JP5305901B2 - Ｍｉｍキャパシタおよびその製造方法 - Google Patents

Ｍｉｍキャパシタおよびその製造方法 Download PDF

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Publication number
JP5305901B2
JP5305901B2 JP2008506531A JP2008506531A JP5305901B2 JP 5305901 B2 JP5305901 B2 JP 5305901B2 JP 2008506531 A JP2008506531 A JP 2008506531A JP 2008506531 A JP2008506531 A JP 2008506531A JP 5305901 B2 JP5305901 B2 JP 5305901B2
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dielectric layer
trench
core conductor
top surface
dielectric
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Expired - Fee Related
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JP2008506531A
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Japanese (ja)
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JP2008537335A (ja
JP2008537335A5 (enExample
Inventor
ヤン、チーチャノ
クレヴェンガー、ローレンス、エイ
ダルトン、ティモシー、ジェイ
スー、ルイス、シー
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2008506531A 2005-04-15 2006-04-07 Ｍｉｍキャパシタおよびその製造方法 Expired - Fee Related JP5305901B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/106,887 US7223654B2 (en) 2005-04-15 2005-04-15 MIM capacitor and method of fabricating same
US11/106,887 2005-04-15
PCT/US2006/012904 WO2006113158A2 (en) 2005-04-15 2006-04-07 Mim capacitor and method of fabricating same

Publications (3)

Publication Number Publication Date
JP2008537335A JP2008537335A (ja) 2008-09-11
JP2008537335A5 JP2008537335A5 (enExample) 2009-02-12
JP5305901B2 true JP5305901B2 (ja) 2013-10-02

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Family Applications (1)

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JP2008506531A Expired - Fee Related JP5305901B2 (ja) 2005-04-15 2006-04-07 Ｍｉｍキャパシタおよびその製造方法

Country Status (6)

Country Link
US (2) US7223654B2 (enExample)
EP (1) EP1875499A4 (enExample)
JP (1) JP5305901B2 (enExample)
CN (1) CN101160655B (enExample)
TW (1) TW200636814A (enExample)
WO (1) WO2006113158A2 (enExample)

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KR100737155B1 (ko) * 2006-08-28 2007-07-06 동부일렉트로닉스 주식회사 반도체 소자의 고주파 인덕터 제조 방법
US7871927B2 (en) * 2006-10-17 2011-01-18 Cufer Asset Ltd. L.L.C. Wafer via formation
US7666781B2 (en) * 2006-11-22 2010-02-23 International Business Machines Corporation Interconnect structures with improved electromigration resistance and methods for forming such interconnect structures
US7833893B2 (en) * 2007-07-10 2010-11-16 International Business Machines Corporation Method for forming conductive structures
US8441097B2 (en) * 2009-12-23 2013-05-14 Intel Corporation Methods to form memory devices having a capacitor with a recessed electrode
CN101807517B (zh) * 2010-02-25 2011-09-21 中国科学院上海微系统与信息技术研究所 形成铜互连mim电容器结构的方法
US20120086101A1 (en) * 2010-10-06 2012-04-12 International Business Machines Corporation Integrated circuit and interconnect, and method of fabricating same
KR101767107B1 (ko) * 2011-01-31 2017-08-10 삼성전자주식회사 반도체 장치의 캐패시터
US8492874B2 (en) 2011-02-04 2013-07-23 Qualcomm Incorporated High density metal-insulator-metal trench capacitor
US20120276662A1 (en) * 2011-04-27 2012-11-01 Iravani Hassan G Eddy current monitoring of metal features
CN102420174B (zh) * 2011-06-07 2013-09-11 上海华力微电子有限公司 一种双大马士革工艺中通孔填充的方法
CN102420106B (zh) * 2011-06-15 2013-12-04 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺
CN102420108B (zh) * 2011-06-15 2013-06-05 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容制造工艺及结构
US8546914B2 (en) * 2011-07-19 2013-10-01 United Microelectronics Corp. Embedded capacitor structure and the forming method thereof
US8975910B2 (en) * 2012-04-27 2015-03-10 International Business Machines Corporation Through-silicon-via with sacrificial dielectric line
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US9455188B2 (en) 2013-01-18 2016-09-27 Globalfoundries Inc. Through silicon via device having low stress, thin film gaps and methods for forming the same
JP6079279B2 (ja) * 2013-02-05 2017-02-15 三菱電機株式会社 半導体装置、半導体装置の製造方法
US9385177B2 (en) * 2013-10-31 2016-07-05 Stmicroelectronics, Inc. Technique for fabrication of microelectronic capacitors and resistors
CN104681403A (zh) * 2013-11-26 2015-06-03 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US9276057B2 (en) * 2014-01-27 2016-03-01 United Microelectronics Corp. Capacitor structure and method of manufacturing the same
US20160148868A1 (en) * 2014-11-25 2016-05-26 International Business Machines Corporation Precision intralevel metal capacitor fabrication
US9620582B2 (en) 2015-01-27 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal (MIM) capacitors and forming methods
US9818689B1 (en) * 2016-04-25 2017-11-14 Globalfoundries Inc. Metal-insulator-metal capacitor and methods of fabrication
CN105963857B (zh) * 2016-05-26 2019-07-05 中国科学院微电子研究所 一种神经电极结构及其制造方法
US10008558B1 (en) 2017-01-05 2018-06-26 International Business Machines Corporation Advanced metal insulator metal capacitor
US10032855B1 (en) 2017-01-05 2018-07-24 International Business Machines Corporation Advanced metal insulator metal capacitor
CN109037444B (zh) * 2017-06-09 2022-01-04 华邦电子股份有限公司 电容器结构及其制造方法
US10236206B2 (en) * 2017-07-03 2019-03-19 Globalfoundries Inc. Interconnects with hybrid metallization
CN107758607A (zh) * 2017-09-29 2018-03-06 湖南大学 一种高深宽比高保形纳米级正型结构的制备方法
US20190157213A1 (en) * 2017-11-20 2019-05-23 Globalfoundries Inc. Semiconductor structure with substantially straight contact profile
DE102018102448B4 (de) * 2017-11-30 2023-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Bildung und Struktur leitfähiger Merkmale
US10650978B2 (en) * 2017-12-15 2020-05-12 Micron Technology, Inc. Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb
JP7179634B2 (ja) * 2019-02-07 2022-11-29 株式会社東芝 コンデンサ及びコンデンサモジュール
CN111834332B (zh) * 2019-04-16 2022-11-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102019214567B4 (de) 2019-09-24 2023-11-02 Zf Friedrichshafen Ag Verfahren und Vorrichtung zum Betreiben eines gepulsten Lidarsensors
US11437312B2 (en) 2020-02-07 2022-09-06 International Business Machines Corporation High performance metal insulator metal capacitor
EP3901997A1 (en) * 2020-04-22 2021-10-27 Murata Manufacturing Co., Ltd. Electrical device for characterizing a deposition step such as atomic layer deposition (ald), and corresponding methods of fabricating and characterizing
US11715594B2 (en) 2021-05-27 2023-08-01 International Business Machines Corporation Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch
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Also Published As

Publication number Publication date
EP1875499A2 (en) 2008-01-09
CN101160655B (zh) 2010-05-19
US20060234443A1 (en) 2006-10-19
JP2008537335A (ja) 2008-09-11
WO2006113158A2 (en) 2006-10-26
US7223654B2 (en) 2007-05-29
US20070117313A1 (en) 2007-05-24
EP1875499A4 (en) 2009-11-04
CN101160655A (zh) 2008-04-09
TW200636814A (en) 2006-10-16
US7821051B2 (en) 2010-10-26
WO2006113158A3 (en) 2007-03-01

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