JP5219534B2 - 露光装置及びデバイスの製造方法 - Google Patents

露光装置及びデバイスの製造方法 Download PDF

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Publication number
JP5219534B2
JP5219534B2 JP2008021648A JP2008021648A JP5219534B2 JP 5219534 B2 JP5219534 B2 JP 5219534B2 JP 2008021648 A JP2008021648 A JP 2008021648A JP 2008021648 A JP2008021648 A JP 2008021648A JP 5219534 B2 JP5219534 B2 JP 5219534B2
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JP
Japan
Prior art keywords
pattern
aberration measurement
measurement pattern
aberration
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008021648A
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English (en)
Japanese (ja)
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JP2009182253A (ja
JP2009182253A5 (enExample
Inventor
務 竹中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008021648A priority Critical patent/JP5219534B2/ja
Priority to TW098102049A priority patent/TW200947159A/zh
Priority to US12/358,599 priority patent/US8665416B2/en
Priority to KR1020090007551A priority patent/KR20090084754A/ko
Publication of JP2009182253A publication Critical patent/JP2009182253A/ja
Publication of JP2009182253A5 publication Critical patent/JP2009182253A5/ja
Application granted granted Critical
Publication of JP5219534B2 publication Critical patent/JP5219534B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008021648A 2008-01-31 2008-01-31 露光装置及びデバイスの製造方法 Expired - Fee Related JP5219534B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008021648A JP5219534B2 (ja) 2008-01-31 2008-01-31 露光装置及びデバイスの製造方法
TW098102049A TW200947159A (en) 2008-01-31 2009-01-20 Exposure apparatus and method of manufacturing device
US12/358,599 US8665416B2 (en) 2008-01-31 2009-01-23 Exposure apparatus and method of manufacturing device
KR1020090007551A KR20090084754A (ko) 2008-01-31 2009-01-30 노광 장치 및 디바이스의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008021648A JP5219534B2 (ja) 2008-01-31 2008-01-31 露光装置及びデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2009182253A JP2009182253A (ja) 2009-08-13
JP2009182253A5 JP2009182253A5 (enExample) 2011-02-03
JP5219534B2 true JP5219534B2 (ja) 2013-06-26

Family

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Family Applications (1)

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JP2008021648A Expired - Fee Related JP5219534B2 (ja) 2008-01-31 2008-01-31 露光装置及びデバイスの製造方法

Country Status (4)

Country Link
US (1) US8665416B2 (enExample)
JP (1) JP5219534B2 (enExample)
KR (1) KR20090084754A (enExample)
TW (1) TW200947159A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5457767B2 (ja) * 2009-09-08 2014-04-02 キヤノン株式会社 露光装置およびデバイス製造方法
NL2008310A (en) * 2011-04-05 2012-10-08 Asml Netherlands Bv Lithographic method and assembly.
CN103383531B (zh) * 2012-05-02 2016-07-06 上海微电子装备有限公司 掩模对准装置及使用该装置的光刻设备
CN103424994B (zh) * 2012-05-25 2016-02-03 上海微电子装备有限公司 一种像方标记承载装置及制造该承载装置的方法
JP2017183298A (ja) * 2014-08-20 2017-10-05 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
WO2016169890A1 (en) * 2015-04-20 2016-10-27 Asml Netherlands B.V. Lithographic method and apparatus
JP6762615B2 (ja) * 2017-03-21 2020-09-30 株式会社日立ハイテクサイエンス Ｉｃｐ発光分光分析装置
CN106933025B (zh) * 2017-05-10 2020-04-10 京东方科技集团股份有限公司 掩膜版及其组件、曝光机和检测测试窗口遮挡效果的方法
JP6926948B2 (ja) * 2017-10-27 2021-08-25 セイコーエプソン株式会社 プロジェクター、画像投写システム、及びプロジェクターの制御方法
US11592653B2 (en) 2019-04-05 2023-02-28 Kla Corporation Automated focusing system for tracking specimen surface with a configurable focus offset
EP4109178A1 (en) * 2021-06-22 2022-12-28 ASML Netherlands B.V. Imaging system
KR20250168615A (ko) * 2023-12-26 2025-12-02 하쿠토 가부시키가이샤 투영 노광 장치

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
US4888614A (en) * 1986-05-30 1989-12-19 Canon Kabushiki Kaisha Observation system for a projection exposure apparatus
JP3303436B2 (ja) 1993-05-14 2002-07-22 キヤノン株式会社 投影露光装置及び半導体素子の製造方法
JP3326902B2 (ja) * 1993-09-10 2002-09-24 株式会社日立製作所 パターン検出方法及びパターン検出装置及びそれを用いた投影露光装置
JPH08264427A (ja) * 1995-03-23 1996-10-11 Nikon Corp アライメント方法及びその装置
JP3796369B2 (ja) 1999-03-24 2006-07-12 キヤノン株式会社 干渉計を搭載した投影露光装置
JP3796368B2 (ja) 1999-03-24 2006-07-12 キヤノン株式会社 投影露光装置
JP2001332490A (ja) 2000-03-14 2001-11-30 Nikon Corp 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法
JP2002353099A (ja) * 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び装置及び露光装置及びデバイス製造方法
JP4803901B2 (ja) * 2001-05-22 2011-10-26 キヤノン株式会社 位置合わせ方法、露光装置、および半導体デバイス製造方法
JP2003197510A (ja) * 2001-12-27 2003-07-11 Nikon Corp 収差測定装置、収差測定方法、光学系、および、露光装置
JP2004128149A (ja) * 2002-10-01 2004-04-22 Nikon Corp 収差計測方法、露光方法及び露光装置
JP2004214552A (ja) * 2003-01-08 2004-07-29 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP4023347B2 (ja) * 2003-02-06 2007-12-19 ソニー株式会社 マスク処理装置、マスク処理方法、プログラム、およびマスク
JP4362862B2 (ja) * 2003-04-01 2009-11-11 株式会社ニコン ステージ装置及び露光装置
JP4478424B2 (ja) * 2003-09-29 2010-06-09 キヤノン株式会社 微細加工装置およびデバイスの製造方法
EP1681709A4 (en) * 2003-10-16 2008-09-17 Nikon Corp DEVICE AND METHOD FOR MEASURING OPTICAL CHARACTERISTICS, EXPOSURE SYSTEM AND EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
JP4630611B2 (ja) * 2004-09-01 2011-02-09 キヤノン株式会社 干渉計を備えた露光装置及び方法、並びに、デバイス製造方法
JP4769448B2 (ja) * 2004-10-08 2011-09-07 キヤノン株式会社 干渉計を備えた露光装置及びデバイス製造方法
JP2006196555A (ja) * 2005-01-11 2006-07-27 Nikon Corp 収差計測方法及び装置、並びに露光方法及び装置
JP2006313866A (ja) * 2005-05-09 2006-11-16 Canon Inc 露光装置及び方法
JP2007281003A (ja) * 2006-04-03 2007-10-25 Canon Inc 測定方法及び装置、並びに、露光装置

Also Published As

Publication number Publication date
TW200947159A (en) 2009-11-16
KR20090084754A (ko) 2009-08-05
JP2009182253A (ja) 2009-08-13
US8665416B2 (en) 2014-03-04
US20090195764A1 (en) 2009-08-06

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