JP5314964B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP5314964B2
JP5314964B2 JP2008208472A JP2008208472A JP5314964B2 JP 5314964 B2 JP5314964 B2 JP 5314964B2 JP 2008208472 A JP2008208472 A JP 2008208472A JP 2008208472 A JP2008208472 A JP 2008208472A JP 5314964 B2 JP5314964 B2 JP 5314964B2
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Prior art keywords
film
forming
mixed
silicon oxide
substrate
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Expired - Fee Related
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JP2008208472A
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Japanese (ja)
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JP2010045210A (ja
JP2010045210A5 (enExample
Inventor
貴尚 栄森
信行 三瀬
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Renesas Electronics Corp
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Renesas Electronics Corp
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Priority to JP2008208472A priority Critical patent/JP5314964B2/ja
Priority to TW098117118A priority patent/TWI456697B/zh
Priority to CN2009101584767A priority patent/CN101651120B/zh
Priority to US12/537,875 priority patent/US8288221B2/en
Publication of JP2010045210A publication Critical patent/JP2010045210A/ja
Publication of JP2010045210A5 publication Critical patent/JP2010045210A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2008208472A 2008-08-13 2008-08-13 半導体装置の製造方法 Expired - Fee Related JP5314964B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008208472A JP5314964B2 (ja) 2008-08-13 2008-08-13 半導体装置の製造方法
TW098117118A TWI456697B (zh) 2008-08-13 2009-05-22 半導體裝置之製造方法及半導體裝置
CN2009101584767A CN101651120B (zh) 2008-08-13 2009-07-08 半导体器件的制造方法和半导体器件
US12/537,875 US8288221B2 (en) 2008-08-13 2009-08-07 Method of manufacturing semiconductor device and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008208472A JP5314964B2 (ja) 2008-08-13 2008-08-13 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010045210A JP2010045210A (ja) 2010-02-25
JP2010045210A5 JP2010045210A5 (enExample) 2011-09-15
JP5314964B2 true JP5314964B2 (ja) 2013-10-16

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Country Status (4)

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US (1) US8288221B2 (enExample)
JP (1) JP5314964B2 (enExample)
CN (1) CN101651120B (enExample)
TW (1) TWI456697B (enExample)

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JP5329294B2 (ja) * 2009-04-30 2013-10-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8399344B2 (en) * 2009-10-07 2013-03-19 Asm International N.V. Method for adjusting the threshold voltage of a gate stack of a PMOS device
US8659155B2 (en) 2009-11-05 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming copper pillar bumps
US8343865B2 (en) * 2010-01-21 2013-01-01 Renesas Electronics Corporation Semiconductor device having dual work function metal
JP2011176173A (ja) * 2010-02-25 2011-09-08 Renesas Electronics Corp 半導体装置及びその製造方法
JP5548550B2 (ja) * 2010-07-30 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2012044013A (ja) * 2010-08-20 2012-03-01 Renesas Electronics Corp 半導体装置の製造方法
JP2013098214A (ja) * 2011-10-28 2013-05-20 Elpida Memory Inc 半導体装置及びその製造方法
JP5638559B2 (ja) * 2012-03-26 2014-12-10 株式会社東芝 半導体装置
JP5823353B2 (ja) * 2012-06-20 2015-11-25 株式会社東芝 不揮発性半導体記憶装置の製造方法
EP2717308A1 (en) 2012-10-08 2014-04-09 Imec A method for manufacturing a dual work function semiconductor device
KR20140122585A (ko) * 2013-04-10 2014-10-20 삼성전자주식회사 반도체 소자 및 이의 제조 방법
US9263270B2 (en) * 2013-06-06 2016-02-16 Globalfoundries Inc. Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure
JP6581446B2 (ja) * 2015-09-09 2019-09-25 東芝メモリ株式会社 絶縁膜及び記憶装置
JP2017092191A (ja) * 2015-11-06 2017-05-25 株式会社デンソー 炭化珪素半導体装置
CN106952917A (zh) * 2016-01-07 2017-07-14 中国科学院上海微系统与信息技术研究所 一种soi六晶体管sram单元及其制作方法
CN113809012B (zh) * 2020-06-12 2024-02-09 长鑫存储技术有限公司 半导体器件及其制造方法

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KR19990014155A (ko) * 1997-07-24 1999-02-25 윌리엄 비. 켐플러 고 유전율 실리케이트 게이트 유전체
JP3944367B2 (ja) * 2001-02-06 2007-07-11 松下電器産業株式会社 絶縁膜の形成方法及び半導体装置の製造方法
JP4895430B2 (ja) 2001-03-22 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US7326988B2 (en) * 2002-07-02 2008-02-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
WO2004008544A1 (ja) * 2002-07-16 2004-01-22 Nec Corporation 半導体装置、その製造方法およびその製造装置
JPWO2005038929A1 (ja) * 2003-10-15 2007-02-08 日本電気株式会社 半導体装置の製造方法
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JP4005055B2 (ja) * 2004-05-25 2007-11-07 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
US7060568B2 (en) * 2004-06-30 2006-06-13 Intel Corporation Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit
JP4792716B2 (ja) 2004-07-06 2011-10-12 日本電気株式会社 半導体装置およびその製造方法
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JP4850458B2 (ja) 2005-09-12 2012-01-11 富士通セミコンダクター株式会社 半導体装置およびその製造方法
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JP2007243009A (ja) * 2006-03-10 2007-09-20 Renesas Technology Corp 半導体装置およびその製造方法
JPWO2007116470A1 (ja) * 2006-03-31 2009-08-20 富士通株式会社 半導体装置及びその製造方法
JPWO2007138693A1 (ja) * 2006-05-31 2009-10-01 富士通株式会社 半導体デバイスおよびその作製方法
JP4282691B2 (ja) * 2006-06-07 2009-06-24 株式会社東芝 半導体装置
JP2008311464A (ja) * 2007-06-15 2008-12-25 National Institute Of Advanced Industrial & Technology 半導体装置とその製造方法
TWI492367B (zh) * 2007-12-03 2015-07-11 瑞薩電子股份有限公司 Ｃｍｏｓ半導體裝置之製造方法

Also Published As

Publication number Publication date
TWI456697B (zh) 2014-10-11
JP2010045210A (ja) 2010-02-25
TW201013847A (en) 2010-04-01
CN101651120A (zh) 2010-02-17
US8288221B2 (en) 2012-10-16
CN101651120B (zh) 2013-10-02
US20100038729A1 (en) 2010-02-18

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