JP5275554B2 - Iii−v族半導体単結晶の製造方法 - Google Patents
Iii−v族半導体単結晶の製造方法 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims description 193
- 239000004065 semiconductor Substances 0.000 title claims description 140
- 238000004519 manufacturing process Methods 0.000 title claims description 69
- 239000002019 doping agent Substances 0.000 claims description 101
- 238000000034 method Methods 0.000 claims description 78
- 230000008569 process Effects 0.000 claims description 47
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 31
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical group O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052810 boron oxide Inorganic materials 0.000 claims description 29
- 238000007711 solidification Methods 0.000 claims description 27
- 230000008023 solidification Effects 0.000 claims description 27
- 229910052796 boron Inorganic materials 0.000 claims description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 22
- 239000000565 sealant Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 13
- 239000007788 liquid Substances 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 10
- 230000012010 growth Effects 0.000 description 29
- 235000012431 wafers Nutrition 0.000 description 25
- 239000000155 melt Substances 0.000 description 24
- 150000001875 compounds Chemical class 0.000 description 16
- 230000007547 defect Effects 0.000 description 15
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- 230000007704 transition Effects 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007655 standard test method Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- DBKNIEBLJMAJHX-UHFFFAOYSA-N [As]#B Chemical compound [As]#B DBKNIEBLJMAJHX-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
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- 239000007858 starting material Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- -1 HgZnTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000000559 atomic spectroscopy Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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- 238000007710 freezing Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
従来、半導体材料の溶融体の垂直方向に向けられる凝固に基づいて、より大きな径、特に少なくとも100mmの径が所望されるIII-V族半導体結晶が製造される場合、たとえば、酸化硼素の封止剤を使用する必要があった。しかしながら、これにより上述の問題が生じる。
造方法。
試料形態:ウェハの中央部から切り取った正方形プレート
横方向寸法:17mm×17mm、厚さ625μm(ウェハの厚さに相当する)
測定中の試料温度:(22±0.2)℃
磁界の磁束密度:0.47T
試料電流:100mA
2 円筒形部
3 部分
4 円筒形部
5 種結晶
6 容器
7 ドーパント
8 器具
9 半導体溶融体
10 封止剤
11 半導体単結晶
12 凝固最前部
Claims (10)
- ドーパントがドーピングされる半導体単結晶を、製造される半導体単結晶と同一の半導体材料の種結晶を使用し、坩堝内で半導体溶融体を凝固させて製造する製造方法において、
円錐部又は先細部を有する坩堝が使用されてVGF法あるいはVB法が実施され、
製造される半導体単結晶における所望の導電率を調整するために使用される前記ドーパントは、
(a)種結晶上に形成される前記半導体単結晶の成長が開始した後、又は
(b)坩堝の円錐部又は先細部とにおいて半導体単結晶の凝固が終了した後に、前記半導体溶融体に添加され、
前記ドーパントの添加が少なくとも2ステップで実施され、
第1のステップでは、事前に、すなわち(a)もしくは(b)に先立って、前記ドーパントの一部が添加され、
第2のステップでは、(a)もしくは(b)に従って、前記ドーパントの残りが前記半導体溶融体に添加され、
少なくとも前記2つのステップでドーパントが添加されるときに、前記第1のステップにおいて添加されるドーパントの量が、製造される半導体単結晶における所望の導電率を調整するために使用されるドーパント総量の2/3以下である
ことを特徴とするドープ半導体単結晶の製造方法。 - 製造される前記半導体単結晶の円錐部全体におけるドーパント濃度が最大で1×1018atoms/cm3であり、
及び/又は、製造される前記半導体単結晶の円筒部全体におけるドーパント濃度が、6×1017atoms/cm3以上であることを特徴とする請求項1に記載の製造方法。 - 前記半導体溶融体が液体封止剤に覆われていることを特徴とする請求項1に記載の製造方法。
- 前記液体封止剤は酸化硼素であり、該酸化硼素から生じる不純物は硼素であることを特徴とする請求項3に記載の製造方法。
- 製造される前記半導体単結晶が、III-V族半導体の単結晶であることを特徴とする請求項1に記載の製造方法。
- 製造される前記単結晶が、主成分としてガリウム砒素を含むことを特徴とする請求項5に記載の製造方法。
- 製造される前記半導体単結晶、または前記半導体単結晶から加工される基板ウェハが、少なくとも250S/cmの導電率を有するn型あるいはp型であることを特徴とする請求項1に記載の製造方法。
- 製造される前記半導体単結晶、または前記半導体単結晶から加工される前記基板ウェハが、最大で4×10-3Ωcmの抵抗率を有することを特徴とする請求項7に記載の製造方法。
- 前記ドーパントが固体状態で添加されることを特徴とする請求項1に記載の製造方法。
- シリコンがドーパントとして使用されることを特徴とする請求項1に記載の製造方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102005030853.8 | 2005-07-01 | ||
DE200510030853 DE102005030853A1 (de) | 2005-07-01 | 2005-07-01 | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall |
US69786005P | 2005-07-08 | 2005-07-08 | |
US60/697,860 | 2005-07-08 |
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JP2013022575A Division JP2013126943A (ja) | 2005-07-01 | 2013-02-07 | ドープ半導体単結晶 |
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JP2007051054A JP2007051054A (ja) | 2007-03-01 |
JP5275554B2 true JP5275554B2 (ja) | 2013-08-28 |
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JP2006182311A Active JP5275554B2 (ja) | 2005-07-01 | 2006-06-30 | Iii−v族半導体単結晶の製造方法 |
JP2013022575A Pending JP2013126943A (ja) | 2005-07-01 | 2013-02-07 | ドープ半導体単結晶 |
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US (2) | US7410540B2 (ja) |
EP (1) | EP1739210B1 (ja) |
JP (2) | JP5275554B2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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EP1739210B1 (de) * | 2005-07-01 | 2012-03-07 | Freiberger Compound Materials GmbH | Verfahren zur Herstellung von dotierten Halbleiter-Einkristallen, und III-V-Halbleiter-Einkristall |
KR20080086905A (ko) * | 2006-01-20 | 2008-09-26 | 마쯔시다덴기산교 가부시키가이샤 | 반도체 발광 소자, ⅲ족 질화물 반도체 기판, 및 그 제조방법 |
TW200938664A (en) * | 2007-12-19 | 2009-09-16 | Schott Ag | Method for producing a monocrystalline or polycrystalline semiconductor material |
US8329295B2 (en) * | 2008-07-11 | 2012-12-11 | Freiberger Compound Materials Gmbh | Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient |
FR2940806B1 (fr) * | 2009-01-05 | 2011-04-08 | Commissariat Energie Atomique | Procede de solidification de semi-conducteur avec ajout de charges de semi-conducteur dope au cours de la cristallisation |
US9187843B2 (en) | 2009-07-23 | 2015-11-17 | Sumitomo Electric Industries, Ltd. | Method and apparatus for producing semiconductor crystal, and semiconductor crystal |
CN102220627B (zh) * | 2011-05-23 | 2012-12-05 | 西安西光机械制造有限公司 | 单电机宽调速范围的坩埚杆运行调速系统及调速方法 |
US20130044779A1 (en) | 2011-08-16 | 2013-02-21 | Raytheon Company | Method for tailoring the dopant profile in a laser crystal using zone processing |
DE102011117411A1 (de) * | 2011-11-02 | 2013-05-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Analyse des Erstarrungsverhaltens einer Siliziumsäule |
US9691617B2 (en) * | 2012-03-26 | 2017-06-27 | Beijing Tongmei Xtal Technology Co., Ltd. | IIIA-VA group semiconductor single crystal substrate and method for preparing same |
US9945048B2 (en) * | 2012-06-15 | 2018-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method |
JP5981356B2 (ja) * | 2013-01-22 | 2016-08-31 | Jx金属株式会社 | 化合物半導体単結晶、化合物半導体ウエハ、および化合物半導体単結晶の製造方法 |
US9954128B2 (en) | 2016-01-12 | 2018-04-24 | The Boeing Company | Structures for increased current generation and collection in solar cells with low absorptance and/or low diffusion length |
US10541345B2 (en) * | 2016-01-12 | 2020-01-21 | The Boeing Company | Structures for increased current generation and collection in solar cells with low absorptance and/or low diffusion length |
WO2019008663A1 (ja) * | 2017-07-04 | 2019-01-10 | 住友電気工業株式会社 | ヒ化ガリウム結晶体およびヒ化ガリウム結晶基板 |
CN110760932B (zh) * | 2019-11-22 | 2021-02-23 | 中国电子科技集团公司第十三研究所 | 一种利用铟磷混合物制备磷化铟晶体的方法 |
JP7138682B2 (ja) * | 2020-10-05 | 2022-09-16 | Dowaエレクトロニクス株式会社 | GaAsウエハ及びGaAsインゴットの製造方法 |
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US20080203362A1 (en) | 2008-08-28 |
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