JP5320611B2 - スタックダイパッケージ - Google Patents

スタックダイパッケージ Download PDF

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Publication number
JP5320611B2
JP5320611B2 JP2009515464A JP2009515464A JP5320611B2 JP 5320611 B2 JP5320611 B2 JP 5320611B2 JP 2009515464 A JP2009515464 A JP 2009515464A JP 2009515464 A JP2009515464 A JP 2009515464A JP 5320611 B2 JP5320611 B2 JP 5320611B2
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JP
Japan
Prior art keywords
integrated circuit
circuit die
wirebond
electrical contact
substrate
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JP2009515464A
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English (en)
Japanese (ja)
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JP2009540606A5 (https=
JP2009540606A (ja
Inventor
ウー、アルバート
カオ、ファフン
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マーベル ワールド トレード リミテッド
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Publication of JP2009540606A5 publication Critical patent/JP2009540606A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/853On the same surface
    • H10W72/859Bump connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
JP2009515464A 2006-06-15 2007-06-13 スタックダイパッケージ Active JP5320611B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US81377806P 2006-06-15 2006-06-15
US60/813,778 2006-06-15
US11/801,317 2007-05-09
US11/801,317 US7535110B2 (en) 2006-06-15 2007-05-09 Stack die packages
PCT/US2007/013821 WO2007146307A2 (en) 2006-06-15 2007-06-13 Stack die packages

Publications (3)

Publication Number Publication Date
JP2009540606A JP2009540606A (ja) 2009-11-19
JP2009540606A5 JP2009540606A5 (https=) 2010-07-22
JP5320611B2 true JP5320611B2 (ja) 2013-10-23

Family

ID=38666964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009515464A Active JP5320611B2 (ja) 2006-06-15 2007-06-13 スタックダイパッケージ

Country Status (6)

Country Link
US (2) US7535110B2 (https=)
EP (1) EP2033220B1 (https=)
JP (1) JP5320611B2 (https=)
CN (1) CN101506975B (https=)
TW (1) TWI429050B (https=)
WO (1) WO2007146307A2 (https=)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5388422B2 (ja) * 2007-05-11 2014-01-15 スパンション エルエルシー 半導体装置及びその製造方法
US7677109B2 (en) * 2008-02-27 2010-03-16 Honeywell International Inc. Pressure sense die pad layout and method for direct wire bonding to programmable compensation integrated circuit die
US8310051B2 (en) 2008-05-27 2012-11-13 Mediatek Inc. Package-on-package with fan-out WLCSP
US8093722B2 (en) * 2008-05-27 2012-01-10 Mediatek Inc. System-in-package with fan-out WLCSP
US8253231B2 (en) * 2008-09-23 2012-08-28 Marvell International Ltd. Stacked integrated circuit package using a window substrate
US9009393B1 (en) 2008-09-23 2015-04-14 Marvell International Ltd. Hybrid solid-state disk (SSD)/hard disk drive (HDD) architectures
US8896126B2 (en) 2011-08-23 2014-11-25 Marvell World Trade Ltd. Packaging DRAM and SOC in an IC package
US20100213588A1 (en) * 2009-02-20 2010-08-26 Tung-Hsien Hsieh Wire bond chip package
US8236607B2 (en) * 2009-06-19 2012-08-07 Stats Chippac Ltd. Integrated circuit packaging system with stacked integrated circuit and method of manufacture thereof
US8304917B2 (en) * 2009-12-03 2012-11-06 Powertech Technology Inc. Multi-chip stacked package and its mother chip to save interposer
TWI501380B (zh) * 2010-01-29 2015-09-21 財團法人國家實驗研究院國家晶片系統設計中心 多基板晶片模組堆疊之三維系統晶片結構
KR101683814B1 (ko) 2010-07-26 2016-12-08 삼성전자주식회사 관통 전극을 구비하는 반도체 장치
US9490003B2 (en) * 2011-03-31 2016-11-08 Intel Corporation Induced thermal gradients
US9658678B2 (en) 2011-03-31 2017-05-23 Intel Corporation Induced thermal gradients
US8674483B2 (en) 2011-06-27 2014-03-18 Marvell World Trade Ltd. Methods and arrangements relating to semiconductor packages including multi-memory dies
US8823165B2 (en) 2011-07-12 2014-09-02 Invensas Corporation Memory module in a package
US8513817B2 (en) 2011-07-12 2013-08-20 Invensas Corporation Memory module in a package
US8502390B2 (en) 2011-07-12 2013-08-06 Tessera, Inc. De-skewed multi-die packages
US8659140B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization using duplicate sets of signal terminals in assemblies without wirebonds to package substrate
US8436457B2 (en) 2011-10-03 2013-05-07 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
US8659142B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization for wirebond assemblies without windows
US8525327B2 (en) 2011-10-03 2013-09-03 Invensas Corporation Stub minimization for assemblies without wirebonds to package substrate
WO2013052080A1 (en) 2011-10-03 2013-04-11 Invensas Corporation Stub minimization for multi-die wirebond assemblies with orthogonal windows
US8659141B2 (en) 2011-10-03 2014-02-25 Invensas Corporation Stub minimization using duplicate sets of terminals for wirebond assemblies without windows
US8441111B2 (en) 2011-10-03 2013-05-14 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
EP2764543A2 (en) 2011-10-03 2014-08-13 Invensas Corporation Stub minimization for multi-die wirebond assemblies with parallel windows
US8917532B2 (en) 2011-10-03 2014-12-23 Invensas Corporation Stub minimization with terminal grids offset from center of package
CN102446882B (zh) 2011-12-30 2013-12-04 北京工业大学 一种半导体封装中封装系统结构及制造方法
US8787034B2 (en) 2012-08-27 2014-07-22 Invensas Corporation Co-support system and microelectronic assembly
US9368477B2 (en) 2012-08-27 2016-06-14 Invensas Corporation Co-support circuit panel and microelectronic packages
US8848392B2 (en) 2012-08-27 2014-09-30 Invensas Corporation Co-support module and microelectronic assembly
US8848391B2 (en) 2012-08-27 2014-09-30 Invensas Corporation Co-support component and microelectronic assembly
US9070423B2 (en) 2013-06-11 2015-06-30 Invensas Corporation Single package dual channel memory with co-support
CN103426871B (zh) * 2013-07-25 2017-05-31 上海航天测控通信研究所 一种高密度混合叠层封装结构及其制作方法
US9123555B2 (en) 2013-10-25 2015-09-01 Invensas Corporation Co-support for XFD packaging
CN103558903A (zh) * 2013-11-12 2014-02-05 上海航天测控通信研究所 一种具有抗辐性能的PowerPC计算机模块
US9153560B2 (en) 2014-01-22 2015-10-06 Qualcomm Incorporated Package on package (PoP) integrated device comprising a redistribution layer
US9281296B2 (en) 2014-07-31 2016-03-08 Invensas Corporation Die stacking techniques in BGA memory package for small footprint CPU and memory motherboard design
US9691437B2 (en) 2014-09-25 2017-06-27 Invensas Corporation Compact microelectronic assembly having reduced spacing between controller and memory packages
JP2016192447A (ja) * 2015-03-30 2016-11-10 株式会社東芝 半導体装置
CN108140632B (zh) * 2015-04-14 2020-08-25 华为技术有限公司 一种芯片
US9871019B2 (en) 2015-07-17 2018-01-16 Invensas Corporation Flipped die stack assemblies with leadframe interconnects
US9484080B1 (en) 2015-11-09 2016-11-01 Invensas Corporation High-bandwidth memory application with controlled impedance loading
US10566310B2 (en) * 2016-04-11 2020-02-18 Invensas Corporation Microelectronic packages having stacked die and wire bond interconnects
US9679613B1 (en) 2016-05-06 2017-06-13 Invensas Corporation TFD I/O partition for high-speed, high-density applications
US9953904B1 (en) 2016-10-25 2018-04-24 Nxp Usa, Inc. Electronic component package with heatsink and multiple electronic components
CN108336030A (zh) * 2018-01-16 2018-07-27 奥肯思(北京)科技有限公司 一种多层堆叠系统级封装
KR102699633B1 (ko) 2019-06-25 2024-08-29 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11075147B2 (en) * 2019-07-08 2021-07-27 Texas Instruments Incorporated Stacked die semiconductor package
CN110943077A (zh) * 2019-11-08 2020-03-31 关键禾芯科技股份有限公司 毫米波应用的多颗晶片封装结构
US20240072002A1 (en) * 2022-08-23 2024-02-29 Micron Technology, Inc. Semiconductor devices, assemblies, and associated methods

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0274046A (ja) * 1988-09-09 1990-03-14 Nec Ic Microcomput Syst Ltd 半導体集積回路装置
JP3602888B2 (ja) * 1995-06-14 2004-12-15 松下電器産業株式会社 半導体装置
US5815372A (en) 1997-03-25 1998-09-29 Intel Corporation Packaging multiple dies on a ball grid array substrate
US6271598B1 (en) * 1997-07-29 2001-08-07 Cubic Memory, Inc. Conductive epoxy flip-chip on chip
US6413797B2 (en) 1997-10-09 2002-07-02 Rohm Co., Ltd. Semiconductor device and method for making the same
JP3111312B2 (ja) * 1997-10-29 2000-11-20 ローム株式会社 半導体装置
US6222260B1 (en) * 1998-05-07 2001-04-24 Vlsi Technology, Inc. Integrated circuit device with integral decoupling capacitor
JP3494901B2 (ja) * 1998-09-18 2004-02-09 シャープ株式会社 半導体集積回路装置
JP2001196529A (ja) * 2000-01-17 2001-07-19 Mitsubishi Electric Corp 半導体装置及びその配線方法
JP2001223324A (ja) * 2000-02-10 2001-08-17 Mitsubishi Electric Corp 半導体装置
JP2003197856A (ja) * 2001-12-28 2003-07-11 Oki Electric Ind Co Ltd 半導体装置
JP2003332522A (ja) * 2002-05-17 2003-11-21 Mitsubishi Electric Corp 半導体装置
US6747341B2 (en) * 2002-06-27 2004-06-08 Semiconductor Components Industries, L.L.C. Integrated circuit and laminated leadframe package
JP2005109068A (ja) * 2003-09-30 2005-04-21 Sanyo Electric Co Ltd 半導体装置およびその製造方法
JP4103796B2 (ja) * 2003-12-25 2008-06-18 沖電気工業株式会社 半導体チップパッケージ及びマルチチップパッケージ
JP2005268534A (ja) * 2004-03-18 2005-09-29 Shinko Electric Ind Co Ltd 半導体チップおよび積層型半導体装置
US20050212144A1 (en) * 2004-03-25 2005-09-29 Rugg William L Stacked die for inclusion in standard package technology
US7217597B2 (en) * 2004-06-22 2007-05-15 Micron Technology, Inc. Die stacking scheme
US8212367B2 (en) 2004-11-10 2012-07-03 Sandisk Il Ltd. Integrated circuit die with logically equivalent bonding pads

Also Published As

Publication number Publication date
WO2007146307A3 (en) 2008-03-06
WO2007146307B1 (en) 2008-05-22
US7825521B2 (en) 2010-11-02
TWI429050B (zh) 2014-03-01
US7535110B2 (en) 2009-05-19
US20090212410A1 (en) 2009-08-27
CN101506975A (zh) 2009-08-12
EP2033220B1 (en) 2019-10-16
EP2033220A2 (en) 2009-03-11
TW200807670A (en) 2008-02-01
CN101506975B (zh) 2011-04-06
US20080006948A1 (en) 2008-01-10
WO2007146307A2 (en) 2007-12-21
JP2009540606A (ja) 2009-11-19

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