JP5273764B2 - エピタキシャルシリコンウェーハ及びその製造方法 - Google Patents
エピタキシャルシリコンウェーハ及びその製造方法 Download PDFInfo
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- JP5273764B2 JP5273764B2 JP2007103020A JP2007103020A JP5273764B2 JP 5273764 B2 JP5273764 B2 JP 5273764B2 JP 2007103020 A JP2007103020 A JP 2007103020A JP 2007103020 A JP2007103020 A JP 2007103020A JP 5273764 B2 JP5273764 B2 JP 5273764B2
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- wafer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 41
- 229910052710 silicon Inorganic materials 0.000 title claims description 41
- 239000010703 silicon Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title description 12
- 235000012431 wafers Nutrition 0.000 description 84
- 238000000034 method Methods 0.000 description 34
- 239000007789 gas Substances 0.000 description 21
- 239000012535 impurity Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
Description
12,24 高濃度エピタキシャル層
14,28 低濃度エピタキシャル層
22,26 中間層
Claims (3)
- 第1ドーピング濃度を有するバルクウェーハと、
前記バルクウェーハ上に形成される第1中間層と、
前記第1中間層上に前記第1ドーピング濃度より高い第2ドーピング濃度を有する第1エピタキシャル層と、
前記第1エピタキシャル層上に形成される第2中間層と、
前記第2中間層上に前記第2ドーピング濃度より低い第3ドーピング濃度を有する第2エピタキシャル層と、
を備え、
前記バルクウェーハの比抵抗が10〜50Ω・cmの範囲であることを特徴とするエピタキシャルシリコンウェーハ。 - 前記第2中間層は、前記第1エピタキシャル層及び前記第2エピタキシャル層と異なる濃度を有するように形成されたことを特徴とする請求項1に記載のエピタキシャルシリコンウェーハ。
- 前記第1中間層及び前記第2中間層が、前記バルクウェーハより高い濃度で形成されたことを特徴とする請求項1に記載のエピタキシャルシリコンウェーハ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2006-0058126 | 2006-06-27 | ||
KR1020060058126A KR100793607B1 (ko) | 2006-06-27 | 2006-06-27 | 에피텍셜 실리콘 웨이퍼 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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JP2008010827A JP2008010827A (ja) | 2008-01-17 |
JP5273764B2 true JP5273764B2 (ja) | 2013-08-28 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007103020A Active JP5273764B2 (ja) | 2006-06-27 | 2007-04-10 | エピタキシャルシリコンウェーハ及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9496135B2 (ja) |
JP (1) | JP5273764B2 (ja) |
KR (1) | KR100793607B1 (ja) |
Families Citing this family (11)
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KR100901343B1 (ko) * | 2007-07-23 | 2009-06-05 | (주)실리콘화일 | 결정질 반도체 박막 제조 방법 |
JP2009176784A (ja) * | 2008-01-22 | 2009-08-06 | Covalent Materials Tokuyama Corp | 薄膜エピタキシャルウェーハの製造方法 |
WO2010021623A1 (en) * | 2008-08-21 | 2010-02-25 | Midwest Research Institute | Epitaxial growth of silicon for layer transfer |
KR101184380B1 (ko) * | 2008-08-28 | 2012-09-20 | 매그나칩 반도체 유한회사 | 에피택셜 웨이퍼 제조 방법, 이를 적용한 에피택셜 웨이퍼,및 반도체 소자 |
CN102326229B (zh) * | 2009-03-05 | 2014-03-12 | 应用材料公司 | 沉积具有低界面污染的层的方法 |
US8173535B2 (en) * | 2009-12-21 | 2012-05-08 | Omnivision Technologies, Inc. | Wafer structure to reduce dark current |
TW201417150A (zh) * | 2012-10-31 | 2014-05-01 | Lg Innotek Co Ltd | 磊晶晶圓 |
JP5877500B2 (ja) * | 2013-01-22 | 2016-03-08 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法 |
JP6477210B2 (ja) * | 2015-04-30 | 2019-03-06 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
US11295949B2 (en) * | 2019-04-01 | 2022-04-05 | Vishay SIliconix, LLC | Virtual wafer techniques for fabricating semiconductor devices |
CN113322513A (zh) * | 2021-08-03 | 2021-08-31 | 南京国盛电子有限公司 | 一种生长薄层高阻硅外延片的方法及所制得的外延片 |
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BE759342A (fr) * | 1969-11-24 | 1971-05-24 | Westinghouse Electric Corp | Appareil et methode pour la determination automatique de la resistance d'etalement, la resistivite et la concentration d'impuretes dans des corps semi-conducteurs |
US3847686A (en) * | 1970-05-27 | 1974-11-12 | Gen Electric | Method of forming silicon epitaxial layers |
US4875086A (en) * | 1987-05-22 | 1989-10-17 | Texas Instruments Incorporated | Silicon-on-insulator integrated circuits and method |
US4799991A (en) * | 1987-11-02 | 1989-01-24 | Motorola, Inc. | Process for preferentially etching polycrystalline silicon |
US4927781A (en) * | 1989-03-20 | 1990-05-22 | Miller Robert O | Method of making a silicon integrated circuit waveguide |
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JPH05291134A (ja) * | 1992-04-13 | 1993-11-05 | Sony Corp | エピタキシャル層の形成方法 |
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2006
- 2006-06-27 KR KR1020060058126A patent/KR100793607B1/ko active IP Right Grant
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- 2007-04-04 US US11/730,885 patent/US9496135B2/en active Active
- 2007-04-10 JP JP2007103020A patent/JP5273764B2/ja active Active
Also Published As
Publication number | Publication date |
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US20070298591A1 (en) | 2007-12-27 |
JP2008010827A (ja) | 2008-01-17 |
US9496135B2 (en) | 2016-11-15 |
KR100793607B1 (ko) | 2008-01-10 |
KR20080000368A (ko) | 2008-01-02 |
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