JP5296181B2 - 寄生振動を低減したトランジスタ増幅器 - Google Patents
寄生振動を低減したトランジスタ増幅器 Download PDFInfo
- Publication number
- JP5296181B2 JP5296181B2 JP2011266764A JP2011266764A JP5296181B2 JP 5296181 B2 JP5296181 B2 JP 5296181B2 JP 2011266764 A JP2011266764 A JP 2011266764A JP 2011266764 A JP2011266764 A JP 2011266764A JP 5296181 B2 JP5296181 B2 JP 5296181B2
- Authority
- JP
- Japan
- Prior art keywords
- input node
- capacitor
- transistor
- filters
- transistor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000010355 oscillation Effects 0.000 title description 28
- 230000003071 parasitic effect Effects 0.000 title description 11
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/366—Multiple MOSFETs are coupled in parallel
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/75—Indexing scheme relating to amplifiers the amplifier stage being a common source configuration MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
- Junction Field-Effect Transistors (AREA)
Description
15” トランジスタセル
17 制御電極
18” フィルタ
20” 入力ノード
40 導電層
42 誘電層
44 抵抗層
46 導電電極
50 第1の部分
52 コネクタ
54 第2の部分
Claims (7)
- 半導体を通るキャリアの流れを制御する制御電極をそれぞれ有する複数のトランジスタセルと、
入力ノードと、
前記入力ノードと、前記複数のトランジスタセルの前記制御電極の対応する1つとの間にそれぞれ結合されている複数のフィルタと、
を備えたトランジスタデバイスであって、
前記半導体が、前記複数のトランジスタセルの共通活性領域を提供し、
前記フィルタは、それぞれ抵抗とコンデンサとを含み、該抵抗とコンデンサは、前記入力ノードと、前記制御電極の対応する1つとの間に並列接続される、
トランジスタデバイス。 - 対になった前記制御電極は共通領域に接続され、前記フィルタは、それぞれ、前記入力ノードと、前記共通領域のうちの対応する1つとの間に結合されている、請求項1記載のトランジスタデバイス。
- 半導体と、
前記半導体の活性領域に形成される複数のトランジスタセルであって、それぞれが、1対の領域の間に配置され、前記活性領域を横切って延びて、前記1対の領域の間で前記活性領域を通るキャリアの流れを制御する制御電極を有する複数のトランジスタセルと、
入力ノードと、
前記入力ノードと、前記複数のトランジスタセルの前記制御電極の対応する1つとの間にそれぞれ結合されている複数のフィルタであって、該フィルタのそれぞれは、
導電層と、
該導電層上に配置された絶縁体と、
該絶縁体の上に配置された抵抗層と、
前記抵抗層の第1の部分に電気的に接触するように配置され前記入力ノードを提供する、導電電極と、
前記抵抗層の前記第1の部分から転置された前記抵抗層の第2の部分と電気的に接触するコネクタであって、前記絶縁層を通り前記導電層と電気的に接触するコネクタと、
を含む複数のフィルタと、
を備える、トランジスタデバイス。 - 対になった前記制御電極は共通領域に接続され、前記フィルタは、それぞれ、前記入力ノードと、前記共通領域のうちの対応する1つとの間に結合されている、請求項3記載のトランジスタデバイス。
- 前記フィルタは、それぞれ抵抗とコンデンサとを含み、前記抵抗とコンデンサは、前記入力ノードと、前記制御電極のうちの対応する1つとの間に並列接続されている、請求項3記載のトランジスタデバイス。
- 前記フィルタは、それぞれ、
前記抵抗層によって提供される抵抗と、
前記導電層および前記導電電極および前記絶縁体によって提供されるコンデンサであって、前記抵抗と前記コンデンサが、前記入力ノードと、前記制御電極のうちの対応する1つとの間に並列接続されている、コンデンサと、
を備える、請求項3記載のトランジスタデバイス。 - 前記フィルタは、それぞれ抵抗とコンデンサとを含み、前記抵抗とコンデンサは、前記入力ノードと、前記共通領域のうちの対応する1つとの間に並列接続されている、請求項4記載のトランジスタデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/329,676 US6232840B1 (en) | 1999-06-10 | 1999-06-10 | Transistor amplifier having reduced parasitic oscillations |
US09/329,676 | 1999-06-10 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001504069A Division JP5198700B2 (ja) | 1999-06-10 | 2000-06-09 | 寄生振動を低減したトランジスタ増幅器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012075178A JP2012075178A (ja) | 2012-04-12 |
JP5296181B2 true JP5296181B2 (ja) | 2013-09-25 |
Family
ID=23286515
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001504069A Expired - Lifetime JP5198700B2 (ja) | 1999-06-10 | 2000-06-09 | 寄生振動を低減したトランジスタ増幅器 |
JP2011266764A Expired - Lifetime JP5296181B2 (ja) | 1999-06-10 | 2011-12-06 | 寄生振動を低減したトランジスタ増幅器 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001504069A Expired - Lifetime JP5198700B2 (ja) | 1999-06-10 | 2000-06-09 | 寄生振動を低減したトランジスタ増幅器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6232840B1 (ja) |
EP (1) | EP1201028B1 (ja) |
JP (2) | JP5198700B2 (ja) |
KR (1) | KR100634645B1 (ja) |
CA (1) | CA2376767C (ja) |
DE (1) | DE60029227T2 (ja) |
WO (1) | WO2000077923A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6775525B1 (en) * | 1999-10-29 | 2004-08-10 | Renesas Technology Corporation | Radio communication apparatus and semiconductor device |
JP2003174335A (ja) * | 2001-12-05 | 2003-06-20 | Mitsubishi Electric Corp | 増幅器 |
US7026876B1 (en) * | 2003-02-21 | 2006-04-11 | Dynalinear Technologies, Inc. | High linearity smart HBT power amplifiers for CDMA/WCDMA application |
US6822522B1 (en) * | 2003-05-23 | 2004-11-23 | The United States Of America As Represented By The Secretary Of The Navy | Method and apparatus for an improved nonlinear oscillator |
JP4155326B2 (ja) * | 2004-11-29 | 2008-09-24 | 株式会社村田製作所 | 半導体装置および電力増幅器 |
DE112005002800B4 (de) * | 2004-11-29 | 2012-06-06 | Murata Manufacturing Co., Ltd. | Hochfrequenzschaltung und Leistungsverstärker mit derselben |
WO2006057077A1 (ja) * | 2004-11-29 | 2006-06-01 | Murata Manufacturing Co., Ltd. | 半導体装置および電力増幅器 |
JP2007143069A (ja) * | 2005-11-22 | 2007-06-07 | Mitsubishi Electric Corp | 電力増幅器 |
US7477108B2 (en) * | 2006-07-14 | 2009-01-13 | Micro Mobio, Inc. | Thermally distributed integrated power amplifier module |
JP2009111632A (ja) * | 2007-10-29 | 2009-05-21 | Toshiba Corp | 周波数変換器及びこれを用いた受信機及び送信機 |
JP5238633B2 (ja) * | 2009-07-27 | 2013-07-17 | 株式会社東芝 | 半導体装置 |
JP5633367B2 (ja) * | 2010-12-28 | 2014-12-03 | 富士通株式会社 | 増幅装置及び増幅方法 |
US20120313213A1 (en) * | 2011-06-07 | 2012-12-13 | Raytheon Company | Polygon shaped power amplifier chips |
JP5487187B2 (ja) * | 2011-11-16 | 2014-05-07 | 株式会社東芝 | 高周波増幅器 |
JP6160689B2 (ja) * | 2013-03-26 | 2017-07-12 | 日本電気株式会社 | 電力増幅器 |
JP6015615B2 (ja) * | 2013-10-01 | 2016-10-26 | 三菱電機株式会社 | 半導体装置 |
US9300246B2 (en) | 2014-02-25 | 2016-03-29 | International Business Machines Corporation | Resonator having distributed transconductance elements |
WO2018109926A1 (ja) * | 2016-12-16 | 2018-06-21 | 三菱電機株式会社 | 半導体装置 |
US10432200B1 (en) * | 2018-11-15 | 2019-10-01 | Win Semiconductors Corp. | Gallium arsenide cell and logic circuit |
JP7438021B2 (ja) * | 2020-05-19 | 2024-02-26 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (17)
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US3662274A (en) * | 1970-06-08 | 1972-05-09 | Ametek Inc | Dual-channel logarithmic amplifier |
US4901032A (en) * | 1988-12-01 | 1990-02-13 | General Electric Company | Digitally controlled variable power amplifier |
JP2854327B2 (ja) * | 1989-06-26 | 1999-02-03 | キヤノン株式会社 | 電子写真用キャリアおよび二成分系現像剤 |
JPH07120906B2 (ja) * | 1989-10-05 | 1995-12-20 | 日本電気株式会社 | マイクロ波ミリ波高出力トランジスタ |
JPH04171974A (ja) * | 1990-11-06 | 1992-06-19 | Nec Ic Microcomput Syst Ltd | 増幅回路 |
US5126704A (en) * | 1991-04-11 | 1992-06-30 | Harris Corporation | Polyphase divider/combiner |
US5111157A (en) * | 1991-05-01 | 1992-05-05 | General Electric Company | Power amplifier for broad band operation at frequencies above one ghz and at decade watt power levels |
DE4213357C1 (en) * | 1992-04-23 | 1993-09-16 | Rohde & Schwarz Gmbh & Co Kg, 81671 Muenchen, De | Wideband power amplifier using parallel transistors - has input circuit between successive input line sections and respective transistors for distributing input load |
JPH0774557A (ja) * | 1993-09-03 | 1995-03-17 | Toshiba Corp | マイクロ波半導体装置 |
US5477188A (en) * | 1994-07-14 | 1995-12-19 | Eni | Linear RF power amplifier |
JPH08130419A (ja) * | 1994-11-01 | 1996-05-21 | Fujitsu Ltd | 増幅器並びにこれを有する受信機及び通信機 |
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JPH1083998A (ja) * | 1996-09-09 | 1998-03-31 | Mitsubishi Electric Corp | 半導体装置 |
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GB9901634D0 (en) * | 1999-01-27 | 1999-07-14 | Secr Defence | Microwave amplifiers |
-
1999
- 1999-06-10 US US09/329,676 patent/US6232840B1/en not_active Expired - Lifetime
-
2000
- 2000-06-09 EP EP00939833A patent/EP1201028B1/en not_active Expired - Lifetime
- 2000-06-09 WO PCT/US2000/016208 patent/WO2000077923A1/en active IP Right Grant
- 2000-06-09 KR KR1020017015887A patent/KR100634645B1/ko active IP Right Grant
- 2000-06-09 DE DE60029227T patent/DE60029227T2/de not_active Expired - Lifetime
- 2000-06-09 CA CA2376767A patent/CA2376767C/en not_active Expired - Lifetime
- 2000-06-09 JP JP2001504069A patent/JP5198700B2/ja not_active Expired - Lifetime
-
2011
- 2011-12-06 JP JP2011266764A patent/JP5296181B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA2376767C (en) | 2011-08-02 |
DE60029227T2 (de) | 2007-06-28 |
EP1201028A1 (en) | 2002-05-02 |
EP1201028B1 (en) | 2006-07-05 |
CA2376767A1 (en) | 2000-12-21 |
JP2012075178A (ja) | 2012-04-12 |
JP5198700B2 (ja) | 2013-05-15 |
DE60029227D1 (de) | 2006-08-17 |
KR100634645B1 (ko) | 2006-10-16 |
US6232840B1 (en) | 2001-05-15 |
JP2003502896A (ja) | 2003-01-21 |
EP1201028A4 (en) | 2004-03-10 |
WO2000077923A1 (en) | 2000-12-21 |
KR20020064144A (ko) | 2002-08-07 |
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