CN101930933B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN101930933B
CN101930933B CN200910179607XA CN200910179607A CN101930933B CN 101930933 B CN101930933 B CN 101930933B CN 200910179607X A CN200910179607X A CN 200910179607XA CN 200910179607 A CN200910179607 A CN 200910179607A CN 101930933 B CN101930933 B CN 101930933B
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CN
China
Prior art keywords
island
die cavity
semiconductor device
resin
mould
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200910179607XA
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English (en)
Chinese (zh)
Other versions
CN101930933A (zh
Inventor
吉羽茂治
福田浩和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
System Solutions Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Semiconductor Co Ltd
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Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of CN101930933A publication Critical patent/CN101930933A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
CN200910179607XA 2008-09-30 2009-09-29 半导体装置及其制造方法 Expired - Fee Related CN101930933B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2008-252996 2008-09-30
JP2008252996 2008-09-30
JP2009-046356 2009-02-27
JP2009-046355 2009-02-27
JP2009046356A JP5341556B2 (ja) 2008-09-30 2009-02-27 半導体装置の製造方法
JP2009046355A JP5147758B2 (ja) 2008-09-30 2009-02-27 半導体装置の製造方法、半導体装置およびモールド金型

Publications (2)

Publication Number Publication Date
CN101930933A CN101930933A (zh) 2010-12-29
CN101930933B true CN101930933B (zh) 2012-04-18

Family

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CN200910179607XA Expired - Fee Related CN101930933B (zh) 2008-09-30 2009-09-29 半导体装置及其制造方法

Country Status (3)

Country Link
US (1) US8105883B2 (enExample)
JP (2) JP5341556B2 (enExample)
CN (1) CN101930933B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5761585B2 (ja) * 2008-10-07 2015-08-12 国立研究開発法人情報通信研究機構 パルスレーダ装置
JP4852088B2 (ja) * 2008-11-04 2012-01-11 株式会社東芝 バイアス回路
JP5333402B2 (ja) * 2010-10-06 2013-11-06 三菱電機株式会社 半導体装置の製造方法
CN102856217B (zh) * 2011-06-30 2018-05-22 恩智浦美国有限公司 用于模塑半导体器件的装置和方法
DE102012207678A1 (de) * 2012-05-09 2013-11-14 Osram Opto Semiconductors Gmbh Vorrichtung zum formen einer gehäusestruktur für eine mehrzahl von elektronischen bauteilen und gehäusestruktur für eine mehrzahl von elektronischen bauteilen
US9911838B2 (en) * 2012-10-26 2018-03-06 Ixys Corporation IGBT die structure with auxiliary P well terminal
CN107078127B (zh) 2014-11-07 2019-12-20 三菱电机株式会社 电力用半导体装置及其制造方法
US9583421B2 (en) * 2015-07-16 2017-02-28 Semiconductor Components Industries, Llc Recessed lead leadframe packages
CN107645874A (zh) * 2016-07-20 2018-01-30 珠海市声驰电器有限公司 一种密封电路结构及其灌封方法
CN107731775A (zh) * 2017-09-26 2018-02-23 铜陵中锐电子科技有限公司 适用于连续充填技术的to251型八排引线框架
CN110875410A (zh) * 2018-08-30 2020-03-10 深圳市聚飞光电股份有限公司 Led支架及其制作方法、led发光器件、发光装置
JP2020123691A (ja) * 2019-01-31 2020-08-13 株式会社三社電機製作所 半導体製品
US20210043466A1 (en) * 2019-08-06 2021-02-11 Texas Instruments Incorporated Universal semiconductor package molds
US11515174B2 (en) * 2019-11-12 2022-11-29 Micron Technology, Inc. Semiconductor devices with package-level compartmental shielding and associated systems and methods
WO2022259395A1 (ja) * 2021-06-09 2022-12-15 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
JP7528042B2 (ja) * 2021-09-17 2024-08-05 株式会社東芝 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1449036A (zh) * 2002-03-28 2003-10-15 三菱电机株式会社 树脂模制型器件及其制造装置
JP2004158539A (ja) * 2002-11-05 2004-06-03 Matsushita Electric Ind Co Ltd 樹脂封止型半導体装置の製造方法
CN1638071A (zh) * 2003-12-22 2005-07-13 株式会社瑞萨科技 半导体器件的制造方法

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Publication number Priority date Publication date Assignee Title
JPS6315432A (ja) * 1986-07-08 1988-01-22 Fujitsu Ltd 樹脂パツケ−ジ成形用金型
JP2786197B2 (ja) 1987-04-27 1998-08-13 株式会社日立製作所 半導体装置の製造方法
US4946633A (en) * 1987-04-27 1990-08-07 Hitachi, Ltd. Method of producing semiconductor devices
JP2724491B2 (ja) * 1989-02-01 1998-03-09 株式会社日立製作所 成形装置
JPH04225241A (ja) * 1990-12-26 1992-08-14 Oki Electric Ind Co Ltd 樹脂封止半導体装置の製造方法及びリードフレーム
JP4121335B2 (ja) * 2002-08-28 2008-07-23 三洋電機株式会社 リードフレームおよびそれを用いた半導体装置の製造方法
WO2006129926A1 (en) * 2005-06-02 2006-12-07 Tsp Co., Ltd. Mold for manufacturing semiconductor device and semiconductor device manufactred using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1449036A (zh) * 2002-03-28 2003-10-15 三菱电机株式会社 树脂模制型器件及其制造装置
JP2004158539A (ja) * 2002-11-05 2004-06-03 Matsushita Electric Ind Co Ltd 樹脂封止型半導体装置の製造方法
CN1638071A (zh) * 2003-12-22 2005-07-13 株式会社瑞萨科技 半导体器件的制造方法

Also Published As

Publication number Publication date
JP5341556B2 (ja) 2013-11-13
JP5147758B2 (ja) 2013-02-20
US8105883B2 (en) 2012-01-31
JP2010109314A (ja) 2010-05-13
CN101930933A (zh) 2010-12-29
US20100219517A1 (en) 2010-09-02
JP2010109315A (ja) 2010-05-13

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Termination date: 20210929