JP5305737B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5305737B2
JP5305737B2 JP2008137405A JP2008137405A JP5305737B2 JP 5305737 B2 JP5305737 B2 JP 5305737B2 JP 2008137405 A JP2008137405 A JP 2008137405A JP 2008137405 A JP2008137405 A JP 2008137405A JP 5305737 B2 JP5305737 B2 JP 5305737B2
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film
substrate
layer
semiconductor
semiconductor layer
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JP2009010356A (ja
JP2009010356A5 (enExample
Inventor
聡志 鳥海
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008137405A priority Critical patent/JP5305737B2/ja
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Publication of JP2009010356A5 publication Critical patent/JP2009010356A5/ja
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0214Manufacture or treatment of multiple TFTs using temporary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6758Thin-film transistors [TFT] characterised by the insulating substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/125Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
JP2008137405A 2007-05-31 2008-05-27 半導体装置 Active JP5305737B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008137405A JP5305737B2 (ja) 2007-05-31 2008-05-27 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007144360 2007-05-31
JP2007144360 2007-05-31
JP2008137405A JP5305737B2 (ja) 2007-05-31 2008-05-27 半導体装置

Related Child Applications (1)

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JP2013132333A Division JP5745723B2 (ja) 2007-05-31 2013-06-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2009010356A JP2009010356A (ja) 2009-01-15
JP2009010356A5 JP2009010356A5 (enExample) 2011-04-21
JP5305737B2 true JP5305737B2 (ja) 2013-10-02

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JP2008137405A Active JP5305737B2 (ja) 2007-05-31 2008-05-27 半導体装置
JP2013132333A Expired - Fee Related JP5745723B2 (ja) 2007-05-31 2013-06-25 半導体装置

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Country Status (3)

Country Link
US (2) US7897482B2 (enExample)
JP (2) JP5305737B2 (enExample)
KR (2) KR101442523B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2013236093A (ja) * 2007-05-31 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置、表示モジュール及び電子機器。

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2013236093A (ja) * 2007-05-31 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置、表示モジュール及び電子機器。

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Publication number Publication date
JP2009010356A (ja) 2009-01-15
JP5745723B2 (ja) 2015-07-08
US8487342B2 (en) 2013-07-16
KR101442522B1 (ko) 2014-09-26
KR20080106048A (ko) 2008-12-04
JP2013236093A (ja) 2013-11-21
US7897482B2 (en) 2011-03-01
US20110101363A1 (en) 2011-05-05
US20090114915A1 (en) 2009-05-07
KR20140068841A (ko) 2014-06-09
KR101442523B1 (ko) 2014-09-22

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