CN101506975A - 堆叠管芯封装 - Google Patents

堆叠管芯封装 Download PDF

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CN101506975A
CN101506975A CNA2007800304876A CN200780030487A CN101506975A CN 101506975 A CN101506975 A CN 101506975A CN A2007800304876 A CNA2007800304876 A CN A2007800304876A CN 200780030487 A CN200780030487 A CN 200780030487A CN 101506975 A CN101506975 A CN 101506975A
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lead
integrated circuit
wire bonding
electric contacts
bonding integrated
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CN101506975B (zh
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艾尔博·吴
高文生
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Kaiwei International Co
Marvell International Ltd
Marvell Asia Pte Ltd
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Abstract

具有相应方法的集成电路封装包括:衬底,该衬底包括多个第一电触点;第一引线键合集成电路管芯,该第一引线键合集成电路管芯机械耦合到衬底并且包括多个第二电触点,所述多个第二电触点通过多条第一导电线电耦合到衬底的多个第一电触点;倒装芯片集成电路管芯,该倒装芯片集成电路管芯包括多个第三电触点,所述多个第三电触点通过多个导电凸点电耦合到第一引线键合集成电路管芯的多个第二电触点;以及第二引线键合集成电路管芯,该第二引线键合集成电路管芯机械耦合到倒装芯片集成电路管芯并且包括多个第四电触点,所述多个第四电触点通过多条第二导电线电耦合到第一引线键合集成电路管芯的多个第二电触点或衬底的多个第一电触点,或者这两者。

Description

堆叠管芯封装
相关申请的交叉引用
本申请要求2007年5月9日递交的序号为11/801,317的美国专利申请和2006年6月15日递交的序号为60/813,778的美国临时专利申请的权益,这些申请的公开内容通过引用全部结合于此。
技术领域
本发明一般地涉及集成电路制造。更具体地,本发明涉及在单个封装中结合多个集成电路管芯(integrated circuit die)。
背景技术
在集成电路技术中,希望在单个封装中结合多个集成电路管芯,以例如减小封装的印迹并确保管芯经受相同的环境条件。实现这两个目的的一种方式是将管芯彼此堆叠。
发明内容
一般而言,在一个方面中,本发明的特征在于一种集成电路封装,该集成电路封装包括:衬底,该衬底包括多个第一电触点;第一引线键合集成电路管芯,该第一引线键合集成电路管芯机械耦合到衬底并且包括多个第二电触点,所述多个第二电触点通过多条第一导电线电耦合到衬底的多个第一电触点;倒装芯片集成电路管芯,该倒装芯片集成电路管芯包括多个第三电触点,所述多个第三电触点通过多个导电凸点电耦合到第一引线键合集成电路管芯的多个第二电触点;以及第二引线键合集成电路管芯,该第二引线键合集成电路管芯机械耦合到倒装芯片集成电路管芯并且包括多个第四电触点,所述多个第四电触点通过多条第二导电线电耦合到第一引线键合集成电路管芯的多个第二电触点或衬底的多个第一电触点,或者这两者。
在一些实施例中,第一引线键合集成电路管芯包括再分布层,该再分布层包括将多个导电凸点电耦合到第一引线键合集成电路管芯的多个第二电触点的多条迹线。在一些实施例中,第二引线键合集成电路管芯还包括:多个第五电触点,所述多个第五电触点被布置为接近第二引线键合集成电路管芯的第一边缘;以及再分布层,该再分布层包括被布置为接近第二引线键合集成电路管芯的第二边缘的多个第六电触点和将多个第五和第六电触点电耦合的多条迹线;其中,所述多个第四电触点被布置为接近第二引线键合集成电路管芯的第二边缘;并且其中,所述多个第六电触点通过多条第二导电线电耦合到第一引线键合集成电路管芯的多个第二电触点或衬底的多个第一电触点,或者这两者。在一些实施例中,衬底和第一引线键合集成电路管芯通过第一粘合剂而机械耦合;并且其中,倒装芯片集成电路管芯和第二引线键合集成电路管芯通过第二粘合剂而机械耦合。一些实施例包括密封剂,该密封剂围绕第一引线键合集成电路管芯、倒转芯片集成电路管芯、第二引线键合集成电路管芯和导电线。在一些实施例中,第一引线键合集成电路管芯包括片上系统(SoC)电路;其中,倒装芯片集成电路管芯包括闪存;并且其中,第二引线键合集成电路管芯包括同步动态随机存取存储器(SDRAM)。
一般而言,在一个方面中,本发明的特征在于一种用于制造集成电路封装的方法,该方法包括:提供包括多个第一电触点的衬底;提供包括多个第二电触点的第一引线键合集成电路管芯;将第一引线键合集成电路管芯机械耦合到衬底;利用多条第一导电线将第一引线键合集成电路管芯的多个第二电触点电耦合到衬底的多个第一电触点;提供包括多个第三电触点的倒装芯片集成电路管芯;利用多个导电凸点将倒装芯片集成电路管芯的多个第三电触点电耦合到第一引线键合集成电路管芯的多个第二电触点;提供包括多个第四电触点的第二引线键合集成电路管芯;将第二引线键合集成电路管芯机械耦合到倒装芯片集成电路管芯;以及利用多条第二导电线将第二引线键合集成电路管芯的多个第四电触点电耦合到第一引线键合集成电路管芯的多个第二电触点或衬底的多个第一电触点,或者这两者。
一些实施例包括,在第一引线键合集成电路管芯上提供再分布层,该再分布层包括将多个导电凸点电耦合到第一引线键合集成电路管芯的多个第二电触点的迹线。一些实施例包括:提供被布置为接近第二引线键合集成电路管芯的第一边缘的多个第五电触点;提供再分布层,该再分布层包括被布置为接近第二引线键合集成电路管芯的第二边缘的多个第六电触点和将多个第五电触点和多个第六电触点电耦合的迹线;其中,所述多个第四电触点被布置为接近第二引线键合集成电路管芯的第二边缘;以及通过多条第二导电线将再分布层的多个第六电触点电耦合到第一引线键合集成电路管芯的多个第二电触点或衬底的多个第一电触点,或者这两者。一些实施例包括:利用第一粘合剂将衬底和第一引线键合集成电路管芯机械耦合;以及利用第二粘合剂将倒装芯片集成电路管芯和第二引线键合集成电路管芯机械耦合。一些实施例包括包括利用密封剂来围绕第一引线键合集成电路管芯、倒装芯片集成电路管芯、第二引线键合集成电路管芯和导电线。在一些实施例中,第一引线键合集成电路管芯包括片上系统(SoC)电路;其中,倒装芯片集成电路管芯包括闪存;并且其中,第二引线键合集成电路管芯包括同步动态随机存取存储器(SDRAM)。
在以下的附图和描述中给出了一个或多个实现方式的细节。其他细节将从描述和附图以及权利要求中变得显而易见。
附图说明
图1示出了根据本发明一些实施例的包括三个集成电路管芯的堆叠的集成电路封装的侧视图,其不一定是按照比例绘制的。
图2示出了根据本发明一些实施例的图1的再分布层的顶视图。
图3示出了根据本发明一些实施例的包括三个集成电路管芯(在顶部管芯上具有再分布层)的堆叠的集成电路封装的侧视图,其不一定是按照比例绘制的。
图4示出了根据本发明一些实施例的图3的再分布层的顶视图。
图5示出了根据本发明实施例的用于制造集成电路封装的过程。
本说明书中使用的每个标号的(一个或多个)起始数字表示首先出现该标号的图号。
具体实施方式
本发明的实施例提供了包括集成电路管芯的堆叠的集成电路封装。根据一些实施例,集成电路封装包括衬底、在衬底上面的第一引线键合集成电路管芯、在引线键合集成电路管芯上面的倒装芯片集成电路管芯以及在倒装芯片集成电路管芯上面的第二引线键合集成电路管芯。下方的引线键合集成电路管芯的触点被引线键合到衬底触点。倒装芯片集成电路管芯的触点可以是球栅阵列(BGA)触点,它们通过导电凸点连接到第一引线键合集成电路管芯的触点。上方的引线键合集成电路管芯的触点被引线键合到下方的引线键合集成电路管芯的触点或者衬底的触点或者这两者。
可在这些引线键合集成电路管芯的任一者或两者上面使用再分布层。可在下方的引线键合集成电路管芯上使用再分布层以将导电凸点连接到下方的引线键合集成电路管芯上的引线键合焊盘。可在上方的引线键合集成电路管芯上使用另一再分布层以将来自上方引线键合集成电路管芯的一个边缘的引线键合焊盘连接到另一边缘上的引线键合焊盘,这例如发生在上方引线键合集成电路管芯太大以致于只能从一个边缘进行引线键合。
粘合剂可用于将下方的引线键合集成电路管芯机械耦合到衬底,以及将上方的引线键合集成电路管芯机械耦合到倒装芯片集成电路管芯。下方的引线键合集成电路管芯和倒装芯片集成电路管芯之间的机械耦合是通过导电凸点来实现的,但是也可以利用粘合剂通过底层填充技术来增强。这些粘合剂可以包括银环氧树脂等。密封剂可用于围绕集成电路管芯的堆叠和引线键合线。
在一些实施例中,下方的引线键合集成电路管芯包括片上系统(SoC)电路,倒装芯片集成电路管芯包括闪存,并且上方的引线键合集成电路管芯包括同步动态随机存取存储器(SDRAM)。在其他实施例中,可以使用其他集成电路。
图1示出了根据本发明一些实施例的包括三个集成电路管芯的堆叠的集成电路封装100的侧视图,其不一定是按照比例绘制的。集成电路封装100包括衬底102、引线键合集成电路管芯104、倒装芯片集成电路管芯106和引线键合集成电路管芯108。
衬底102具有可连接到其他器件、端子等的电触点110。引线键合集成电路管芯104具有电触点(即,引线键合焊盘)112,电触点112通过导电线124A连接到衬底102的电触点110。导电线124A可被实现为金线等等。
倒装芯片集成电路管芯106具有电触点(即,球)114,电触点114通过导电凸点120连接到引线键合集成电路管芯104的引线键合焊盘112。在一些实施例中,再分布层(RDL)122用于将导电凸点120连接到一些或全部引线键合焊盘112。
图2示出了根据本发明一些实施例的图1的再分布层122的顶视图。再分布层122包括电触点(即,凸点焊盘)202、电触点204和导电迹线206,电触点202用于连接到倒装芯片集成电路管芯106的相应导电凸点120,电触点204用于连接到引线键合集成电路管芯104的相应引线键合焊盘112,导电迹线206连接相应凸点焊盘202和电触点204。
再次参考图1,引线键合集成电路管芯108具有电触点(即,引线键合焊盘)116。引线键合焊盘116可通过导电线124B连接到衬底102的电触点110,或者可通过导电线124C连接到引线键合集成电路管芯104的引线键合焊盘112,或者连接到这两者。导电线124B-C可被实现为金线等等。
在各种实施例中,引线键合集成电路管芯104上的一些或全部引线键合焊盘112被电耦合到引线键合集成电路管芯104内的集成电路。但在一些实施例中,一些引线键合焊盘112未被耦合到该集成电路,而是被设置为连接到集成电路封装100的其他元件之间。例如,一些引线键合焊盘112可用于提供倒装芯片集成电路管芯106的球114与衬底102的电触点110之间的连接。作为另一示例,在不使用导电线124B的实施例中,一些引线键合焊盘112可用于提供引线键合集成电路管芯108的引线键合焊盘116与衬底102的电触点110之间的连接。
集成电路管芯104-108和导电线124可被密封剂126围绕。
尽管图1示出了每个集成电路管芯104-108的两个边缘上的连接,但是三个或更多个边缘可被如图1所示地连接。然而,在一些实施例中,最上方的引线键合集成电路管芯108是如此地大,以致于其边缘中的一个或多个边缘无法被引线键合。在这些实施例中,在最上方的引线键合集成电路管芯108上面使用再分布层以从另一边缘来连接电触点116。
图3示出了根据本发明一些实施例的包括三个集成电路管芯(在顶部管芯上具有再分布层)的堆叠的集成电路封装300的侧视图,其不一定是按照比例绘制的。在图3中可见,顶部管芯(引线键合集成电路管芯108)的左边缘悬垂在下面的引线键合集成电路管芯104之上,使得在该边缘上不可能有用于电触点116的引线键合连接。在这种实施例中,再分布层(RDL)302用于将左边缘上的引线键合焊盘116连接到右边缘上的一些引线键合焊盘116。
图4示出了根据本发明一些实施例的图3的再分布层302的顶视图。再分布层302包括电触点402、电触点404和导电迹线406,电触点402用于连接到引线键合集成电路管芯108的左边缘上的相应引线键合焊盘116,电触点404用于连接到引线键合集成电路管芯108的右边缘上的相应引线键合焊盘116,导电迹线406连接相应导电触电402和404。
图5示出了根据本发明实施例的用于制造集成电路封装的过程500。例如,过程500可用于制造图1的集成电路封装100和图3的集成电路封装300。为了清楚起见,参考图1的集成电路封装100讨论过程500。尽管在所描述的实施例中,过程500的元素是以一种布置呈现的,但是其他实施例可以采用其他布置,相关领域技术人员在阅读该说明书之后将会清楚这些布置。
参考图5,过程500提供包括电触点110的衬底102(步骤502)。过程500还提供包括引线键合焊盘112的引线键合集成电路管芯104(步骤504)。过程500例如利用诸如银环氧树脂等的粘合剂,将引线键合管芯104机械耦合到衬底106(步骤506)。过程500还利用导电线124A将引线键合集成电路管芯104的引线键合焊盘112电耦合到衬底102的电触点110(步骤508)。
过程500还提供包括球114的倒装芯片集成电路管芯106(步骤510),并利用导电凸点120将球114电耦合到引线键合集成电路管芯104的引线键合焊盘112(步骤512)。在一些实施例中,再分布层122用于将引线键合焊盘112电耦合到导电凸点120,如以上参考图2所详细描述的。
过程500还提供包括引线键合焊盘116的引线键合集成电路管芯108(步骤514),并例如利用诸如银环氧树脂等的粘合剂将引线键合集成电路管芯108机械耦合到倒装芯片集成电路管芯106(步骤516)。过程500还利用导电线124C将引线键合集成电路管芯108的引线键合焊盘116电耦合到引线键合集成电路管芯104的引线键合焊盘112(步骤518),或者利用导电线124B将引线键合焊盘116电耦合到衬底102的电触点110(步骤520),或者这两者。在一些实施例中,再分布层302用于将引线键合集成电路管芯108的一个边缘上的引线键合焊盘116电耦合到另一边缘上的引线键合焊盘,如以上参考图4所详细描述的。
最后,过程500利用密封剂126来围绕集成电路管芯104-108和导电线124(步骤522)。
已描述了本发明的许多实现方式。然而,将会了解,在不脱离本发明的精神和范围的情况下可以作出各种修改。因此,其他实现方式在所附权利要求的范围内。
权利要求书(按照条约第19条的修改)
1.一种集成电路封装,包括:
衬底,该衬底包括多个第一电触点;
第一引线键合集成电路管芯,该第一引线键合集成电路管芯机械耦合到所述衬底并且包括多个第二电触点,所述多个第二电触点通过多条第一导电线电耦合到所述衬底的多个第一电触点;
倒装芯片集成电路管芯,该倒装芯片集成电路管芯包括多个第三电触点,所述多个第三电触点通过多个导电凸点电耦合到所述第一引线键合集成电路管芯的多个第二电触点;以及
第二引线键合集成电路管芯,该第二引线键合集成电路管芯机械耦合到所述倒装芯片集成电路管芯并且包括多个第四电触点,所述多个第四电触点通过多条第二导电线电耦合到所述第一引线键合集成电路管芯的多个第二电触点和所述衬底的多个第一电触点。
2.如权利要求1所述的集成电路封装:
其中,所述第一引线键合集成电路管芯包括再分布层,该再分布层包括将所述多个导电凸点电耦合到所述第一引线键合集成电路管芯的多个第二电触点的多条迹线。
3.如权利要求1所述的封装,其中,所述第二引线键合集成电路管芯还包括:
多个第五电触点,所述多个第五电触点被布置为接近所述第二引线键合集成电路管芯的第一边缘;以及
再分布层,包括:
多个第六电触点,所述多个第六电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘,和
将所述多个第五电触点和所述多个第六电触点电耦合的多条迹线;
其中,所述多个第四电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘;并且
其中,所述多个第六电触点通过所述多条第二导电线电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点或所述衬底的所述多个第一电触点,或者这两者。
4.如权利要求1所述的集成电路封装:
其中,所述衬底和所述第一引线键合集成电路管芯通过第一粘合剂而机械耦合;并且
其中,所述倒装芯片集成电路管芯和所述第二引线键合集成电路管芯通过第二粘合剂而机械耦合。
5.如权利要求1所述的集成电路封装,还包括:
密封剂,该密封剂围绕所述第一引线键合集成电路管芯、所述倒转芯片集成电路管芯、所述第二引线键合集成电路管芯和所述导电线。
6.如权利要求1所述的集成电路封装:
其中,所述第一引线键合集成电路管芯包括片上系统(SoC)电路;
其中,所述倒装芯片集成电路管芯包括闪存;并且
其中,所述第二引线键合集成电路管芯包括同步动态随机存取存储器(SDRAM)。
7.一种用于制造集成电路封装的方法,该方法包括:
提供包括多个第一电触点的衬底;
提供包括多个第二电触点的第一引线键合集成电路管芯;
将所述第一引线键合集成电路管芯机械耦合到所述衬底;
利用多条第一导电线将所述第一引线键合集成电路管芯的所述多个第二电触点电耦合到所述衬底的所述多个第一电触点;
提供包括多个第三电触点的倒装芯片集成电路管芯;
利用多个导电凸点将所述倒装芯片集成电路管芯的所述多个第三电触点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点;
提供包括多个第四电触点的第二引线键合集成电路管芯;
将所述第二引线键合集成电路管芯机械耦合到所述倒装芯片集成电路管芯;以及
利用多条第二导电线将所述第二引线键合集成电路管芯的所述多个第四电触点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点和所述衬底的所述多个第一电触点。
8.如权利要求7所述的方法,还包括:
在所述第一引线键合集成电路管芯上提供再分布层,该再分布层包括将所述多个导电凸点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点的迹线。
9.如权利要求7所述的方法,还包括:
提供被布置为接近所述第二引线键合集成电路管芯的第一边缘的多个第五电触点;
提供再分布层,该再分布层包括
多个第六电触点,所述多个第六电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘,和
将所述多个第五电触点和所述多个第六电触点电耦合的迹线;
其中,所述多个第四电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘;以及
通过所述多条第二导电线将所述再分布层的所述多个第六电触点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点或所述衬底的所述多个第一电触点,或者这两者。
10.如权利要求7所述的方法,还包括:
利用第一粘合剂将所述衬底和所述第一引线键合集成电路管芯机械耦合;以及
利用第二粘合剂将所述倒装芯片集成电路管芯和所述第二引线键合集成电路管芯机械耦合。
11.如权利要求7所述的方法,还包括:
利用密封剂来围绕所述第一引线键合集成电路管芯、所述倒装芯片集成电路管芯、所述第二引线键合集成电路管芯和所述导电线。
12.如权利要求7所述的方法:
其中,所述第一引线键合集成电路管芯包括片上系统(SoC)电路;
其中,所述倒装芯片集成电路管芯包括闪存;并且
其中,所述第二引线键合集成电路管芯包括同步动态随机存取存储器(SDRAM)。

Claims (12)

1.一种集成电路封装,包括:
衬底,该衬底包括多个第一电触点;
第一引线键合集成电路管芯,该第一引线键合集成电路管芯机械耦合到所述衬底并且包括多个第二电触点,所述多个第二电触点通过多条第一导电线电耦合到所述衬底的多个第一电触点;
倒装芯片集成电路管芯,该倒装芯片集成电路管芯包括多个第三电触点,所述多个第三电触点通过多个导电凸点电耦合到所述第一引线键合集成电路管芯的多个第二电触点;以及
第二引线键合集成电路管芯,该第二引线键合集成电路管芯机械耦合到所述倒装芯片集成电路管芯并且包括多个第四电触点,所述多个第四电触点通过多条第二导电线电耦合到所述第一引线键合集成电路管芯的多个第二电触点或所述衬底的多个第一电触点,或者这两者。
2.如权利要求1所述的集成电路封装:
其中,所述第一引线键合集成电路管芯包括再分布层,该再分布层包括将所述多个导电凸点电耦合到所述第一引线键合集成电路管芯的多个第二电触点的多条迹线。
3.如权利要求1所述的封装,其中,所述第二引线键合集成电路管芯还包括:
多个第五电触点,所述多个第五电触点被布置为接近所述第二引线键合集成电路管芯的第一边缘;以及
再分布层,包括:
多个第六电触点,所述多个第六电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘,和
将所述多个第五电触点和所述多个第六电触点电耦合的多条迹线;
其中,所述多个第四电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘;并且
其中,所述多个第六电触点通过所述多条第二导电线电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点或所述衬底的所述多个第一电触点,或者这两者。
4.如权利要求1所述的集成电路封装:
其中,所述衬底和所述第一引线键合集成电路管芯通过第一粘合剂而机械耦合;并且
其中,所述倒装芯片集成电路管芯和所述第二引线键合集成电路管芯通过第二粘合剂而机械耦合。
5.如权利要求1所述的集成电路封装,还包括:
密封剂,该密封剂围绕所述第一引线键合集成电路管芯、所述倒转芯片集成电路管芯、所述第二引线键合集成电路管芯和所述导电线。
6.如权利要求1所述的集成电路封装:
其中,所述第一引线键合集成电路管芯包括片上系统(SoC)电路;
其中,所述倒装芯片集成电路管芯包括闪存;并且
其中,所述第二引线键合集成电路管芯包括同步动态随机存取存储器(SDRAM)。
7.一种用于制造集成电路封装的方法,该方法包括:
提供包括多个第一电触点的衬底;
提供包括多个第二电触点的第一引线键合集成电路管芯;
将所述第一引线键合集成电路管芯机械耦合到所述衬底;
利用多条第一导电线将所述第一引线键合集成电路管芯的所述多个第二电触点电耦合到所述衬底的所述多个第一电触点;
提供包括多个第三电触点的倒装芯片集成电路管芯;
利用多个导电凸点将所述倒装芯片集成电路管芯的所述多个第三电触点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点;
提供包括多个第四电触点的第二引线键合集成电路管芯;
将所述第二引线键合集成电路管芯机械耦合到所述倒装芯片集成电路管芯;以及
利用多条第二导电线将所述第二引线键合集成电路管芯的所述多个第四电触点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点或所述衬底的所述多个第一电触点,或者这两者。
8.如权利要求7所述的方法,还包括:
在所述第一引线键合集成电路管芯上提供再分布层,该再分布层包括将所述多个导电凸点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点的迹线。
9.如权利要求7所述的方法,还包括:
提供被布置为接近所述第二引线键合集成电路管芯的第一边缘的多个第五电触点;
提供再分布层,该再分布层包括
多个第六电触点,所述多个第六电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘,和
将所述多个第五电触点和所述多个第六电触点电耦合的迹线;
其中,所述多个第四电触点被布置为接近所述第二引线键合集成电路管芯的第二边缘;以及
通过所述多条第二导电线将所述再分布层的所述多个第六电触点电耦合到所述第一引线键合集成电路管芯的所述多个第二电触点或所述衬底的所述多个第一电触点,或者这两者。
10.如权利要求7所述的方法,还包括:
利用第一粘合剂将所述衬底和所述第一引线键合集成电路管芯机械耦合;以及
利用第二粘合剂将所述倒装芯片集成电路管芯和所述第二引线键合集成电路管芯机械耦合。
11.如权利要求7所述的方法,还包括:
利用密封剂来围绕所述第一引线键合集成电路管芯、所述倒装芯片集成电路管芯、所述第二引线键合集成电路管芯和所述导电线。
12.如权利要求7所述的方法:
其中,所述第一引线键合集成电路管芯包括片上系统(SoC)电路;
其中,所述倒装芯片集成电路管芯包括闪存;并且
其中,所述第二引线键合集成电路管芯包括同步动态随机存取存储器(SDRAM)。
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