CN1841779B - 薄膜晶体管、薄膜晶体管阵列面板及其制造方法 - Google Patents

薄膜晶体管、薄膜晶体管阵列面板及其制造方法 Download PDF

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Publication number
CN1841779B
CN1841779B CN2006100591238A CN200610059123A CN1841779B CN 1841779 B CN1841779 B CN 1841779B CN 2006100591238 A CN2006100591238 A CN 2006100591238A CN 200610059123 A CN200610059123 A CN 200610059123A CN 1841779 B CN1841779 B CN 1841779B
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CN
China
Prior art keywords
semiconductor
electrode
thin film
film transistor
silicon
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Expired - Fee Related
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CN2006100591238A
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English (en)
Chinese (zh)
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CN1841779A (zh
Inventor
崔埈厚
高俊哲
崔凡洛
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1841779A publication Critical patent/CN1841779A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN2006100591238A 2005-03-14 2006-03-14 薄膜晶体管、薄膜晶体管阵列面板及其制造方法 Expired - Fee Related CN1841779B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050021014A KR101133764B1 (ko) 2005-03-14 2005-03-14 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
KR21014/05 2005-03-14

Publications (2)

Publication Number Publication Date
CN1841779A CN1841779A (zh) 2006-10-04
CN1841779B true CN1841779B (zh) 2012-01-04

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CN2006100591238A Expired - Fee Related CN1841779B (zh) 2005-03-14 2006-03-14 薄膜晶体管、薄膜晶体管阵列面板及其制造方法

Country Status (5)

Country Link
US (1) US7935578B2 (enExample)
JP (1) JP5214111B2 (enExample)
KR (1) KR101133764B1 (enExample)
CN (1) CN1841779B (enExample)
TW (1) TWI394281B (enExample)

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KR101240651B1 (ko) * 2006-04-12 2013-03-08 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP5413549B2 (ja) * 2006-11-28 2014-02-12 カシオ計算機株式会社 薄膜トランジスタパネルおよびその製造方法
US20080157081A1 (en) * 2006-12-28 2008-07-03 Samsung Electronics Co., Ltd. Organic light emitting device and method for manufacturing the same
KR101293566B1 (ko) * 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101406889B1 (ko) * 2007-12-24 2014-06-13 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조 방법
JP5308760B2 (ja) * 2008-09-30 2013-10-09 株式会社日立製作所 表示装置
DE102009007947B4 (de) * 2009-02-06 2014-08-14 Universität Stuttgart Verfahren zur Herstellung eines Aktiv-Matrix-OLED-Displays
CN107863355B (zh) * 2017-10-26 2022-01-25 上海中航光电子有限公司 一种显示基板、显示装置和显示基板的制造方法
CN109411531B (zh) * 2018-10-18 2022-04-19 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置

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JPH0562917A (ja) * 1991-09-04 1993-03-12 Canon Inc アモルフアスシリコン薄膜の製造法
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JPH07268622A (ja) * 1994-03-01 1995-10-17 Applied Sci & Technol Inc マイクロ波プラズマ付着源
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JPH09139504A (ja) * 1995-11-14 1997-05-27 Sharp Corp コプラナ型薄膜トランジスタおよびその製造方法と、それを用いた液晶表示装置
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JP4300435B2 (ja) 1998-08-18 2009-07-22 ソニー株式会社 電気光学装置の製造方法、及び電気光学装置用の駆動基板の製造方法
US6096626A (en) * 1998-09-03 2000-08-01 Micron Technology, Inc. Semiconductor structures and semiconductor processing methods of forming silicon layers
JP2000111952A (ja) 1998-10-07 2000-04-21 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
JP2000124456A (ja) * 1998-10-12 2000-04-28 Shoka Kagi Kofun Yugenkoshi 高エネルギーギャップオフセット層構造を有するｔｆｔ素子
JP2000214484A (ja) 1999-01-27 2000-08-04 Sony Corp 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法
KR100317622B1 (ko) 1999-03-24 2001-12-22 구본준, 론 위라하디락사 박막트랜지스터 및 그의 제조방법
JP2001077372A (ja) * 1999-09-08 2001-03-23 Canon Inc 薄膜トランジスタ
KR100577410B1 (ko) * 1999-11-30 2006-05-08 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
JP3659103B2 (ja) * 1999-12-28 2005-06-15 セイコーエプソン株式会社 電気光学装置、電気光学装置の駆動回路および駆動方法、電子機器
TW515103B (en) * 2000-07-24 2002-12-21 Matsushita Electric Industrial Co Ltd Semiconductor device, liquid crystal display device, EL display device, and manufacturing methods of semiconductor thin film and semiconductor device
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JP2002294451A (ja) 2001-03-30 2002-10-09 Sony Corp 多結晶性半導体薄膜の形成方法、半導体装置の製造方法、並びにこれらの方法の実施に使用する装置
JP4644964B2 (ja) 2001-04-04 2011-03-09 ソニー株式会社 多結晶性半導体薄膜の形成方法、及び半導体装置の製造方法
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JP2003309268A (ja) 2002-02-15 2003-10-31 Konica Minolta Holdings Inc 有機トランジスタ素子及びその製造方法
JP4182673B2 (ja) 2002-04-10 2008-11-19 セイコーエプソン株式会社 電気光学装置用基板の製造方法、及び電気光学装置の製造方法
KR100579182B1 (ko) 2002-10-30 2006-05-11 삼성에스디아이 주식회사 유기 전계 발광 표시 장치의 제조 방법

Also Published As

Publication number Publication date
CN1841779A (zh) 2006-10-04
US7935578B2 (en) 2011-05-03
TW200642088A (en) 2006-12-01
KR20060099658A (ko) 2006-09-20
TWI394281B (zh) 2013-04-21
JP5214111B2 (ja) 2013-06-19
US20060202204A1 (en) 2006-09-14
KR101133764B1 (ko) 2012-04-09
JP2006261672A (ja) 2006-09-28

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Owner name: SAMSUNG DISPLAY CO., LTD.

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Effective date: 20121105

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