JP2008537335A5 - - Google Patents
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- Publication number
- JP2008537335A5 JP2008537335A5 JP2008506531A JP2008506531A JP2008537335A5 JP 2008537335 A5 JP2008537335 A5 JP 2008537335A5 JP 2008506531 A JP2008506531 A JP 2008506531A JP 2008506531 A JP2008506531 A JP 2008506531A JP 2008537335 A5 JP2008537335 A5 JP 2008537335A5
- Authority
- JP
- Japan
- Prior art keywords
- trench
- dielectric layer
- core conductor
- forming
- top surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims 31
- 238000000034 method Methods 0.000 claims 17
- 239000012212 insulator Substances 0.000 claims 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 8
- 239000000463 material Substances 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 239000000758 substrate Substances 0.000 claims 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
- 239000003990 capacitor Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229920000642 polymer Polymers 0.000 claims 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- 239000000377 silicon dioxide Substances 0.000 claims 4
- 235000012239 silicon dioxide Nutrition 0.000 claims 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 2
- 229910016570 AlCu Inorganic materials 0.000 claims 2
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 claims 2
- 229910008482 TiSiN Inorganic materials 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 229910052914 metal silicate Inorganic materials 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims 2
- 238000005498 polishing Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/106,887 US7223654B2 (en) | 2005-04-15 | 2005-04-15 | MIM capacitor and method of fabricating same |
| US11/106,887 | 2005-04-15 | ||
| PCT/US2006/012904 WO2006113158A2 (en) | 2005-04-15 | 2006-04-07 | Mim capacitor and method of fabricating same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008537335A JP2008537335A (ja) | 2008-09-11 |
| JP2008537335A5 true JP2008537335A5 (enExample) | 2009-02-12 |
| JP5305901B2 JP5305901B2 (ja) | 2013-10-02 |
Family
ID=37109041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008506531A Expired - Fee Related JP5305901B2 (ja) | 2005-04-15 | 2006-04-07 | Ｍｉｍキャパシタおよびその製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7223654B2 (enExample) |
| EP (1) | EP1875499A4 (enExample) |
| JP (1) | JP5305901B2 (enExample) |
| CN (1) | CN101160655B (enExample) |
| TW (1) | TW200636814A (enExample) |
| WO (1) | WO2006113158A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100644525B1 (ko) * | 2004-12-27 | 2006-11-10 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속-절연체-금속 커패시터의 제조 방법 |
| JP2007012943A (ja) * | 2005-06-30 | 2007-01-18 | Toshiba Corp | 基板処理方法 |
| US7629690B2 (en) * | 2005-12-05 | 2009-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual damascene process without an etch stop layer |
| KR100672684B1 (ko) * | 2005-12-28 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 커패시터 및 그의 제조방법 |
| US7880268B2 (en) * | 2006-05-12 | 2011-02-01 | Stmicroelectronics S.A. | MIM capacitor |
| US8133792B2 (en) * | 2006-07-04 | 2012-03-13 | United Microelectronics Corp. | Method for reducing capacitance variation between capacitors |
| KR100737155B1 (ko) * | 2006-08-28 | 2007-07-06 | 동부일렉트로닉스 주식회사 | 반도체 소자의 고주파 인덕터 제조 방법 |
| US7871927B2 (en) * | 2006-10-17 | 2011-01-18 | Cufer Asset Ltd. L.L.C. | Wafer via formation |
| US7666781B2 (en) * | 2006-11-22 | 2010-02-23 | International Business Machines Corporation | Interconnect structures with improved electromigration resistance and methods for forming such interconnect structures |
| US7833893B2 (en) * | 2007-07-10 | 2010-11-16 | International Business Machines Corporation | Method for forming conductive structures |
| US8441097B2 (en) * | 2009-12-23 | 2013-05-14 | Intel Corporation | Methods to form memory devices having a capacitor with a recessed electrode |
| CN101807517B (zh) * | 2010-02-25 | 2011-09-21 | 中国科学院上海微系统与信息技术研究所 | 形成铜互连mim电容器结构的方法 |
| US20120086101A1 (en) * | 2010-10-06 | 2012-04-12 | International Business Machines Corporation | Integrated circuit and interconnect, and method of fabricating same |
| KR101767107B1 (ko) * | 2011-01-31 | 2017-08-10 | 삼성전자주식회사 | 반도체 장치의 캐패시터 |
| US8492874B2 (en) | 2011-02-04 | 2013-07-23 | Qualcomm Incorporated | High density metal-insulator-metal trench capacitor |
| US20120276662A1 (en) * | 2011-04-27 | 2012-11-01 | Iravani Hassan G | Eddy current monitoring of metal features |
| CN102420174B (zh) * | 2011-06-07 | 2013-09-11 | 上海华力微电子有限公司 | 一种双大马士革工艺中通孔填充的方法 |
| CN102420106B (zh) * | 2011-06-15 | 2013-12-04 | 上海华力微电子有限公司 | 铜大马士革工艺金属-绝缘层-金属电容结构及制造工艺 |
| CN102420108B (zh) * | 2011-06-15 | 2013-06-05 | 上海华力微电子有限公司 | 铜大马士革工艺金属-绝缘层-金属电容制造工艺及结构 |
| US8546914B2 (en) * | 2011-07-19 | 2013-10-01 | United Microelectronics Corp. | Embedded capacitor structure and the forming method thereof |
| US8975910B2 (en) * | 2012-04-27 | 2015-03-10 | International Business Machines Corporation | Through-silicon-via with sacrificial dielectric line |
| FR2994019B1 (fr) | 2012-07-25 | 2016-05-06 | Commissariat Energie Atomique | Procede pour la realisation d'une capacite |
| US9455188B2 (en) | 2013-01-18 | 2016-09-27 | Globalfoundries Inc. | Through silicon via device having low stress, thin film gaps and methods for forming the same |
| JP6079279B2 (ja) * | 2013-02-05 | 2017-02-15 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
| US9385177B2 (en) * | 2013-10-31 | 2016-07-05 | Stmicroelectronics, Inc. | Technique for fabrication of microelectronic capacitors and resistors |
| CN104681403A (zh) * | 2013-11-26 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
| US9276057B2 (en) * | 2014-01-27 | 2016-03-01 | United Microelectronics Corp. | Capacitor structure and method of manufacturing the same |
| US20160148868A1 (en) * | 2014-11-25 | 2016-05-26 | International Business Machines Corporation | Precision intralevel metal capacitor fabrication |
| US9620582B2 (en) | 2015-01-27 | 2017-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal-insulator-metal (MIM) capacitors and forming methods |
| US9818689B1 (en) * | 2016-04-25 | 2017-11-14 | Globalfoundries Inc. | Metal-insulator-metal capacitor and methods of fabrication |
| CN105963857B (zh) * | 2016-05-26 | 2019-07-05 | 中国科学院微电子研究所 | 一种神经电极结构及其制造方法 |
| US10008558B1 (en) | 2017-01-05 | 2018-06-26 | International Business Machines Corporation | Advanced metal insulator metal capacitor |
| US10032855B1 (en) | 2017-01-05 | 2018-07-24 | International Business Machines Corporation | Advanced metal insulator metal capacitor |
| CN109037444B (zh) * | 2017-06-09 | 2022-01-04 | 华邦电子股份有限公司 | 电容器结构及其制造方法 |
| US10236206B2 (en) * | 2017-07-03 | 2019-03-19 | Globalfoundries Inc. | Interconnects with hybrid metallization |
| CN107758607A (zh) * | 2017-09-29 | 2018-03-06 | 湖南大学 | 一种高深宽比高保形纳米级正型结构的制备方法 |
| US20190157213A1 (en) * | 2017-11-20 | 2019-05-23 | Globalfoundries Inc. | Semiconductor structure with substantially straight contact profile |
| DE102018102448B4 (de) * | 2017-11-30 | 2023-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bildung und Struktur leitfähiger Merkmale |
| US10650978B2 (en) * | 2017-12-15 | 2020-05-12 | Micron Technology, Inc. | Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb |
| JP7179634B2 (ja) * | 2019-02-07 | 2022-11-29 | 株式会社東芝 | コンデンサ及びコンデンサモジュール |
| CN111834332B (zh) * | 2019-04-16 | 2022-11-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| DE102019214567B4 (de) | 2019-09-24 | 2023-11-02 | Zf Friedrichshafen Ag | Verfahren und Vorrichtung zum Betreiben eines gepulsten Lidarsensors |
| US11437312B2 (en) | 2020-02-07 | 2022-09-06 | International Business Machines Corporation | High performance metal insulator metal capacitor |
| EP3901997A1 (en) * | 2020-04-22 | 2021-10-27 | Murata Manufacturing Co., Ltd. | Electrical device for characterizing a deposition step such as atomic layer deposition (ald), and corresponding methods of fabricating and characterizing |
| US11715594B2 (en) | 2021-05-27 | 2023-08-01 | International Business Machines Corporation | Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch |
| US11676892B2 (en) | 2021-09-15 | 2023-06-13 | International Business Machines Corporation | Three-dimensional metal-insulator-metal capacitor embedded in seal structure |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08279596A (ja) * | 1995-04-05 | 1996-10-22 | Mitsubishi Electric Corp | 集積回路装置，及びその製造方法 |
| US5879985A (en) * | 1997-03-26 | 1999-03-09 | International Business Machines Corporation | Crown capacitor using a tapered etch of a damascene lower electrode |
| JP3228181B2 (ja) * | 1997-05-12 | 2001-11-12 | ヤマハ株式会社 | 平坦配線形成法 |
| US6346454B1 (en) * | 1999-01-12 | 2002-02-12 | Agere Systems Guardian Corp. | Method of making dual damascene interconnect structure and metal electrode capacitor |
| US6452251B1 (en) * | 2000-03-31 | 2002-09-17 | International Business Machines Corporation | Damascene metal capacitor |
| US6329234B1 (en) * | 2000-07-24 | 2001-12-11 | Taiwan Semiconductor Manufactuirng Company | Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow |
| US6461914B1 (en) * | 2001-08-29 | 2002-10-08 | Motorola, Inc. | Process for making a MIM capacitor |
| KR100471164B1 (ko) * | 2002-03-26 | 2005-03-09 | 삼성전자주식회사 | 금속-절연체-금속 캐패시터를 갖는 반도체장치 및 그제조방법 |
| US6720608B2 (en) * | 2002-05-22 | 2004-04-13 | United Microelectronics Corp. | Metal-insulator-metal capacitor structure |
| US6670237B1 (en) * | 2002-08-01 | 2003-12-30 | Chartered Semiconductor Manufacturing Ltd. | Method for an advanced MIM capacitor |
| US6670274B1 (en) * | 2002-10-01 | 2003-12-30 | Taiwan Semiconductor Manufacturing Company | Method of forming a copper damascene structure comprising a recessed copper-oxide-free initial copper structure |
| JP2004296802A (ja) * | 2003-03-27 | 2004-10-21 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| KR100532455B1 (ko) * | 2003-07-29 | 2005-11-30 | 삼성전자주식회사 | Ｍｉｍ 커패시터 및 배선 구조를 포함하는 반도체 장치의제조 방법 |
| KR100545202B1 (ko) * | 2003-10-06 | 2006-01-24 | 동부아남반도체 주식회사 | 캐패시터 제조 방법 |
-
2005
- 2005-04-15 US US11/106,887 patent/US7223654B2/en not_active Expired - Fee Related
-
2006
- 2006-04-04 TW TW095112009A patent/TW200636814A/zh unknown
- 2006-04-07 CN CN200680012051.XA patent/CN101160655B/zh active Active
- 2006-04-07 EP EP06749449A patent/EP1875499A4/en not_active Withdrawn
- 2006-04-07 WO PCT/US2006/012904 patent/WO2006113158A2/en not_active Ceased
- 2006-04-07 JP JP2008506531A patent/JP5305901B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-23 US US11/625,883 patent/US7821051B2/en active Active
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