TW200636814A - MIM capacitor and method of fabricating same - Google Patents

MIM capacitor and method of fabricating same

Info

Publication number
TW200636814A
TW200636814A TW095112009A TW95112009A TW200636814A TW 200636814 A TW200636814 A TW 200636814A TW 095112009 A TW095112009 A TW 095112009A TW 95112009 A TW95112009 A TW 95112009A TW 200636814 A TW200636814 A TW 200636814A
Authority
TW
Taiwan
Prior art keywords
mim capacitor
trench
dielectric layer
conductive liner
conformal conductive
Prior art date
Application number
TW095112009A
Other languages
English (en)
Chinese (zh)
Inventor
Chih-Chao Yang
Lawrence A Clevenger
Timothy J Dalton
Louis C Hsu
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200636814A publication Critical patent/TW200636814A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW095112009A 2005-04-15 2006-04-04 MIM capacitor and method of fabricating same TW200636814A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/106,887 US7223654B2 (en) 2005-04-15 2005-04-15 MIM capacitor and method of fabricating same

Publications (1)

Publication Number Publication Date
TW200636814A true TW200636814A (en) 2006-10-16

Family

ID=37109041

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095112009A TW200636814A (en) 2005-04-15 2006-04-04 MIM capacitor and method of fabricating same

Country Status (6)

Country Link
US (2) US7223654B2 (enExample)
EP (1) EP1875499A4 (enExample)
JP (1) JP5305901B2 (enExample)
CN (1) CN101160655B (enExample)
TW (1) TW200636814A (enExample)
WO (1) WO2006113158A2 (enExample)

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KR101175393B1 (ko) * 2006-10-17 2012-08-20 쿠퍼 에셋 엘티디. 엘.엘.씨. 웨이퍼 비아 형성
US7666781B2 (en) * 2006-11-22 2010-02-23 International Business Machines Corporation Interconnect structures with improved electromigration resistance and methods for forming such interconnect structures
US7833893B2 (en) * 2007-07-10 2010-11-16 International Business Machines Corporation Method for forming conductive structures
US8441097B2 (en) * 2009-12-23 2013-05-14 Intel Corporation Methods to form memory devices having a capacitor with a recessed electrode
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US20120086101A1 (en) * 2010-10-06 2012-04-12 International Business Machines Corporation Integrated circuit and interconnect, and method of fabricating same
KR101767107B1 (ko) * 2011-01-31 2017-08-10 삼성전자주식회사 반도체 장치의 캐패시터
US8492874B2 (en) 2011-02-04 2013-07-23 Qualcomm Incorporated High density metal-insulator-metal trench capacitor
US20120276662A1 (en) * 2011-04-27 2012-11-01 Iravani Hassan G Eddy current monitoring of metal features
CN102420174B (zh) * 2011-06-07 2013-09-11 上海华力微电子有限公司 一种双大马士革工艺中通孔填充的方法
CN102420106B (zh) * 2011-06-15 2013-12-04 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺
CN102420108B (zh) * 2011-06-15 2013-06-05 上海华力微电子有限公司 铜大马士革工艺金属-绝缘层-金属电容制造工艺及结构
US8546914B2 (en) * 2011-07-19 2013-10-01 United Microelectronics Corp. Embedded capacitor structure and the forming method thereof
US8975910B2 (en) * 2012-04-27 2015-03-10 International Business Machines Corporation Through-silicon-via with sacrificial dielectric line
FR2994019B1 (fr) 2012-07-25 2016-05-06 Commissariat Energie Atomique Procede pour la realisation d'une capacite
US9455188B2 (en) * 2013-01-18 2016-09-27 Globalfoundries Inc. Through silicon via device having low stress, thin film gaps and methods for forming the same
JP6079279B2 (ja) * 2013-02-05 2017-02-15 三菱電機株式会社 半導体装置、半導体装置の製造方法
US9385177B2 (en) * 2013-10-31 2016-07-05 Stmicroelectronics, Inc. Technique for fabrication of microelectronic capacitors and resistors
CN104681403A (zh) * 2013-11-26 2015-06-03 中芯国际集成电路制造(上海)有限公司 半导体器件及其形成方法
US9276057B2 (en) * 2014-01-27 2016-03-01 United Microelectronics Corp. Capacitor structure and method of manufacturing the same
US20160148868A1 (en) * 2014-11-25 2016-05-26 International Business Machines Corporation Precision intralevel metal capacitor fabrication
US9620582B2 (en) 2015-01-27 2017-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Metal-insulator-metal (MIM) capacitors and forming methods
US9818689B1 (en) * 2016-04-25 2017-11-14 Globalfoundries Inc. Metal-insulator-metal capacitor and methods of fabrication
CN105963857B (zh) * 2016-05-26 2019-07-05 中国科学院微电子研究所 一种神经电极结构及其制造方法
US10008558B1 (en) 2017-01-05 2018-06-26 International Business Machines Corporation Advanced metal insulator metal capacitor
US10032855B1 (en) 2017-01-05 2018-07-24 International Business Machines Corporation Advanced metal insulator metal capacitor
CN109037444B (zh) * 2017-06-09 2022-01-04 华邦电子股份有限公司 电容器结构及其制造方法
US10236206B2 (en) * 2017-07-03 2019-03-19 Globalfoundries Inc. Interconnects with hybrid metallization
CN107758607A (zh) * 2017-09-29 2018-03-06 湖南大学 一种高深宽比高保形纳米级正型结构的制备方法
US20190157213A1 (en) * 2017-11-20 2019-05-23 Globalfoundries Inc. Semiconductor structure with substantially straight contact profile
DE102018102448B4 (de) * 2017-11-30 2023-06-15 Taiwan Semiconductor Manufacturing Co., Ltd. Bildung und Struktur leitfähiger Merkmale
US10650978B2 (en) * 2017-12-15 2020-05-12 Micron Technology, Inc. Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb
JP7179634B2 (ja) * 2019-02-07 2022-11-29 株式会社東芝 コンデンサ及びコンデンサモジュール
CN111834332B (zh) * 2019-04-16 2022-11-01 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
DE102019214567B4 (de) 2019-09-24 2023-11-02 Zf Friedrichshafen Ag Verfahren und Vorrichtung zum Betreiben eines gepulsten Lidarsensors
US11437312B2 (en) 2020-02-07 2022-09-06 International Business Machines Corporation High performance metal insulator metal capacitor
EP3901997A1 (en) * 2020-04-22 2021-10-27 Murata Manufacturing Co., Ltd. Electrical device for characterizing a deposition step such as atomic layer deposition (ald), and corresponding methods of fabricating and characterizing
US11715594B2 (en) 2021-05-27 2023-08-01 International Business Machines Corporation Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch
US11676892B2 (en) 2021-09-15 2023-06-13 International Business Machines Corporation Three-dimensional metal-insulator-metal capacitor embedded in seal structure

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US6346454B1 (en) * 1999-01-12 2002-02-12 Agere Systems Guardian Corp. Method of making dual damascene interconnect structure and metal electrode capacitor
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US6329234B1 (en) 2000-07-24 2001-12-11 Taiwan Semiconductor Manufactuirng Company Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
US6461914B1 (en) 2001-08-29 2002-10-08 Motorola, Inc. Process for making a MIM capacitor
KR100471164B1 (ko) * 2002-03-26 2005-03-09 삼성전자주식회사 금속-절연체-금속 캐패시터를 갖는 반도체장치 및 그제조방법
US6720608B2 (en) * 2002-05-22 2004-04-13 United Microelectronics Corp. Metal-insulator-metal capacitor structure
US6670237B1 (en) 2002-08-01 2003-12-30 Chartered Semiconductor Manufacturing Ltd. Method for an advanced MIM capacitor
US6670274B1 (en) * 2002-10-01 2003-12-30 Taiwan Semiconductor Manufacturing Company Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure
JP2004296802A (ja) * 2003-03-27 2004-10-21 Renesas Technology Corp 半導体装置およびその製造方法
KR100532455B1 (ko) * 2003-07-29 2005-11-30 삼성전자주식회사 Ｍｉｍ 커패시터 및 배선 구조를 포함하는 반도체 장치의제조 방법
KR100545202B1 (ko) * 2003-10-06 2006-01-24 동부아남반도체 주식회사 캐패시터 제조 방법

Also Published As

Publication number Publication date
WO2006113158A3 (en) 2007-03-01
US20060234443A1 (en) 2006-10-19
EP1875499A2 (en) 2008-01-09
WO2006113158A2 (en) 2006-10-26
JP2008537335A (ja) 2008-09-11
US20070117313A1 (en) 2007-05-24
CN101160655A (zh) 2008-04-09
US7821051B2 (en) 2010-10-26
JP5305901B2 (ja) 2013-10-02
CN101160655B (zh) 2010-05-19
EP1875499A4 (en) 2009-11-04
US7223654B2 (en) 2007-05-29

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