JP5326278B2 - 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法 - Google Patents

回路基板及びこれを用いた半導体モジュール、回路基板の製造方法 Download PDF

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JP5326278B2
JP5326278B2 JP2007533174A JP2007533174A JP5326278B2 JP 5326278 B2 JP5326278 B2 JP 5326278B2 JP 2007533174 A JP2007533174 A JP 2007533174A JP 2007533174 A JP2007533174 A JP 2007533174A JP 5326278 B2 JP5326278 B2 JP 5326278B2
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circuit board
ceramic substrate
metal
insulating ceramic
fracture toughness
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JPWO2007026547A1 (ja
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洋一郎 加賀
寿之 今村
純一 渡辺
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Proterial Ltd
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Hitachi Metals Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0352—Differences between the conductors of different layers of a multilayer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09736—Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)
  • Ceramic Products (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
JP2007533174A 2005-08-29 2006-08-17 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法 Active JP5326278B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007533174A JP5326278B2 (ja) 2005-08-29 2006-08-17 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2005247301 2005-08-29
JP2005247301 2005-08-29
JP2006091408 2006-03-29
JP2006091408 2006-03-29
PCT/JP2006/316154 WO2007026547A1 (ja) 2005-08-29 2006-08-17 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法
JP2007533174A JP5326278B2 (ja) 2005-08-29 2006-08-17 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法

Related Child Applications (2)

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JP2012131557A Division JP2012169678A (ja) 2005-08-29 2012-06-11 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法
JP2012231919A Division JP5598522B2 (ja) 2005-08-29 2012-10-19 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法

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JPWO2007026547A1 JPWO2007026547A1 (ja) 2009-03-05
JP5326278B2 true JP5326278B2 (ja) 2013-10-30

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JP2012131557A Pending JP2012169678A (ja) 2005-08-29 2012-06-11 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法
JP2012231919A Active JP5598522B2 (ja) 2005-08-29 2012-10-19 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法

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JP2012231919A Active JP5598522B2 (ja) 2005-08-29 2012-10-19 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法

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US (1) US8563869B2 (enExample)
EP (1) EP1921675B1 (enExample)
JP (3) JP5326278B2 (enExample)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10515868B2 (en) 2015-09-28 2019-12-24 Kabushiki Kaisha Toshiba Circuit substrate and semiconductor device

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5326278B2 (ja) * 2005-08-29 2013-10-30 日立金属株式会社 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法
JP2009094264A (ja) * 2007-10-09 2009-04-30 Hitachi Metals Ltd 回路基板、半導体モジュール、半導体モジュールの設計方法
JP5070014B2 (ja) * 2007-11-21 2012-11-07 株式会社豊田自動織機 放熱装置
JP2009130060A (ja) * 2007-11-21 2009-06-11 Toyota Industries Corp 放熱装置
US8609993B2 (en) * 2008-05-16 2013-12-17 Mitsubishi Materials Corporation Power module substrate, power module, and method for manufacturing power module substrate
WO2009154295A1 (ja) * 2008-06-20 2009-12-23 日立金属株式会社 セラミックス集合基板とその製造方法及びセラミックス基板並びにセラミックス回路基板
DE102010039728A1 (de) * 2010-08-25 2012-03-01 Robert Bosch Gmbh Verfahren zur Herstellung einer elektrischen Schaltung und elektrischen Schaltung
EP2811513B1 (en) 2012-02-01 2019-12-18 Mitsubishi Materials Corporation Method for producing substrate for power modules
CN102856266A (zh) * 2012-09-19 2013-01-02 张剑锋 一体化绝缘陶瓷基板
EP3109222B1 (en) * 2014-02-21 2018-09-26 Denka Company Limited Ceramic circuit board
JP6341822B2 (ja) 2014-09-26 2018-06-13 三菱電機株式会社 半導体装置
CN105742268B (zh) * 2014-12-26 2019-01-22 株式会社东芝 布线基板以及包含布线基板的半导体封装
US10037928B2 (en) * 2015-01-29 2018-07-31 Kyocera Corporation Circuit board and electronic device
JP6370257B2 (ja) 2015-04-27 2018-08-08 三菱電機株式会社 半導体装置
KR101708317B1 (ko) * 2015-06-17 2017-02-20 엘지전자 주식회사 스트레인 검사 소자 및 그 부착 방법
US10160690B2 (en) 2015-09-28 2018-12-25 Kabushiki Kaisha Toshiba Silicon nitride circuit board and semiconductor module using the same
JP6137267B2 (ja) * 2015-10-08 2017-05-31 三菱マテリアル株式会社 ヒートシンク付きパワーモジュール用基板及びパワーモジュール
WO2018180965A1 (ja) * 2017-03-30 2018-10-04 株式会社 東芝 セラミックス銅回路基板およびそれを用いた半導体装置
WO2018207396A1 (ja) * 2017-05-11 2018-11-15 住友電気工業株式会社 半導体装置
KR102436225B1 (ko) * 2017-07-28 2022-08-25 삼성전기주식회사 인쇄회로기판
WO2019167942A1 (ja) * 2018-02-27 2019-09-06 三菱マテリアル株式会社 絶縁回路基板
DE102018104521B4 (de) * 2018-02-28 2022-11-17 Rogers Germany Gmbh Metall-Keramik-Substrate
KR102766685B1 (ko) * 2019-03-29 2025-02-11 덴카 주식회사 질화규소 회로 기판, 및, 전자 부품 모듈
CN110012597B (zh) * 2019-04-12 2020-11-27 中国科学院电工研究所 一种陶瓷覆铜电路板及其制备方法
JP7221401B2 (ja) * 2019-08-29 2023-02-13 京セラ株式会社 電気回路基板及びパワーモジュール
JPWO2023204054A1 (enExample) * 2022-04-18 2023-10-26

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004080063A (ja) * 1996-08-27 2004-03-11 Dowa Mining Co Ltd 高信頼性半導体用基板
JP2004119568A (ja) * 2002-09-25 2004-04-15 Kyocera Corp セラミック回路基板
JP2005026252A (ja) * 2003-06-30 2005-01-27 Ngk Spark Plug Co Ltd セラミック回路基板、放熱モジュール、および半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780164A (en) 1994-12-12 1998-07-14 The Dow Chemical Company Computer disk substrate, the process for making same, and the material made therefrom
US5672435A (en) * 1994-12-12 1997-09-30 The Dow Chemical Company Hard disk drive components and methods of making same
JP3100871B2 (ja) 1995-07-11 2000-10-23 株式会社東芝 窒化アルミニウム焼結体
JP3512977B2 (ja) 1996-08-27 2004-03-31 同和鉱業株式会社 高信頼性半導体用基板
JPH10107440A (ja) * 1996-09-30 1998-04-24 Sumitomo Kinzoku Electro Device:Kk セラミック基板及びその製造方法
JP2001010865A (ja) 1999-06-23 2001-01-16 Ngk Insulators Ltd 窒化珪素焼結体及びその製造方法
US6417563B1 (en) * 2000-07-14 2002-07-09 Advanced Micro Devices, Inc. Spring frame for protecting packaged electronic devices
DE10165107B3 (de) * 2000-09-20 2015-06-18 Hitachi Metals, Ltd. Substrat mit Siliciumnitrid-Sinterkörper und Leiterplatte
JP3797905B2 (ja) 2000-10-27 2006-07-19 株式会社東芝 窒化けい素セラミックス基板およびそれを用いた窒化けい素セラミックス回路基板並びにその製造方法
US6613443B2 (en) * 2000-10-27 2003-09-02 Kabushiki Kaisha Toshiba Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the substrate
JP2003101184A (ja) * 2001-09-27 2003-04-04 Kyocera Corp セラミック回路基板およびその製造方法
JP5326278B2 (ja) * 2005-08-29 2013-10-30 日立金属株式会社 回路基板及びこれを用いた半導体モジュール、回路基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004080063A (ja) * 1996-08-27 2004-03-11 Dowa Mining Co Ltd 高信頼性半導体用基板
JP2004119568A (ja) * 2002-09-25 2004-04-15 Kyocera Corp セラミック回路基板
JP2005026252A (ja) * 2003-06-30 2005-01-27 Ngk Spark Plug Co Ltd セラミック回路基板、放熱モジュール、および半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10515868B2 (en) 2015-09-28 2019-12-24 Kabushiki Kaisha Toshiba Circuit substrate and semiconductor device
US10790214B2 (en) 2015-09-28 2020-09-29 Kabushiki Kaisha Toshiba Circuit substrate and semiconductor device

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WO2007026547A1 (ja) 2007-03-08
EP1921675A1 (en) 2008-05-14
JPWO2007026547A1 (ja) 2009-03-05
EP1921675B1 (en) 2018-10-31
JP2013042165A (ja) 2013-02-28
JP5598522B2 (ja) 2014-10-01
US20090101392A1 (en) 2009-04-23
US8563869B2 (en) 2013-10-22
EP1921675A4 (en) 2010-09-22
JP2012169678A (ja) 2012-09-06

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