JP5254569B2 - 半導体装置および半導体装置のヒューズ溶断方法 - Google Patents
半導体装置および半導体装置のヒューズ溶断方法 Download PDFInfo
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- JP5254569B2 JP5254569B2 JP2007135876A JP2007135876A JP5254569B2 JP 5254569 B2 JP5254569 B2 JP 5254569B2 JP 2007135876 A JP2007135876 A JP 2007135876A JP 2007135876 A JP2007135876 A JP 2007135876A JP 5254569 B2 JP5254569 B2 JP 5254569B2
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- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 31
- 239000000872 buffer Substances 0.000 claims description 16
- 238000007664 blowing Methods 0.000 claims description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Description
1 コア回路形成領域
2 バッファ形成領域
3 パッド形成領域
4 ヒューズマクロ
5 ヒューズ
6 パッド列
7 ヒューズ用パッド
10 活性領域
21 ヒューズ断線用配線
100 半導体チップ
Claims (5)
- コア回路形成領域およびバッファ形成領域を含む活性領域と、
前記活性領域の角部に配置された電気的に溶断可能なヒューズ素子形成領域と、
前記ヒューズ素子形成領域のヒューズに接続され、前記角部の上層における複数の配線層に形成されたヒューズ溶断用配線を有する
半導体装置。 - 前記半導体装置は、さらに、
前記バッファ形成領域の周辺に配置されたパッド形成領域を有し、
前記活性領域の角部近傍に形成されたパッドが前記ヒューズ素子形成領域に形成されたヒューズに電気的に接続されていることを特徴とする請求項1記載の半導体装置。 - 前記ヒューズに電気的に接続されるパッドのうち、少なくとも1つのパッドが外部端子に電気的に接続されることを特徴とする請求項2記載の半導体装置。
- 前記半導体装置は、さらに、
前記バッファ形成領域の周辺に配置されたパッド形成領域を有し、
前記パッド形成領域には、同一のヒューズに対して電圧を印加可能な3以上のパッドが設けられている、
請求項1記載の半導体装置。 - 半導体装置における、コア回路形成領域およびバッファ形成領域を含む活性領域の角部にヒューズ素子形成領域を配置し、
前記活性領域の角部近傍に形成された複数のパッドと、前記ヒューズ素子形成領域のヒューズとを、前記角部の上層における複数の配線層に形成されたヒューズ溶断用配線によって電気的に接続し、
前記複数のパッドにプロービングによって電圧を与えることにより、前記ヒューズを溶断する半導体装置のヒューズ溶断方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007135876A JP5254569B2 (ja) | 2007-05-22 | 2007-05-22 | 半導体装置および半導体装置のヒューズ溶断方法 |
US12/125,324 US8080860B2 (en) | 2007-05-22 | 2008-05-22 | Semiconductor device and method of blowing fuse thereof |
US13/296,443 US8455976B2 (en) | 2007-05-22 | 2011-11-15 | Semiconductor device and method of blowing fuse thereof |
US13/875,609 US9029981B2 (en) | 2007-05-22 | 2013-05-02 | Semiconductor device having a fuse |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007135876A JP5254569B2 (ja) | 2007-05-22 | 2007-05-22 | 半導体装置および半導体装置のヒューズ溶断方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013087090A Division JP5592970B2 (ja) | 2013-04-18 | 2013-04-18 | 半導体装置および半導体装置のヒューズ溶断方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008294089A JP2008294089A (ja) | 2008-12-04 |
JP5254569B2 true JP5254569B2 (ja) | 2013-08-07 |
Family
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Family Applications (1)
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JP2007135876A Active JP5254569B2 (ja) | 2007-05-22 | 2007-05-22 | 半導体装置および半導体装置のヒューズ溶断方法 |
Country Status (2)
Country | Link |
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US (3) | US8080860B2 (ja) |
JP (1) | JP5254569B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7208776B2 (en) * | 2004-01-30 | 2007-04-24 | Broadcom Corporation | Fuse corner pad for an integrated circuit |
JP5254569B2 (ja) * | 2007-05-22 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置のヒューズ溶断方法 |
US9527723B2 (en) | 2014-03-13 | 2016-12-27 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming microelectromechanical systems (MEMS) package |
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US3435826A (en) * | 1964-05-27 | 1969-04-01 | Edwards Lab Inc | Embolectomy catheter |
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US4706671A (en) * | 1985-05-02 | 1987-11-17 | Weinrib Harry P | Catheter with coiled tip |
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-
2007
- 2007-05-22 JP JP2007135876A patent/JP5254569B2/ja active Active
-
2008
- 2008-05-22 US US12/125,324 patent/US8080860B2/en active Active
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2011
- 2011-11-15 US US13/296,443 patent/US8455976B2/en not_active Expired - Fee Related
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2013
- 2013-05-02 US US13/875,609 patent/US9029981B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9029981B2 (en) | 2015-05-12 |
US20120056296A1 (en) | 2012-03-08 |
US20130235643A1 (en) | 2013-09-12 |
US8080860B2 (en) | 2011-12-20 |
US20080290455A1 (en) | 2008-11-27 |
US8455976B2 (en) | 2013-06-04 |
JP2008294089A (ja) | 2008-12-04 |
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