TW200947159A - Exposure apparatus and method of manufacturing device - Google Patents
Exposure apparatus and method of manufacturing device Download PDFInfo
- Publication number
- TW200947159A TW200947159A TW098102049A TW98102049A TW200947159A TW 200947159 A TW200947159 A TW 200947159A TW 098102049 A TW098102049 A TW 098102049A TW 98102049 A TW98102049 A TW 98102049A TW 200947159 A TW200947159 A TW 200947159A
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- substrate
- mask
- stage
- original
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000004075 alteration Effects 0.000 claims abstract description 128
- 230000003287 optical effect Effects 0.000 claims abstract description 88
- 238000005259 measurement Methods 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 238000005286 illumination Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 239000000470 constituent Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 210000001747 pupil Anatomy 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008021648A JP5219534B2 (ja) | 2008-01-31 | 2008-01-31 | 露光装置及びデバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200947159A true TW200947159A (en) | 2009-11-16 |
Family
ID=40931331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098102049A TW200947159A (en) | 2008-01-31 | 2009-01-20 | Exposure apparatus and method of manufacturing device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8665416B2 (enExample) |
| JP (1) | JP5219534B2 (enExample) |
| KR (1) | KR20090084754A (enExample) |
| TW (1) | TW200947159A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5457767B2 (ja) * | 2009-09-08 | 2014-04-02 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
| NL2008310A (en) * | 2011-04-05 | 2012-10-08 | Asml Netherlands Bv | Lithographic method and assembly. |
| CN103383531B (zh) * | 2012-05-02 | 2016-07-06 | 上海微电子装备有限公司 | 掩模对准装置及使用该装置的光刻设备 |
| CN103424994B (zh) * | 2012-05-25 | 2016-02-03 | 上海微电子装备有限公司 | 一种像方标记承载装置及制造该承载装置的方法 |
| JP2017183298A (ja) * | 2014-08-20 | 2017-10-05 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| KR102043384B1 (ko) * | 2015-04-20 | 2019-11-27 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 방법 및 장치 |
| JP6762615B2 (ja) * | 2017-03-21 | 2020-09-30 | 株式会社日立ハイテクサイエンス | Ｉｃｐ発光分光分析装置 |
| CN106933025B (zh) * | 2017-05-10 | 2020-04-10 | 京东方科技集团股份有限公司 | 掩膜版及其组件、曝光机和检测测试窗口遮挡效果的方法 |
| JP6926948B2 (ja) * | 2017-10-27 | 2021-08-25 | セイコーエプソン株式会社 | プロジェクター、画像投写システム、及びプロジェクターの制御方法 |
| US11592653B2 (en) | 2019-04-05 | 2023-02-28 | Kla Corporation | Automated focusing system for tracking specimen surface with a configurable focus offset |
| EP4109178A1 (en) * | 2021-06-22 | 2022-12-28 | ASML Netherlands B.V. | Imaging system |
| KR20250168615A (ko) * | 2023-12-26 | 2025-12-02 | 하쿠토 가부시키가이샤 | 투영 노광 장치 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4888614A (en) * | 1986-05-30 | 1989-12-19 | Canon Kabushiki Kaisha | Observation system for a projection exposure apparatus |
| JP3303436B2 (ja) | 1993-05-14 | 2002-07-22 | キヤノン株式会社 | 投影露光装置及び半導体素子の製造方法 |
| JP3326902B2 (ja) * | 1993-09-10 | 2002-09-24 | 株式会社日立製作所 | パターン検出方法及びパターン検出装置及びそれを用いた投影露光装置 |
| JPH08264427A (ja) * | 1995-03-23 | 1996-10-11 | Nikon Corp | アライメント方法及びその装置 |
| JP3796369B2 (ja) * | 1999-03-24 | 2006-07-12 | キヤノン株式会社 | 干渉計を搭載した投影露光装置 |
| JP3796368B2 (ja) | 1999-03-24 | 2006-07-12 | キヤノン株式会社 | 投影露光装置 |
| JP2001332490A (ja) | 2000-03-14 | 2001-11-30 | Nikon Corp | 位置合わせ方法、露光方法、露光装置、及びデバイス製造方法 |
| JP4803901B2 (ja) * | 2001-05-22 | 2011-10-26 | キヤノン株式会社 | 位置合わせ方法、露光装置、および半導体デバイス製造方法 |
| JP2002353099A (ja) | 2001-05-22 | 2002-12-06 | Canon Inc | 位置検出方法及び装置及び露光装置及びデバイス製造方法 |
| JP2003197510A (ja) * | 2001-12-27 | 2003-07-11 | Nikon Corp | 収差測定装置、収差測定方法、光学系、および、露光装置 |
| JP2004128149A (ja) * | 2002-10-01 | 2004-04-22 | Nikon Corp | 収差計測方法、露光方法及び露光装置 |
| JP2004214552A (ja) * | 2003-01-08 | 2004-07-29 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
| JP4023347B2 (ja) * | 2003-02-06 | 2007-12-19 | ソニー株式会社 | マスク処理装置、マスク処理方法、プログラム、およびマスク |
| JP4362862B2 (ja) * | 2003-04-01 | 2009-11-11 | 株式会社ニコン | ステージ装置及び露光装置 |
| JP4478424B2 (ja) * | 2003-09-29 | 2010-06-09 | キヤノン株式会社 | 微細加工装置およびデバイスの製造方法 |
| EP1681709A4 (en) * | 2003-10-16 | 2008-09-17 | Nikon Corp | DEVICE AND METHOD FOR MEASURING OPTICAL CHARACTERISTICS, EXPOSURE SYSTEM AND EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD |
| JP4630611B2 (ja) * | 2004-09-01 | 2011-02-09 | キヤノン株式会社 | 干渉計を備えた露光装置及び方法、並びに、デバイス製造方法 |
| JP4769448B2 (ja) * | 2004-10-08 | 2011-09-07 | キヤノン株式会社 | 干渉計を備えた露光装置及びデバイス製造方法 |
| JP2006196555A (ja) * | 2005-01-11 | 2006-07-27 | Nikon Corp | 収差計測方法及び装置、並びに露光方法及び装置 |
| JP2006313866A (ja) * | 2005-05-09 | 2006-11-16 | Canon Inc | 露光装置及び方法 |
| JP2007281003A (ja) * | 2006-04-03 | 2007-10-25 | Canon Inc | 測定方法及び装置、並びに、露光装置 |
-
2008
- 2008-01-31 JP JP2008021648A patent/JP5219534B2/ja not_active Expired - Fee Related
-
2009
- 2009-01-20 TW TW098102049A patent/TW200947159A/zh unknown
- 2009-01-23 US US12/358,599 patent/US8665416B2/en not_active Expired - Fee Related
- 2009-01-30 KR KR1020090007551A patent/KR20090084754A/ko not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009182253A (ja) | 2009-08-13 |
| US20090195764A1 (en) | 2009-08-06 |
| KR20090084754A (ko) | 2009-08-05 |
| US8665416B2 (en) | 2014-03-04 |
| JP5219534B2 (ja) | 2013-06-26 |
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