 (ja) 1987-04-27 1998-08-13 株式会社日立製作所 半導体装置の製造方法
US4946633A (en) * 1987-04-27 1990-08-07 Hitachi, Ltd. Method of producing semiconductor devices
JP2724491B2 (ja) * 1989-02-01 1998-03-09 株式会社日立製作所 成形装置
JPH04225241A (ja) * 1990-12-26 1992-08-14 Oki Electric Ind Co Ltd 樹脂封止半導体装置の製造方法及びリードフレーム
JP3828036B2 (ja) * 2002-03-28 2006-09-27 三菱電機株式会社 樹脂モールド型デバイスの製造方法及び製造装置
JP4121335B2 (ja) * 2002-08-28 2008-07-23 三洋電機株式会社 リードフレームおよびそれを用いた半導体装置の製造方法
JP2004158539A (ja) 2002-11-05 2004-06-03 Matsushita Electric Ind Co Ltd 樹脂封止型半導体装置の製造方法
JP4243177B2 (ja) * 2003-12-22 2009-03-25 株式会社ルネサステクノロジ 半導体装置の製造方法
WO2006129926A1 (en) * 2005-06-02 2006-12-07 Tsp Co., Ltd. Mold for manufacturing semiconductor device and semiconductor device manufactred using the same

Also Published As

Publication number Publication date
CN101930933B (zh) 2012-04-18
JP5147758B2 (ja) 2013-02-20
US8105883B2 (en) 2012-01-31
JP2010109314A (ja) 2010-05-13
CN101930933A (zh) 2010-12-29
US20100219517A1 (en) 2010-09-02
JP2010109315A (ja) 2010-05-13

Similar Documents

Publication Publication Date Title
JP5341556B2 (ja) 半導体装置の製造方法
US10008438B2 (en) Low profile leaded semiconductor package and method of fabricating the same
US7598603B2 (en) Electronic component having a power switch with an anode thereof mounted on a die attach region of a heat sink
US7102209B1 (en) Substrate for use in semiconductor manufacturing and method of making same
TWI650840B (zh) 引線支架、半導體裝置及引線支架之製造方法
US20070042531A1 (en) Method for producing semiconductor device and semiconductor device
US20120181676A1 (en) Power semiconductor device packaging
US20130017652A1 (en) Method of manufacturing a semiconductor device package with a heatsink
US6893898B2 (en) Semiconductor device and a method of manufacturing the same
JP2010034349A (ja) 半導体装置の製造方法およびリードフレーム
JP6539727B2 (ja) 分配機能タイバーを有するギャングクリップ
JP3877409B2 (ja) 半導体装置の製造方法
JP3877453B2 (ja) 半導体装置の製造方法
JP3877410B2 (ja) 半導体装置の製造方法
JP2004363365A (ja) 半導体装置及びその製造方法
JP3877402B2 (ja) 半導体装置の製造方法
JP3831504B2 (ja) リードフレーム
JP3877405B2 (ja) 半導体装置の製造方法
JP4784945B2 (ja) 半導体装置の製造方法
WO2006061673A1 (en) Semiconductor package having at least two semiconductor chips and method of assembling the semiconductor package
CN107104089B (zh) 引线框、以及半导体封装的制造方法
US20050073031A1 (en) Lead frame, semiconductor device, and method for manufacturing semiconductor device
US11862540B2 (en) Mold flow balancing for a matrix leadframe
US20230038411A1 (en) Semiconductor package with raised dam on clip or leadframe
JP5086315B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110613

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120131

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120911

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121207

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20130218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130408

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130524

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130723

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130808

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5341556

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D04

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250