JP5214111B2 - 薄膜トランジスタ、薄膜トランジスタ表示板及びその製造方法 - Google Patents

薄膜トランジスタ、薄膜トランジスタ表示板及びその製造方法 Download PDF

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JP5214111B2
JP5214111B2 JP2006069788A JP2006069788A JP5214111B2 JP 5214111 B2 JP5214111 B2 JP 5214111B2 JP 2006069788 A JP2006069788 A JP 2006069788A JP 2006069788 A JP2006069788 A JP 2006069788A JP 5214111 B2 JP5214111 B2 JP 5214111B2
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semiconductor
silicon
electrode
thin film
film
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JP2006261672A5 (enExample
JP2006261672A (ja
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▼唆▲ 厚 崔
凡 洛 崔
俊 哲 高
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2006069788A 2005-03-14 2006-03-14 薄膜トランジスタ、薄膜トランジスタ表示板及びその製造方法 Expired - Fee Related JP5214111B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050021014A KR101133764B1 (ko) 2005-03-14 2005-03-14 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
KR10-2005-0021014 2005-03-14

Publications (3)

Publication Number Publication Date
JP2006261672A JP2006261672A (ja) 2006-09-28
JP2006261672A5 JP2006261672A5 (enExample) 2009-04-23
JP5214111B2 true JP5214111B2 (ja) 2013-06-19

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ID=36969890

Family Applications (1)

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JP2006069788A Expired - Fee Related JP5214111B2 (ja) 2005-03-14 2006-03-14 薄膜トランジスタ、薄膜トランジスタ表示板及びその製造方法

Country Status (5)

Country Link
US (1) US7935578B2 (enExample)
JP (1) JP5214111B2 (enExample)
KR (1) KR101133764B1 (enExample)
CN (1) CN1841779B (enExample)
TW (1) TWI394281B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101240651B1 (ko) * 2006-04-12 2013-03-08 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP5413549B2 (ja) * 2006-11-28 2014-02-12 カシオ計算機株式会社 薄膜トランジスタパネルおよびその製造方法
US20080157081A1 (en) * 2006-12-28 2008-07-03 Samsung Electronics Co., Ltd. Organic light emitting device and method for manufacturing the same
KR101293566B1 (ko) * 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101406889B1 (ko) * 2007-12-24 2014-06-13 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조 방법
JP5308760B2 (ja) * 2008-09-30 2013-10-09 株式会社日立製作所 表示装置
DE102009007947B4 (de) * 2009-02-06 2014-08-14 Universität Stuttgart Verfahren zur Herstellung eines Aktiv-Matrix-OLED-Displays
CN107863355B (zh) * 2017-10-26 2022-01-25 上海中航光电子有限公司 一种显示基板、显示装置和显示基板的制造方法
CN109411531B (zh) * 2018-10-18 2022-04-19 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置

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KR960002202B1 (ko) * 1991-02-04 1996-02-13 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 액정 전기 광학 장치 제작 방법
JPH0562917A (ja) * 1991-09-04 1993-03-12 Canon Inc アモルフアスシリコン薄膜の製造法
JP3705733B2 (ja) * 1992-04-30 2005-10-12 株式会社東芝 半導体装置の製造方法
JP3281431B2 (ja) * 1992-12-14 2002-05-13 株式会社日立製作所 薄膜トランジスタ
JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
KR100218500B1 (ko) 1995-05-17 1999-09-01 윤종용 실리콘막 및 그 제조 방법과 이를 포함하는 박막트랜지스터 및 그 제조방법
JPH09139504A (ja) * 1995-11-14 1997-05-27 Sharp Corp コプラナ型薄膜トランジスタおよびその製造方法と、それを用いた液晶表示装置
US6391690B2 (en) * 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
KR100234892B1 (ko) * 1996-08-26 1999-12-15 구본준 액정표시장치의 구조 및 그 제조방법
KR100697903B1 (ko) * 1997-04-11 2007-03-20 가부시키가이샤 히타치세이사쿠쇼 액정표시장치
JP4300435B2 (ja) 1998-08-18 2009-07-22 ソニー株式会社 電気光学装置の製造方法、及び電気光学装置用の駆動基板の製造方法
US6096626A (en) * 1998-09-03 2000-08-01 Micron Technology, Inc. Semiconductor structures and semiconductor processing methods of forming silicon layers
JP2000111952A (ja) 1998-10-07 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000124456A (ja) * 1998-10-12 2000-04-28 Shoka Kagi Kofun Yugenkoshi 高エネルギーギャップオフセット層構造を有するｔｆｔ素子
JP2000214484A (ja) 1999-01-27 2000-08-04 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
KR100317622B1 (ko) 1999-03-24 2001-12-22 구본준, 론 위라하디락사 박막트랜지스터 및 그의 제조방법
JP2001077372A (ja) * 1999-09-08 2001-03-23 Canon Inc 薄膜トランジスタ
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JP3659103B2 (ja) * 1999-12-28 2005-06-15 セイコーエプソン株式会社 電気光学装置、電気光学装置の駆動回路および駆動方法、電子機器
TW515103B (en) * 2000-07-24 2002-12-21 Matsushita Electric Industrial Co Ltd Semiconductor device, liquid crystal display device, EL display device, and manufacturing methods of semiconductor thin film and semiconductor device
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JP2002294451A (ja) 2001-03-30 2002-10-09 Sony Corp 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置
JP4644964B2 (ja) 2001-04-04 2011-03-09 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
US6737302B2 (en) * 2001-10-31 2004-05-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for field-effect transistor
JP2003309268A (ja) 2002-02-15 2003-10-31 Konica Minolta Holdings Inc 有機トランジスタ素子及びその製造方法
JP4182673B2 (ja) 2002-04-10 2008-11-19 セイコーエプソン株式会社 電気光学装置用基板の製造方法、及び電気光学装置の製造方法
KR100579182B1 (ko) 2002-10-30 2006-05-11 삼성에스디아이 주식회사 유기 전계 발광 표시 장치의 제조 방법

Also Published As

Publication number Publication date
CN1841779A (zh) 2006-10-04
US7935578B2 (en) 2011-05-03
CN1841779B (zh) 2012-01-04
TW200642088A (en) 2006-12-01
KR20060099658A (ko) 2006-09-20
TWI394281B (zh) 2013-04-21
US20060202204A1 (en) 2006-09-14
KR101133764B1 (ko) 2012-04-09
JP2006261672A (ja) 2006-09-28

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