JP5229271B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5229271B2
JP5229271B2 JP2010115526A JP2010115526A JP5229271B2 JP 5229271 B2 JP5229271 B2 JP 5229271B2 JP 2010115526 A JP2010115526 A JP 2010115526A JP 2010115526 A JP2010115526 A JP 2010115526A JP 5229271 B2 JP5229271 B2 JP 5229271B2
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JP
Japan
Prior art keywords
lid
case
semiconductor device
protrusion
base plate
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Active
Application number
JP2010115526A
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English (en)
Japanese (ja)
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JP2011243798A (ja
JP2011243798A5 (enExample
Inventor
哲生 黒田
学 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2010115526A priority Critical patent/JP5229271B2/ja
Priority to DE102011007228.4A priority patent/DE102011007228B4/de
Priority to CN201110104259.7A priority patent/CN102254878B/zh
Publication of JP2011243798A publication Critical patent/JP2011243798A/ja
Publication of JP2011243798A5 publication Critical patent/JP2011243798A5/ja
Application granted granted Critical
Publication of JP5229271B2 publication Critical patent/JP5229271B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2010115526A 2010-05-19 2010-05-19 半導体装置 Active JP5229271B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010115526A JP5229271B2 (ja) 2010-05-19 2010-05-19 半導体装置
DE102011007228.4A DE102011007228B4 (de) 2010-05-19 2011-04-12 Halbleitervorrichtung
CN201110104259.7A CN102254878B (zh) 2010-05-19 2011-04-15 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010115526A JP5229271B2 (ja) 2010-05-19 2010-05-19 半導体装置

Publications (3)

Publication Number Publication Date
JP2011243798A JP2011243798A (ja) 2011-12-01
JP2011243798A5 JP2011243798A5 (enExample) 2012-07-19
JP5229271B2 true JP5229271B2 (ja) 2013-07-03

Family

ID=44900590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010115526A Active JP5229271B2 (ja) 2010-05-19 2010-05-19 半導体装置

Country Status (3)

Country Link
JP (1) JP5229271B2 (enExample)
CN (1) CN102254878B (enExample)
DE (1) DE102011007228B4 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524370B2 (en) 2005-12-23 2013-09-03 3M Innovative Properties Company Multilayer films including thermoplastic silicone block copolymers

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6848802B2 (ja) 2017-10-11 2021-03-24 三菱電機株式会社 半導体装置
JP6861622B2 (ja) * 2017-12-19 2021-04-21 三菱電機株式会社 半導体装置及び電力変換装置
EP4270469A1 (en) * 2022-04-29 2023-11-01 Infineon Technologies AG Power semiconductor module

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4079511A (en) * 1976-07-30 1978-03-21 Amp Incorporated Method for packaging hermetically sealed integrated circuit chips on lead frames
DE3308720A1 (de) 1983-03-11 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit scheibenfoermigem gehaeuse
JPS6329957A (ja) * 1986-07-23 1988-02-08 Seiko Epson Corp 半導体装置の封止形態
JPS63164345A (ja) 1986-12-26 1988-07-07 Nec Corp 半導体集積回路用パツケ−ジ
JPH02307250A (ja) * 1989-05-23 1990-12-20 Mitsubishi Electric Corp 混成集積回路パツケージ
JP3357220B2 (ja) 1995-07-07 2002-12-16 三菱電機株式会社 半導体装置
EP1355351B1 (en) 2001-01-23 2018-05-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
JP2004103936A (ja) 2002-09-11 2004-04-02 Mitsubishi Electric Corp 電力半導体装置およびその製造方法
EP1494278A1 (de) 2003-07-04 2005-01-05 Siemens Aktiengesellschaft Elektronisches Leistungsmodul mit Gummidichtung und entsprechendes Herstellungsverfahren
CN100361317C (zh) * 2004-02-27 2008-01-09 矽品精密工业股份有限公司 具有支撑体的感光半导体封装件及其制法
ES2367036T3 (es) 2005-09-27 2011-10-27 SEMIKRON ELEKTRONIK GMBH & CO. KG PATENTABTEILUNG Módulo de semiconductor de potencia con medios de protección contra la sobre corriente.
JP4242401B2 (ja) * 2006-06-29 2009-03-25 三菱電機株式会社 半導体装置
CN101101880A (zh) * 2006-07-03 2008-01-09 矽品精密工业股份有限公司 散热型封装结构及其制法
JP4858336B2 (ja) * 2007-07-10 2012-01-18 三菱電機株式会社 電力用半導体装置
DE102008051560A1 (de) 2007-10-18 2009-04-23 Infineon Technologies Ag Leistungshalbleitermodul

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524370B2 (en) 2005-12-23 2013-09-03 3M Innovative Properties Company Multilayer films including thermoplastic silicone block copolymers

Also Published As

Publication number Publication date
DE102011007228B4 (de) 2019-08-22
JP2011243798A (ja) 2011-12-01
CN102254878B (zh) 2015-01-14
DE102011007228A1 (de) 2011-11-24
CN102254878A (zh) 2011-11-23

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