JP5224659B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP5224659B2
JP5224659B2 JP2006193014A JP2006193014A JP5224659B2 JP 5224659 B2 JP5224659 B2 JP 5224659B2 JP 2006193014 A JP2006193014 A JP 2006193014A JP 2006193014 A JP2006193014 A JP 2006193014A JP 5224659 B2 JP5224659 B2 JP 5224659B2
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JP
Japan
Prior art keywords
potential
mos transistor
word line
signal
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006193014A
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English (en)
Japanese (ja)
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JP2008022349A (ja
Inventor
昌樹 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2006193014A priority Critical patent/JP5224659B2/ja
Priority to US11/826,109 priority patent/US7599232B2/en
Priority to CNA2007101287367A priority patent/CN101110263A/zh
Publication of JP2008022349A publication Critical patent/JP2008022349A/ja
Application granted granted Critical
Publication of JP5224659B2 publication Critical patent/JP5224659B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4067—Refresh in standby or low power modes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4068—Voltage or leakage in refresh operations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
JP2006193014A 2006-07-13 2006-07-13 半導体記憶装置 Expired - Fee Related JP5224659B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006193014A JP5224659B2 (ja) 2006-07-13 2006-07-13 半導体記憶装置
US11/826,109 US7599232B2 (en) 2006-07-13 2007-07-12 Semiconductor memory device
CNA2007101287367A CN101110263A (zh) 2006-07-13 2007-07-12 半导体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006193014A JP5224659B2 (ja) 2006-07-13 2006-07-13 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2008022349A JP2008022349A (ja) 2008-01-31
JP5224659B2 true JP5224659B2 (ja) 2013-07-03

Family

ID=39042282

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006193014A Expired - Fee Related JP5224659B2 (ja) 2006-07-13 2006-07-13 半導体記憶装置

Country Status (3)

Country Link
US (1) US7599232B2 (zh)
JP (1) JP5224659B2 (zh)
CN (1) CN101110263A (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007207380A (ja) * 2006-02-03 2007-08-16 Renesas Technology Corp 不揮発性半導体記憶装置
US8943425B2 (en) * 2007-10-30 2015-01-27 Google Technology Holdings LLC Method and apparatus for context-aware delivery of informational content on ambient displays
JP5168471B2 (ja) * 2008-02-05 2013-03-21 ルネサスエレクトロニクス株式会社 半導体装置
KR100967102B1 (ko) * 2008-06-30 2010-07-01 주식회사 하이닉스반도체 반도체 메모리 장치
KR101250984B1 (ko) * 2008-07-11 2013-04-03 삼성전자주식회사 구동 트랜지스터들을 포함하는 반도체 소자
US7876612B2 (en) * 2008-10-08 2011-01-25 Nanya Technology Corp. Method for reducing leakage current of a memory and related device
TWI398876B (zh) * 2008-12-25 2013-06-11 Winbond Electronics Corp 記憶體控制器與解碼器
CN101777378B (zh) * 2009-01-09 2014-01-08 华邦电子股份有限公司 存储器控制器与解码器
JP4964907B2 (ja) * 2009-02-12 2012-07-04 ウインボンド エレクトロニクス コーポレイション 記憶体制御器及び復号器
JP5315087B2 (ja) * 2009-02-20 2013-10-16 セイコーインスツル株式会社 昇圧回路
KR101721115B1 (ko) 2010-01-13 2017-03-30 삼성전자 주식회사 서브 워드 라인 드라이버를 포함하는 반도체 소자
JP5837311B2 (ja) * 2011-03-01 2015-12-24 ローム株式会社 ドライバ及び半導体記憶装置
US9007822B2 (en) 2012-09-14 2015-04-14 Micron Technology, Inc. Complementary decoding for non-volatile memory
CN103021447B (zh) * 2012-12-21 2016-06-08 上海华虹宏力半导体制造有限公司 字线偏置电路及存储器
US9064552B2 (en) * 2013-02-27 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Word line driver and related method
US10659045B2 (en) * 2017-06-27 2020-05-19 Silicon Laboratories Inc. Apparatus with electronic circuitry having reduced leakage current and associated methods
CN110211615A (zh) * 2019-06-13 2019-09-06 苏州汇峰微电子有限公司 一种dram列选择驱动电路及其降低漏电的方法
US10854272B1 (en) * 2019-06-24 2020-12-01 Micron Technology, Inc. Apparatuses and methods for controlling word line discharge
KR20220032288A (ko) 2020-09-07 2022-03-15 삼성전자주식회사 비휘발성 메모리 장치
CN115623775A (zh) * 2021-07-13 2023-01-17 长鑫存储技术有限公司 字线驱动器、字线驱动器阵列及半导体结构
US11990175B2 (en) 2022-04-01 2024-05-21 Micron Technology, Inc. Apparatuses and methods for controlling word line discharge

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5513147A (en) * 1994-12-19 1996-04-30 Alliance Semiconductor Corporation Row driving circuit for memory devices
JP3633061B2 (ja) * 1995-10-19 2005-03-30 三菱電機株式会社 半導体集積回路装置
US5808956A (en) * 1995-12-20 1998-09-15 Seiko Epson Corporation Bus-line drive circuit and semiconductor storage device comprising the same
JP4075090B2 (ja) * 1997-01-13 2008-04-16 株式会社日立製作所 半導体装置
JPH11112297A (ja) * 1997-10-06 1999-04-23 Nec Corp ラッチ回路及びこのラッチ回路を有する半導体集積回路
JPH11328955A (ja) * 1998-05-14 1999-11-30 Mitsubishi Electric Corp 半導体回路装置
JP2000306382A (ja) * 1999-02-17 2000-11-02 Hitachi Ltd 半導体集積回路装置
US6084804A (en) * 1999-05-04 2000-07-04 Lucent Technologies Inc. Memory row driver with parasitic diode pull-down function
JP4311561B2 (ja) 2001-06-05 2009-08-12 株式会社ルネサステクノロジ 半導体集積回路装置と半導体装置の製造方法
JP4437710B2 (ja) * 2003-10-30 2010-03-24 富士通マイクロエレクトロニクス株式会社 半導体メモリ
JP4964907B2 (ja) * 2009-02-12 2012-07-04 ウインボンド エレクトロニクス コーポレイション 記憶体制御器及び復号器

Also Published As

Publication number Publication date
US7599232B2 (en) 2009-10-06
US20080049539A1 (en) 2008-02-28
JP2008022349A (ja) 2008-01-31
CN101110263A (zh) 2008-01-23

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